1. A method of etching a patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate has an exposed silicon-and-carbon-containing region and an exposed silicon oxide region, the method comprising:
flowing each of a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a plasma in the plasma region to produce plasma effluents; and
etching the exposed silicon-and-carbon-containing region by flowing the plasma effluents into the substrate processing region through through-holes in a showerhead, wherein the selectivity of the etching operation (silicon-and-carbon-containing region: silicon oxide region) is greater than or about 100:1.
2. The method of claim 1 wherein the exposed silicon-and-carbon-containing region is silicon carbide.
3. The method of claim 1 wherein the exposed silicon-and-carbon-containing region consists essentially of silicon and carbon.
4. The method of claim 1 wherein the exposed silicon-and-carbon-containing region comprises about 30% or more silicon and about 30% or more carbon.
5. The method of claim 1 wherein a temperature of the patterned substrate is greater than or about 0\xb0 C. and less than or about 50 \xb0 C.
6. The method of claim 1 wherein a pressure within the substrate processing region is below or about 50 Torr and above or about 0.1 Torr.
7. The method of claim 1 wherein forming a plasma in the plasma region to produce plasma effluents comprises applying RF power between about 10 Watts and about 2000 Watts to the plasma region.
8. The method of claim 1 wherein the plasma is a capacitively-coupled plasma.
9. The method of claim 1 wherein the oxygen-containing precursor comprises molecular oxygen (O2).
10. The method of claim 1 wherein the oxygen-containing precursor comprises at least one of O2, O3, N2O or NO2.
11. The method of claim 1 wherein the substrate processing region is plasma-free.
12. The method of claim 1 wherein the patterned substrate further comprises an exposed silicon oxide region and the selectivity of the etching operation (exposed silicon-and-carbon-containing region: exposed silicon oxide region) is greater than or about 20:1.
13. The method of claim 1 wherein the patterned substrate further comprises an exposed silicon oxide region and the selectivity of the etching operation (silicon-and-carbon-containing region: silicon oxide region) is greater than or about 500:1.
14. The method of claim 1 wherein the fluorine-containing precursor comprises NF3.
15. The method of claim 1 wherein the fluorine-containing precursor comprises a precursor selected from the group consisting of atomic fluorine, diatomic fluorine, nitrogen trifluoride, carbon tetrafluoride and xenon difluoride.
16. The method of claim 1 wherein the fluorine-containing precursor and the plasma effluents are essentially devoid of hydrogen.
17. The method of claim 1 wherein there is essentially no concentration of ionized species and free electrons within the substrate processing region.
18. The method of claim 1 wherein the minimum ID of the through-holes in the showerhead is between about 0.2 mm and about 5 mm.
19. The method of claim 1 wherein flowing each of the fluorine-containing precursor and the oxygen-containing precursor into the remote plasma region comprises maintaining an O:F atomic flow ratio above or about 0.5:1 and below or about 10:1.
20. A method of etching a patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate has an exposed silicon-and-carbon-containing region and an exposed silicon oxide region, the method comprising:
flowing each of a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a plasma in the plasma region to produce plasma effluents, wherein the fluorine-containing precursor comprises a precursor selected from the group consisting of atomic fluorine, diatomic fluorine, nitrogen trifluoride, carbon tetrafluoride and xenon difluoride, and wherein the fluorine-containing precursor and the plasma effluents are essentially devoid of hydrogen; and
etching the exposed silicon-and-carbon-containing region, wherein the selectivity of the etching operation (silicon-and-carbon-containing region: silicon oxide region) is greater than or about 100:1.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An integrated circuit (IC) with a self-proofreading function, comprising:
a micro control unit (MCU);
a one-time programmable (OTP) memory connected with the MCU, the OTP memory comprising an instruction memory region for storing instructions, and a parameter memory region for storing standard parameters;
an electrical charge pump and a switching circuit, wherein the electrical charge pump has an output port and an enable port connected to the MCU, and the switching circuit has a control port connected to the MCU; and
a first input port connected to the output port of the electrical charge pump, a second input port connected to a power source of the MCU, and an output port connected to the OTP memory to provide an operating voltage and a recording voltage for the OTP memory,
wherein the MCU computes a measured result according to the standard parameters.
2. The IC of claim 1, further comprising an analog digital converter (ADC) connected to the MCU, wherein the ADC is used for receiving measured signals and converting the measured signals to digital signals.
3. The IC of claim 1, wherein the instructions stored in the OTP memory has proofreading instructions and measuring instructions for enabling the IC operate under a proofreading mode and a measuring mode, respectively.
4. The IC of claim 1 ,further comprising a timing controller connected to the MCU, wherein the MCU outputs a measured result by the timing controller.
5. The IC of claim 1, the MCU accesses standard parameters and instructions from the OTP memory.
6. A measuring apparatus with a self-proofreading function, comprising a sensor; and an integrated circuit (IC), the IC comprising:
a micro control unit (MCU) for receiving digital signals;
an analog digital converter (ADC) connected to the MCU, the ADC being used for receiving measured signals from the sensor and converting the measured signals to digital signals; and
a one-time programmable (OTP) memory connecting with the MCU, the OTP memory comprising an instruction memory region for storing instructions and a parameter memory division for storing standard parameters;
an electrical charge pump and a switching circuit, wherein the electrical charge pump has an output port and an enable port connected to the MCU, and the switching circuit has a control port connected to the MCU; and
a first input port connected to the output port of the electrical charge pump, a second input port connected to a power source of the MCU, and an output port connected to the OTP memory to provide an operating voltage and a recording voltage for the OTP memory;
wherein the MCU computes the measured result corresponding to the digital signals, according to the standard parameters.
7. The measuring apparatus of the claim 6, further comprising a timing controller connected to the MCU, wherein the MCU outputs a measured result by the timing controller.
8. The measuring apparatus of the claim 6, wherein the instructions stored in the OTP memory has proofreading instructions and measuring instructions for enabling the IC operate under a proofreading mode and a measuring mode, respectively.