1. An optical semiconductor module comprising:
a mounting member extending along a reference plane intersecting a predetermined axis;
a first member having a tubular portion, a first end portion and a second end portion, said tubular portion extending in a direction of the predetermined axis, said first end portion being provided at one end of the tubular portion and being arranged on said mounting member, and said second end portion being provided at the other end of the tubular portion;
an optical semiconductor element arranged in the tubular portion of said first member such that an optical axis thereof is directed in a direction of the predetermined axis;
a second member having a tubular portion extending in a direction of the predetermined axis, said second member being arranged on the second end of said first member; and
an optical waveguide optically coupled to said optical semiconductor element, said optical waveguide extending in the tubular portion of said second member:
2. An optical semiconductor module according to claim 1, further comprising a ferrule accommodated in the tubular portion of said second member,
wherein said optical waveguide includes an optical fiber supported by said ferrule.
3. An optical semiconductor module according to claim 2, further comprising a third member having a tubular portion and a pair of openings, said tubular portion extending in a direction of the predetermined axis and accommodating said second member and said ferrule, and said pair of openings being provided at two ends of the tubular portion;
wherein the optical fiber extends through one of the pair of openings of said third member to reach said ferrule.
4. An optical semiconductor module according to claim 2, wherein
said ferrule has first and second end faces, and
the optical fiber extends from the first end face to the second end face of said ferrule.
5. An optical semiconductor module according to claim 4, further comprising a sleeve, said ferrule is inserted in said sleeve;
wherein said second member has a depressed portion provided in an inner wall surface of the tubular portion, and
wherein said sleeve being arranged in the depressed portion of said second member.
6. An optical semiconductor module according to claim 2 or 4,
wherein the tubular portion of said second member has first and second portions arranged in a direction of the predetermined axis,
wherein the first portion accommodates said ferrule, and
wherein the second portion is provided such that another ferrule can be inserted therein.
7. An optical semiconductor module according to claim 1, further comprising a lens provided between said optical waveguide and said optical semiconductor element.
8. An optical semiconductor module according to claim 1, wherein said optical semiconductor element is either one of a light-emitting element and a light-receiving element.
9. An optical semiconductor module according to claim 1, wherein said first member is secured to said mounting member at an annular connecting portion provided to surround the optical axis of said optical semiconductor element.
10. An optical semiconductor module according to claim 1, wherein said mounting member is included in a cylindrical shape having a diameter of not more than 4 mm and a center axis perpendicular to the reference surface.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A material, comprising:
a low dielectric constant material; and
an additive, wherein the additive includes a compound having a Si\u2014X\u2014Si bridge, wherein X is a number of carbon atoms between 1 and 8.
2. The material of claim 1, wherein the material has a carbon content of greater than approximately 16% atomic concentration.
3. The material of claim 1, wherein X is two.
4. The material of claim 1, wherein the low dielectric material is a porous dielectric.
5. The material of claim 1, wherein the compound has the structural formula:
and R1 to R6 are one of an alkoxy, an alkyl, and a hydrogen.
6. The material of claim 5, wherein at least one of R1 to R6 is a methyl group.
7. The material of claim 1, wherein the dielectric constant is between approximately 1.8 and 2.6.
8. The material of claim 1, wherein the compound includes at least one terminal Si\u2014CH3 group.
9. The material of claim 1, wherein the low dielectric constant material has a first dielectric constant, and the low dielectric constant combined with the additive has a second dielectric constant, and wherein the second dielectric constant is lower than the first dielectric constant.
10. The material of claim 1, wherein the low dielectric constant material has a first carbon content amount, and the low dielectric constant combined with the additive has a second carbon content amount, and wherein the second carbon content amount is at least 10% atomic concentration greater than the first carbon content amount.
11. The material of claim 1, wherein the compound is selected from the group consisting of: bis(triethoxysilyl)ethene, 1-(triethoxysilyl)-2-(diethoxymethylsilyl)ethene, bis(diethoxymethylsilyl)ethene, and bis(diacetoxymethyl)ethylenesilane.
12. A method of depositing a layer on a substrate, comprising:
depositing a dielectric material, wherein the dielectric material includes a low-k dielectric and an additive, and wherein the dielectric material has a dielectric constant less than approximately 3 and a carbon content greater than approximately 15% atomic concentration.
13. The method of claim 12, wherein the depositing includes performing a plasma-enhanced chemical vapor deposition (PECVD) process.
14. The method of claim 12, wherein the depositing includes performing a sol-gel process.
15. The method of claim 14, wherein the sol-gel process includes combining the low-k dielectric material with a precursor, inorganic acid, surfactant, ethanol, and water.
16. A semiconductor device, comprising:
a semiconductor substrate;
a gate feature disposed on the semiconductor substrate; and
a dielectric layer overlying the gate feature, wherein the dielectric layer includes an additive having a compound with the structure formula:
wherein X is \u2014(CH2)n\u2014, n is 1 to 8, and R1 to R6 are one of an alkoxy, an alkyl, and a hydrogen.
17. The semiconductor device of claim 16, wherein at least one of R1 to R6 is a CH3 group.
18. The semiconductor device of claim 16, wherein the dielectric layer is an inter-layer dielectric.
19. The semiconductor device of claim 16, wherein the dielectric layer further includes a porous low-k dielectric material.
20. The semiconductor device of claim 16, wherein the dielectric layer has a carbon content greater than approximately 15% atomic concentration.