1. A payload monitor adapted to provide data related to the payload of a work machine, said payload monitor comprising:
at least one sensor adapted to transmit a sensor signal related to the load being carried by said work machine;
a processor adapted to receive said sensor signal and perform a calculation, which includes applying a first coefficient to the sensor signal, to determine the payload of said work machine, and to perform the calculation with an alternate coefficient that is used to modify the first coefficient;
wherein said first coefficient and said alternate coefficient are used in said calculation to account for distribution of payload between a front and a rear axle.
2. The payload monitor of claim 1, wherein said alternate coefficient is input into said processor using a programming device.
3. The payload monitor of claim 2, wherein said programming device is a keypad.
4. The payload monitor of claim 2, wherein said programming device is a laptop computer.
5. The payload monitor of claim 2, wherein said programming device is a handheld computer.
6. The payload monitor of claim 1, wherein said alternate coefficient is determined using at least one load study.
7. A work machine for use to move material, said work machine comprising:
a frame;
a dump body adapted to receive a payload;
at least one sensor adapted to transmit a sensor signal related to the load being carried by said work machine; and
a payload monitor adapted to provide data related to the weight of the payload on the machine;
wherein said payload monitor is configured to;
perform a calculation, which includes applying a first coefficient to the sensor signal, to determine the payload of said work machine; and
perform the calculation with an alternate coefficient that is used to modify the first coefficient;
wherein said first coefficient and said alternate coefficient are used in said calculation to account for distribution of payload between a front and a rear axle.
8. The work machine of claim 7, wherein said alternate coefficient is input into a processor.
9. The work machine of claim 8, wherein said alternate coefficient is input into said processor using a programming device.
10. The work machine of claim 9, wherein said programming device is a keypad.
11. The work machine of claim 9, wherein said programming device is a laptop computer.
12. The work machine of claim 9, wherein said programming device is a handheld computer.
13. The work machine of claim 7, wherein said alternate coefficient is determined by providing at least one load study.
14. A method for calibrating a payload monitor adapted to calculate the weight of a payload being carried by a work machine, said method comprising the steps of:
determining an actual weight of said payload being carried by said machine,
calculating the weight of said payload using a first coefficient related to a distribution of the payload on the work machine,
comparing the actual weight of said payload to the calculated weight of said payload; and
determining an alternate coefficient to compensate for the difference between the actual weight and calculated weight of the payload,
inputting said alternate coefficient into said payload monitor.
15. The method of claim 14 including the step of using a keypad to input said alternate coefficient into said payload monitor.
16. The method of claim 14 including the step of using a laptop computer to input said alternate coefficient into said payload monitor.
17. The method of claim 14 including the step of using a handheld computer to input said alternate coefficient into said payload monitor.
18. The method of claim 14 including the step of substituting the alternate coefficient for the first coefficient.
19. The method of claim 14, including the step of adjusting the first coefficient by applying the alternate coefficient to the first coefficient using a mathematical operation.
20. A payload monitor adapted to provide data related to the payload of a work machine, said payload monitor comprising:
a first sensor adapted to transmit a first sensor signal related to a load being carried by a front portion of said work machine;
a second sensor adapted to transmit a second sensor signal related to a load being carried by a rear portion of said work machine;
a processor adapted to receive said sensor signals and perform a calculation, which includes applying a first coefficient to the first sensor signal, to determine the load being carried by the front portion of said work machine, and applying a second coefficient to the second sensor signal, to determine the load being carried by the rear portion of said work machine, and to perform the calculation with an alternate coefficient that is used to modify at least one of the first and second coefficients.
21. The payload monitor of claim 20, wherein the processor is configured to modify the at least one of the first and second coefficients with the alternate coefficient by using a mathematical operation.
22. The payload monitor of claim 20, wherein the processor is configured to substitute the alternate coefficient for the at least one of the first and second coefficients.
23. The payload monitor of claim 20, wherein the processor is configured to perform the calculation with the alternate coefficient modifying the first coefficient and another alternate coefficient modifying the second coefficient.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An operation method of a semiconductor device, the method comprising:
providing one or more memory elements each including a first semiconductor layer of a first conductivity type, second and third semiconductor layers of a second conductivity type, which are disposed to be separated from each other in the first semiconductor layer, a dielectric film on a lower-layer side and a conductive film on an upper-layer side, which are provided in a region corresponding to a part between the second and third semiconductor layers on the first semiconductor layer, a first electrode electrically connected to the second semiconductor layer, a second electrode electrically connected to the third semiconductor layer, and a third electrode electrically connected to the conductive film; and
performing operation of writing information on a memory element to be driven of the one or more memory elements,
wherein the operation of writing is performed by forming a filament in a region between the second and third semiconductor layers, which is a conductive path electrically linking these semiconductor layers, the filament being formed by causing a dielectric breakdown of at least a part of the dielectric film, through application of a voltage equal to or higher than a predetermined threshold between the second and third electrodes, thereby causing an electric current to flow between the conductive film and the third semiconductor layer.
2. The operation method according to claim 1, wherein in the memory element to be driven, the operation of writing is performed by applying the voltage equal to or higher than the threshold between the second and third electrodes, while setting each of the first and second semiconductor layers at a ground potential, and setting the conductive film at a predetermined potential to avoid formation of an inversion layer between the second and third semiconductor layers in the first semiconductor layer.
3. The operation method according to claim 2, wherein at a time of the operation of writing, a predetermined control transistor is made to be in an ON state, thereby setting the conductive film in the memory element to be driven at the predetermined potential, and
meanwhile, at a time other than the time of the operation of writing, the control transistor is set to be in an OFF state.
4. The operation method according to claim 1, wherein one or both of a conductive component of the first electrode and a conductive component of the second electrode are moved by migration, and thereby the filament is formed.
5. The operation method according to claim 1, wherein in the memory element in which the operation of writing is not performed, the second and third semiconductor layers are in an open state of being electrically separated from each other, and
meanwhile, in the memory element after the operation of writing is performed, the second and third semiconductor layers are in a state of being electrically connected to each other by a resistance component, due to formation of the filament.
6. The operation method according to claim 1, wherein one memory element and one selection transistor are provided to be connected to each other in series, between a bit line to apply the voltage equal to or higher than the threshold and a ground, and
the operation of writing is performed after the memory element to be driven is selected by making the selection transistor be in an ON state.
7. The operation method according to claim 6, wherein the memory element and the selection transistor are formed integrally in the same activated region.
8. The operation method according to claim 1, wherein a silicide layer is provided in each of the second and third semiconductor layers.
9. The operation method according to claim 8, wherein one or more of a conductive component of the first electrode, a conductive component of the second electrode, and a conductive component of the silicide layer are moved by migration, and thereby the filament is formed.
10. A semiconductor device comprising:
one or more memory elements each including
a first semiconductor layer of a first conductivity type,
second and third semiconductor layers of a second conductivity type, which are disposed to be separated from each other in the first semiconductor layer,
a dielectric film on a lower-layer side and a conductive film on an upper-layer side, which are provided in a region corresponding to a part between the second and third semiconductor layers on the first semiconductor layer,
a first electrode electrically connected to the second semiconductor layer,
a second electrode electrically connected to the third semiconductor layer, and
a third electrode electrically connected to the conductive film,
wherein in at least a partial memory element of the one or more memory elements,
a dielectric breakdown of at least a part of the dielectric film is caused, and
in a region between the second and third semiconductor layers, a filament that is a conductive path electrically linking these semiconductor layers is formed.
11. The semiconductor device according to claim 10, further comprising a drive section that performs operation of writing information for at least the partial memory element, by forming the filament by causing a dielectric breakdown of at least a part of the dielectric film, through application of a voltage equal to or higher than a predetermined threshold between the second and third electrodes, thereby causing an electric current to flow between the conductive film and the third semiconductor layer, in a memory element to be driven of the one or more memory elements.
12. The semiconductor device according to claim 10, further comprising a selection transistor to select a memory element to be driven from the one or more memory elements,
wherein the memory element and the selection transistor are formed integrally in the same activated region.