1. A method of forming an oxidized dielectric material on a substrate, comprising:
forming a dielectric material on a substrate by a flowable CVD process;
curing the dielectric material disposed on the substrate;
performing a wet oxidation process on the dielectric material disposed on the substrate; and
forming an oxidized dielectric material on the substrate.
2. The method of claim 1, wherein forming the dielectric material on the substrate by a flowable CVD process further comprising:
supplying a gas mixture including at least a silicon containing precursor and a processing precursor into the flowable CVD processing chamber, wherein the silicon containing precursor is selected from a group consisting of silane, disilane, methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, tetraethoxysilane (TEOS), triethoxysilane (TES), octamethylcyclotetrasiloxane (OMCTS), tetramethyl-disiloxane (TMDSO), tetramethylcyclotetrasiloxane (TMCTS), tetramethyl-diethoxyl-disiloxane (TMDDSO), dimethyl-dimethoxyl-silane (DMDMS), trisillylamine (TSA), disillylamine (DSA), SixNyHzOzz-containing precursors, SixNyHzClzz-containing precursors, or combinations thereof.
3. The method of claim 2, wherein the processing precursor is selected from a group consisting of H2N2 mixture, N2, NH3, NH4OH, N2, N2H4 vapor, NO, N2O, NO2, H2, O3, O2, H2O2, water vapor, or combinations thereof.
4. The method of claim 2, wherein the silicon containing precursor is trisillylamine (TSA) and the processing precursor is NH3.
5. The method of claim 2, wherein the substrate temperature is controlled at less than 100 degrees Celsius.
6. The method of claim 1, wherein performing the wet oxidation process on the dielectric material further comprises:
wetting the substrate with a processing solution containing an oxygen source, wherein the oxygen source is selected from a group consisting of O3, O2, N2O, NO2, H2O vapor or steam, H2O2, NH4OHH2O2 solution, dilution of HClH2O2 solution, or combinations thereof.
7. The method of claim 6, wherein the oxygen source is O3.
8. The method of claim 6, wherein the processing solution is ozonated deionized (DI) water having an ozone concentration between about 1 milligram (mg) per liter (L) and about 1000 milligram (mg) per liter (L).
9. The method of claim 6, wherein the processing solution has a temperature controlled greater than 40 degrees Celsius but less than 100 degrees Celsius.
10. The method of claim 1, wherein performing the wet oxidation process on the dielectric material further comprises:
replacing silicon-nitrogen andor silicon-hydrogen bonds in the dielectric material with silicon-oxide bonds.
11. The method of claim 1, further comprising:
performing a thermal anneal process on the oxidized dielectric material disposed on the substrate.
12. The method of claim 11, wherein the thermal anneal process further comprises:
annealing the substrate to a temperature between about 100 degrees Celsius and about 1000 degrees Celsius.
13. The method of claim 1, wherein the oxidized dielectric material is a silicon oxide layer.
14. A method of forming an oxidized dielectric material on a substrate, comprising:
forming a silicon containing layer on a substrate by a flowable CVD process, wherein the silicon containing layer having a formula of SixNyHz;
curing the silicon containing layer disposed on the substrate;
immersing the silicon containing layer into a processing solution having an oxygen source, wherein the oxygen source in the processing solution at least partially replaces silicon nitrogen or silicon hydrogen bonds in the silicon containing layer with silicon oxygen bonds; and
forming an oxidized silicon containing layer on the substrate.
15. The method of claim 14, wherein forming the silicon containing layer on the substrate by the flowable CVD process further comprising:
forming the silicon-containing layer in the presence of a gas mixture including at least a silicon containing precursor and a processing precursor, wherein the silicon containing precursor is trisilylamine (TSA) and the processing precursor is NH3.
16. The method of claim 14, wherein the processing solution includes an oxygen source disposed in deionized (DI) water.
17. The method of claim 16, wherein the oxygen source is O3.
18. The method of claim 14 further comprising:
performing a thermal anneal process on the oxidized silicon containing layer to anneal the substrate to a temperature between about 100 degrees Celsius and about 1000 degrees Celsius.
19. A method of forming an oxidized dielectric material on a substrate, comprising:
forming a silicon containing layer on a substrate by a flowable CVD process, wherein the silicon containing layer is formed by exposure to a gas mixture containing trisilylamine (TSA) and NH3;
curing the silicon containing layer disposed on the substrate;
wetting the silicon containing layer with a processing solution having O3 disposed in deionized (DI) water, wherein the ozone disposed in the deionized (DI) water has a concentration between about 1 milligram (mg) per liter (L) and about 1 milligram (mg) per liter (L); and
forming an oxidized silicon containing layer on the substrate.
20. The method of claim 19, wherein the oxygen source provided from O3 in the processing solution at least partially coverts silicon nitrogen or silicon hydrogen bonding formed in the silicon containing layer into silicon oxygen bonding.
21. The method of claim 19, further comprising:
performing a thermal anneal process on the oxidized silicon containing layer to anneal the substrate to a temperature between about 100 degrees Celsius and about 1000 degrees Celsius.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A scanner, comprising:
a flat cable, comprising a first end and a second end, the second end moving to or away from the first end along a first path; and
a cable holder, disposed at a restricting point between the first end and the second end, whereby, when the second end moves to the first end, the cable holder contains and folds the flat cable.
2. The scanner as claimed in claim 1, wherein the flat cable has pleats.
3. The scanner as claimed in claim 2, wherein the flat cable pleats are triangular.
4. The scanner as claimed in claim 2, wherein the flat cable pleats follow a sine wave profile.
5. The scanner as claimed in claim 2, wherein the cable holder moves along a second path and contains the flat cable to keep a constant distance between the restricting point and the first path when the second end is moved along the first path.
6. The scanner as claimed in claim 5, wherein the first path is parallel to the second path.
7. The scanner as claimed in claim 1, wherein the cable holder is fixed on the restricting point.
8. The scanner as claimed in claim 1, further comprising:
a housing;
a shaft, disposed in the housing on the first path;
and
a scan module, movably disposed on the shaft and connected to the second end of the flat cable.
9. The scanner as claimed in claim 8, wherein the scan module is oriented lengthwise and comprises an end portion on the shaft.
10. The scanner as claimed in claim 9, wherein the cable holder comprises an opening through which the shaft passes, and the cable holder slides along the shaft with the opening.
11. The scanner as claimed in claim 1, wherein the cable holder comprises non-abrasive material.
12. The scanner as claimed in claim 1, wherein the cable holder comprises plastic.