1. A heating system for a subsurface formation, comprising:
three substantially u-shaped heaters, first end portions of the heaters being electrically coupled to a single, three-phase wye transformer, second end portions of the heaters being electrically coupled to each other andor to ground;
wherein each heater is located in one of three separate openings that span between a first common wellbore and a second common wellbore in a hydrocarbon containing layer in the formation, and wherein the three heaters enter the formation through the first common wellbore, pass through the separate openings, and exit the formation through the second common wellbore so that the magnetic fields of the three heaters at least partially cancel out in the common wellbores.
2. The system of claim 1, wherein at least two of the heaters have heating sections that are at least partially substantially parallel in the hydrocarbon layer of the formation.
3. The system of claim 1, wherein at least one of the three heaters comprises an exposed metal heating section.
4. The system of claim 1, wherein at least one of the three heaters comprises an insulated conductor heating section.
5. The system of claim 1, wherein at least one of the three heaters comprises a conductor-in-conduit heating section.
6. The system of claim 1, wherein the three heaters comprise 410 stainless steel in at least part of the heating sections of the heaters, and copper in at least part of the overburden sections of the heaters.
7. The system of claim 1, further comprising a ferromagnetic casing in at least part of the overburden section of the first common wellbore.
8. The system of claim 1, further comprising a ferromagnetic casing in at least part of the overburden section of the second common wellbore.
9. The system of claim 1, wherein each heater is coupled to one phase of the transformer.
10. The system of claim 1, further comprising multiples of three additional heaters entering through the first common wellbore.
11. The system of claim 1, further comprising multiples of three additional heaters entering through the first common wellbore and exiting through the second common wellbore.
12. The system of claim 1, wherein at least one of the heaters is used to directionally steer drilling of at least one of the openings in the formation used for at least one of the other heaters.
13. The system of claim 1, wherein the three heaters are electrically coupled together in the second common wellbore.
14. The system of claim 1, wherein at least one of the three heaters provides different heat outputs along at least part of the length of the heater.
15. The system of claim 1, wherein at least one of the three heaters has different materials along at least part of the length of the heater to provide different heat outputs along at least part of the length of the heater.
16. The system of claim 1, wherein at least one of the three heaters has different dimensions along at least part of the length of the heater to provide different heat outputs along at least part of the length of the heater.
17. The system of claim 1, wherein at least a majority of the first common wellbore is vertical, substantially vertical, or vertically inclined, and at least a majority of the second common wellbore is vertical, substantially vertical, or vertically inclined.
18. The system of claim 1, wherein at least a majority of at least one of the three heaters is horizontal, substantially horizontal, or horizontally inclined.
19. A method of heating a subsurface formation, comprising:
providing heat from three substantially u-shaped heaters, wherein first end portions of the heaters are electrically coupled to a single, three-phase wye transformer, and second end portions of the heaters are electrically coupled to each other andor to ground;
wherein each heater is located in one of three separate openings that span between a first common wellbore and a second common wellbore in a hydrocarbon containing layer in the formation, and wherein the three heaters enter the formation through the first common wellbore, pass through the separate openings, and exit the formation through the second common wellbore so that the magnetic fields of the three heaters at least partially cancel out in the common wellbores; and
allowing the heat to transfer from the heaters to a portion of the formation.
20. The method of claim 19, further comprising mobilizing at least some hydrocarbons in the portion of the formation with the transferred heat.
21. The method of claim 19, further comprising mobilizing at least some hydrocarbons in the portion of the formation with the transferred heat, and producing at least some of the mobilized hydrocarbons.
22. The system of claim 1, wherein the three heaters comprise a first heater, a second heater, and a third heater, the three separate openings comprise a first opening, a second opening, and a third opening, and wherein the first heater is in the first opening, the second heater is in the second opening, and the third heater is in the third opening.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for manufacturing a semiconductor substrate, comprising:
a first step of implanting hydrogen ions to a main surface side of a silicon substrate at a dosage of 1.5\xd71017 atomscm2 or higher;
a second step of bonding a main surface of the silicon substrate and a main surface of a support substrate made of a low melting point material;
a third step of performing heat treatment on the bonded substrate at a temperature of 120\xb0 C. or higher and 250\xb0 C. or lower and below a melting point of the support substrate; and
a fourth step of delaminating a silicon crystal film along a hydrogen ion implanted boundary of the silicon substrate out of the bonded substrate after the heat treatment to form a silicon thin film on a surface of the support substrate.
2. The method for manufacturing a semiconductor substrate according to claim 1, wherein the support substrate is made of an organic material, and the second step of bonding the substrates is carried out by applying an adhesive to the main surface of the silicon substrate and the main surface of the support substrate.
3. The method for manufacturing a semiconductor substrate according to claim 2, wherein the support substrate is made of plastics.
4. The method for manufacturing a semiconductor substrate according to claim 2, wherein the adhesive is silicon oil.
5. The method for manufacturing a semiconductor substrate according to claim 3, wherein the adhesive is silicon oil.
6. The method for manufacturing a semiconductor substrate according to claim 2, wherein the fourth step is carried out by applying a mechanical shock onto a hydrogen ion implanted region at an edge of the silicon substrate.
7. The method for manufacturing a semiconductor substrate according to claim 3, wherein the fourth step is carried out by applying a mechanical shock onto a hydrogen ion implanted region at an edge of the silicon substrate.
8. The method for manufacturing a semiconductor substrate according to claim 4, wherein the fourth step is carried out by applying a mechanical shock onto a hydrogen ion implanted region at an edge of the silicon substrate.
9. The method for manufacturing a semiconductor substrate according to claim 5, wherein the fourth step is carried out by applying a mechanical shock onto a hydrogen ion implanted region at an edge of the silicon substrate.