1. A semiconductor device comprising:
a tray configured to have an accommodating part with a concave shape such that the accommodating part opens in an upward direction relative to the tray;
a circuit part configured to be housed in the accommodating part and have a semiconductor element and wiring members; and
a sealing resin configured to be injected in the accommodating part and seal, in potting, the circuit part housed in the accommodating part and side wall top parts of the tray,
the wiring members being partially exposed out of a top surface of the sealing resin, the top surface facing in the upward direction, to form external electrodes, and
the sealing resin having a heat resistant temperature which is higher than the melting point of a solder for bonding the tray to a cooling device.
2. The semiconductor device according to claim 1, wherein
a side wall of the tray, close to a power electrode adapted to treat a higher voltage and a larger electric current out of the external electrodes, has a smaller height than those of the other side walls of the tray.
3. The semiconductor device according to claim 1, wherein
the tray has high side walls and low side walls forming the accommodating part,
the high side walls are configured to have a length in which plural sets of the circuit parts are housed in the tray in a row along a first direction of the tray, and
the low side walls are configured to be placed at a plurality of positions in the first direction in such a way as to oppose each other and be adapted to form cutting portions for dividing the respective circuit parts which have been potting-sealed, into individual parts.
4. The semiconductor device according to claim 1, further comprising:
a lead frame configured to be mountable to the tray and be formed integrally with the wiring members including the external electrodes,
wherein the sealing resin is injected into the accommodating part in a state where the lead frame is mounted to the tray.
5. The semiconductor device according to claim 1, wherein the tray further has a tubular-shaped protrusion in a bottom surface of the accommodating part.
6. The semiconductor device according to claim 1, further comprising
an electrode supporting member configured to be mounted to a side wall top part of the tray and be adapted to support the external electrodes.
7. The semiconductor device according to claim 1, wherein
the tray has a base plate made of a metal, an insulation sheet placed on the base plate and provided with a metal substrate, and a claw member made of a metal configured to fix the placed insulation sheet to the base plate, and the base plate is shaped in a concave shape.
8. The semiconductor device according to claim 1, wherein
the tray has a side wall configured to be folded after the sealing resin is injected into the accommodating part.
9. The semiconductor device according to claim 1, wherein
the tray further has a fixing portion configured to be formed in an upper portion of the tray and be adapted to fix the circuit part housed in the accommodating part.
10. A semiconductor device comprising:
a tray configured to have an accommodating part with a concave shape such that the accommodating part opens in an upward direction relative to the tray;
a circuit part configured to be housed in the accommodating part and have a semiconductor element and wiring members; and
a sealing resin configured to be injected in the accommodating part and seal, in potting, the circuit part housed in the accommodating part and side wall top parts of the tray; and
a cooling device mounted to the tray,
the wiring members being partially exposed out of a top surface of the sealing resin, the top surface facing in the upward direction, to form external electrodes, and
the tray having a protrusion on a cooling-device surface faced to the cooling device.
11. The semiconductor device according to claim 10, wherein
the cooling device has a concave-and-convex portion to engage with the protrusion in the tray, and the cooling device is mounted to the tray by engaging the protrusion with the concave-and-convex portion.
12. The semiconductor device according to claim 10, wherein
the cooling device has a jacket shape configured to have a bottom surface forming a refrigerant path between the cooling device and the cooling-device surface of the tray.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1-40. (canceled)
41. A ceramic ballistic armor, comprising a layer of ballistic ceramic particles dispersed with a continuous phase of silicon carbide,
wherein said ballistic ceramic particles are substantially coated in silicon hexaboride.
42. The ceramic ballistic armor of claim 41, said ballistic ceramic particles being composed of boron carbide.
43. The ceramic ballistic armor of claim 42, said ballistic ceramic particles generally exhibiting a crystal lattice framework comprising constituent molecules with the chemical formula B12(B,C,Si)3.
44. (canceled)
45. The ceramic ballistic armor of claim 41, wherein said continuous phase further comprises silicon.
46. The ceramic ballistic armor of claim 41, wherein said ballistic ceramic particles collectively have a median diameter of approximately 10 microns or less.