1461155056-b63c510e-04b7-4ec2-806a-067a9bcfd942

What is claimed is:

1. A heat pump comprising:
a compressor having an inlet for drawing, and compressing low temperature and low pressure refrigerant, and an outlet for discharging the compressed refrigerant;
a four way valve for connecting the outlet and the inlet to an indoor heat exchanger and an outdoor heat exchanger selectively depending on coolingheating;
the indoor heat exchanger for evaporatingcondensing the refrigerant by heat exchange with room air in coolingheating, respectively;
the outdoor heat exchanger for evaporatingcondensing the refrigerant by heat exchange with external air;
a capillary tube having a reduced diameter for expansion of the refrigerant;
a change over valve having a plunger movable by a pressure difference provided therein; and,
a connection tube connected the indoor heat exchanger and a four way valve, and a bypass tube connected between the connection tube and the change over valve.
2. A heat pump as claimed in claim 1, wherein the change over valve includes a through hole having a small inside diameter on a compressor side and an expanded inside diameter in rear of the compressor side, into which the plunger is inserted.
3. A heat pump as claimed in claim 2, wherein the plunger includes a tapered portion on the compressor side.
4. A heat pump as claimed in claim 2, wherein the chance over valve includes one end connected to the bypass tube, and the other end in communication with the compressor.
5. A heat pump as claimed in claim 2, wherein the change over valve includes the other end having a communication hole for making communication between an inside of the compressor and the change over valve.
6. A method for controlling a cooling capability of a heat pump in cooling, comprising the steps of:
taking a portion of low pressure refrigerant flowing to a compressor;
leading the portion to one side of a change over valve through a bypass tube, to cause a plunger drawn toward the bypass tube by a pressure difference between the high pressure refrigerant in the compressor and the low pressure refrigerant so that the refrigerant flows from the compressor to the bypass tube; and,
leading the refrigerant flowed from the compressor to the bypass tube to the compressor again through an inlet of the compressor.
7. A method as claimed in claim 6, wherein the plunger is blocked by a stopper at a rear end of the change over valve, for making communication between a compression chamber of the compressor and the change over valve.
8. A method for controlling a heating capability of a heat pump in heating, comprising the steps of:
taking a portion of high pressure refrigerant discharged from a compressor; and.
leading the portion to one side of a change over valve through a bypass tube, to cause a plunger drawn toward the compressor by a pressure difference between the refrigerant in the bypass tube and the refrigerant in the compressor, so that the change over valve and the compressor are isolated from each other.
9. A method as claimed in claim 8, wherein the plunger is drawn toward a communication hole formed between a compression chamber of the compressor and the change over valve, to shut the communication hole.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for forming a metal film on the surface of a substrate to be processed comprising:
flowing a process gas including a raw gas containing a metal carbonyl and a carrier gas containing carbon monoxide to a region of an upper-outer side of a diameter direction than the periphery of the substrate to be processed; and
diffusing the metal carbonyl to the surface of the substrate to be processed from the flow of the process gas thereby depositing the metal film on the surface of the substrate to be processed.
2. The method according to claim 1, further comprising flowing the process gas through a baffle plate that has an outer periphery larger than that of the substrate to be processed and is positioned to face the surface of the substrate to be processed.
3. The method according to claim 1, further comprising forming an exhaust pipe that forms an iris at the region of an upper-outer side of a diameter direction, and controlling the deposition rate on the surface of the substrate to be processed by controlling the iris.
4. The method according to claim 1, wherein the film formation is performed at a substrate temperature where a dissociation of the metal carbonyl is suppressed by a carbon monoxide gas.
5. The method according to claim 1, wherein the film formation is performed at a substrate temperature of 230\xb0 C. or lower.
6. A film forming apparatus comprising:
a substrate holding plate configured to hold a substrate to be processed;
a process chamber that defines a process space along with the substrate holding plate;
an exhaust pipe configured to exhaust the process space from an upper outside of a diameter direction of the substrate holding plate; and
a process gas supply unit provided in the process chamber to face the substrate holding plate and configured to supply a process gas containing a raw gas and a carrier gas to the process space,
wherein the process gas supply unit, when the substrate holding plate is viewed from a vertical direction, includes a process gas introduce unit provided in such a way that the process gas flows at an upper-outer side of a diameter direction of the substrate to be processed to the exhaust pipe in the process space while avoiding the substrate to be processed.
7. The film forming apparatus according to claim 6, wherein the process gas introduce unit includes a baffle plate having a plurality of openings formed along with the outer periphery of the substrate to be processed disposed on the substrate holding plate, when viewed from a vertical direction.
8. The film forming apparatus of claim 7, wherein each of the plurality of openings extends along with the outer periphery.
9. The film forming apparatus of claim 7, wherein the plurality of openings form an opening row along the outer periphery.
10. The film forming apparatus of claim 7, wherein the plurality of openings form a plurality of opening rows extending along the outer periphery.
11. The film forming apparatus of claim 6, wherein the exhaust pipe is provided continuously along the outer periphery of the substrate holding plate in between the outer periphery of the substrate holding plate and the process chamber.
12. The film forming apparatus of claim 11, wherein the substrate holding plate is maintained to be capable of a proximity separating with respect to the process chamber, and the conductance of the exhaust pipe varies by separating the substrate holding plate proximately with respect to the process chamber.
13. The film forming apparatus of claim 6, wherein the process gas contains a metal carbonyl and the carrier gas contains carbon monoxide.
14. The film forming apparatus of claim 13, wherein the substrate holding plate includes a heater, the heater is controlled by a controller, and wherein the controller controls the temperature of the substrate holding plate to be lower than a temperature where the carbon monoxide can suppress the dissociation of the metal carbonyl.
15. The film forming apparatus of claim 14, wherein the controller controls the temperature of the substrate holding plate to be 230\xb0 C. or lower.
16. A computer readable medium storing a computer program that, when executed, causes a general purpose computer to control a film forming apparatus which includes:
a substrate holding plate configured to hold a substrate to be processed;
a process chamber that defines a process space along with the substrate holding plate;
an exhaust pipe configured to exhaust the process space from an upper outside of a diameter direction of the substrate holding plate; and
a process gas supply unit provided in the process chamber to face the substrate holding plate and configured to supply a process gas containing a raw gas and a carrier gas to the process space,
wherein the process gas supply unit, when the substrate holding plate is viewed from a vertical direction, includes a process gas introduce unit provided in such a way that the process gas flows at an upper-outer side of a diameter direction of the substrate to be processed to the exhaust pipe in the process space while avoiding the substrate to be processed,
wherein the process gas supply unit is provided with a metal carbonyl base material as a process gas and a carbon monoxide as a carrier gas, and
wherein the general purpose computer controls the temperature of the substrate holding plate to be lower than a temperature where the carbon monoxide can suppress the dissociation of the metal carbonyl.