1. An acoustic treatment device, comprising:
a vessel arranged to hold a sample that includes a liquid, the vessel capable of holding a sample volume of about 300 microliters or less; and
a cap constructed and arranged to engage with the vessel and cover an opening of the vessel, the cap including a split septum; and
an energy director including a rod attached to and depending from the cap and configured to be positioned in a portion of the sample when the cap is engaged with the opening, the energy director having a hydrophobic or hydrophilic surface with crevices, wherein the surface with crevices is arranged to be located in the sample to disrupt material of the sample on or near the surface with crevices by controlling interaction between acoustic energy having a frequency of between about 100 kilohertz and about 100 megahertz and a focal zone with a width of less than about 2 centimeters and the sample when the acoustic energy is emitted remotely from the vessel and applied to the vessel.
2. The device of claim 1, wherein the energy director is made of a hydrophilic material and the vessel is made of a hydrophilic material, and wherein the vessel and energy director are arranged to enhance shearing of DNA in the sample having a base pair length of 3000 or less caused by the acoustic energy.
3. The device of claim 1, wherein the energy director is made of a hydrophobic material and the vessel is made of a hydrophobic material, and wherein the vessel and energy director are arranged to enhance shearing of DNA in the sample having a base pair length of 3000 or more caused by the acoustic energy.
4. The device of claim 1, further comprising an acoustic energy source for providing the acoustic energy having the focal zone to the sample while the sample is in the vessel and separated from the acoustic energy source; and
a vessel holder arranged to support the vessel, the vessel holder adapted to position the vessel at a location at least partially in the focal zone of the acoustic energy.
5. The device of claim 1, wherein the energy director is configured to control a headspace of the sample in the vessel.
6. The device of claim 5, wherein the cap and the energy director are configured to reduce splashing in the headspace of the sample in the vessel.
7. The device of claim 1, wherein the energy director is adapted to increase mixing of the sample that would otherwise be less in the absence of the energy director.
8. The device of claim 1, wherein the septum is adapted to move relative to the vessel resulting in adjustment of a headspace of the sample in the vessel.
9. The device of claim 1, wherein the septum provides a seal at the opening of the vessel.
10. The device of claim 1, wherein the crevices are naturally occurring defects of the hydrophobic or hydrophilic surface.
11. The device of claim 1, wherein the crevices are artificially occurring from scratching, etching, grinding, engraving, milling, drilling, sand blasting, ion-beam processing, molding, pressing, hot stamping, microlithography, micromachining or microfabrication.
12. The device of claim 1, wherein the crevices lower a cavitation threshold of the sample on the surface of the energy director.
13. The device of claim 12, wherein the crevices promote cavitation in the sample that increases mixing of the sample that would otherwise be less in the absence of the cavitation in the sample.
14. The device of claim 1, wherein the energy director includes at least one element that is rod-shaped, plug-shaped, bead-shaped or irregularly shaped.
15. The device of claim 1, wherein the energy director, the cap and the vessel are constructed and arranged to enhance the shearing of nucleic acid in the sample to 3000 base pairs or less.
16. The device of claim 6, wherein the reduction of splashing at the headspace of the sample in the vessel enhances a duration in which the sample is exposed to the focal zone of the acoustic energy.
17. The device of claim 1, wherein the energy director is formed unitarily with the cap.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1: Heavy metal oxide thin films composition (X in % molar):
X1 % M1On1-X2 % M2On2-X3 % M3On3-X4 % M4On4-X5 % M5On5-X6 % M6On6
40\u2266X1\u2266100%
0\u2266X2\u226660%
0\u2266X3\u226660%
0\u2266X4\u226660%
0\u2266X5\u226660%
0\u2266X6\u226650%
0\u2266X2+X3+X4+X5+X6\u226660%
2. The constituent of the heavy metal oxide thin films are selected from transition metal, lanthanide ions, actinide elements, and elements of group Ia, IIa, IIIa, IVa, Va, IIb, IIIb, IVb, Vb of the periodic table.
3: The cation M1 according to claim 1 is at least one of cations selected among Zr, Hf, Ti, Zn and Cd
4: the cation M2 according to claim 1 is at least one of cations selected from alkaline earth metal, Barium and or strontium, and or calcium and or magnesium
5: The cation M3 according to claim 1 is at least one of cations selected in alkali element cations, Lithium, Sodium, Potassium . . . .
6: the cation M4 is at least one cations selected from the group 3A in periodic table consisting of Al, Ga, In . . .
7: The cation M5 according to claim 1 is at least one cation from the group 4A consisting of Si, Ge, Sn, Pb
8: The cation M6 according to claim 1 is at least one cation from 3B group of periodic table consisting of Sc, Y, La
9: The oxide thin films according to claim 1 which contain at least one element from photosensitive ions and not limited to Ge, Ce, Sn
10: The heavy oxide thin films according to claim 1 which contain at least 0.05% of at least one of transition metal oxides selected from the group consisting of Co, V, Cr, Ag, Cu, Fe, Ni, Mn, . . .
11: The Heavy metal oxide thin films according to claim 1 which contain at least 0.01 w % of at least one of rare-earth oxide selected from the group consisting of La, Ce, Er, Pr, Nd, Tm, Ho, Dy, Yb . . .
12: Thin films according to claim 11 is dried at a temperature higher than 20C in air or under reactive or inert gas atmosphere, containing at least one element, and not limited to, from CCl.sub.4, Cl.sub.2, O.sub.2, N.sub.2, He, Ar, Ne, H.sub.2, HCl, HF, F.sub.2, HBr, H.sub.2.S, SF.sub.6 . . . .
13: Thin films according to claim 10 is dried at a temperature higher than 20C in air or under reactive or inert gas atmosphere, containing at least one element, and not limited to, from CCl.sub.4, Cl.sub.2, O.sub.2, N.sub.2, He, Ar, Ne, H.sub.2, HCl, HF, F.sub.2, HBr, H.sub.2.S, SF.sub.6 . . .
14: The thin films according to claim 11 which contain at least 0.1% of photosensitive element such as GeO.sub.2, CeO.sub.2 and SnO.sub.2
15: the thin films according to claim 10 which contain at least 0.1% of photosensitive element such as GeO.sub.2, CeO.sub.2 and SnO.sub.2
16: Thin films according to claim 1 is deposited as Multilayer oxide thin films
17: Multilayer oxide thin films according to claim 14 is doped with at least 0.01% of at least one of rare-earth oxide selected from the group consisting of La, Ce, Er, Pr, Nd, Tm, Ho, Dy, Yb . . .
18: Thin films according to claim 1 is dried at a temperature higher than 20C in air or under reactive or inert gas atmosphere, containing at least one element, and not limited to, from CCl.sub.4, Cl.sub.2, O.sub.2, N.sub.2, He, Ar, Ne, H.sub.2, HCl, HF, F.sub.2, HBr, H.sub.2S, SF.sub.6 . . .
19: The heavy metal oxide thin films according to claim 1 which contain at least 0.01% of at least one of actinide ions.
20: Thin films according to claim 1 is used as a cladding for fluoride glass fibers
21: Thin film according to claim 1 is used as protecting coating for fluoride glass fibers
22: Thin film according to claim 1 is a cladding for an optical fiber
23: Thin film according to claim 1 is a core of an optical fiber
24: Thin film according to claim 11 is a core of an optical fiber
25: Thin film according to claim 10 is a core of an optical fiber
26: Thin film according to claim 16 is used as multi-cladding for an optical fiber
27: Thin film according to claim 1 is used in optical devices
28: Thin film according to claim 12 is used in optical devices
29: Thin film according to claim 13 is used in optical devices
30: Thin film according to claim 16 is used in optical devices
31: Thin film according to claim 17 is used in optical devices
32: Thin film according to claim 9 is used in optical devices
33: Thin film according to claim 14 is used in optical devices
34: Thin film according to claim 15 is used in optical devices
35: thin film according to claim 1 are used as protection andor antireflection coating on infrared amorphous materials, such as and not limited to halide glasses, oxy-halide glasses, chalcogenide glasses, Germanium oxide based glasses . . .
36: thin film according to claim 1 are used as protection andor antireflection coating on crystalline infrared materials, such as and not limited to, sapphire (Al2O3), ZnS, ZnSe, yttrium oxide (Y2O3).
37: Thin film according to claim 19 are used as optical filters.
38: Thin films according to claim 11 are used as optical filters.