1-17. (canceled)
18. A cleaning device for a component loaded with lint in a household appliance for laundry care, the cleaning device comprising:
a rinsing unit to guide rinsing fluid to the component to remove the lint, the rinsing unit having a flow element disposed above the component, the flow element to build up a dynamic pressure of the rinsing fluid in the flow element.
19. The cleaning device of claim 18, wherein the flow element has an elongated part, the elongated part having an opening for an egress of fluid on a side facing the component.
20. The cleaning device of claim 19, wherein the flow element has a cross section that includes at least one narrow point to build up the dynamic pressure.
21. The cleaning device of claim 20, wherein, at least before the at least one narrow point, the flow element has a first interior dimension that is larger than a second interior dimension at the narrow point.
22. The cleaning device of claim 20, wherein the at least one narrow point extends over a length of the elongated part of the flow element.
23. The cleaning device of claim 20, wherein the at least one narrow point has a symmetric cross section.
24. The cleaning device of claim 20, wherein the at least one narrow point has an asymmetric cross section.
25. The cleaning device of claim 19, wherein the opening in the elongated part of the flow element on the side facing the component extends over a length of the elongated part.
26. The cleaning device of claim 19, wherein the flow element has at least one element to at least one of position and hold the flow element on the component.
27. The cleaning device of claim 26, wherein the at least one element is disposed on the elongated part of the flow element.
28. The cleaning device of claim 27, wherein the at least one element and the elongated part of the flow element are a single piece.
29. The cleaning device of claim 26, wherein the at least one element is disposed on the side of the elongated part of the flow element facing the component and extends downward.
30. The cleaning device of claim 26, wherein two elements are disposed on respective opposing ends of the elongated part of the flow element and extend downward and parallel to one another.
31. The cleaning device of claim 18, wherein the flow element has a connector for a supply line for the rinsing fluid.
32. The cleaning device of claim 31, wherein the connector is disposed on a side of the elongated part of the flow element that faces away from the component.
33. The cleaning device of claim 18, wherein the flow element is configured as a single piece.
34. The cleaning device of claim 33, wherein the single piece is a single-piece injection molded part.
35. The cleaning device of claim 18, wherein the component is a heat exchanger.
36. A household appliance for laundry care, comprising:
a component loaded with lint; and
a rinsing unit to guide rinsing fluid to the component to remove the lint, the rinsing unit having a flow element disposed above the component, the flow element to build up a dynamic pressure of the rinsing fluid in the flow element.
37. A method for cleaning a component loaded with lint in a household appliance for laundry care, the method comprising:
guiding rinsing fluid with a rinsing unit to the component for lint removal;
building up a dynamic pressure of the rinsing fluid in a flow element due to an inner form of the flow element, wherein the flow element is assigned to the rinsing unit.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A solar cell comprising:
a substrate including a plurality of unit cell regions and a plurality of wiring regions positioned between the unit cell regions;
a first semiconductor layer being formed on any one unit cell region of the plurality of unit cell regions;
a partition layer being formed on the first semiconductor layer and partitioning a region on the first semiconductor layer into first and second regions;
a separation layer being formed on any one wiring region of the plurality of wiring regions;
a first electrode layer being formed on the first region of the first semiconductor layer;
a second semiconductor layer being formed on the second region of the first semiconductor layer;
a second electrode layer being formed on the second semiconductor layer; and
an electrode connection layer being connected to one end of the second electrode layer as the same layer and being formed on the separation layer.
2. The solar cell according to claim 1, wherein the substrate includes any one of glass and plastic.
3. The solar cell according to claim 1, wherein at least one side of the substrate is textured.
4. The solar cell according to claim 1, wherein nano-holes are formed between the substrate and the first semiconductor layer.
5. The solar cell according to claim 1, wherein the first semiconductor layer is a p-type semiconductor layer.
6. The solar cell according to claim 5, wherein the first semiconductor layer includes any one of CIGS (copper indium gallium selenide), CdTe and CZTS (copper zinc tin selenide).
7. The solar cell according to claim 1, wherein the partition layer is a photoresist layer with a reverse trapezoidal shape.
8. The solar cell according to claim 1, wherein the first electrode layer, the second electrode layer and the electrode connection layer include any one of Mo, Al, Ag, Au, Cu, Pt, Ni, Pd, Ti, Sn, Sb, Co, Tr, Ru, Rh and Cd.
9. The solar cell according to claim 1, wherein the second semiconductor layer is an n-type semiconductor layer.
10. The solar cell according to claim 9, wherein the second semiconductor layer includes any one of metal oxide including ZnO and ZrO, metal nitride including GaN, metal hydrate including In(OH)xSy, MexZny(OH)zSq, MexIny(OH)zSq, MexZny(OH)zSeq and MexIny(OH)zSeq, amorphous silicon, conducting polymer, and semiconducting organic material.
11. The solar cell according to claim 1, further comprising:
a hole injection layer being formed between the first semiconductor layer and the first electrode layer.
12. The solar cell according to claim 11, wherein a work function of the hole injection layer ranges between those of the first semiconductor layer and the first electrode layer, and the hole injection layer includes any one of metal, metal oxide, metal nitride, metal sulfide, metal chelate, and organic material.
13. The solar cell according to claim 12, wherein the work function of the hole injection layer is from 3.0 eV to 7.0 eV.
14. The solar cell according to claim 1, further comprising:
a buffer layer being formed between the first semiconductor layer and the second semiconductor layer.
15. The solar cell according to claim 14, wherein an energy band of the buffer layer ranges between those of the first semiconductor layer and the second semiconductor layer, and the buffer layer includes any one of metal, metal alloy, metal oxide including ZnOx, metal nitride including GaN and MexGayNz, metal hydrate including Zn(OH)x, metal sulfide including CdS, ZnSx, In(OH)xSy, InS, MexZny(OH)zSq and MexIny(OH)zSq, metal selenide including ZnSe, PbSe, MexZny(OH)zSeq and MexIny(OH)zSeq, conducting polymer, and semiconducting organic material.
16. The solar cell according to claim 1, wherein the separation layer comprises a first separation layer being formed to have a thickness substantially the same as that of the first semiconductor layer, and a second separation layer being formed at one end of the first separation layer as the same layer.
17. The solar cell according to claim 16, wherein the second separation layer is a photoresist layer with a trapezoidal shape.
18. The solar cell according to claim 17, wherein the electrode connection layer is formed on the second separation layer.
19. The solar cell according to claim 1, wherein the electrode connection layer is connected as the same layer to one end of a first electrode layer being formed on a unit cell region neighboring the one unit cell region.
20. The solar cell according to claim 19, wherein by means of the electrode connection layer, the one unit cell region and the unit cell region neighboring the one unit cell region are electrically connected in series, and all the unit cell regions on the substrate are electrically connected in series.
21. The solar cell according to claim 1, further comprising:
a low reflection layer being formed between the substrate and the first semiconductor layer.
22. The solar cell according to claim 21, wherein the low reflection layer includes a material of which a refractive index ranges between those of the substrate and the first semiconductor layer.
23. The solar cell according to claim 22, wherein the low reflection layer includes at least one of SixNy, SiOxNy, Al2O3, MgO, TiO2, SiO2, SnOx and MgFx.
24. The solar cell according to claim 1, wherein the separation layer covers edges of the first semiconductor layer and serves as an insulation layer.
25. The solar cell according to claim 1, further comprising:
an insulation layer being formed on the separation layer and covering edges of the separation layer and the first semiconductor layer.
26. The solar cell according to claim 24, wherein the insulation layer includes at least one of SiOx, SiNx, polymer and photoresist.
27. A method for fabricating a solar cell, comprising:
(a) providing a substrate including a plurality of unit cell regions and wiring regions positioned between the unit cell regions;
(b) forming a first semiconductor layer on any one unit cell region of the plurality of unit cell regions;
(c) simultaneously forming a partition layer on the first semiconductor layer and a separation layer on any one wiring region of the plurality of wiring regions;
(d) when a region on the first semiconductor layer is partitioned into first and second regions by the partition layer, forming a second semiconductor layer on the second region; and
(e) forming a first electrode layer on the first semiconductor layer, a second electrode layer on the second semiconductor layer, and an electrode connection layer on the separation layer.
28. A method for fabricating a solar cell, comprising:
(a) providing a substrate including a plurality of unit cell regions and a plurality of wiring regions positioned between the unit cell regions;
(b) forming a first semiconductor layer on any one unit cell region of the plurality of unit cell regions;
(c) forming a separation layer on any one wiring region of the plurality of wiring regions;
(d) when a region on the first semiconductor layer is partitioned into first and second regions by a partition layer to be formed on the first semiconductor layer, forming a second semiconductor layer on the second region;
(e) forming the partition layer on the first semiconductor layer; and
(f) forming a first electrode layer on the first semiconductor layer, a second electrode layer on the second semiconductor layer, and an electrode connection layer on the separation layer.
29.-53. (canceled)
54. The solar cell according to claim 25, wherein the insulation layer includes at least one of SiOx, SiNx, polymer and photoresist.