1-20. (canceled)
21. A method of applying a camouflage pattern to a tire, comprising steps of
sequentially applying two or more layers of liquid comprising at least one elastomer and a colorant, each layer being applied to all or part of an external tire surface, wherein the elastomeric coating comprises an elastomer selected from the group consisting of ethylene methacrylate copolymer and terpolymers;
drying or curing said two or more layers to form an elastomeric coating on said external tire surface;
such that a plurality of colored elastomeric regions disposed on said external tire surface is obtained which comprises a camouflage pattern of at least two different colors.
22. The method of claim 21, further comprising a step of cleaning said external surface prior to applying said liquid comprising said at least one elastomer.
23. The method of claim 21, wherein each of said colored elastomeric regions is of thickness between about 0.1 and about 2 microns.
24. The method of claim 21, wherein said colorant is selected from the group consisting of dyes and pigments.
25. The method of claim 21, wherein said liquid further comprises curing agents.
26. The method of claim 22, wherein said cleaning step comprises cleaning said external surface with an alcohol.
27. The method of claim 21, wherein said at least one external surface is a sidewall surface.
28. The method of claim 21, wherein the coating comprises at least two distinct color regions in a forest, mountain region, or desert camouflage pattern, said at least two different colors selected from olive drab, brown, yellow, tan, and black.
29. The method of claim 21, further comprising a step of pretreating said external surface with a chlorinating agent prior to applying said liquid comprising said at least one elastomer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of etching silicon through a mask comprising:
(a) forming a layer of organic resin as a mask over a free surface of a device to be etched;
(b) placing the device on a stage;
(c) locating an ink-jet print device over the device to be etched and in close proximity thereto, the ink-jet device and stage being moveable relative to one another;
(d) using an additive to adjust the viscosity of a reactive material to that required by the ink-jet device;
(e) supplying the ink-jet device with the reactive material with the additive added;
(f) moving the device and the ink-jet device relative to one another under control of control means;
(g) controlling the ink-jet device to deposit predetermined amounts of the reactive material onto a surface of the mask in a predetermined pattern as the device and the ink-jet device move relative to one another, to form openings in the mask, thereby exposing the silicon surface in areas to be etched; and
(h) applying a dilute solution of hydrofluoric acid (HF) and potassium permnanganate (KMnO4) to the silicon surface exposed through the mask to thereby etch the silicon to a desired depth.
2. The method of claim 1, wherein the material to be etched is a thin film of silicon on a foreign substrate.
3. The method of claim 1, wherein the area of silicon to be etched has a width and length which are at least an order of magnitude greater than the depth to be etched.
4. The method of claim 1, wherein the silicon to be etched is crystalline silicon.
5. The method as claimed in claim 1, wherein the organic resin material is novolac.
6. The method of claim 1, wherein the stage is an X-Y stage and the ink-jet device is fixed, such that relative motion of the device to be etched and the ink-jet device is achieved by moving the stage under the ink-jet device.
7. The method as claimed in claim 1, wherein the openings in the mask are formed using a solution of potassium hydroxide (KOH) or sodium hydroxide (NaOH).
8. The method of claim 1, wherein the viscosity of the reactive material is adjusted to be in the range of 5 to 20 centipoise.
9. The method of claim 8, wherein the viscosity adjusting additive is glycerol.
10. The method claim 1, wherein the etch is performed until at least a portion of a substrate is exposed in each area to be etched.
11. The method of claim 10, wherein the etch substantially completely removes the silicon from the substrate in each area to be etched.
12. The method of claim 10, wherein the silicon to be etched is a thin film of polycrystalline silicon on a foreign substrate.