1. An alkali-developable photosensitive resin composition, comprising:
a carboxyl group-containing resin;
a photopolymerization initiator;
a compound comprising a plurality of ethylenically unsaturated groups in a molecule of the compound;
a filler; and
a petroleum aromatic solvent,
wherein the alkali-developable photosensitive resin composition has a naphthalene content of 300 ppm or less, and the petroleum aromatic solvent comprises 1,2,4-trimethylbenzene and 1,2,3-trimethylbenzene in an amount of from 10 to 30% by volume, an aromatic component having 10 carbon atoms in an amount of 60% by volume or more, 1,3,5-trimethylbenzene in an amount of less than 1% by volume, and benzene, toluene, and xylene in an amount of less than 0.01% by volume.
2. The alkali-developable photosensitive resin composition according to claim 1,
wherein the petroleum aromatic solvent has a naphthalene content of 500 ppm or less with respect to the petroleum aromatic solvent.
3. The alkali-developable photosensitive resin composition according to claim 1, further comprising:
a thermosetting component.
4. The alkali-developable photosensitive resin composition according to claim 2, further comprising:
a thermosetting component.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of manufacturing a semiconductor device, comprising:
preparing a semiconductor substrate having first to fourth active regions and element isolating insulation films, the third and fourth active regions sandwiching the second active region, and the element isolating insulation films isolating the first to fourth active regions;
forming a protective film for preventing the semiconductor substrate from being oxidized, the protective film having an opening over the second active region and the element isolating insulation film adjoining the second active region;
forming a first gate insulation film on the second active region by conducting a thermal oxidation treatment through the opening;
removing the protective film;
forming a second gate insulation film on the first, third and fourth active regions, by conducting a thermal oxidation treatment, the second gate insulation film being thinner than the first gate insulation film;
forming a first gate electrode on the second gate insulation film over a portion of the first active region, so that a remainder of the first active region is not covered with the first gate electrode;
forming a second gate electrode on the first gate insulation film over the second active region, so that an entirety of the second active region is covered with the second gate electrode;
forming a pair of first doped regions as a source and a drain in the first active region; and
forming a pair of second doped regions as a source and a drain in the third and fourth active regions.
2. The method of manufacturing a semiconductor device according to claim 1, wherein the protective film having the openings is formed by forming a first film for preventing the semiconductor substrate from being oxidized on an entire surface of the semiconductor substrate, and removing areas of the first film on the second active region and the element isolating insulation film adjoining the second active region.
3. The method of manufacturing a semiconductor device according to claim 1, further comprising:
forming sidewall spacers on sides of the gate electrodes,
wherein the first and second doped regions are formed by implanting impurities into the first, third and fourth regions in a self aligning manner while using the gate electrodes and the sidewall spacers as masks.
4. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor substrate is a silicon substrate, and the protective film is a silicon nitride film.
5. A method of manufacturing a semiconductor device, comprising:
preparing a semiconductor substrate having first to fourth active regions and element isolating insulation films, the third and fourth active regions sandwiching the second active region, and the element isolating insulation films isolating the first to fourth active regions respectively;
forming a protective film for preventing the semiconductor substrate from being oxidized, the protective film having openings over the second active region and the element isolating insulation film adjoining at least one of the second to fourth active regions;
forming a first gate insulation film on the second active region by conducting a thermal oxidation treatment through the openings;
removing the protective film;
forming a second gate insulation film on the first, third and fourth active regions, by conducting a thermal oxidation treatment, the second gate insulation film being thinner than the first gate insulation film;
forming a first gate electrode on the second gate insulation film over a portion of the first active region, so that a remainder of the first active region is not covered with the first gate electrode;
forming a second gate electrode on the first gate insulation film over the second active region, so that an entirety of the second active region is covered with the second gate electrode;
forming a pair of first doped regions as a source and a drain in the first active region; and
forming a pair of second doped regions as a source and a drain in the third and fourth active regions.
6. The method of manufacturing a semiconductor device according to claim 5, wherein the protective film having the openings is formed by forming a first film for preventing the semiconductor substrate from being oxidized on an entire surface of the semiconductor substrate, and removing areas of the first film on the second active region and the element isolating insulation film adjoining at least one of the second to fourth active regions.
7. The method of manufacturing a semiconductor device according to claim 5, further comprising:
forming sidewall spacers on sides of the gate electrodes,
wherein the first and second doped regions are formed by implanting impurities into the first, third and fourth regions in a self-aligning manner while using the gate electrodes and the sidewall spacers as masks.
8. The method of manufacturing a semiconductor device according to claim 5, wherein the semiconductor substrate is a silicon substrate, and the protective film is a silicon nitride film.
9. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor substrate having first to fourth active regions and element isolating insulation films, the second active region being located between the third and fourth active regions, and the element isolating insulation films being located around the first to fourth active regions;
forming a protective film for preventing the semiconductor substrate from being oxidized, the protective film having an opening over the second active region and the element isolating insulation film adjacent to the second active region;
oxidizing a surface of the second active region through the opening to form a first gate insulation film on the second active region;
removing the protective film;
oxidizing a surface of the first, third and fourth active regions to form a second gate insulation film on the first, third and fourth active regions, the second gate insulation film being thinner than the first gate insulation film;
forming a first gate electrode on the second gate insulation film over a portion of the first active region, so that a remainder of the first active region is not covered with the first gate electrode;
forming a second gate electrode on the first gate insulation film over the second active region, so that an entirety of the second active region is covered with the second gate electrode;
forming a pair of first doped regions as a source and a drain in the first active region; and
forming a pair of second doped regions as a source and a drain in the third and fourth active regions.
10. The method of manufacturing a semiconductor device according to claim 9, wherein said forming a protective film comprises forming a first film for preventing the semiconductor substrate from being oxidized on an entire surface of the semiconductor substrate, and removing areas of the first film on the second active region and the element isolating insulation film adjoining the second active region.
11. The method of manufacturing a semiconductor device according to claim 9, further comprising:
forming sidewall spacers on sides of the gate electrodes,
wherein the first and second doped regions are formed by implanting impurities into the first, third and fourth regions in a self-aligning manner while using the gate electrodes and the sidewall spacers as masks.
12. The method of manufacturing a semiconductor device according to claim 9, wherein the semiconductor substrate is a silicon substrate, and the protective film is a silicon nitride film.