1. A micro electro-mechanical system, comprising:
a substrate;
a first suspended electrode having a first surface and a second surface, the first surface being transverse to the second surface; and
a second suspended electrode including:
a first extension having a first surface facing the first surface of the first suspended electrode, the first extension being separated from the substrate by the first electrode; and
a second extension transverse to the first extension, the second extension having a second surface facing the second surface of the first suspended electrode, the second surface of the second extension separated from the first electrode by a first distance.
2. The system of claim 1 wherein the first and second surfaces of the first electrode form a first corner and the first and second surfaces of the second electrode form a second corner that corresponds to the first corner.
3. The system of claim 1 wherein the first surface of the first electrode and the first surface of the first extension are separated by a second distance that is greater than the first distance.
4. The system of claim 1, further comprising:
a third suspended electrode having a first surface and a second surface that is transverse to the first surface;
the second electrode having:
a third surface of the second extension that is opposite from the second surface of the second extension, the third surface of the second extension facing the second surface of the third electrode; and
a third extension transverse to the second extension and extending in a direction opposite from the first extension, the third extension having a first surface facing the first surface of the third electrode.
5. The system of claim 4 wherein the third suspended electrode is separated from the first suspended electrode by the second extension of the second electrode.
6. The system of claim 1 wherein the first and second electrodes include silicon germanium.
7. The system of claim 1 wherein the first distance is in the range of 10 and 100 nanometers.
8. A device, comprising:
a substrate;
a first electrode suspended over the substrate, the first electrode having a top surface and a side surface; and
a second electrode suspended over the substrate, the second electrode having a first and a second extension, the first extension being transverse to the second extension and extending over the top surface of the first electrode and the second extension being adjacent to the side surface of the first electrode, the first electrode being positioned between the first extension and the substrate.
9. The device of claim 8 wherein the top and side surface of the first electrode form a first corner and the first and second extensions of the second electrode form a second corner, the first corner configured to correspond with the second corner.
10. The device of claim 8, further comprising:
a third electrode suspended over the substrate, the third electrode separated from the first electrode by the second extension of the second electrode, the third electrode having a top and a side surface; and
a third extension extending transverse to the second extension of the third electrode and extending over the top surface of the third electrode.
11. The device of claim 10 wherein the first and third electrodes are separated from the second electrode by a first distance and a second distance, respectively.
12. The device of claim 11 wherein the first and second distance are in the range of 10 and 100 nanometers.
13. The device of claim 11 wherein the first and third electrodes are separated from the first and third extensions of the second electrode by a third distance and a fourth distance, respectively.
14. The device of claim 13 wherein the first and second distances are smaller than the third and fourth distances.
15. The device of claim 8 wherein the second extension of the second electrode is separated from the side surface of the first electrode by a first distance.
16. The device of claim 15 wherein the first distance is in the range of 10 and 100 nanometers.
17. The device of claim 15 wherein the second extension of the second electrode extends from the first extension towards the substrate and the second electrode includes a third extension extending from the first extension towards the substrate, the second and third extensions being separated by a second distance.
18. The device of claim 17 wherein the first and the second distance are equal.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for fabricating thin film transistors, comprising:
(a) providing a substrate and forming an amorphous silicon film on the substrate;
(b) selectively irradiating a portion of the amorphous silicon film located in the substrate with a laser beam for lateral growth of the amorphous silicon film after the step (a), to form a plurality of polysilicon regions;
(c) oxidizing a surface of the substrate after step (b); and
(d) irradiating whole area of the substrate with excimer laser annealing after step (c).
2. The method for fabricating thin film transistors according to claim 1, wherein a silicon nitride film is formed between the substrate and the amorphous silicon film.
3. The method for fabricating thin film transistors according to claim 2, further comprising: forming a silicon oxide film on the silicon nitride film.
4. The method for fabricating thin film transistors according to claim 1, wherein the portion of the amorphous silicon film is a circuit area of the thin film transistors.
5. The method for fabricating thin film transistors according to claim 1, wherein in the step (b), a method of the lateral growth comprises sequential lateral solidification, solid state laser, or thin beam directional crystallization.
6. The method for fabricating thin film transistors according to claim 1, wherein in the step (d), the excimer laser annealing for the whole area comprises a line beam excimer laser annealing.
7. The method for fabricating thin film transistors according to claim 1, wherein the step of oxidizing the surface of the substrate comprises:
(a) cleaning the substrate by using a dilute hydrogen fluoride solution and an ozonated water; and
(b) forming an oxidized layer on the amorphous silicon film by using high temperature and high pressure steam after the step (a).