1. A method of characterizing an optic nerve head, the method comprising the steps of:
a) acquiring a topographic image of the optic nerve head;
b) defining a topographic model fitted to the topographic image of the optic nerve head about a centre of analysis, wherein the centre of analysis is identified on the optic nerve head, and wherein the topographic model is defined using model morphological parameters and comprises a parabolic surface;
c) applying the topographic model to identify a cup region on the topographic image of the optic nerve head by comparing the acquired topographic image to the parabolic surface, wherein the cup region comprises the centre of analysis of the optic nerve head;
d) excluding the cup region from the acquired image and refitting the parabolic surface to the acquired image; and
e) modeling the shape of the cup superimposed on the model parabolic surface, to define the topographic model of the optic nerve head.
2. The method of claim 1, wherein the topographic model is fitted to the topographic image by applying the formula:
f
=
{
1
N
\u2062
\u2211
i
,
j
allpixels
\u2062
\u2062
\u03b3
\u2062
\u2062
I
\u2061
(
i
,
j
)
–
z
\u2061
(
\u03b1
\u2062
\u2062
i
,
\u03b2
\u2062
\u2062
j
)
2
}
1
2
wherein:
I (i, j) is the value of the image at pixel (i, j);
N is the total number of pixels in the image; and
\u03b1, \u03b2 and \u03b3 are constants that may be used to adjust scales.
3. The method of claim 1, further comprising comparing one or more of the model morphological parameters to one or more corresponding predetermined morphological parameters obtained from one or more control topographic images.
4. The method of claim 1, wherein the model morphological parameters are used to calculate one or more model morphological indices for comparison to one or more corresponding predetermined morphological indices obtained from one or more control topographic images.
5. The method of claim 4 wherein the model morphological indices are selected from the group consisting of: horizontal Image curvature; vertical image curvature; nasotemporal slant; fit of the model to the image; cup gradient measure; cup gradient measure temporal; cup gradient measure nasal; fit of parabolic function; e (degree of cup elongation); and, theta (angle of elongation).
6. The method of claim 1, wherein the method is implemented in a computer.
7. The method of claim 1 wherein the topographic model comprises applying the formula:
z
\u2061
(
x
,
y
)
=
z
m
1
+
\u2147
(
r
–
r
0
)
s
+
a
\u2061
(
x
–
x
0
)
+
b
\u2061
(
y
–
y
0
)
+
c
\u2061
(
x
–
x
0
)
2
+
d
\u2061
(
y
–
y
0
)
2
+
z
0
where r=\u221a{square root over ((x\u2212x0)2+(y\u2212y0)2)}{square root over ((x\u2212x0)2+(y\u2212y0)2)}
wherein the depth of a surface, z, is defined as a function of position (x, y) on the surface, the surface being centered on position (x0, y0); and,
\u03b1 is a parameter defining an optic nerve head slant in the x direction;
b is a parameter defining an optic nerve head slant in the y direction;
c is a parameter defining an optic nerve head curvature in the x direction;
d is a parameter defining an optic nerve head curvature in the y direction;
z0 is a parameter defining a constant surface offset in the z direction;
s is a parameter defining a cup slope;
zm is a parameter defining a cup depth; and,
r is a parameter defining a cup width.
8. A method of characterizing an optic nerve head, the method comprising the steps of:
a) acquiring a topographic image of the optic nerve head;
b) defining a topographic model fitted to the topographic image of the optic nerve head about a centre of analysis, wherein the centre of analysis is identified on the optic nerve head, and wherein the topographic model is defined using model morphological parameters and comprises a parabolic surface;
c) applying the topographic model to identify a cup region on the topographic image of the optic nerve head by comparing the acquired topographic image to the parabolic surface, wherein the cup region comprises the centre of analysis of the optic nerve head;
wherein the topographic model comprises applying the formula:
z
\u2061
(
x
,
y
)
=
z
m
1
+
\u2147
(
r
–
r
0
)
s
+
a
\u2061
(
x
–
x
0
)
+
b
\u2061
(
y
–
y
0
)
+
c
\u2061
(
x
–
x
0
)
2
+
d
\u2061
(
y
–
y
0
)
2
+
z
0
where r=\u221a{square root over ((x\u2212x0)2+(y\u2212y0)2)}{square root over ((x\u2212x0)2+(y\u2212y0)2)}
wherein the depth of a surface, z, is defined as a function of position (x, y) on the surface, the surface being centered on position (x0, y0); and,
\u03b1 is a parameter defining an optic nerve head slant in the x direction;
b is a parameter defining an optic nerve head slant in the y direction;
c is a parameter defining an optic nerve head curvature in the x direction;
d is a parameter defining an optic nerve head curvature in the y direction;
z0 is a parameter defining a constant surface offset in the z direction;
s is a parameter defining a cup slope;
zm is a parameter defining a cup depth; and,
r is a parameter defining a cup width.
9. The method of claim 8, further comprising the steps of:
a) excluding the cup region from the acquired image and refitting the parabolic surface to the acquired image; and
b) modeling the shape of the cup superimposed on the model parabolic surface, to define the topographic model of the optic nerve head.
10. The method of claim 8, further comprising calculating a least-squares fit of the parabolic surface to the acquired image by adjusting parameters \u03b1, b, CJ d and z0.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device, comprising:
an NMOS transistor formed under a pad,
the NMOS transistor comprising:
a diffusion region for a source and a diffusion region for a drain, each alternately arranged;
a gate electrode disposed above each channel between the source and the drain; and
a P-type diffusion region for fixing a substrate potential, the P-type diffusion region surrounding the diffusion region for the source, the diffusion region for the drain, and the gate electrode,
the NMOS transistor having an even number of the channels;
a first lower metal film formed on the drain, for establishing an electrical connection to the drain;
a second lower metal film for electrically connecting the source and the gate electrode to the P-type diffusion region;
an intermediate metal film electrically connected to the first lower metal film through a first via, the intermediate metal film having a rectangular ring shape and including an opening under the pad;
an upper metal film that forms the pad, the upper metal film being formed on the intermediate metal film and electrically connected to the intermediate metal film through a second via; and
a protective film including a pad opening that is aligned with the opening,
the first vias being formed only on one side of the intermediate metal film and on another side thereof opposed to the one side,
the diffusion region for the source and the diffusion region for the drain being formed symmetrically about a straight line in a channel width direction of the NMOS transistor.
2. A semiconductor device according to claim 1, wherein the NMOS transistor comprises the diffusion regions for the source as diffusion regions at both ends in a gate length direction.
3. A semiconductor device according to claim 1, wherein the NMOS transistor comprises the diffusion regions for the drain as diffusion regions at both ends in a gate length direction.
4. A semiconductor device according to claim 2, wherein the NMOS transistor further comprises a P-type diffusion region for fixing the substrate potential, the P-type diffusion region being located at a center of the NMOS transistor and sandwiched on both sides by the diffusion regions for the source.