1. A glass forming alloy having a composition given by:
(Ni1-x TMx)a ((Nb, Ta)1-y ETMy)b (Sn1-zAMz)c,
where ETM is an early transition metal selected from the group of Ti, Zr, Hf, Cr, Mo, and W; TM is a transition metal selected from the group of Mn, Fe, Co, and Cu; and AM is an additive material selected from the group of B, Al, Si, and Sb;
where a is in the range of from 50 to 65, b in the range of 30 to 45, c is in the range of 2 to 10 in atomic percentages; and
where x is less than 0.2, y is less than 0.3, z is less than 0.5, and the sum of x, y and z is less than about 0.5.
2. The glass forming alloy described in claim 1 wherein a is in the range of from 55 to 62, b in the range of 33 to 40, and c is in the range of 2 to 8 in atomic percentages; and
where x is less than 0.1, y is less than 0.2, z is less than 0.3, and the sum of x, y and z is less than about 0.3.
3. The glass forming alloy described in claim 2 wherein ETM is an early transition metal selected from the group of Ti, Zr, and Ta; TM is a transition metal selected from the group of Fe, Co and Cu; and AM is an additive material selected from the group of B and Si.
4. The glass forming alloy described in claim 1 wherein the alloy has a \u0394Tsc of more than 40\xb0 C.
5. The glass forming alloy described in claim 1 wherein the liquidus temperature of the alloy is 1160\xb0 C. or less.
6. The glass forming alloy described in claim 1 wherein the alloy has a Vickers hardness greater than 940 Kgmm2.
7. The glass forming alloy described in claim 1 wherein the alloy has a yield strength of greater than 2 GPa.
8. The glass forming alloy described in claim 1 wherein the alloy has a yield strength of about 3 GPa or more.
9. The glass forming alloy described in claim 1 wherein the alloy has a Young’s modulus of greater than 160 GPa.
10. The glass forming alloy described in claim 1 wherein the alloy has a ratio of glass transition temperature to liquidus temperature of around 0.6 or more.
11. The glass forming alloy described in claim 1 wherein the alloy is substantially amorphous.
12. The glass forming alloy described in claim 1 wherein the alloy contains a ductile crystalline phase precipitate.
13. The glass forming alloy described in claim 1 wherein the alloy is Ni60Nb37Sn3.
14. The glass forming alloy described in claim 1 wherein the alloy is Ni55Fe5Nb35Sn5.
15. The glass forming alloy described in claim 1 wherein the alloy is Ni60Nb35Sn3B2.
16. The glass forming alloy described in claim 1 wherein the alloy is Ni55Nb31Sn9Cu5.
17. The glass forming alloy described in claim 1 wherein the alloy is Ni55Nb28Sn6Zr3Co5Ti3.
18. An article made of an amorphous alloy of basic composition given by:
(Ni1-x TMx)a ((Nb, Ta)1-yETMy)b (Sn1-zAMz)c,
where ETM is an early transition metal selected from the group of Ti, Zr, Hf, Cr, Mo, and W; TM is a transition metal selected from the group of Mn, Fe, Co, and Cu; and AM is an additive material selected from the group of B, Al, Si, and Sb;
where a is in the range of from 50 to 65, b in the range of 30 to 45, c is in the range of 2 to 10 in atomic percentages;
where x is less than 0.2, y is less than 0.3, z is less than 0.5, and the sum of x, y and z is less than about 0.5.
19. The article described in claim 18 wherein a is in the range of from 55 to 62, b in the range of 33 to 40, and c is in the range of 2 to 8 in atomic percentages; and
where x is less than 0.1, y is less than 0.2, z is less than 0.3, and the sum of x, y and z is less than about 0.3.
20. The article described in claim 19 wherein ETM is an early transition metal selected from the group of Ti, Zr, and Ta; TM is a transition metal selected from the group of Fe, Co and Cu; and AM is an additive material selected from the group of B and Si.
21. The article described in claim 18 wherein the amorphous alloy has a \u0394Tsc of more than 40\xb0 C.
22. The article described in claim 18 wherein the liquidus temperature of the amorphous alloy is 1160\xb0 C. or less.
23. The article described in claim 18 wherein the amorphous alloy has a Vickers hardness greater than 940 Kgmm2.
24. The article described in claim 18 wherein the amorphous alloy has a yield strength of greater than 2 GPa.
25. The article described in claim 18 wherein the amorphous alloy has a yield strength of about 3 GPa or more.
26. The article described in claim 18 wherein the amorphous alloy has a Young’s modulus greater than 160 GPa.
27. The article described in claim 18 wherein the amorphous alloy has a ratio of glass transition temperature to liquidus temperature of around 0.6 or more.
28. The article described in claim 18 wherein the alloy contains a ductile crystalline phase precipitate.
29. The article described in claim 18 wherein the article is three dimensional having a size of least 0.5 mm in each dimension.
30. The article described in claim 18 wherein the article is three dimensional having a size of least 1.0 mm in each dimension.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A mask substrate comprising:
a transparent substrate including a reference mark for determining a position of a defect on the transparent substrate;
a light shielding film provided on the transparent substrate; and
an anti-reflective film provided on the light shielding film.
2. The mask substrate according to claim 1, wherein the reference mark includes a concave provided in a surface of the transparent substrate.
3. The mask substrate according to claim 2, wherein the concave is formed by irradiating the surface of the transparent substrate with an energy beam.
4. The mask substrate according to claim 2, wherein the concave is formed in a corner of the transparent substrate.
5. The mask substrate according to claim 2, wherein an edge of the concave includes a raised shape portion.
6. The mask substrate according to claim 1, wherein the reference mark includes a plurality of concaves formed in a surface of the transparent substrate, and the plurality of concaves are arranged in cross form.
7. The mask substrate according to claim 1, wherein the reference mark includes a part of the light shielding film.
8. The mask substrate according to claim 1, wherein the reference mark includes a concave feature formed in the light shielding film.
9. The mask substrate according to claim 8, wherein the concave is formed in a corner of the transparent substrate.
10. The mask substrate according to claim 1, wherein the transparent substrate further includes a plurality of reference marks.
11. The mask substrate according to claim 10, wherein each of the plurality of reference marks includes at least one concave.
12. The mask substrate according to claim 11, wherein the at least one concave is provided in a corner of the transparent substrate.
13. The mask substrate according to claim 1, wherein the transparent substrate comprises quartz or calcium fluoride.
14. The mask substrate according to claim 1, wherein the light shielding film includes an LSI pattern.
15. A method of manufacturing a mask substrate comprising:
irradiating a surface of a transparent substrate with an energy beam and forming a reference mark for determining a position of a defect on the transparent substrate, the reference mark including a concave feature in the surface of the transparent substrate;
forming a light shielding film on the surface of the transparent substrate; and
forming an anti-reflective film on the light shielding film.
16. The method of manufacturing a mask substrate according to claim 15, wherein the energy beam is a laser beam.
17. The method of manufacturing a mask substrate according to claim 15, further comprising polishing a surface including the concave after the concave have been formed in the surface of the transparent substrate and before the light shielding film is formed.
18. The method of manufacturing a mask substrate according to claim 15, further comprising processing the light shielding film to form an LSI pattern.
19. A method of manufacturing a mask substrate comprising:
forming a light shielding film on a transparent substrate;
forming an anti-reflective film on the light shielding film;
and processing the light shielding film to form a reference mark for determining a position of a defect on the transparent substrate.
20. The method of manufacturing a mask substrate according to claim 19, further comprising processing the light shielding film to form at least one reference mark.
21. The method of manufacturing a mask substrate according to claim 19, further comprising processing the light shielding film to form an LSI pattern.