1-9. (canceled)
10. A semiconductor device having a package comprising:
as components disposed inside the package, an input terminal and an output terminal for exchanging signals with an external circuit outside the package;
a semiconductor element disposed on a signal transmission path between the input terminal and the output terminal to execute a signal process;
an internal matching circuit board disposed on at least one signal transmission path of an input-side signal transmission path between the input terminal and the semiconductor element and an output-side signal transmission path between the semiconductor element and the output terminal for matching at least between output impedance of an external circuit connected to the input terminal and input impedance of the semiconductor device or between input impedance of an external circuit connected to the output terminal and output impedance of the semiconductor device; and
a plurality of wires electrically connecting components to transmit signals, wherein
the internal matching circuit board includes
an input-side internal matching circuit board disposed on the input-side signal transmission path between the input terminal and the semiconductor element for matching impedance on the input side, and
an output-side internal matching circuit board disposed on the output-side signal transmission path between the semiconductor element and the output terminal for matching impedance on the output side,
the semiconductor element and the input-side internal matching circuit board are disposed in direct or indirect contact inside the package, and
the output-side internal matching circuit board and the output terminal are disposed in direct or indirect contact inside the package.
11. The semiconductor device according to claim 10, wherein
the semiconductor device is configured that impedance of the semiconductor element having a reactance component indicating a negative state equal to or less than zero is converted by inductance of the wires and a matching circuit of the internal matching circuit board and matched with the output impedance of the external circuit connected to the input terminal or the input impedance of the external circuit connected to the output terminal, and wherein
out of the wires converting impedance of the semiconductor element having a reactance component indicating a negative state equal to or less than zero into inductive impedance indicating a positive state, components electrically connected by the wire closest to the semiconductor element are disposed in direct or indirect contact with each other inside the package.
12. The semiconductor device according to claim 12, wherein
the semiconductor device is configured that impedance of the semiconductor element having a reactance component indicating a negative state equal to or less than zero is converted by inductance of the wires and matching circuits of the internal matching circuit boards and matched with the output impedance of the external circuit connected to the input terminal or the input impedance of the external circuit connected to the output terminal, and wherein
out of the internal matching circuit boards converting impedance of the semiconductor element having a reactance component indicating a negative state equal to or less than zero into inductive impedance indicating a positive state, components electrically connected by a wire immediately after conversion into the inductive impedance by the internal matching circuit board closest to the semiconductor element are disposed in direct or indirect contact with each other inside the package.
13. The semiconductor device according to claim 10, wherein
components are electrically connected by at least one wire having a characteristics that a specific value used as an index in high-frequency characteristics of the semiconductor device due to a change in wire length out of the plurality of the wires does not exceed an allowable value at which impedance matching can be achieved between the external circuit and the semiconductor device, and are disposed at a distance from each other inside the package.
14. The semiconductor device according to claim 10, wherein
a transistor chip is included as the semiconductor element, wherein
a gate of the transistor chip is on the input terminal side, and wherein
a drain of the transistor chip is on the output terminal side.
15. The semiconductor device according to claim 10, wherein
an index of the high-frequency characteristics of the semiconductor device is a mismatch loss of impedance at an input end or an output end of the input terminal or at an input end or an output end of the output terminal.
16. The semiconductor device according to claim 10, wherein
an index of the high-frequency characteristics of the semiconductor device is a transmission loss of a signal transmission path between the input terminal and the semiconductor element or between the semiconductor element and the output terminal.
17. The semiconductor device according to claim 10, wherein
an index of the high-frequency characteristics of the semiconductor device is a power gain from the input terminal to the output terminal.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An electrical contact having a metallic contact surface, wherein the electrical contact comprises:
a stainless steel substrate;
an underlying layer comprising at least one selected from the group consisting of nickel, cobalt, nickel alloys, and cobalt alloys, said underlying layer being provided on at least a part of the stainless steel substrate;
an interlayer of copper or a copper alloy, said interlayer having a thickness of 0.05 to 2.0 \u03bcm and being provided on the underlying layer; and
an upper layer of silver or a silver alloy, said upper layer being provided on the interlayer and being positioned at the metallic contact surface of said electrical contact;
wherein said electrical contact is located adjacent to at least two electrical terminals, and said contact is movable between a closed position in which said contact closes an electrical circuit between the terminals and an opened position in which said contact opens said electrical circuit between the terminals, and
wherein a majority of stress applied on said electrical contact when moving between the opened position and the closed position is in a direction perpendicular parallel to the thickness directions of said layers.
2. The electrical contact according to claim 1, wherein said electrical contact is dome-shaped tactile electrical contact.
3. The electrical contact according to claim 2, wherein said electrical contact has a diameter of 4 mm or less.
4. The electrical contact according to claim 2, wherein said electrical contact is tactile push switch.