1. A method of forming a terminal pad, comprising: providing an electrically conductive wire formed in a dielectric layer on a substrate, a top surface of said wire substantially coplanar with a top surface of said dielectric layer; forming a passivation layer on said top surface of said dielectric layer and said top surface of said wire, said passivation layer comprising a lower dielectric layer on said top surfaces of said dielectric layer and said wire, an intermediate dielectric layer on a top surface of said lower dielectric layer and an upper dielectric layer on a top surface of said intermediate dielectric layer; forming a trench in said passivation layer, said trench extending from a top surface of said passivation layer to a bottom surface of said passivation layer, said top surface of said wire exposed in said bottom of said trench;
forming a conformal and electrically conductive liner directly on sidewalls of said trench and in direct physical and electrical contact with said top surface of said wire exposed in said bottom of said trench; and
filling said trench with an electrical core conductor, a top surface of said core conductor, a top surface of said liner and a top surface of said passivation layer being substantially coplanar, said core conductor and said liner comprising said terminal pad.
2. The method of claim 1, wherein said passivation layer further includes a chemical-mechanical-polish etch stop layer formed on a top surface of said upper dielectric layer.
3. The method of claim 1, further including forming a ball-limiting-metallurgy pad on said top surface of said terminal pad and overlapping all sides of said terminal pad.
4. The method of claim 3, further including forming a solder bump on a top surface of said ball-limiting-metallurgy pad.
5. The method of claim 1, wherein a perimeter defined by all sides of said trench is aligned within a perimeter defined by all sides of said wire.
6. The method of claim 1, wherein said wire comprises copper and said core conductor comprises Al or AlCu alloy.
7. The method of claim 1, wherein: said lower dielectric layer comprises silicon nitride or silicon carbide nitride;
said intermediate dielectric layer comprises silicon dioxide; said upper dielectric layer comprises silicon nitride; said conductive liner comprises Ti, TiN, Ta, TaN, W or combinations thereof; and
said core conductor comprises Al or AlCu.
8. A structure, comprising:
an electrically conductive wire formed in a dielectric layer on a substrate, a top surface of said wire substantially coplanar with a top surface of said dielectric layer;
a passivation layer on said top surface of said dielectric layer and said top surface of said wire, said passivation layer comprising a lower dielectric layer on said top surfaces of said dielectric layer and said wire, an intermediate dielectric layer on a top surface of said lower dielectric layer and an upper dielectric layer on a top surface of said intermediate dielectric layer;
a trench in said passivation layer, said trench extending from a top surface of said passivation layer to said top surface of said wire;
a conformal and electrically conductive liner on sidewalls of said trench and in direct physical and electrical contact with said top surface of said wire contained within said trench; and
an electrical core conductor, a top surface of said core conductor, a top surface of said liner and a top surface of said passivation layer being substantially coplanar, said core conductor and said liner comprising a terminal pad.
9. The structure of claim 8, wherein said passivation layer further includes a chemical-mechanical-polish etch stop layer formed on a top surface of said upper dielectric layer.
10. The structure of claim 8, further including a ball-limiting-metallurgy pad on said top surface of said terminal pad and overlapping all sides of said terminal pad.
11. The structure of claim 10, further including a solder bump on a top surface of said ball-limiting-metallurgy pad.
12. The structure of claim 8, wherein a perimeter defined by all sides of said trench is aligned within a perimeter defined by all sides of said wire.
13. The structure of claim 8, wherein said wire comprises copper and said core conductor comprises Al or AlCu alloy.
14. The structure of claim 8, wherein:
said lower dielectric layer comprises silicon nitride or silicon carbide nitride;
said intermediate dielectric layer comprises silicon dioxide;
said upper dielectric layer comprises silicon nitride;
said conductive liner comprises Ti, TiN, Ta, TaN, W or combinations thereof; and
said core conductor comprises Al or AlCu.
15. A method of forming a terminal pad, comprising:
providing an electrically conductive wire formed in a dielectric layer on a substrate, a top surface of said wire substantially coplanar with a top surface of said dielectric layer;
forming an electrically conductive barrier layer on said top surface of said dielectric layer and said top surface of said wire;
forming an electrically conductive layer on a top surface of said conductive barrier layer;
subtractively removing regions of said conductive passivation layer and regions of said conductive layer to form said terminal pad;
forming a electrically non-conductive passivation layer on said top surface of said dielectric layer and all exposed surfaces of said terminal pad, said passivation layer comprising a lower dielectric layer on said top surface of said dielectric layer and on said all exposed surfaces of said terminal pad and an intermediate dielectric layer on a top surface of said lower dielectric layer; and
forming a via in said passivation layer, said via extending from a top surface of said passivation layer to a top surface of said terminal pad.
16. The method of claim 15, further including forming a ball-limiting-metallurgy pad covering all sidewalls of said via, said top surface of said terminal pad exposed in a bottom of said via and said ball-limiting-metallurgy pad overlapping all sides of via.
17. The method of claim 16, further including forming a solder bump on a top surface of said ball-limiting-metallurgy pad.
18. The method of claim 15, wherein a perimeter defined by all sides of said wire is aligned within a perimeter defined by all sides of said terminal pad.
19. The method of claim 15, wherein said wire comprises copper, said conductive barrier layer is a barrier layer for diffusion of copper and said conductive layer comprises Al or AlCu alloy.
20. The method of claim 15, wherein a perimeter defined by all sidewalls of said via is aligned within a perimeter defined by all sides of said ball-limiting-metallurgy pad.
21. The method of claim 15, wherein:
said lower dielectric layer comprises silicon dioxide;
said intermediate dielectric layer comprises silicon nitride;
said conductive barrier layer comprises Ti, TiN, Ta, TaN, W or combinations thereof; and
said conductive layer comprises Al or AlCu.
22. The method of claim 15, wherein said passivation layer further includes an upper electrically non-conductive layer on a top surface of said intermediate dielectric layer, said upper layer comprising polyimide or photosensitive polyimide.
23. A structure, comprising:
an electrically conductive wire formed in a dielectric layer on a substrate, a top surface of said wire substantially coplanar with a top surface of said dielectric layer;
an electrically conductive barrier layer on said top surface of said dielectric layer and said top surface of said wire;
a terminal pad comprising an electrically conductive layer on a top surface of an electrically conductive barrier layer, said terminal pad in physical and electrical contact with said wire;
an electrically non-conductive passivation layer on said top surface of said dielectric layer and all exposed surfaces of said terminal pad, said passivation layer comprising a lower dielectric layer on said top surface of said dielectric layer and said all exposed surfaces of said terminal pad and an intermediate dielectric layer on a top surface of said lower dielectric layer; and
a via in said passivation layer, said via extending from a top surface of said passivation layer to a top surface of said terminal pad.
24. The structure of claim 23, further including a ball-limiting-metallurgy pad covering all sidewalls of said via, said top surface of said terminal pad exposed in a bottom of said via and said ball-limiting-metallurgy pad overlapping all sides of said via.
25. The structure of claim 24, further including a solder bump on a top surface of said ball-limiting-metallurgy pad.
26. The structure of claim 23, wherein a perimeter defined by all sides of said wire is aligned within a perimeter defined by all sides of said terminal pad.
27. The structure of claim 23, wherein said wire comprises copper, said conductive barrier layer is a barrier layer to the diffusion of copper and said conductive layer comprises Al or AlCu alloy.
28. The structure of claim 23, wherein a perimeter defined by all sidewalls of said via is aligned within a perimeter defined by all sides of said ball-limiting-metallurgy pad.
29. The structure of claim 23, wherein:
said lower dielectric layer comprises silicon dioxide;
said intermediate dielectric layer comprises silicon nitride;
said conductive barrier layer comprises Ti, TiN, Ta, TaN, W or combinations thereof; and
said conductive layer comprises Al or AlCu.
30. The method of claim 23, wherein said passivation layer further includes an upper electrically non-conductive layer on a top surface of said intermediate dielectric layer, said upper layer comprising polyimide or photosensitive polyimide.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of treating abnormal cells in a mammal, comprising administering to the mammal an effective amount of a human Enterovirus-C (HEV-C) that binds to intercellular adhesion molecule-1 (ICAM-1) for infectivity of the abnormal cells and is thereby capable of infecting the abnormal cells whereby death of the cells is caused, wherein the abnormal cells are cancer cells, and further wherein the HEV-C is administered intravenously, intratumorally, intraperitoneally or intramuscularly.
2. The method of claim 1, wherein the HEV-C binds to both ICAM-1 and decay accelerating factor (DAF) for infectivity of the abnormal cells.
3. The method of claim 1, wherein expression of ICAM-1 is upregulated on the abnormal cells relative to normal said cells expressing their normal phenotype.
4. The method of claim 1, wherein expression of ICAM-1 is upregulated on the abnormal cells relative to cells of surrounding tissue in which the abnormal cells are found.
5. The method of claim 1, wherein the HEV-C is a Coxsackievirus.
6. The method of claim 1, wherein the HEV-C is a recombinant virus.
7. The method of claim 1, wherein the abnormal cells are cells of a malignancy selected from the group consisting of a malignancy of the skin, melanoma, multiple myeloma, head and neck cancer, prostate cancer, stomach cancer, breast cancer, gastric cancer, colorectal cancer, glioma, and colon cancer.
8. The method of claim 1, wherein the HEV-C is administered by injection.
9. The method of claim 1, wherein the HEV-C is administered to the mammal in a dosage greater than about 1\xd7102 plaque forming units per ml of inoculant.
10. The method of claim 9, wherein the HEV-C is administered to the mammal in a dosage of between about 1\xd7102 to 1\xd7101 plaque forming units per ml of the inoculant.