1. A sense amplifier, comprising:
a first inverter having an input terminal coupled to a first line and an output terminal coupled to a second line; and
a second inverter having an input terminal coupled to the second line and an output terminal coupled to the first line,
wherein an NMOS transistor of the first inverter and an NMOS transistor of the second inverter have well biases different from each other.
2. The sense amplifier of claim 1, wherein a PMOS transistor of the first inverter and a PMOS transistor of the second inverter have well biases different from each other.
3. The sense amplifier of claim 2, wherein a first high voltage is applied as the well bias of the PMOS transistor of the first inverter, a second high voltage is applied as the well bias of the PMOS transistor of the second inverter, a first low voltage is applied as the well bias of the NMOS transistor of the first inverter, and a second low voltage is applied as the well bias of the PMOS transistor of the second inverter.
4. The sense amplifier of claim 3, wherein the first high voltage and the second high voltage are independently adjusted, and the first low voltage and the second low voltage are independently adjusted.
5. The sense amplifier of claim 1, wherein the first line and the second line comprise bitlines.
6. A sense amplifier, comprising:
a first inverter having an input terminal coupled to a first line and an output terminal coupled to a second line; and
a second inverter having an input terminal coupled to the second line and an output terminal coupled to the first line,
wherein a PMOS transistor of the first inverter and a PMOS transistor of the second inverter have well biases different from each other.
7. The sense amplifier of claim 6, wherein a first high voltage is applied as the well bias of the PMOS transistor of the first inverter, and a second high voltage is applied as the well bias of the PMOS transistor of the second inverter.
8. The sense amplifier of claim 7, wherein the first high voltage and the second high voltage are independently adjusted.
9. The sense amplifier of claim 6, wherein the first line and the second line comprise bitlines.
10. A semiconductor memory device, comprising:
a voltage generator configured to generate a first high voltage, a second high voltage, a first low voltage, and a second low voltage; and
a sense amplifier comprising a first inverter and a second inverter constituting a latch between a first line and a second line,
wherein the first high voltage and the first low voltage are used as well biases of the first inverter, and the second high voltage and the second low voltage are used as well biases of the second inverter.
11. The semiconductor memory device of claim 10, wherein the voltage generator comprises:
a first high voltage generator configured to generate the first high voltage;
a second high voltage generator configured to generate the second high voltage;
a first low voltage generator configured to generate the first low voltage; and
a second low voltage generator configured to generate the second low voltage.
12. The semiconductor memory device of claim 11, further comprising:
a high voltage switch configured to connect an output terminal of the first high voltage generator to an output terminal of the second high voltage generator in response to a first control signal; and
a low voltage switch configured to connect an output terminal of the first low voltage generator to an output terminal of the second low voltage generator in response to a second control signal.
13. The semiconductor memory device of claim 12, further comprising:
a first high voltage capacitor coupled to the output terminal of the first high voltage generator;
a second high voltage capacitor coupled to the output terminal of the second high voltage generator;
a first low voltage capacitor coupled to the output terminal of the first low voltage generator; and
a second low voltage capacitor coupled to the output terminal of the first low voltage generator.
14. The semiconductor memory device of claim 11, wherein the first high voltage generator adjusts the level of the first high voltage in response to a first high voltage tuning signal, the second high voltage generator adjusts the level of the second high voltage in response to a second high voltage tuning signal, the first low voltage generator adjusts the level of the first low voltage in response to a first low voltage tuning signal, and the second low voltage generator adjusts the level of the second low voltage in response to a second low voltage tuning signal.
15. The semiconductor memory device of claim 10, wherein the first line and the second line comprise bitlines.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A golf club head which is metallic and hollow and has a face part, a sole part, a side part, and crown part, wherein:
a thick part, having an increased wall thickness, is provided in a central portion in the toe-heel direction of the rear portion of the crown part,
the thick part has a rear side width, in a toe-heel direction, not less than 20% and not greater than 80% of a maximum width of the crown part, in a toe-heal direction,
the width in the toe-heel direction of the thick part increases from the foremost portion of the thick part toward the rear portion of the crown part;
the average thickness of the crown part excluding the thick part is 0.4 to 0.9 mm, the average thickness of the thick part is 0.9 to 3.0 mm, and the difference therebetween is 0.2 to 2.5 mm, and
in the plan view of the golf club head, the distance a between the front edge portion of the thick part and the foremost portion of the crown part is 20 to 80% of the length L in the front and rear direction of the crown part.
2. The golf club head according to claim 1, wherein
the thick part reaches the peripheral edge portion on the rear side of the crown part, and a tip end portion on the toe side and a tip end portion on the heel side of the thick part are located in the peripheral edge portion of the crown part.
3. The golf club head according to claim 1, wherein the width of the foremost portion of the thick part is 3 to 40 mm.
4. The golf club head according to any claim 1, wherein the metal forming the golf club head is titanium or a titanium alloy.