What is claimed is:
1. A filter element comprising pleated filter media having a plurality of pleats in a closed loop having an outer perimeter defined by a plurality of outer pleat tips, and an inner perimeter defined by a plurality of inner pleat tips, said loop having a hollow interior extending along a given axis, wherein fluid to be filtered flows laterally through said filter media, and flows axially in said hollow interior, said filter element having an axial flow passage extending along said axis and circumscribing said hollow interior and having a flow perimeter greater than said inner perimeter, said filter element having first and second axial ends, said first axial end being open and providing said axial flow passage therethrough, and an end cap around said outer pleat tips at said first axial end and having an outer perimeter greater than said outer perimeter of said outer pleat tips and forming an outer sealing surface external to said axial flow passage.
2. The invention according to claim 1 wherein said outer sealing surface faces away from said axial flow passage and radially outwardly relative to said axis.
3. The invention according to claim 1 wherein said end cap has an inner perimeter substantially equal to said outer perimeter of said outer pleat tips.
4. The invention according to claim 1 comprising an outer support liner around said filter element at said outer pleat tips, and wherein said end cap encapsulates said outer pleat tips and said outer support liner, said end cap having a major margin extending radially outwardly away from said outer support liner to said outer perimeter of said end cap.
5. The invention according to claim 4 wherein said end cap has a minor margin extending radially inwardly from said outer support liner to the inner perimeter of said end cap, said minor margin encapsulating said outer pleat tips.
6. The invention according to claim 5 wherein the radial extension of said major margin is longer than the radial extension of said minor margin.
7. The invention according to claim 6 wherein the radial extension of said major margin is substantially longer than the radial extension of said minor margin, and wherein said inner perimeter of said end cap is substantially equal to said outer perimeter of said outer pleat tips, the difference being the length of said radial extension of said minor margin.
8. The invention according to claim 1 wherein said inner perimeter of said inner pleat tips defines and bounds a first cross-sectional area, said end cap has an inner perimeter defining said flow perimeter, said inner perimeter of said end cap defines and bounds a second cross-sectional area, said outer perimeter of said outer pleat tips defines and bounds a third cross-sectional area, and wherein the difference between said first and second cross-sectional areas is substantially greater than the difference between said second and third cross-sectional areas.
9. The invention according to claim 1 comprising a second end cap at said second axial end of said filter element completely covering the axial ends of said pleats including said outer pleat tips and said inner pleat tips at said second axial end.
10. The invention according to claim 9 wherein said second end cap also spans and completely covers said hollow interior at said second axial end of said filter element.
11. The invention according to claim 1 wherein said fluid to be filtered flows laterally inwardly through said filter media from said outer perimeter of said outer pleat tips to said inner perimeter of said inner pleat tips and then flows axially in said hollow interior, wherein said flow passage is an outlet flow passage.
12. The invention according to claim 1 wherein said fluid to be filtered flows axially in said hollow interior and then flows laterally outwardly through said filter media from said inner perimeter of said inner pleat tips to said outer perimeter of said outer pleat tips, wherein said flow passage is an inlet flow passage.
13. The invention according to claim 1 wherein said closed loop is annular.
14. The invention according to claim 1 comprising a support extension member in said end cap, said support extension member having a first leg at said outer pleat tips, a second leg extending radially outwardly from said first leg, and a third leg at the outer end of said second leg, said third leg providing a support backing for compression of a sealing portion of said end cap thereagainst, said sealing portion being between said third leg and said outer sealing surface and spaced radially outwardly of said outer pleat tips by a radial gap between said first and third legs.
15. The invention according to claim 14 wherein said second leg has first and second sides facing axially in opposite directions and defining, in combination with said first and third legs, said radial gap, and wherein said end cap has a first portion in said radial gap, and a second portion radially outwardly thereof and providing said sealing portion.
16. The invention according to claim 15 wherein said second side of said second leg faces an open radial gap between said outer pleat tips and said second portion of said end cap, said open radial gap being unfilled by said end cap.
17. The invention according to claim 14 wherein said first, second and third legs define a U-shaped said support extension member, said second leg being the bight of the U, said first and third legs extending axially and generally parallel to one another.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method comprising:
forming a dielectric including HfLnON, the dielectric formed on a substrate of an electronic device.
2. The method of claim 1, wherein the method includes forming a metal electrode on and contacting the dielectric.
3. The method of claim 2, wherein forming a metal electrode includes forming the metal electrode by substituting a desired metal material for previously disposed substitutable material.
4. The method of claim 2, wherein forming a metal electrode includes forming a self aligned metal electrode on and contacting the dielectric.
5. A method comprising:
forming a dielectric including HfLnON, wherein forming the HfLnON includes forming an intermediate composition having at least two elements of HfLnON and processing the intermediate composition to form the HfLnON, the forming of the intermediate composition includes using a self-limiting monolayer or partial monolayer sequencing process.
6. The method of claim 5, wherein forming the HfLnON includes forming HfLnO using the self-limiting monolayer or partial monolayer sequencing process and nitridizing the HfLnO to form HfLnON.
7. The method of claim 6, wherein forming HfLnO includes:
forming hafnium oxide by the self-limiting monolayer or partial monolayer sequencing process;
forming lanthanide oxide by the self-limiting monolayer or partial monolayer sequencing process; and
annealing the hafnium oxide with the lanthanide oxide to form HfLnO.
8. The method of claim 5, wherein forming the HfLnON includes:
forming HfN by the self-limiting monolayer or partial monolayer sequencing process;
forming LnN by the self-limiting monolayer or partial monolayer sequencing process; and
oxidizing the HfN and LnN to form HfLnON.
9. The method of claim 5, wherein forming the HfLnON includes:
forming HfON by the self-limiting monolayer or partial monolayer sequencing process;
forming LnON by the self-limiting monolayer or partial monolayer sequencing process; and
annealing the HfON with the LnON to form HfLnON.
10. The method of claim 5, wherein the method includes forming a metal electrode on and contacting the dielectric, the metal electrode formed by forming substitutable material on the dielectric, the substitutable material including one or more materials selected from the group consisting of carbon, polysilicon, germanium, and silicon-germanium, and substituting a desired metal material for the substitutable material to provide the metal electrode on the dielectric.
11. The method of claim 5, wherein the method includes forming a self aligned metal electrode on and contacting the dielectric using a previously disposed sacrificial carbon on the dielectric and sacrificial carbon sidewall spacers adjacent to the sacrificial carbon.
12. A method comprising:
forming an array of memory cells on a substrate, each memory cell including a dielectric containing HfLnON.
13. The method of claim 12, wherein the method includes forming the HfLnON using a self-limiting monolayer or partial monolayer sequencing process.
14. The method of claim 13, wherein the method includes:
forming HfLnO by the self-limiting monolayer or partial monolayer sequencing process; and
nitridizing the HfLnO to form HfLnON.
15. The method of claim 13, wherein the method includes:
forming HfN by the self-limiting monolayer or partial monolayer sequencing process;
forming LnN by the self-limiting monolayer or partial monolayer sequencing process;
annealing the HfN with the LnN; and
oxidizing the HfN and the LnN to form HfLnON.
16. The method of claim 13, wherein the method includes:
forming HfON by the self-limiting monolayer or partial monolayer sequencing process;
forming LnON by the self-limiting monolayer or partial monolayer sequencing process; and
annealing the HfON with the LnON to form HfLnON.
17. The method of claim 12, wherein the method includes forming a metal electrode on and contacting the dielectric, forming the metal electrode including:
forming a layer of substitutable material on the dielectric; and
substituting a desired metal material for the substitutable material to provide the metal electrode on the dielectric.
18. An electronic device comprising:
a substrate; and
a dielectric disposed on the substrate, the dielectric containing HfLnON.
19. The electronic device of claim 18, wherein the HfLnON is arranged as a layered structure of one or more monolayers.
20. The electronic device of claim 18, wherein the HfLnON includes HfLaON.
21. The electronic device of claim 18, wherein the dielectric includes dielectric material other than HfLnON.
22. The electronic device of claim 21, wherein the dielectric material includes a metal oxide.
23. The electronic device of claim 18, wherein the dielectric is structured as a nanolaminate.
24. The electronic device of claim 18, wherein the dielectric is disposed in a memory.