1. A high-reliability nonvolatile memory storage system, comprising:
a memory hub that includes a memory system controller, a host interface and a plurality of memory unit interfaces, the memory controller receiving data from the host interface and sending a copy of the received data to each of two or more of the plurality of memory unit interfaces; and
a plurality of removable memory units, each of the plurality of removable memory units in communication with the memory system controller through a respective one of the plurality of memory unit interfaces, each of the plurality of removable memory units having a data scrambler that transforms data received from the memory hub prior to storing the transformed data in a nonvolatile memory array in the removable memory unit, each of the plurality of removable memory units performing a different transformation of received data prior to storage, the different transformations determined by memory unit identifiers associated with each of the plurality of removable memory units, each of the plurality of removable memory units having a different memory unit identifier.
2. The high-reliability nonvolatile memory storage system of claim 1 wherein each of the plurality of removable memory units has an associated memory unit identifier assigned by the memory system controller.
3. The high-reliability nonvolatile memory storage system of claim 1 wherein each of the plurality of removable memory units has an associated memory unit identifier permanently associated with the removable memory unit.
4. The high-reliability nonvolatile memory storage system of claim 1 wherein each of the plurality of removable memory units has an associated memory unit identifier selected by a physical switch in the respective removable memory unit.
5. The high-reliability nonvolatile memory storage system of claim 1 wherein each of the plurality of removable memory units is a memory card or a USB flash drive.
6. The high-reliability nonvolatile memory storage system of claim 5 wherein each of the plurality of removable memory units is a CompactFlash card, SmartMedia card, MultiMediaCard, Secure Digital card, MiniSD card, Memory Stick, Memory Stick Duo card, or MicroSDTransFlash card.
7. The high reliability nonvolatile memory storage system of claim 1 wherein each of the plurality of removable memory units is a Solid State Drive.
8. A method of storing data in a memory system that includes a plurality of removable nonvolatile memory units linked to a common hub, comprising:
transforming a portion of data according to a first transformation to obtain first transformed data;
storing the first transformed data in a first removable nonvolatile memory unit of the plurality of removable nonvolatile memory units;
transforming the portion of data according to a second transformation to obtain second transformed data; and
storing the second transformed data in a second removable nonvolatile memory unit of the plurality of removable nonvolatile memory units as a redundant copy.
9. The method of claim 8 further comprising:
assigning a first memory unit identifier to the first removable nonvolatile memory unit, the first memory unit identifier determining the first transformation; and
assigning a second memory unit identifier to the second removable nonvolatile memory unit, the second memory unit identifier determining the second transformation.
10. The method of claim 8 wherein the first transformation is performed according to a first memory unit identifier that is permanently stored in the first removable nonvolatile memory unit and the second transformation is performed according to a second memory unit identifier that is permanently stored in the second removable nonvolatile memory unit.
11. The method of claim 8 wherein the first transformation is performed according to a first memory unit identifier that is selected by a first physical switch in the first removable nonvolatile memory unit, and the second transformation is performed according to a second memory unit identifier that is selected by a second physical switch in the second removable nonvolatile memory unit.
12. A removable nonvolatile memory module for use in a memory system with redundant data storage, comprising:
an array of nonvolatile memory cells;
a physical interface for connecting the removable nonvolatile memory module to a host and for disconnecting the removable memory module from the host; and
a data scrambler that transforms data received from the host through the physical interface prior to storage of the scrambled data in the array of nonvolatile memory cells, wherein the data scrambler transforms the data according to a transformation that is selected from a plurality of transformations by a user.
13. The removable nonvolatile memory module of claim 12 wherein the transformation is selected by a switch that has at least a first position and a second position.
14. The removable nonvolatile memory module of claim 12 wherein each of the at least a first position and a second position correspond to a different transformation.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A mirror arrangement for reflecting electromagnetic radiation, comprising:
a mirror body with a mirror side disposed towards the radiation to be reflected,
wherein at least one extension sensor is provided at the mirror body for detecting a deformation state of the mirror body,
wherein the mirror body comprises a semiconductor layer at which the at least one extension sensor is provided.
2. The mirror arrangement according to claim 1, wherein the at least one extension sensor is incorporated into the semiconductor layer by doping regions of the semiconductor layer.
3. The mirror arrangement according to claim 1, wherein the at least one extension sensor is formed on the semiconductor layer by a lithographic process.
4. The mirror arrangement according to claim 1, wherein the semiconductor layer is a monocrystalline silicon layer.
5. The mirror arrangement according to claim 1, wherein a plurality of extension sensors is distributed spaced apart from one another in a surface area of the semiconductor layer.
6. The mirror arrangement according to claim 5, wherein the surface area in which the plurality of extension sensors is arranged is larger than 0.5 times the size of an optically effective area of the mirror.
7. The mirror arrangement according to claim 1, wherein the mirror body comprises a backing layer which is fixedly connected to the semiconductor layer over the entire surface thereof.
8. The mirror arrangement according to claim 7, wherein a material of the backing layer has a temperature-dependent length extension coefficient which is substantially equal to or less than a temperature-dependent length extension coefficient of a material of the semiconductor layer.
9. The mirror arrangement according to claim 7, wherein the backing layer is formed of glass.
10. The mirror arrangement according to claim 7, wherein the semiconductor layer is grown on the backing layer by a deposition process.
11. The mirror arrangement according to claim 1, further comprising a plurality of dielectric layers provided on the mirror side of the mirror body.
12. The mirror arrangement according to claim 1, further comprising a controller for detecting measuring signals of the at least one extension sensor and for outputting at least one deformation signal which is representative of the deformation state of the mirror body.
13. The mirror arrangement according to claim 12, further comprising at least one actuator for changing the deformation state of the mirror body, wherein the controller is configured to control the actuator in response to the deformation signal.
14. The mirror arrangement according to claim 5, wherein a first extension sensor of the plurality of extension sensors is configured to detect a change of extension oriented in a first direction and wherein a second extension sensor of the plurality of extension sensors is configured to detect a change of extension oriented in a second direction oriented transversally to the first direction.
15. A method for reflecting electromagnetic radiation comprising:
providing a mirror body with a mirror side disposed towards the radiation to be reflected, wherein at least one extension sensor is provided at the mirror body for detecting a deformation state of the mirror body, and wherein the mirror body comprises a semiconductor layer at which the at least one extension sensor is provided; and
detecting a deformation state of the mirror body based on a signal generated by the at least one extension sensor.
16. The method according to claim 15, wherein the at least one extension sensor is incorporated into the semiconductor layer by doping regions of the semiconductor layer.