1. A device comprising:
a first semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region;
a second semiconductor structure; and
a bond formed at an interface disposed between the first and second semiconductor structures;
wherein:
the bond connects the first semiconductor structure to the second semiconductor structure; and
a semiconductor layer adjacent to the interface is doped to a concentration of at least 2\xd71018 cm\u22123.
2. The device of claim 1 wherein a semiconductor layer adjacent to the interface is doped to a concentration of at least 5\xd71018 cm\u22123 and has a thickness greater than 3000 \u212b.
3. The device of claim 1 wherein a semiconductor layer adjacent to the interface is an InGaP layer between 5,000 and 10,000 \u212b thick and doped with Te to a concentration of at least 5\xd71018 cm\u22123.
4. The device of claim 3 wherein:
the semiconductor layer adjacent to the interface is a first semiconductor layer adjacent to the interface; and
a second semiconductor layer adjacent to the interface is an InGaP layer less than 250 \u212b thick and doped with Te.
5. The device of claim 1 wherein a semiconductor layer adjacent to the interface has a peak-to-valley roughness greater than 15 nm.
6. The device of claim 1 wherein a semiconductor layer adjacent to the interface has a bulk lattice constant different from a bulk lattice constant of GaAs.
7. The device of claim 6 wherein the semiconductor layer adjacent to the interface with the bulk lattice constant different from a bulk lattice constant of GaAs is one of InGaP and AlGaInP.
8. The device of claim 1 wherein the semiconductor layer adjacent to the interface has a graded composition.
9. The device of claim 1 wherein a band gap of a semiconductor layer adjacent to the interface is greater than a band gap of the light emitting layer.
10. The device of claim 1 wherein a band gap of a semiconductor layer adjacent to the interface is greater than a band gap of the light emitting layer plus 0.025 eV.
11. The device of claim 1 wherein the second semiconductor structure comprises a transparent GaP layer at least 10 \u03bcm thick.
12. The device of claim 1 wherein a semiconductor layer adjacent to the interface is more heavily doped than at least one of the p-type region and the n-type region.
13. The device of claim 1 wherein:
the semiconductor layer adjacent to the interface is a first semiconductor layer adjacent to the interface; and
the first semiconductor layer adjacent to the interface is AlGaInP with a thickness less than 500 \u212b and doped with Te to a concentration greater than 2\xd71018 cm\u22123;
a second semiconductor layer adjacent to the interface is InGaP with an InP composition between 8% and 16%, with a thickness between 2,000 and 20,000 \u212b, and doped with Te to a concentration of 8\xd71018 cm\u22123.
14. A method comprising:
growing a first semiconductor structure on a GaAs substrate, the first semiconductor structure comprising:
an etch stop layer with a thickness less than 150 \u212b; and
an AlGaInP light emitting layer disposed between an n-type region and p-type region;
removing the GaAs substrate; and
bonding the first semiconductor structure to a second semiconductor structure.
15. The method of claim 14 wherein the etch stop layer is InGaP or AlGaInP with an InP composition between 45 and 50%.
16. The method of claim 14 wherein the etch stop layer and the GaAs substrate have the same bulk lattice constant.
17. The method of claim 14 wherein the etch stop layer and the GaAs substrate have different bulk lattice constants.
18. The method of claim 14 wherein:
the second semiconductor structure comprises a bonding layer; and
the first semiconductor structure and the second semiconductor structure are bonded by a bond disposed between the etch stop layer and the bonding layer.
19. The method of claim 18 wherein the bonding layer has a thickness of at least 5000 \u212b.
20. The method of claim 18 wherein the bonding layer is doped to a concentration of at least 5\xd71018 cm\u22123.
21. The method of claim 14 wherein:
the etch stop layer is a second etch stop layer;
the first semiconductor structure further comprises a first etch stop layer.
22. The method of claim 21 wherein the first and second etch stop layers have different compositions.
23. The method of claim 21 wherein the first etch stop layer is AlGaAs and the second etch stop layer is one of InGaP and AlInGaP.
24. A method comprising:
growing a first semiconductor structure on a GaAs substrate, the first semiconductor structure comprising:
an etch stop layer with a bulk lattice constant different from a lattice constant of GaAs; and
an AlGaInP light emitting layer disposed between an n-type region and p-type region;
removing the GaAs substrate; and
bonding the first semiconductor structure to a second semiconductor structure.
25. The method of claim 24 wherein:
the first semiconductor structure is bonded to the second semiconductor structure by a bond disposed at an interface between the etch stop layer and a bonding layer;
the etch stop layer is AlGaInP with a thickness less than 500 \u212b and doped with Te to a concentration greater than 5\xd71017 cm\u22123; and
the bonding layer is InGaP with an InP composition between 8% and 16%, with a thickness between 800 and 20,000 \u212b, and doped with Te to a concentration greater than 1\xd71018 cm\u22123.
26. The method of claim 24 further comprising forming the second semiconductor structure, wherein forming the second semiconductor structure comprises:
providing a transparent substrate; and
growing a bonding layer over the transparent substrate; wherein
the bonding layer has a bulk lattice constant different from a bulk lattice constant of the transparent substrate; and
the bonding layer is grown to a thickness greater than a critical thickness for strain relaxation for the bonding layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A detection device for an intermolecular interaction, comprising:
a detector having a ligand;
a white light source emitting white light;
a spectrometer to detect a spectral intensity of received light;
a light transmission unit including a first optical transmission path for transmitting the white light from the white light source to the detector, a second optical transmission path for transmitting reflected light of the white light from the detector to the spectrometer and a third optical transmission path for transmitting the white light from the white light source to the spectrometer;
a switching unit switching between a reflected light receiving state which allows the reflected light of the white light at the detector to be transmitted to the spectrometer via the second optical transmission paths and a white light receiving state which allows the white light from the white light source to be transmitted to the spectrometer via the third optical transmission path; and
a controller controlling the switching unit and the spectrometer to detect the spectral intensities in the white light receiving state and in the reflected light receiving state.
2. The detection device for an intermolecular interaction according to claim 1, further comprising a calculation unit to estimate a reflection spectrum through calculation of a reflectance for every predetermined wavelength range on a basis of the spectral intensities of the white light and the reflected light obtained by the control of the controller.
3. The detection device for an intermolecular interaction according to claim 1, wherein the switching unit is a shutter mechanism selectively switchable between an optically shielded state of a light transmission via the first optical transmission path and an optically shielded state of a light transmission via the third optical transmission path with a shielding member, the position of the shielding member being movable.
4. The detection device for an intermolecular interaction according to claim 1, wherein the switching unit is a liquid crystal filter selectively switchable between an optically shielded state of a light transmission via the first optical transmission path and an optically shielded state of a light transmission via the third optical transmission path.
5. A detection method for detecting an intermolecular interaction using a detection device comprising a detector having a ligand, a white light source emitting white light, a spectrometer detecting spectral intensity of received light, a light transmission unit including a first optical transmission path for transmitting the white light from the white light source to the detector, a second optical transmission path for transmitting reflected light of the white light from the detector to the spectrometer and a third optical transmission path for transmitting the white light from the white light source to the spectrometer, the method comprising:
a first detection step of receiving the reflected light of the white light from the detector via the first and the second optical transmission paths and detecting the spectral intensity of the reflected light by the spectrometer;
a second detection step of receiving the white light from the white light source via the third optical transmission path either before or after the first detection step and detecting the spectral intensity of the white light by the spectrometer; and
a calculation step of estimating a reflection spectrum by calculating a reflectance for every predetermined wavelength range on a basis of the spectral intensities of the white light and the reflected light obtained in the first detection step and the second detection step.