1. A nonvolatile memory device, comprising:
a memory cell array including a plurality of cell strings formed in a direction perpendicular to a substrate layer, each of the plurality of cell strings is connected between the substrate layer and a corresponding bit line, wherein each of the plurality of cell strings comprises,
at least one string selection transistor connected to a string selection line,
a plurality of cell transistors, each of the plurality of cell transistors connected in common with a word line of a corresponding layer, and
at least one ground selection transistor connected to a ground selection line for connecting the plurality of cell transistors to the substrate layer; and
a decoder configured to drive at least one of the string selection line and the ground selection line in at least two directions.
2. The nonvolatile memory device of claim 1, wherein the decoder comprises:
a first gating circuit configured to provide at least one of a string selection signal to the string selection line, a ground selection signal to the ground selection line, and provide word line voltages to the plurality of word lines associated with the plurality of cell transistors on a first side of the memory cell array; and
a second gating circuit configured to provide at least one of the string selection signal to the string selection line and the ground selection signal to the ground selection line on a second side of the memory cell array.
3. The nonvolatile memory device of claim 2, wherein the first gating circuit and the second gating circuit are configured to provide the string selection signal to the string selection line on the first side and the second side of the memory cell array concurrently.
4. The nonvolatile memory device of claim 2, wherein the first gating circuit and the second gating circuit are configured to provide the ground selection signal to the ground selection line on the first side and the second side of the memory cell array concurrently.
5. The nonvolatile memory device of claim 2, wherein the first gating circuit and the second gating circuit are configured to provide the word line voltages to the plurality of word lines on one of the first side and the second side of the memory cell array.
6. The nonvolatile memory device of claim 2, wherein the first gating circuit comprises:
first pass transistors configured to provide a plurality of string selection signals to a plurality of string selection lines on the first side of the at least one of selection lines in response to a block selection signal;
second pass transistors configured to provide the plurality of word line voltages to the plurality of word lines in response to the block selection signal; and
a third pass transistor configured to provide the ground selection signal to a ground selection line on the first side in response to the block selection signal.
7. The nonvolatile memory device of claim 6, wherein the second gating circuit comprises:
fourth pass transistors configured to provide the plurality of string selection signals to the plurality of string selection lines on the second side in response to the block selection signal; and
a fifth pass transistor configured to provide the ground selection signal to the ground selection line on the second side in response to the block selection signal.
8. The nonvolatile memory device of claim 7, wherein the first to fifth pass transistors are high voltage transistors.
9. The nonvolatile memory device of claim 2, wherein the first and second gating circuits include ground transistors configured to ground the at least one of string selection line and ground selection line in response to a block shut-off signal.
10. The nonvolatile memory device of claim 1, wherein each of the plurality of cell transistors include a charge trap layer.
11. A method of reading a nonvolatile memory device, the nonvolatile memory device including a plurality of cell strings formed in a direction perpendicular to a substrate layer, each of the plurality of cell strings including at least one selection transistor and a cell transistor, the method comprising:
pre-charging a bit line connected to a selected cell string of the plurality of cell strings;
applying a word line voltage to a word line of the cell transistor and applying at least one selection signal to at least one selection line connected to the at least one selection transistor on both sides of the at least one selection line to setup the at least one selection signal more rapidly than the word line voltage.
12. The method of claim 11, wherein the at least one selection transistor comprises a string selection transistor connected to a string selection line and a ground selection transistor connected to a ground selection line.
13. The method of claim 11, wherein the at least one selection transistor corresponds to a string selection transistor connected to a string selection line.
14. The method of claim 11, wherein the at least one selection transistor corresponds to a ground selection transistor connected to a ground selection line.
15. The method of claim 11, wherein the cell transistor includes a charge trap layer.
16. The method of claim 11, wherein the at least one selection line is driven by at least two driving circuit, and the word line is driven by single driving circuit.
17. A storage device, comprising:
a nonvolatile memory device including a plurality of cell strings formed in a direction perpendicular to a substrate layer, wherein each of the plurality of cell strings are driven via at least one string selection line, a plurality of word lines, and at least one ground selection line; and
a memory controller configured to control the nonvolatile memory device to select at least one of the plurality of cell strings at a read operation,
wherein the at least one string selection line or the at least one ground selection line is driven in at least two directions.
18. The storage device of claim 17, wherein the nonvolatile memory device comprises:
a first gating circuit configured to drive the at least one string selection line and the at least one ground selection line; and
a second gating circuit configured to drive the at least one string selection line.
19. The storage device of claim 18, wherein the first gating circuit is configured to drive the plurality of word lines in single direction.
20. The storage device of claim 17, wherein the plurality of cell strings comprises a non-volatile memory that is monolithically formed in one or more physical levels of memory cells having active areas disposed above a silicon substrate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A bracing system for supporting a vertical wall structure comprising:
a vertical member comprising at least two keyed openings, said vertical member having a substantially Z-shaped cross-section, the Z-shaped cross-section including a first flange portion separated from a second flange portion by a web portion, the first flange portion contacting the vertical wall structure;
a bracket comprising at least two cleat members being removably engagable with said at least two keyed openings of said vertical member said bracket including a first end including said cleats and a second end; and
an adjustable strut member having an end secured to said second end of said bracket, wherein said at least two keyed openings of said vertical member have a key-shape defining a major axis parallel to said longitudinal axis of said vertical member, said keyed openings respectively comprising an upper section for receiving one of said cleat members and a lower section for slidably engaging said respective cleat member via an interference fit wherein the vertical member and bracket are reversibly joined without the use of a separate fastener wherein the bracket and vertical brace remain joined under a load.
2. The bracing system of claim 1, wherein said vertical member further comprises a first end and a second end defining therebetween a longitudinal axis and said at least two keyed openings are disposed along said longitudinal axis.
3. The bracing system of claim 1, wherein said Z-shaped cross section defines a plurality of bends, said plurality of bends including a first bend having a first angle and a second bend having a second angle, wherein said first angle and said second angle are about 90\xb0.
4. The bracing system of claim 1 wherein the vertical wall structure comprises insulated concrete forms including at least one anchoring region and at least one fastening member for coupling said vertical member to said anchoring region.
5. The bracing system of claim 1 wherein said adjustable strut comprises a swivel lock assembly in a region near said proximal end.
6. The bracing system of claim 1 further comprising a foundation and an end plate for pivotally securing said second end of said first vertical member to said foundation, wherein said endplate includes an engagement member that can be removably secured within one of said plurality of first keyed openings to couple said first longitudinal member and said end plate.
7. A brace assembly for a vertical tall wall structure comprising:
a vertical member having a substantially Z-shaped cross-section, the Z-shaped cross-section including a first flange portion separated from a second flange portion by a web portion, the first flange portion contacting the vertical wall structure, said vertical member defining a longitudinal axis having a plurality of keyed openings formed therein, said vertical member comprising a plurality of discrete vertical sections and an extension member securing said discrete vertical sections, wherein said extension member comprises a plurality of cleat members, wherein at least one of said plurality of cleat members is secured within a corresponding one of said plurality of keyed openings associated with each of said discrete vertical sections;
a bracket having a first lateral end and a second lateral end, wherein said first lateral end is secured to said vertical member via at least two of said plurality of keyed openings and said second lateral end includes at least one second opening; and
an adjustable length strut member having a distal end and a proximal end, wherein said proximal end is secured to said second lateral end of said bracket member via said second opening and said distal end is pivotally coupled to a support substantially orthogonal to said longitudinal axis, wherein said at least two keyed openings of said vertical member have a key-shape defining a major axis parallel to said longitudinal axis of said vertical member, said keyed openings respectively comprising an upper section for receiving one of said cleat members and a lower section for slidably engaging said respective cleat member via an interference fit wherein the vertical member and bracket are reversibly joined without the use of a separate fastener wherein the bracket and vertical brace remain joined under a load.
8. The brace assembly of claim 7 wherein said bracket further comprises a flange along said second lateral end for attachment to a vertical post.
9. The brace assembly of claim 8, further comprising an intermediate brace having a cleat for engagement with at least one of said plurality of keyed openings of said vertical member and a receiving structure on a second end for attaching to said vertical post to form a horizontal support member.
10. The brace assembly of claim 9 further comprising a plurality of said horizontal support members to form a ladder structure.
11. The brace assembly of claim 7 wherein the brace assembly further comprises a second adjustable length strut member attached to said vertical member at a different height via an intermediate brace having a cleat at a terminal end and a pivotal attachment point for said second adjustable length strut member.
12. A method of assembling a bracing structure for a building wall structure, the method comprising:
attaching a vertical member to said building wall structure, wherein said vertical member has a substantially z-shaped cross-section including a first flange portion separated from a second flange portion by a web portion, the first flange portion contacting the vertical wall structure and said vertical member includes at least two keyed openings;
reversibly securing a bracket to said vertical member via said at least two keyed openings said bracket including a first end including cleat members and a second end; and
attaching an adjustable strut member to said bracket at said second end, wherein said at least two keyed openings of said vertical member have a key-shape defining a major axis parallel to said longitudinal axis of said vertical member, said keyed openings respectively comprising an upper section for receiving one of said cleat members and a lower section for slidably engaging said respective cleat member via an interference fit wherein the vertical member and bracket are reversibly joined without the use of a separate fastener wherein the bracket and vertical brace remain joined under a load.
13. The method of claim 12, wherein said vertical member further comprises a first longitudinal member, a second longitudinal member, and an extension member, each of said first and second longitudinal members including a plurality of said keyed openings, said extension member including a plurality of engagement members, the method further comprising:
engaging at least one of said plurality of engagement members with said keyed openings in said first longitudinal member; and
engaging at least one other of said plurality of engagement members with said keyed openings in said second longitudinal member.
14. The method of claim 13 wherein said engagement members are cleats.