1. A method for manufacturing an integrated circuit comprising:
providing a substrate having solder openings provided therein and a conductive layer thereon;
processing the conductive layer to form a plurality of pads over the solder openings in the substrate;
depositing a mask over the plurality of pads;
forming openings in the mask over at least two pads of the plurality of pads;
bonding an integrated circuit die over the substrate using a conductive adhesive; and
placing the conductive adhesive in the openings in conductive contact with the at least two pads of the plurality of pads.
2. The method as claimed in claim 1 wherein processing the conductive layer uses a metal layer bonded to or integrally deposited on the substrate.
3. The method as claimed in claim 1 wherein placing the conductive adhesive in the openings in the mask includes flowing the conductive adhesive under bonding pressure between the substrate and the integrated circuit die.
4. The method as claimed in claim 1 additionally comprising:
bonding a conductive plane over the substrate and under the integrated circuit die, the bonding using the conductive adhesive and providing conductive contact between the conductive adhesive and the conductive plane.
5. The method as claimed in claim 1 additionally comprising:
bonding a conductive plane over the substrate, the bonding using the conductive adhesive and providing conductive contact between the conductive adhesive and the conductive plane; and
bonding the integrated circuit die to the conductive plane.
6. A method for manufacturing an integrated circuit comprising:
providing a substrate having solder openings provided therein and a metal layer thereon;
processing the metal layer to form a plurality of pads over the solder openings in the substrate;
depositing a soldermask over the plurality of pads;
forming openings in the soldermask over at least two pads of the plurality of pads;
bonding an integrated circuit die over the substrate using a conductive die attach adhesive; and
placing the conductive die attach adhesive in the openings in the soldermask and in conductive contact with the at least two pads of the plurality of pads.
7. The method as claimed in claim 6 wherein processing the metal layer uses a metal layer bonded to or integrally deposited on the substrate.
8. The method as claimed in claim 6 wherein placing the conductive die attach adhesive in the openings in the soldermask includes flowing the conductive die attach adhesive under bonding pressure between a ground plane and the substrate.
9. The method as claimed in claim 6 wherein:
processing the metal layer forms a power cross-connect connecting two power pads of the plurality of pads; and
additionally comprising:
bonding a ground plane over the substrate and under the integrated circuit die, the ground plane, the bonding using the conductive die attach adhesive and providing conductive contact between the conductive die attach adhesive and the ground plane.
10. The method as claimed in claim 6 wherein:
processing the metal layer forms a power cross-connect connecting two power pads of the plurality of pads; and
additionally comprising:
bonding a ground plane over the substrate, the bonding using the conductive die attach adhesive and providing conductive contact between the conductive die attach adhesive and the ground plane; and
bonding the integrated circuit die to the ground plane.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for producing m (where m is an integer of 1 or more) number of molds for nanoimprinting in which anodic alumina having a microrelief structure composed of a plurality of pores of a period equal to or less than the wavelength of visible light is formed on the surface of an aluminum base material, comprising:
one or more anodic oxidation steps for anodically oxidizing an aluminum base material in an electrolytic solution for each of m number of aluminum base materials, and
a difference (X\u2212X0) between the aluminum concentration X in the electrolytic solution and the aluminum concentration X0 in the electrolytic solution immediately prior to the first anodic oxidation step of the first aluminum base material is 1000 ppm or less in all of the anodic oxidation steps.
2. The method for producing a mold for nanoimprinting according to claim 1, wherein m is an integer of 2 or more.
3. The method for producing a mold for nanoimprinting according to claim 1, wherein the electrolytic solution is an aqueous oxalic acid solution.
4. The method for producing a mold for nanoimprinting according to claim 3, wherein the aluminum concentration in the electrolytic solution is determined from the titrated amount of an aqueous alkaline solution in the flat portion of a titration curve that appears between a first equivalent point and a second equivalent point when the electrolytic solution has been titrated with the aqueous alkaline solution.
5. The method for producing a mold for nanoimprinting according to claim 4, wherein a calibration curve is prepared in advance between an aluminum concentration X\u2032 and a titrated amount Y\u2032 of an aqueous alkaline solution in the flat portion of a titration curve that appears between a first equivalent point and a second equivalent point when having titrated an aqueous oxalic acid solution having an aluminum concentration X\u2032 with an aqueous alkaline solution having an alkaline concentration Z, and
the calibration curve is used to determine an aluminum concentration X in the electrolytic solution from a titrated amount Y of the aqueous alkaline solution in the flat portion of a titration curve that appears between a first equivalent point and a second equivalent point when the electrolytic solution has been titrated with an aqueous alkaline solution having an alkaline concentration Z.
6. (canceled)
7. The method for producing a film having a microrelief structure on a surface of the film with use of a mold for nanoimprinting produced by the method according to claim 1.
8. The method for producing a mold for nanoimprinting according to claim 1, wherein production of the mold for nanoimprinting is discontinued in case the difference (X\u2212X0) has exceeded 1000 ppm.
9. The method for producing a mold for nanoimprinting according to claim 1, wherein controlling the difference (X\u2212X0) to be 1000 ppm or less.
10. The method for producing a mold for nanoimprinting according to claim 2, wherein the number of m is 10 or more.