1. A method for manufacturing a semiconductor device comprising:
forming a semiconductor film comprising amorphous silicon on an insulating surface:
providing said semiconductor film with a metal containing material for promoting crystallization of silicon;
crystallizing said semiconductor film provided with said metal containing material;
annealing said semiconductor film in an oxidizing gas containing atmosphere;
irradiating the crystallized semiconductor film by laser beam;
heating the semiconductor film at 400\xb0 C. or higher to reduce a spin density of said semiconductor film.
2. A method according to claim 1, wherein said semiconductor film is formed by CVD.
3. A method according to claim 2, wherein said CVD is LPCVD.
4. A method according to claim 1, wherein said semiconductor film is at a thickness of from 500 to 1500 \u212b.
5. A method according to claim 1, wherein said laser is selected from the groups consisting of KrF excimer laser, XeCl excimer laser, ArF excimer laser and XeF excimer laser.
6. A method according to claim 1, wherein said oxidizing gas is selected from oxygen and ozone.
7. A method according to claim 1, wherein said heating step after said irradiating step is carried out in a nitrogen containing atmosphere.
8. The method according to claim 1 wherein said metal containing material comprises a metal selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag, Au.
9. The method according to claim 1 wherein said metal containing material comprises a metal selected from the group consisting of In, Sn, P, As, and Sb.
10. A method for manufacturing a semiconductor device comprising:
forming a semiconductor film comprising amorphous silicon on an insulating surface;
providing said semiconductor film with a metal containing material at least partly;
crystallizing said semiconductor film;
forming a silicon oxide film on said semiconductor film;
irradiating a laser beam to said semiconductor film through said silicon oxide film; and then
heating the semiconductor film to reduce a spin density of said semiconductor film.
11. A method according to claim 10, wherein said semiconductor film is formed by CVD.
12. A method according to claim 11, wherein said CVD is LPCVD.
13. A method according to claim 10, wherein said semiconductor film is at a thickness of from 500 to 1500 \u212b.
14. A method according to claim 10, wherein said laser is selected from the groups consisting of KrF excimer laser, XeCl excimer laser, ArF excimer laser and XeF excimer laser.
15. A method according to claim 10, wherein said irradiating a laser beam is carried out in a nitrogen containing atmosphere.
16. A method according to claim 10, wherein said heating step after said irradiating step is carried out in a nitrogen containing atmosphere.
17. The method according to claim 10 wherein said metal containing material comprises a metal selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag, Au.
18. The method according to claim 10 wherein said metal containing material comprises a metal selected from the group consisting of In, Sn, P, As, and Sb.
19. A method for manufacturing a semiconductor device comprising;
forming a semiconductor film comprising amorphous silicon on an insulating surface;
providing said semiconductor film with a metal containing material at least partly;
crystallizing said semiconductor film after providing said metal containing material;
irradiating the crystallized semiconductor film by laser beam; and
heating the semiconductor film to reduce a spin density of said semiconductor film; and then
said method further comprising a step of oxidizing a surface of said semiconductor film after the crystallization thereof.
20. A method according to claim 19, wherein said step of oxidizing is performed after the irradiating of said laser beam.
21. A method according to claim 19, wherein said semiconductor film is formed by CVD.
22. A method according to claim 21, wherein said CVD is LPCVD.
23. A method according to claim 19, wherein said semiconductor film is at a thickness of from 500 to 1500 \u212b.
24. A method according to claim 19, wherein said laser is selected from the groups consisting of KrF excimer laser, XeCl excimer laser, ArF excimer laser and XeF excimer laser.
25. A method according to claim 19, wherein said heating step after said irradiating step is carried out in a nitrogen containing atmosphere.
26. The method according to claim 19 wherein said metal containing material comprises a metal selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag, Au.
27. The method according to claim 19 wherein said metal containing material comprises a metal selected from the group consisting of In, Sn, P, As, and Sb.
28. A method for manufacturing a semiconductor device comprising:
forming a semiconductor film comprising amorphous silicon on an insulating surface;
providing said semiconductor film with a metal containing material at least partly;
crystallizing said semiconductor film after providing said metal containing material;
irradiating a light to the crystallized semiconductor film to further improve the crystallinity;
heat treating the irradiated semiconductor film to reduce a number of spin density in the crystallized semiconductor film; and then,
heat treating the semiconductor film in a hydrogen containing atmosphere to effect hydrogenation of the semiconductor film.
29. A method according to claim 28, wherein said semiconductor film is formed by LPCVD.
30. A method according to claim 28, wherein said light is a laser beam.
31. The method according to claim 28 wherein said metal containing material comprises a metal selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag, Au.
32. The method according to claim 28 wherein said metal containing material comprises a metal selected from the group consisting of In, Sn, P, As, and Sb.
33. A method for fabricating a semiconductor device comprising:
forming a semiconductor film comprising amorphous silicon on an insulating surface;
providing said semiconductor film with a metal containing material at least partly;
crystallizing said semiconductor film after providing said metal containing material;
irradiating a light to the crystallized semiconductor film after said crystallizing step in order to further increase crystallinity;
annealing the semiconductor film by thermal treatment after said crystallizing step to reduce the number of spin density in the semiconductor film; and then,
hydrogenating the semiconductor film.
34. A method according to claim 33, wherein said semiconductor film is formed by LPCVD.
35. A method according to claim 33, wherein said light is a laser beam.
36. The method according to claim 33 wherein said metal containing material comprises a metal selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag, Au.
37. The method according to claim 33 wherein said metal containing material comprises a metal selected from the group consisting of In, Sn, P, As, and Sb.
38. A method for fabricating a semiconductor device comprising:
forming a semiconductor film comprising amorphous silicon on an insulating surface;
providing said semiconductor film with a metal containing material at least partly;
crystallizing said semiconductor film after providing said metal containing material;
irradiating a light to crystalline the semiconductor film after said crystallizing step to further crystallize the semiconductor film;
annealing the semiconductor film by thermal treatment after said crystallizing step to reduce the number of dangling bonds in the semiconductor film; and then,
hydrogenating the semiconductor film.
39. A method according to claim 38, wherein said light is a laser beam.
40. A method according to claim 38, wherein said semiconductor film is formed by LPCVD.
41. The method according to claim 38 wherein said metal containing material comprises a metal selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag, Au.
42. The method according to claim 38 wherein said metal containing material comprises a metal selected from the group consisting of In, Sn, P, As, and Sb.
43. A method for manufacturing a semiconductor device comprising:
forming a semiconductor film comprising amorphous silicon on an insulating surface;
providing said semiconductor film with a metal containing material at least partly;
crystallizing said semiconductor film after providing said metal containing material;
performing a rapid thermal annealing on the crystallized semiconductor film to further improve crystallinity;
heat treating the semiconductor film after the rapid thermal annealing in order to reduce a number of spin density in the crystallized semiconductor film; and
heat treating the semiconductor film in a hydrogen containing atmosphere to effect hydrogenation of the semiconductor film.
44. The method according to claim 43 wherein said metal containing material comprises a metal selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag, Au.
45. The method according to claim 43 wherein said metal containing material comprises a metal selected from the group consisting of In, Sn, P, As, and Sb.
46. A method for fabricating a semiconductor device comprising:
forming a semiconductor film comprising amorphous silicon on an insulating surface;
providing said semiconductor film with a metal containing material at least partly;
crystallizing said semiconductor film after providing said metal containing material;
performing a rapid thermal annealing on the crystallized semiconductor film to further crystallize the semiconductor film;
annealing the semiconductor film by thermal treatment after said crystallizing step to reduce the number of dangling bonds in the semiconductor film; and then,
hydrogenating the semiconductor film.
47. The method according to claim 46 wherein said metal containing material comprises a metal selected from the group consisting of Fe, Co, Ni, Ru, Rb, Pd, Os, Ir, Pt, Cu, Ag, Au.
48. The method according to claim 46 wherein said metal containing material comprises a metal selected from the group consisting of In, Sn, P, As, and Sb.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of executing a transaction on a cash register or printer by a consumer comprising:
selecting a cash register or printer having a microprocessor controller therein and having a Vending Universal Wireless Interface (VUWI) coupled thereto;
activating an applet on a personal wireless communication device to establish a wireless link with said cash register or printer coupled VUWI;
communicating between said personal wireless communication device and said VUWI to acquire information therefrom;
establishing a wireless link between said personal wireless communication device and a remote computer server;
transmitting information acquired from said cash register or printer by said personal wireless communication device to said remote computer server along with a request for credit approval for a transaction;
transmitting a credit approval response from said remote computer server to said personal communication device for a transaction when such credit is approved;
transmitting said credit approval from said personal wireless communication device to said cash register or printer VUWI; and
activating said cash register or printer to pay for a product or service;
thereby eliminating the need to use currency, or to surrender one’s credit card to a third party, or for a dedicated connection between a cash register and a remote computer server in making a credit payment on a cash register or printer.
2. The method of executing a transaction on a cash register or printer by a consumer in accordance with claim 1 in which the selected cash register or printer coupled VUWI is coupled through the cash register or printer USB port.
3. The method of executing a transaction on a cash register or printer by a consumer in accordance with claim 1 in which the selected cash register or printer coupled VUWI is coupled through the cash register or printer serial port.
4. The method of executing a transaction on a cash register or printer by a consumer in accordance with claim 1 including the step of downloading the applet on a users personal wireless communication device prior to activating said applet.
5. The method of executing a transaction on a cash register by a consumer in accordance with claim 4 including the step of acquiring an amount owed for a register receipt from said cash register by said personal wireless communication device for transmission to said remote computer server.
6. The method of executing a transaction on a cash register or printer by a consumer in accordance with claim 4 including the step of acquiring the users cellular telephone identification by said applet for transmission to said remote computer server.
7. The method of executing a transaction on a cash register or printer by a consumer in accordance with claim 6 including the step of dialing a posted telephone number for downloading said applet.
8. The method of executing a transaction on a cash register or printer by a consumer in accordance with claim 7 including the step of said remote server verifying said personal wireless communication device identification and personal identification information upon receipt of a request from said personal wireless communication device.
9. The method of executing a transaction on a cash register or printer by a consumer in accordance with claim 8 including the step of said remote computer server generating an approval or denial response to personal wireless communication device.
10. A system for executing a transaction on a cash register or printer by a consumer using the consumer’s personal wireless communication device comprising:
a cash register or printer having a vending universal wireless interface (VUWI) coupled to said cash register or printer microprocessor controller;
a personal wireless communication device having a local transceiver and having an applet thereon for communication between said personal wireless communication device and said vending universal wireless interface; and
a remote computer server linkable with said personal wireless communication device for receiving requests from said personal wireless communication device for approval of a transaction on said cash register or printer, said remote computer server being adapted to respond to approval for credit to complete a transaction.
11. The system for executing a transaction on a cash register by a consumer using the consumer’s personal wireless communication device in accordance with claim 10 in which said vending universal wireless interface is coupled to said cash register or printer USB port.
12. The system for executing a transaction on a cash register by a consumer using the consumer’s personal wireless communication device in accordance with claim 10 in which said vending universal wireless interface is coupled to said cash register or printer serial port.
13. The system for executing a transaction on a cash register by a consumer using the consumer’s personal wireless communication device in accordance with claim 10 in which said personal communication device is a cellular telephone.
14. The system for executing a transaction on a cash register by a consumer using the consumer’s personal wireless communication device in accordance with claim 10 in which said vending universal wireless interface includes an RF transceiver.
15. The system for executing a transaction on a cash register by a consumer using the consumer’s personal wireless communication device in accordance with claim 10 in which personal wireless communication device applet includes means for setting up a communication link with said vending universal wireless Interface and acquiring cash register identification information therefrom.
16. The system for executing a transaction on a cash register by a consumer using the consumer’s personal wireless communication device in accordance with claim 15 in which said cash register is a cash register for accepting payments for products or services rendered.
17. A method of executing a transaction on a printer by a consumer comprising:
coupling a Vending Universal Wireless Interface (VUWI) to a printer microprocessor controller
activating an applet on a personal wireless communication device to establish a wireless link with said printer coupled VUWI;
communicating between said personal wireless communication device and said VUWI to acquire information from said printer;
establishing a wireless link between said personal wireless communication device and a remote computer server;
transmitting information acquired from said printer by said personal wireless communication device to said remote computer server along with a request for credit approval for a transaction;
transmitting a response from said remote computer server to said personal communication device authorizing a predetermined credit approval for a transaction when such credit is authorized;
transmitting said credit approval from said personal wireless communication device to said printer VUWI; and
activating said printer to print a creditdebit card receipt.