1. A method for increasing the hydrogen content of water by reacting magnesium particles with EH-101 solution within a closed container that is placed into the water; the said container comprising a material that allows for the selective passage of hydrogen into the water, while preventing magnesium or the EH-101 components present within the container from entering into the water.
2. The method of claim 1 in which the container is constructed from a membrane suitable for the reverse osmosis of water because of its ability to block the passage of EH-101 components while allowing for the passage of hydrogen.
3. The method of claim 1 in which the container is constructed from a low density plastic membrane, such as polyvinylidene chloride (PVDC or Saran wrap) that has the ability to block the passage of EH-101 components while allowing for the passage of hydrogen.
4. The method of claim 1 in which the container is constructed from a low molecular weight cutoff dialysis membrane that has the ability to block the passage of EH-101 components while allowing for the passage of hydrogen.
5. The method of claim 1 in which the solution used to generate hydrogen in the presence of magnesium particles is HB-101, rather than EH-101.
6. The method of claim 1 in which the solution used to generate hydrogen in the presence of magnesium particles comprises other organic compounds within the chemical categories of terpenes, terpenoids and phenolics, as derived from plants.
7. The method of claim 1 in which the EH-101 is packaged into a breakable inner compartment within the hydrogen permeable container, such that the inner compartment maintains separation of the EH-101 from the magnesium particles until the inner compartment is broken by squeezing, which is performed just prior to placing the hydrogen permeable container into the water.
8. The method of claim 1 in which the magnesium particles are in the form of metal shavings
9. The method of claim 1 in which the magnesium particles are in the form of a metallic powder.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A reference pH sensor with an extended gate field effect transistor structure, comprising:
a metal oxide semiconductor field effect transistor (MOSFET);
an extended gate as a sensing unit, comprising a substrate, a solid-state conductive layer thereon, and a polypyrrole layer immobilized on the conductive layer;
a conductive wire connecting the MOSFET and the sensing unit.
2. The reference pH sensor as claimed in claim 1, wherein the MOSFET is n-type.
3. The reference pH sensor as claimed in claim 1, wherein the conductive wire connects the gate of the MOSFET and the sensing unit.
4. The reference pH sensor as claimed in claim 1, wherein the substrate is silicon, glass, ceramic, or plastic.
5. The reference pH sensor as claimed in claim 1, wherein the substrate is silicon.
6. The reference pH sensor as claimed in claim 1, wherein the solid-state conductive layer is ruthenium oxide (RuOx).
7. The reference pH sensor as claimed in claim 1, further comprising an insulating layer covered on the sensing unit.
8. The reference pH sensor as claimed in claim 7, wherein the insulating layer is epoxy resin.
9. A preparation method of a reference pH sensor which is an extended gate ion-sensitive field effect transistor structure, the method comprising the steps of:
providing an extended gate ion sensitive field effect transistor comprising an extended gate region;
forming a solid-state conductive layer on the extended gate region;
forming a polypyrrole layer on the solid-state conductive layer by electrochemical polymerization; and
packaging the extended gate region with an insulating layer.
10. The preparation method as claimed in claim 9, wherein the substrate is silicon, glass, ceramic, or plastic.
11. The preparation method as claimed in claim 10, wherein the substrate is silicon.
12. The preparation method as claimed in claim 9, wherein the solid-state conductive layer is ruthenium oxide.
13. The preparation method as claimed in claim 9, wherein the electro-polymerization comprises the steps of:
immersing the extended gate region in an electro-polymerizing solution;
connecting the extended gate region to a positive electrode of a power supply;
connecting a platinum electrode to a negative electrode of the power supply; and
providing a constant potential from the power supply to perform the electrochemical polymerization.
14. The preparation method as claimed in claim 13, wherein the electro-polymerizing solution comprises phosphate, potassium chloride, and pyrrole.
15. The preparation method as claimed in claim 14, wherein the ratio of phosphate, potassium chloride, and pyrrole is 0.1M:0.01M:0.15\u02dc0.5M.
16. The preparation method as claimed in claim 15, wherein the ratio of phosphate, potassium chloride, and pyrrole is 0.1M:0.01M:0.3\u02dc0.5M.
17. The preparation method as claimed in claim 15, wherein the ratio of phosphate, potassium chloride, and pyrrole is 0.1 M:0.01 M:0.3M.
18. The preparation method as claimed in claim 13, wherein the constant potential is 4V.
19. The preparation method as claimed in claim 9, wherein the MOSFET is n-type.
20. The preparation method as claimed in claim 9, wherein the insulating layer is epoxy resin.
21. A system of measuring pH value in a solution, comprising
a first pH sensor which is an extended gate field effect transistor structure, comprising:
a first metal oxide semiconductor field effect transistor (MOSFET);
a first extended gate as a first sensing unit, comprising a first substrate, and a first solid-state conductive layer thereon; and
a first conductive wire connecting the first MOSFET and the first sensing unit.
a second pH sensor as a reference pH sensor supplying stable voltage, comprising:
a second metal oxide semiconductor field effect transistor (MOSFET);
a second extended gate as a second sensing unit, comprising a second substrate, a second solid-state conductive layer thereon, and a polypyrrole layer on the second solid-state conductive layer; and
a second conductive wire connecting the second MOSFET and the second sensing unit;
a semiconductor characteristic instrument connecting the pH sensor and the reference electrode respectively;
a temperature controller comprising a temperature control center, a thermocouple, and a heater, wherein the temperature control center connects the thermocouple and the heater, respectively; and
a light-isolation container isolating the sensing unit of the pH sensor from photosensitive effect;
wherein measurement of pH value of a solution comprising:
pouring a solution into the light-isolation container;
immersing the sensing unit of the first and the second pH sensors, and the thermocouple in the solution;
adjusting temperature of the solution by the heater controlled by the temperature control center after detecting temperature variation in the solution by the thermocouple;
transmitting measurement data from the first and the second pH sensors to the semiconductor characteristic instrument; and
reading out current-voltage (I-V) values of the solution by the semiconductor characteristic instrument to obtain pH value of the solution.
22. The system as claimed in claim 21, wherein the first and the second MOSFETs are n-type.
23. The system as claimed in claim 21, wherein the first and the second substrates are silicon.
24. The system as claimed in claim 21, wherein the first and the second solid-state conductive layers are ruthenium oxide.
25. The system as claimed in claim 21, wherein the first and the second sensing units further comprises an insulating layer covered on the sensing units.
26. The system as claimed in claim 25, wherein the insulating layer is epoxy resin.
27. The system as claimed in claim 21, wherein the semiconductor characteristic instrument is Keithley 236.
28. The system as claimed in claim 21, wherein the light-isolation container is a dark box.