1. A method for adjusting a radio-frequency circuit by impedance loading features, comprising:
designing a plurality of test fixtures each corresponding to an impedance loading area according to a predefined operating frequency band;
coupling each of the plurality of test fixtures to a test point of the radio-frequency circuit for measuring a plurality of radio-frequency characteristic sets;
determining an optimal impedance loading area of the radio-frequency circuit according to the plurality of radio-frequency characteristic sets; and
adjusting the radio-frequency circuit according to the optimal impedance loading area.
2. The method of claim 1, wherein the plurality of text fixtures are designed according to an impedance matching and a voltage standing wave ratio (VSWR) corresponding to the predefined operating frequency band.
3. The method of claim 1, wherein each of the plurality of radio-frequency characteristic sets comprises a transmitting power, a receiving sensitivity, and an electrical consumption.
4. The method of claim 3, wherein a plurality of the radio-frequency characteristic sets are measured by the plurality of test fixtures using a test device, and an impedance of the test device is 50\u03a9.
5. The method of claim 4, wherein the test device is coupled to a test point of the radio-frequency circuit through one of the plurality of test fixtures for measuring the plurality of radio-frequency characteristic sets.
6. The method of claim 1, wherein determining the optimal impedance loading area of the radio-frequency circuit according to the plurality of radio-frequency characteristic sets comprises:
choosing one of the plurality of the radio-frequency characteristic sets as an optimal radio-frequency characteristic; and
determining the optimal impedance loading area of the radio-frequency circuit according to a test fixture corresponding to the optimal radio-frequency characteristic.
7. The method of claim 6, wherein an antenna and an antenna matching circuit of the radio-frequency circuit are adjusted according to the optimal impedance loading area.
8. The method of claim 1 further comprising estimating a total radiated power (TRP) and a total isotropic sensitivity of the radio-frequency circuit.
9. The method of claim 8, wherein estimating the total radiated power and the total isotropic sensitivity of the radio-frequency circuit is estimating the total radiated power and the total isotropic sensitivity of the radio-frequency circuit according to a radio-frequency characteristic corresponding to the optimal impedance loading area and antenna efficiency of an antenna of the radio-frequency circuit.
10. The method of claim 9, wherein the total radiated power and the total isotropic sensitivity of the radio-frequency circuit are estimated in a three-dimensional microwave anechoic chamber.
11. The method of claim 10, further comprising adjusting the radio-frequency circuit according to the total radiated power and the total isotropic sensitivity.
12. An electronic device for adjustment of a radio-frequency circuit by impedance loading features, comprising:
a plurality of test fixtures each corresponding to an impedance loading area of a predefined operating frequency band;
a test device coupled to a test point of the radio-frequency circuit through one of the plurality of test fixtures for measuring a plurality of radio-frequency characteristic sets of the radio frequency circuit by the plurality of test fixtures; and
a determination device coupled to the test device for determining an optimal impedance loading area of the radio-frequency circuit according to the plurality of the radio-frequency characteristic sets in order to provide a basis for adjustment of the radio-frequency circuit.
13. The electronic device of claim 12, wherein each of the plurality of test fixtures is designed according to an impedance matching and the VSWR corresponding to predefined operating frequency band.
14. The electronic device of claim 12, wherein each of the plurality of radio-frequency characteristic sets has a transmitting power, a receiving sensitivity, and an electrical consumption.
15. The electronic device of claim 12, wherein an impedance of the test device is 50\u03a9.
16. The electronic device of claim 15, wherein the test device comprises a composite analyzer and a network analyzer.
17. The electronic device of claim 16, wherein the test device further includes a power supply.
18. The electronic device of claim 12, wherein the determination device is used to choose an optimal radio-frequency characteristic from the plurality of radio-frequency characteristic sets, and the optimal impedance loading area of the radio-frequency circuit is determined according to a test fixture corresponding to the optimal frequency characteristic.
19. The electronic device of claim 12, wherein the determination device is used to provide a basis for adjustment of an antenna and an antenna matching circuit of the radio-frequency circuit.
20. The electronic device of claim 12 further comprising an estimation device coupled to the determination device for estimating a total radiated power and a total isotropic sensitivity of the radio-frequency circuit.
21. The electronic device of claim 20, wherein the estimation device roughly estimates the total radiated power and the total isotropic sensitivity according to a radio-frequency characteristic of the optimal impedance loading area and antenna efficiency corresponding to an antenna of the radio-frequency circuit.
22. The electronic device of claim 21, wherein the estimation device estimates the total radiated power and the total isotropic sensitivity of the radio-frequency circuit in a three-dimensional microwave anechoic chamber.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of producing a substrate with an electrode, comprising the steps of:
providing a substrate made of synthetic resin;
forming an undercoat layer made of an organic material on a surface of the substrate to relieve stress caused by the difference in a coefficient of thermal expansion between the substrate and an electrode formed thereon;
forming as the electrode an oxide conductive film consisting of an amorphous material or consisting essentially of an amorphous material on the substrate having formed thereon the undercoat layer at a temperature equal to or less than the crystallization temperature of the film; and
crystallizing the oxide conductive film by heating.
2. The method of producing a substrate with an electrode according to claim 1, wherein in the step of forming an oxide conductive film, the oxide conductive film is heated at a temperature of 150\xb0 C. or less.
3. The method of producing a substrate with an electrode according to claim 1, wherein in the step of crystallizing the oxide conductive film, the oxide conductive film is heated at a temperature in the range of 150\xb0 C. to 200\xb0 C.
4. The method of producing a substrate with an electrode according to claim 1, wherein in the step of crystallizing the oxide conductive film, the oxide conductive film is heated at temperature equal to or less than the glass transition temperature of the substrate.
5. The method of producing a substrate with an electrode according to claim 1, wherein the step of crystallizing the oxide conductive film is carried out in an atmosphere free of oxygen.
6. The method of producing a substrate with an electrode according to claim 1, wherein the oxide conductive film is made of indium oxide having a portion substituted by tin.
7. The method of producing a substrate with an electrode according to claim 6, wherein the oxide conductive film has a tin oxide content of less than 5% by weight.
8. The method of producing a substrate with an electrode according to claim 1, wherein, in the oxide conductive film to be formed on the substrate, crystal grains having an average grain size of 200 nm or less are dispersed in an amorphous matrix.
9. The method of producing a substrate with an electrode according to claim 1, wherein, in the step of crystallizing the oxide conductive film, the oxide conductive film is transformed into an aggregate of randomly-oriented crystals having an average grain size of 20 nm or larger.
10. The method of producing a substrate with an electrode according to claim 9, wherein the average grain size of the crystals is 300 nm or less.
11. The method of producing a substrate with an electrode according to claim 1, wherein the thickness of the oxide conductive film is 500 nm or less.
12. The method of producing a substrate with an electrode according to claim 1, wherein, in the film completed by crystallization, the average grain size of crystal grains is in the range of 20 nm to 300 nm.
13. The method of producing a substrate with an electrode according to claim 1, further comprising a step of forming a transparent coating film on a surface of the electrode, the transparent coating film containing a synthetic resin and having a volume resistance in the range of 102\u03a9\xb7cm to 1012\u03c7\xb7cm.
14. The method of producing a substrate with an electrode according to claim 13, wherein after forming a layer made of a light-curing resin on the completed oxide conductive film and exposing regions of the layer corresponding to an electrode pattern for processing the oxide conductive film to cure and form the transparent coating film, the oxide conductive film is processed into the electrode by etching the oxide conductive film with the cured transparent coating film serving as a resist.
15. The method of producing a substrate with an electrode according to claim 13, wherein the thickness of the transparent coating film is in the range of 0.5 \u03bcm to 5 \u03bcm.
16. The method of producing a substrate with an electrode according to claim 13, wherein the thickness of the electrode is 20 nm or less.