1. A semiconductor component (1) having a photosensitive semiconductor layer (2), wherein the photosensitive semiconductor layer (2) has a doping with a first doping density (D1) of a first conductivity type which causes effective conversion of electromagnetic radiation penetrating into the semiconductor layer (2) into electrical charge carriers,
at least two mutually spaced modulation gates (4A, 4B) which are each formed by a trench gate extending from a surface (3) of the semiconductor layer (2) and perpendicularly to said surface (3) into the semiconductor layer (2), and
at least two read-out diodes (5A, 5B) arranged at a spacing relative to each other and near the surface (3) between the two modulation gates (4A, 4B),
characterised in that introduced into the semiconductor layer (2) between the two read-out diodes (5A, 5B) is a separating implant (6) which is of the same conductivity type as the semiconductor layer (2) but with a second higher doping density (D2).
2. A semiconductor component (1) as set forth in claim 1 characterised in that the semiconductor layer (2) is arranged on a semiconductor substrate (7) which is of the same conductivity type but having a doping with a third doping density (D3) which is higher than the first (D1) and second (D2) doping densities.
3. A semiconductor component (1) as set forth in claim 2 characterised in that the doping densities (D1, D2 and D3) respectively differ by at least one order of magnitude.
4. A semiconductor component (1) as set forth in claim 3 characterised in that the semiconductor substrate (7) has a contacting means (8), wherein the semiconductor substrate (7) can be held at a first potential (\u03c6S) by means of the contacting means (8).
5. A semiconductor component (1) as set forth in claim 1 characterised in that the trench gates (4A, 4B) respectively comprise a channel (9A, 9B) extending from the surface (3) of the semiconductor layer (2) and perpendicularly to said surface (3) into the semiconductor layer (2), wherein the channel walls (10A, 10B) are lined with an electrically insulating layer (11A, 11B) and an electrically conducting material (12A, 12B) is arranged in the channel (9A, 9B).
6. A semiconductor component (1) as set forth in claim 1 characterised in that the aspect ratio of the trench gates (4A, 4B) of depth (T) to breadth (B) is at least 5:1.
7. A semiconductor component (1) as set forth in claim 1 characterised in that the read-out diodes (5A, 5B) are pn-diodes, wherein the pn-diodes each have a highly doped semiconductor implant (13A) which is introduced into the semiconductor layer (2) and which is of a fourth doping density (D4) of a second conductivity type.
8. A semiconductor component (1) as set forth in claim 1 characterised in that a respective separation gate (14A, 14B) is arranged between a modulation gate (4A, 4B) and an adjacent read-out diode (5A, 5B).
9. A semiconductor component (1) as set forth in claim 8 characterised in that the separation gates (14A, 14B) are electrically insulated from the photosensitive semiconductor layer (2), the modulation gates (4A, 4B) and the read-out diodes (5A, 5B).
10. A method of operating a semiconductor component (1) as set forth in claim 1 characterised in that the semiconductor substrate (7) is held at a first potential (\u03c6S) while the difference between the potentials (\u03c6ModA, \u03c6ModB) of the modulation gates (4A, 4B) varies in accordance with a modulation frequency by the potential (\u03c6S) of the semiconductor substrate (7).
11. A method as set forth in claim 10 characterised in that an equal constant read-out voltage (VA) is respectively applied at the read-out diodes (5A, 5B) and the modulation voltage (VMod) at the modulation gates (4A, 4B) varies in push-pull manner.
12. A method as set forth in claim 11 characterised in that the circuitry of the read-out diodes (5A, 5B) permits direct read-out of the photocurrents generated in the semiconductor layer (2).
13. A pixel for distance measurement characterised in that it has a photosensitive pixel surface having at least one semiconductor component (1) as set forth in claim 1.
14. A sensor for three-dimensional image capture characterised in that it has a plurality of mutually juxtaposed pixels as set forth in claim 13 and an imaging optical system for the projection of incident electromagnetic radiation on to a sensor surface formed by the photosensitive pixel surfaces.
15. A method as set forth in claim 10 characterised in that the circuitry of the read-out diodes (5A, 5B) permits direct read-out of the photocurrents generated in the semiconductor layer (2).
16. A semiconductor component (1) as set forth in claim 2 characterised in that the semiconductor substrate (7) has a contacting means (8), wherein the semiconductor substrate (7) can be held at a first potential (\u03c6S) by means of the contacting means (8).
17. A semiconductor component (1) as set forth in claim 1 characterised in that the aspect ratio of the trench gates (4A, 4B) of depth (T) to breadth (B) is at least 10:1.
18. A semiconductor component (1) as set forth in claim 1 characterised in that the aspect ratio of the trench gates (4A, 4B) of depth (T) to breadth (B) is at most 100:1.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A composition comprising between 24% and 45% yeast (based on yeast dry matter content) wherein the composition contains more than 0.75% salt, wherein the amount of salt in the composition is adjusted relative to the yeast dry matter content so that the composition is liquid, and wherein the composition is biologically stable in the absence of added sugar when maintained at a temperature below 10\xb0 C.
2. The composition of claim 1 further comprising one or more processing aids.
3. The composition of claim 2 wherein the processing aids are chemical additives andor enzymes.
4. The composition of claim 3 wherein the chemical additives are selected from the group consisting of oxidizing agents, reducing agents, emulsifiers, bile salts, and the enzymes are selected from the group consisting of starch degrading enzymes, arabinoxylan degrading enzymes, hemicellulose degrading enzymes, cellulose degrading enzymes, oxidizing enzymes, fatty material splitting enzymes and protein degrading enzymes.
5. The composition of claim 1 further comprising one or more gums.
6. A process for the production of a composition as defined in claim 1 comprising:
a) preparing a yeast suspension with a yeast dry matter content between 3% and 23%;
b) concentrating the yeast suspension of step a) to a yeast composition with a yeast dry matter content higher than 23%;
c) adding solid salt or a salt solution during or after step a) or step b); and
d) cooling the yeast suspension or composition before, during or after step c) to a temperature below 10\xb0 C.
7. The process of claim 6 which further includes adding one or more processing aids during or after any of steps a), b) or c).
8. A process for the production of a composition as defined in claim 1 comprising:
a) performing membrane filtration of a yeast-containing fermentation broth or of cream yeast to obtain concentrated cells and salt-containing effluent;
b) concentrating the salt-containing effluent of step a) and
c) mixing said effluent with the concentrated cells of step a).
9. The process of claim 8 which further includes adding one or more processing aids during or after any of steps a), b), andor c).
10. The process of claim 8, which further includes adding salt or a salt solution to the yeast-containing fermentation broth during or after fermentation.
11. A process for producing dough which comprises adding to additional dough ingredients a liquid yeast composition as defined in claim 1.
12. A process for producing a baked product from a dough which method comprises baking a dough prepared by the process as defined in claim 11.
13. A process for storing a liquid yeast composition comprising between 24% and 45% yeast (based on yeast dry matter) and more than 0.75% salt which process comprises maintaining the liquid yeast composition at a temperature below 10\xb0 C.