What is claimed:
1. A retainer clip for attaching a keypad to a beltline molding, said clip comprising:
a face plate having at least one aperture, and
a wall extending from said face plate, said wall having a plurality of tangs spaced thereabout, said wall configured to be received within an aperture in said beltline molding and sized to position the face plate therein, said tangs cooperating with said beltline molding to retain the faceplate thereto, said wall and keypad are configured to snappingly each other.
2. In combination,
a beltline molding comprising a U-shaped rigid member having an aperture;
a retainer clip comprising a face plate having at least one aperture, and a wall extending from said face plate, said wall having a plurality of tangs spaced thereabout, said wall configured to be received within an aperture in said beltline molding and sized to position the face plate therein, said tangs cooperating with said beltline molding to retain the faceplate thereto; and
a keypad having at least one button, said keypad engaging said wall positioning said button within said aperture of said retainer clip.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of growing non-polar Gallium Nitride (GaN), comprising:
growing GaN, including a non-polar a-plane GaN film, on an r-plane of a sapphire substrate using metalorganic chemical vapor deposition (MOCVD) and growth conditions including growth temperature, growth pressure, and a VIII ratio, including:
(a) depositing a GaN layer on the r-plane sapphire substrate at a first growth temperature between 400\xb0 C. and 900\xb0 C. and at atmospheric pressure; and
(b) growing the non-polar a-plane GaN film on the GaN layer at a growth pressure of 0.2 atmospheres or less, at the growth temperature higher than the first growth temperature, and using a VIII ratio of \u02dc1300, wherein:
the non-polar a-plane GaN film has:
a crystalline quality characterized by an on-axis Omega rocking curve having a full-width half-maximum (FWHM) of no more than 0.29\xb0 (1037\u2033) and an off-axis Omega rocking curve having a FWHM of no more than 0.46\xb0 (1659\u2033),
a threading dislocation density of no more than 2.6\xd71010 cm\u22122,
a threading dislocation line direction parallel to a film normal of the non-polar a-plane GaN film,
stacking faults aligned perpendicular to a c-axis of the non-polar a-plane GaN film with a stacking fault density of no more than 3.8\xd7105 cm\u22121,
a top surface with a surface roughness of no more than 2.6 nanometers (nm) over an area of 5 micrometers by 5 micrometers, and
surface pitting on a sub-micron scale with a density within an order of magnitude of the threading dislocation density.
2. The method of claim 1, wherein the non-polar a-plane GaN film comprises a coalesced film and has a wurtzite structure.
3. The method of claim 1, wherein the non-polar a-plane GaN film has a planar top surface.
4. The method of claim 1, wherein the non-polar a-plane GaN film is suitable for subsequent growth of device-quality III-nitride layers.
5. The method of claim 1, wherein the non-polar a-plane GaN film has a top surface that is a device substrate or base for subsequent growth of non-polar III-nitride device layers on the top surface of the non-polar a-plane GaN film.
6. The method of claim 1, wherein the GaN layer is
a nucleation andor buffer layer.
7. The method of claim 1, wherein
the growth temperature for the non-polar a-plane GaN film is about 1100\xb0 C.
8. The method of claim 1, wherein the growth conditions and the substrate obtain the non-polar a-plane GaN film having no c-plane content.
9. The method of claim 1, wherein the stacking fault density is at the top surface.
10. The method of claim 1, wherein the growth conditions obtain the non-polar a-plane GaN film with a stable a-plane orientation.
11. The method of claim 1, wherein the non-polar a-plane GaN film includes a thickness of 1.5 micrometers.
12. The method of claim 11, wherein the GaN layer is a buffer layer andor nucleation layer having at thickness of 1-100 nanometers.
13. The method of claim 1, wherein growing the non-polar a-plane GaN film includes using 30 \u03bcmol per minute Ga flow and 40,000 \u03bcmol per minute N flow, thereby providing a VIII ratio of approximately 1300.