1. A varactor, comprising:
first and second conducting layers, spaced apart from one another such that a given voltage can be applied across the first and second conducting layers; and
an insulator arrangement including at least one insulator layer disposed between the first and second conducting layers, configured to cooperate with the first and second conducting layers to produce a charge pool within said insulator layer which changes responsive to changes in said given voltage such that a device capacitance value between the first and second conducting layers changes responsive to said given voltage.
2. The varactor of claim 1 wherein said insulator arrangement is configured such that increasingly biasing the first conducting layer more positive than the second conducting layer, using said given voltage, produces a corresponding increase in said device capacitance value.
3. The varactor of claim 1 wherein said insulator arrangement includes at least a first insulator layer, adjacent to said first conducting layer, and a second insulator layer, adjacent to said second conducting layer and in a side-by-side relationship with said first insulator layer so as to define a boundary therebetween for producing said charge pool in the second one of said insulator layers proximate to said boundary with the first one of the insulator layers.
4. The varactor of claim 3 wherein said first insulator layer includes a first barrier height and said second insulator layer includes a second barrier height, and the first and second barrier heights are selected to produce tunneling of electrons from said second conducting layer through said second insulator layer, responsive to the given voltage, and to inhibit tunneling of electrons across said first insulator layer to generate said charge pool.
5. The varactor of claim 4 wherein said first barrier height is greater than said second barrier height.
6. The varactor of claim 5 wherein said first barrier height is much greater than 1 eV and said second barrier height is less than 0.3 eV.
7. The varactor of claim 3 wherein said first insulator layer includes a first capacitance value and said second insulator layer includes a second capacitance value such that an application of said given voltage which causes the first conducting layer to be increasingly negative with respect to the second conducting layer, below a given threshold value of said given voltage, causes said device capacitance value to approach a series combination of said first capacitance value and said second capacitance value and application of said given voltage which causes the first conducting layer to be increasingly positive with respect to the second conducting layer, above said given threshold value of said given voltage, causes said device capacitance value to approach said first capacitance value of the first insulator layer.
8. The varactor of claim 7 wherein said varactor is configured in a way which sets said threshold value of said given voltage, at least approximately, to zero volts.
9. The varactor of claim 1 wherein said insulator arrangement includes only one layer of an insulation material between said first and second conducting layers and said insulation material includes an insulator barrier height that cooperates with a second layer work function of said second conducting layer to produce a negative barrier height between the insulation material and the second conducting layer, responsive to said given voltage, such that the charge pool is formed in said insulator material proximate to a boundary with the second conducting layer.
10. The varactor of claim 9 wherein said charge pool includes a width that is modulated by changes in said given voltage.
11. The varactor of claim 1 wherein said insulator arrangement includes at least one layer of an amorphous material.
12. The varactor of claim 1 wherein said insulator arrangement is configured to cooperate with said first and second conducting layers to support electron tunneling, responsive to said given voltage, which produces said charge pool within the insulator arrangement, said charge pool storing an amount of charge in the insulator arrangement that changes based on said electron tunneling such that said device capacitance value between the first and second conducting layers changes responsive to said given voltage.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of manufacturing an active matrix substrate, comprising:
forming a plurality of active elements on a first substrate;
forming a plurality of adhesion parts on a second substrate, each of the adhesion parts including an adhesive and a height control member surrounding the adhesive;
selectively transferring said plurality of active elements to said second substrate in such a manner that said plurality of active elements adhere to said adhesion parts;
forming interconnections between said plurality of active elements transferred onto said second substrate; and
transferring said plurality of active elements to a third substrate via a temporary adhesive layer between said forming a plurality of active elements on a first substrate and said selectively transferring said plurality of active elements to said second substrate, wherein
said selectively transferring said plurality of active elements to said second substrate includes decreasing adhesion of said temporary adhesive layer on said third substrate which bonds said selected active elements.
2. The method according to 1, wherein said forming a plurality of adhesion parts, each including a height control member, includes forming said height control member in such a manner that at least one cut or one hole is made in a wall surface of said height control member.
3. The method according to 1, wherein said selectively transferring said plurality of active elements to said second substrate includes placing said selected active elements on said adhesive and said height control members.
4. The method according to 1, wherein said selectively transferring said plurality of active elements to said second substrate includes arranging said selected active elements inside said height control members to place on said adhesive.
5. A method of manufacturing an active matrix substrate, comprising:
forming a plurality of active elements on a first substrate;
forming a plurality of adhesion parts on a second substrate, each of said plurality of adhesion parts including a plurality of height control members in an adhesive;
selectively transferring said plurality of active elements to said second substrate in such a manner that said plurality of active elements adhere to said plurality of adhesion parts;
forming interconnections between said plurality of active elements transferred onto said second substrate; and
transferring said plurality of active elements to a third substrate via a temporary adhesive layer between said forming a plurality of active elements on a first substrate and said selectively transferring said plurality of active elements to said second substrate, wherein
said selectively transferring said plurality of active elements to said second substrate includes decreasing, adhesion of at least a part of said temporary adhesive layer on said third substrate which bonds said selected active elements.
6. The method according to 5, wherein said forming a plurality of adhesion parts, each including a plurality of height control members in adhesive, includes distributing sphere-like, pillar-like, or fiber-like members in said adhesive as said height control members.
7. The method according to 5, wherein said forming a plurality of adhesion parts, each including a plurality of height control members, includes standing a plurality of pillar-like members side by side in said adhesive as said height control members.
8. The method according to 7, wherein said standing a plurality of pillar-like members side by side in said adhesive includes forming a height control member so as to surround said adhesive and said plurality of pillar-like members.