1. A passivating material suitable for passivating a metal surface, the passivating material comprising:
a polymer comprising:
(a) at least one nitro group, andor pyridine group, andor phenolic hydroxyl group; and
(b) at least one group selected from a phosphorous-containing group andor a carboxylic acid group, wherein the at least one phosphorous-containing group is selected from a phosphate, a phosphite, or a non-nitrogen substituted phosphonate.
2. The passivating material of claim 1, wherein the polymer is selected from or is derived from an acrylic polymer, a polyester polymer, a polyurethane polymer, an epoxy polymer, a polyolefin polymer, a polyether polymer, copolymers thereof, or mixtures thereof.
3. The passivating material of claim 1, wherein the polymer comprises or is derived from an epoxy polymer.
4. The passivating material of claim 1, wherein the polymer is derived from a reaction product of reactants comprising a glycidyl ether of an aromatic alcohol.
5. The passivating material of claim 1, wherein the polymer is derived from a reaction product of reactants comprising a polyglycidyl ether of a polyhydric alcohol.
6. The passivating material of claim 1, wherein the polymer comprises or is derived from an acrylic polymer with glycidyl functionality.
7. The passivating material of claim 1, wherein the phosphorous-containing group is selected from at least one of a phosphate group andor a non-nitrogen substituted phosphonate group.
8. The passivating material of claim 1, wherein the phosphorous-containing group is derived from at least one of phosphoric acid, andor an alkyl, an aryl, andor an alkyl aryl phosphonic acid, or mixtures thereof.
9. The passivating material of claim 8, wherein the phosphorous-containing group includes at least one of acid andor ester functionality.
10. The passivating material of claim 9, wherein the acid functionalities are partially or fully neutralized.
11. The passivating material of claim 1, wherein the nitro group is derived from at least one of an alkyl, an aryl, andor an alkyl aryl nitro group-containing compound.
12. The passivating material of claim 1, wherein the nitro group is derived from an aromatic nitro group-containing compound selected from 2-nitrobenzoic acid, 4-nitrobenzoic acid, 2-4-dinitrobenzoic acid, and mixtures thereof.
13. The passivating material of claim 1, wherein the nitro group is derived from 4-nitrobenzoic acid.
14. The passivating material of claim 1, wherein the polymer comprises the reaction product of reactants comprising:
an aromatic epoxy group-containing compound;
an aromatic nitro compound; and
a phosphorous-containing compound.
15. The passivating material of claim 1, wherein the polymer comprises the reaction product of:
a diglycidyl ether of a polyhydric aromatic alcohol;
a nitro compound selected from the group consisting of 2-nitrobenzoic acid, 4-nitrobenzoic acid, 2-4-dinitrobenzoic acid, and mixtures thereof; and
a phosphorous-containing compound selected from the group of phosphoric acid, an alkyl, an aryl, andor an alkyl aryl phosphonic acid, and mixtures thereof.
16. The passivating material of claim 14, wherein the polymer has an equivalent ratio of epoxy:nitro group:phosphoric acid of 3.80.34.8 to 3.830.8.
17. The passivating material of claim 14, wherein the polymer has an equivalent ratio of epoxy:nitro group:phosphoric acid of 3.80.84.2 to 3.813.2.
18-34. (canceled)
35. A passivating material suitable for passivating a metal surface, the passivating material comprising:
a polymer comprising:
(a) at least one nitro group, andor pyridine group, andor phenolic hydroxyl group; and
(b) at least one group selected from a phosphorous-containing group wherein the at least one phosphorous-containing group is selected from a phosphate, a phosphite, or a non-nitrogen substituted phosphonate.
36. A passivating material suitable for passivating a metal surface, the passivating material comprising:
a polymer comprising:
(a) at least one nitro group; and
(b) at least one group selected from a phosphorous-containing group wherein the at least one phosphorous-containing group is selected from a phosphate, a phosphite, or a non-nitrogen substituted phosphonate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor element, comprising:
an electrically insulating substrate;
a semiconductor layer, including first and second semiconductor layers of different conduction types, formed on said electrically insulating substrate;
a first electrode formed on said first semiconductor layer; and
a second electrode formed on said second semiconductor layer revealed by removing a part of said first semiconductor layer,
wherein said second electrode is formed on an upper surface of said second semiconductor layer, and
wherein a die-bonding electrode is formed on a side surface of said second electrode, a side surface of said second semiconductor layer, and a side surface of said electrically insulating substrate.
2. A semiconductor element according to claim 1, wherein
said second electrode is formed in a circumference around said second semiconductor layer, and
said die-bonding electrode covers a circumference including said side surface of said second electrode, said side surface of said second semiconductor layer, and said side surface of said electrically insulating substrate.
3. A semiconductor element according to claim 1, wherein said die-bonding electrode extends to cover a rear surface of said electrically insulating substrate.
4. A semiconductor element according to claim 1, wherein said semiconductor layer includes a Group III nitride compound semiconductor and a light-emitting layer.
5. A semiconductor element according to claim 1, wherein a light-emitting layer is interposed between said first semiconductor layer and said second semiconductor layer.
6. A semiconductor element, comprising:
an electrically insulating substrate;
a semiconductor layer, including first and second semiconductor layers of different conduction types, formed on said electrically insulating substrate;
a first electrode formed on said first semiconductor layer; and
a second electrode formed on said second semiconductor layer revealed by removing a part of said first semiconductor layer,
wherein a die-bonding electrode is formed on a side surface of said second electrode, a side surface of said second semiconductor layer, and a side surface of said electrically insulating substrate, and
wherein said die-bonding electrode is formed on an upper surface of said second electrode.
7. A semiconductor element according to claim 1, wherein said second electrode comprises an electrically conductive material.
8. A semiconductor element according to claim 7, wherein said second electrode comprises at least one of a metal and a metal alloy.
9. A semiconductor element according to claim 1, wherein said die-bonding electrode comprises an electrically conductive material.
10. A semiconductor element according to claim 9, wherein said die-bonding electrode comprises at least one of a metal and a metal alloy.
11. A semiconductor element according to claim 1, wherein said second electrode and said die-bonding electrode comprise the same material.
12. A semiconductor element, comprising:
an electrically insulating substrate;
a first semiconductor layer of a first conduction type formed on said electrically insulating substrate;
a first electrode formed on an upper surface of said first semiconductor layer; and
a die-bonding electrode formed on a side surface of said first electrode, a side surface of said first semiconductor layer, and a side surface of said electrically insulating substrate,
wherein said first electrode and said die-bonding electrode comprise the same electrically conductive material.
13. A semiconductor element according to claim 12, further comprising:
a second semiconductor layer of a second conduction type formed on a part of said first semiconductor layer other than where said first electrode is formed.
14. A semiconductor element according to claim 12, wherein said first electrode is formed in a circumference around said first semiconductor layer.
15. A semiconductor element according to claim 14, wherein said die-bonding electrode is formed as a circumference that covers said side surface of said first electrode, said side surface of said first semiconductor layer, and said side surface of said electrically insulating substrate.
16. A semiconductor element according to claim 13, further comprising:
a light-emitting layer interposed between said first semiconductor layer and said second semiconductor layer.
17. A semiconductor element according to claim 12, wherein said die-bonding electrode extends to cover a rear surface of said electrically insulating substrate.
18. A semiconductor element, comprising:
an electrically insulating substrate;
a semiconductor layer, including first and second semiconductor layers of different conduction types, formed on said electrically insulating substrate;
a first electrode formed on said first semiconductor layer; and
a second electrode formed on said second semiconductor layer revealed by removing a part of said first semiconductor layer,
wherein a die-bonding electrode is formed on a side surface of said second electrode, a side surface of said second semiconductor layer, and a side surface of said electrically insulating substrate, and
wherein said second electrode is formed on an upper surface of said second semiconductor layer revealed by removing a part of said first semiconductor layer.
19. A semiconductor element according to claim 1, wherein metal\u2014metal contact is formed between said die-bonding electrode and said second electrode.
20. A semiconductor element according to claim 19, wherein ohmic contact is securable between said die-bonding electrode and said second electrode.
21. A semiconductor element according to claim 12, wherein metal\u2014metal contact is formed between said die-bonding electrode and said first electrode.
22. A semiconductor element according to claim 21, wherein ohmic contact is securable between said die-bonding electrode and said first electrode.