What is claimed is:
1. A probe for the electrosurgical treatment of tissues comprising a tubular supply device to guide a noble gas from a noble-gas source to a distal end of the supply device; and an electrode comprising a discharge portion and an electrical lead which can conduct a HF current from a HF source to the discharge portion, the discharge portion being formed as a flat structure that is disposed in the supply device such that the noble gas can flow over a substantial portion of its surface area to conduct away heat.
2. A probe according to claim 1, wherein the discharge portion defines at least one sharp tip or edge that points toward the distal end of the supply device.
3. A probe according to claim 1, wherein the discharge portion comprises a lamina that is dimensioned such that edges of the lamina are in fixating engagement with an inner wall of the supply device.
4. A probe according to claim 1, wherein the supply device and its distal end are integrally made from a plastics material.
5. A probe according to claim 1, wherein the electrical lead comprises a wire and the discharge portion is made of sheet metal, the wire and the discharge portion being connected by spot-welding at at least one site.
6. A probe according to claim 1, wherein the discharge portion is twisted to define a screw shape.
7. A probe according to claim 1, wherein the discharge portion defines multiple sharp tips.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A high-pressure processing apparatus for performing a film formation process on a target object, while using a process fluid containing a high-pressure fluid and a film formation source material, the apparatus comprising:
a pressure tight container defining a process field for accommodating the target object, and configured to withstand a pressure applied from the high-pressure fluid, the pressure tight container being made of a first material;
a support member disposed inside the pressure tight container to support the target object;
a fluid supply system configured to supply the process fluid onto the target object; and
a thermally shielding layer disposed to cover a surface of the pressure tight container defining the process field, the thermally shielding layer being made of a second material having a thermal conductivity higher than that of the first material.
2. The apparatus according to claim 1, wherein the fluid supply system is configured to supply a supercritical fluid as the high-pressure fluid.
3. The apparatus according to claim 1, wherein the second material contains as a main component a material selected from the group consisting of aluminum, copper, molybdenum, tungsten, nitride aluminum, and silicon carbide.
4. The apparatus according to claim 1, wherein the apparatus further comprises a temperature adjusting mechanism configured to adjust a temperature of the thermally shielding layer.
5. The apparatus according to claim 4, wherein the temperature adjusting mechanism comprises a temperature sensor and at least one of a heater and a cooler to be controlled with reference to a result detected by the temperature sensor.
6. The apparatus according to claim 1, wherein the apparatus further comprises a heat insulating layer interposed between the thermally shielding layer and the inner wall of the pressure tight container, and the heat insulating layer is made of a third material having a thermal conductivity lower than that of the first material.
7. The apparatus according to claim 6, wherein the apparatus further comprises a cooler interposed between the heat insulating layer and the pressure tight container.
8. The apparatus according to claim 1, wherein the thermally shielding layer is disposed to face the target object supported by the support member over an entire surface thereof to be processed.
9. The apparatus according to claim 1, wherein the thermally shielding layer is disposed to cover substantially entirely an upper inner surface of the pressure tight container.
10. The apparatus according to claim 9, wherein the thermally shielding layer includes a sidewall portion extending downward from an entire periphery thereof to cover a side surface of the pressure tight container.
11. The apparatus according to claim 10, wherein the sidewall portion has a bottom end set to substantially reach a floor of the film formation process.
12. The apparatus according to claim 10, wherein the fluid supply system is arranged such that the process fluid flows through an opening located at a bottom end of the sidewall portion and is then supplied onto the target object supported by the support member.
13. The apparatus according to claim 9, wherein the fluid supply system comprises a fluid supply head formed behind the thermally shielding layer, and a plurality of spouting holes formed in the thermally shielding layer and communicating with the fluid supply head.
14. The apparatus according to claim 1, wherein the second material has a thermal conductivity of higher than 100 WmK at 100\xb0 C.
15. The apparatus according to claim 6, wherein the third material has a thermal conductivity of lower than 10 WmK at 100\xb0 C.
16. The apparatus according to claim 1, wherein the first material has a thermal conductivity of 10 to 100 WmK at 100\xb0 C.
17. A high-pressure processing apparatus for performing a film formation process on a target object, while using a process fluid containing a high-pressure fluid and a film formation source material, the apparatus comprising:
a pressure tight container defining a process field for accommodating the target object, and configured to withstand a pressure applied from the high-pressure fluid, the pressure tight container being made of a first material having a thermal conductivity of 10 to 100 WmK at 100\xb0 C.;
a support member disposed inside the pressure tight container to support the target object;
a fluid supply system configured to supply the process fluid onto the target object; and
a thermally shielding layer disposed to cover a surface of the pressure tight container defining the process field, the thermally shielding layer being made of a second material having a thermal conductivity of higher than 100 WmK at 100\xb0 C.,
wherein the thermally shielding layer is disposed to cover substantially entirely an upper inner surface of the pressure tight container, and includes a sidewall portion extending downward from an entire periphery thereof to cover a side surface of the pressure tight container, and
wherein the fluid supply system is arranged such that the process fluid flows through an opening located at a bottom end of the sidewall portion and is then supplied onto the target object supported by the support member.
18. The apparatus according to claim 17, wherein the fluid supply system is configured to supply a supercritical fluid as the high-pressure fluid.
19. A high-pressure processing apparatus for performing a film formation process on a target object, while using a process fluid containing a high-pressure fluid and a film formation source material, the apparatus comprising:
a pressure tight container defining a process field for accommodating the target object, and configured to withstand a pressure applied from the high-pressure fluid, the pressure tight container being made of a first material having a thermal conductivity of 10 to 100 WmK at 100\xb0 C.;
a support member disposed inside the pressure tight container to support the target object;
a fluid supply system configured to supply the process fluid onto the target object; and
a thermally shielding layer disposed to cover a surface of the pressure tight container defining the process field, the thermally shielding layer being made of a second material having a thermal conductivity of higher than 100 WmK at 10\xb0 C.,
wherein the thermally shielding layer is disposed to cover substantially entirely an upper inner surface of the pressure tight container, and
wherein the fluid supply system comprises a fluid supply head formed behind the thermally shielding layer, and a plurality of spouting holes formed in the thermally shielding layer and communicating with the fluid supply head.
20. The apparatus according to claim 19, wherein the fluid supply system is configured to supply a supercritical fluid as the high-pressure fluid.