1. A layer arrangement comprising:
a getter layer provided on a support substrate; and
a sacrificial layer disposed substantially over the getter layer;
wherein the sacrificial layer has a negative Gibbs free energy of formation of oxide higher than the getter layer.
2. The layer arrangement of claim 1,
wherein the getter layer comprises a material selected from a group consisting of titanium, yttrium, vanadium, tantalum, niobium and hafnium.
3. The layer arrangement of claim 1,
wherein the sacrificial layer comprises a material selected from a group consisting of nickel, copper, zinc, aluminum, iron and germanium.
4. The layer arrangement of claim 1, wherein the getter layer comprises a thickness less than 25 \u03bcm, the sacrificial layer comprises a thickness less than 2 \u03bcm, and wherein the ratio of the thickness of the sacrificial layer relative to the getter layer is in the range of 0.01 to 0.5.
5. (canceled)
6. (canceled)
7. The layer arrangement of claim 1, further comprising a base layer beneath the getter layer, the base layer capable for averting a re-outgassing of argon.
8. The layer arrangement of claim 7, wherein the base layer comprises a material of higher density than the getter layer, and wherein the base layer comprises a material selected from a group consisting of nickel, tungsten, copper, chromium, cobalt, silver, platinum, palladium and iron.
9. (canceled)
10. A wafer level package comprising
a support substrate;
a layer arrangement disposed on the support substrate, the layer arrangement comprising:
a getter layer;
a sacrificial layer disposed substantially over a surface of the getter layer;
wherein the sacrificial layer has a negative Gibbs free energy of formation of oxide higher than the getter layer; and
a capping layer disposed over the support substrate so as to enclose the layer arrangement there within.
11. The wafer level package of claim 10, wherein the support substrate comprises a cavity formed there within, and wherein the layer arrangement is disposed within the cavity.
12. (canceled)
13. The wafer level package of claim 12, wherein the layer arrangement is disposed in contact with one or more of surfaces of the support substrate, the capping layer, and sidewalls of the cavity.
14. The wafer level package of claim 10, wherein the support substrate comprises a substrate selected from a group consisting of a silicon substrate, a ceramic substrate with metallization, and a ceramic substrate without metallization.
15. The wafer level package of claim 10, wherein the capping layer comprises a material selected from a group consisting of glass, glass-ceramic, silicon, ceramic with metallization and ceramic without metallization.
16. The wafer level package of claim 10, wherein the capping layer is bonded to the support substrate.
17. A method of forming a layer arrangement, the method comprising:
depositing a getter layer on a support substrate; and
depositing a sacrificial layer substantially over the getter layer;
wherein the sacrificial layer has a negative Gibbs free energy of formation of oxide higher than the getter layer.
18. The method of claim 17, further comprising introducing argon when depositing the getter layer.
19. The method of claim 17, wherein depositing the getter layer comprises depositing by sputtering or evaporation.
20. The method of claim 17, wherein depositing the getter layer is optimized by varying one or a combination of the deposition parameters selected from the group consisting of substrate temperature, pressure of the argon sputtering gas, deposition time, dc sputtering power and glancing angle.
21. The method of claim 20, wherein depositing the getter layer is optimized by varying a combination of the deposition parameters of pressure of the argon sputtering gas and dc sputtering power.
22. The method of claim 17, further comprising baking the getter layer and the sacrificial layer before activation of the getter layer to facilitate the outgassing of argon, and wherein the baking temperature is in the range of 150\xb0 C. to 250\xb0 C.
23. (canceled)
24. The method of claim 17, further comprising depositing a base layer beneath the getter layer, the base layer capable for averting the re-outgassing of inert gas.
25. (canceled)
26. The layer arrangement of claim 1, wherein the getter layer comprises titanium and the sacrificial layer comprises any one of nickel or germanium.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
I claim:
1. A sealed crustless sandwich, comprising:
a first bread layer having an first perimeter and a contact surface;
at least one filling juxtaposed to said contact surface;
a second bread layer juxtaposed to said at least one filling opposite of said first bread layer, wherein said second bread layer includes a second perimeter similar to said first perimeter;
a crimped edge comprised of said first perimeter and said second perimeter for sealing said at least one filling between said first bread layer and said second bread layer;
wherein a crust portion of said first bread layer and said second bread layer has been removed.
2. The sealed crustless sandwich of claim 1, wherein said crimped edge includes a plurality of spaced apart depressions for increasing a bond of said crimped edge.
3. The sealed crustless sandwich of claim 2, wherein said crimped edge is a finite distance from said at least one filling for increasing said bond.
4. The sealed crustless sandwich of claim 3, wherein said at least one filling comprises:
a first filling;
a second filling;
a third filling; and
wherein said second filling is completely surrounded by said first filling and said third filling for preventing said second filling from engaging said first bread layer and said second bread layer.
5. The sealed crustless sandwich of claim 4, wherein said first filling and third filling have sealing characteristics.
6. The sealed crustless sandwich of claim 5, wherein:
said first filling is juxtaposed to said first bread layer;
said third filling is juxtaposed to said second bread layer; and
an outer edge of said first filling and said third filling are engaged to one another to form a reservoir for retaining said second filling in between.
7. The sealed crustless sandwich of claim 6, wherein said first filling and said third filling are comprised of peanut butter; and said second filling is comprised of a jelly.
8. The sealed crustless sandwich of claim 7, wherein said crimped edge is formed into a substantially circular shape.
9. A method of creating a sealed crustless sandwich, said method comprising the steps of:
(a) providing a first layer of bread and a second layer of bread both having an edge crust;
(b) applying at least one filling onto said first layer of bread;
(c) positioning said second layer of bread onto said at least one filling opposite of said first layer of bread;
(d) cutting through said second layer of bread and through said first layer of bread surrounding said at least one filling and within said edge crust forming a corresponding pair of crustless bread; and
(e) crimping said pair of crustless bread about an outer perimeter for sealing said at least one filling in between.
10. The method of creating said sealed crustless sandwich of claim 9, wherein said at least one filling comprises:
a first filling;
a second filling; and
a third filling, wherein said first filling and said second filling sealably surround said second filling.
11. The method of creating said sealed crustless sandwich of claim 10, wherein said first filling and said third filling are comprised of peanut butter.
12. The method of creating said sealed crustless sandwich of claim 11, wherein said second filling is comprised of jelly.