1. A thin film transistor (TFT), a source of the TFT comprising a first source portion, a drain of the TFT comprising a first drain portion, wherein the first source portion and the first drain portion are disposed in the same layer as an active layer of the TFT and at two opposite sides of the active layer, and the first source portion and the first drain portion are in direct contact with the active layer respectively.
2. The TFT according to claim 1, wherein the first source portion and the first drain portion are made of a material obtained from subjecting the same material as the active layer to a conductivity treatment.
3. The TFT according to claim 1, wherein the active layer is made of a semiconductor material.
4. The TFT according to claim 1, wherein the TFT further comprises an etch stop layer disposed on the active layer, the first source portion as well as the first drain portion; the source further comprises a second source portion disposed on the etch stop layer; the drain further comprises the second drain portion disposed on the etch stop layer; wherein the second source portion is connected to the first source portion, and the second drain portion is connected to the first drain portion.
5. The TFT according to claim 4, wherein two first via holes penetrating through the etch stop layer and respectively above the first source portion and the first drain portion are disposed in the etch stop layer; the second source portion is connected to the first source portion through one first via hole above the first source portion, and the second drain portion is connected to the first drain portion through the other first via hole above the first drain portion.
6. The TFT according to claim 1, wherein the TFT further comprises a gate disposed above or below the active layer.
7. A TFT array substrate, comprising a plurality of pixel units, wherein each of the pixel units comprises a switch TFT, and the switch TFT is the TFT according to claim 1.
8. The TFT array substrate according to claim 7, wherein the TFT array substrate is an active matrix organic light emitting display (AMOLED) array substrate, each of the pixel units of the TFT array substrate further comprises a drive TFT, and wherein the drive TFT comprises:
a thin film transistor (TFT), wherein a source of the TFT comprises a first source portion, a drain of the TFT comprising a first drain portion, wherein the first source portion and the first drain portion are disposed in the same layer as an active layer of the TFT and at two opposite sides of the active layer, and the first source portion and the first drain portion are in direct contact with the active layer respectively.
9. The TFT array substrate according to claim 8, wherein the AMOLED array substrate further comprises a gate, a gate insulation layer, an etch stop layer and a store capacitance lower electrode, wherein a second via hole penetrating through both the etch stop layer and the gate insulation layer is disposed in the etch stop layer, the store capacitance lower electrode is connected to the gate of the drive TFT through the second via hole, and the store capacitance lower electrode is disposed in the same layer as the gate of the switch TFT.
10. The TFT array substrate according to claim 9, wherein a connection metal layer in the same layer as the second source portion and the second drain portion of the switch TFT is disposed in the second via hole, the gate of the drive TFT is connected to the store capacitance lower electrode through the connection metal layer.
11. The TFT array substrate according to claim 10, wherein the AMOLED array substrate further comprises a pixel electrode, the pixel electrode is connected to the second drain portion of the switch TFT.
12. A display device, comprising the TFT array substrate according to claim 7.
13. A method of manufacturing a TFT array substrate, comprising:
forming a first source portion pattern of a source, a first drain portion pattern of a drain, and an active layer pattern on a base substrate by patterning process, wherein the first source portion and the first drain portion are respectively disposed at two opposite sides of an active layer and in direct contact with the active layer; and
performing a conductivity treatment on the first source portion and the first drain portion.
14. The method according to claim 13, wherein the conductivity treatment comprises hydrogen plasma treatment.
15. The method according to claim 13, wherein the method further comprises the following step before performing a conductivity treatment:
forming an etch stop layer pattern on the base substrate with the active layer formed thereon by patterning process, wherein two first via holes penetrating through the etch stop layer and respectively above the first source portion and the first drain portion are formed in the etch stop layer.
16. The method according to claim 15, further comprising:
forming a second source portion pattern of the source and a second drain portion pattern of the drain on the base substrate with the etch stop layer formed thereon by patterning process; the second source portion is connected to the first source portion through one first via hole above the first source portion, and the second drain portion is connected to the first drain portion through the other first via hole above the first drain portion.
17. The method according to claim 16, further comprising:
forming a gate and a passivation layer on the base substrate with the second source portion and the second drain portion formed thereon by patterning process.
18. The method according to claim 13, wherein before the step of forming the first source portion pattern of the source, the first drain portion pattern of the drain and the active layer pattern, the method further comprises:
forming a gate pattern and a gate insulation layer on the base substrate by patterning process.
19. The method according to claim 18, wherein the TFT array substrate is an active matrix organic light emitting display (AMOLED) array substrate, the method further comprises the following step while simultaneously forming the gate pattern on the base substrate:
forming a store capacitance lower electrode pattern in the same layer as the gate.
20. The method according to claim 19, wherein the step of forming the etch stop layer pattern on the base substrate with the active layer formed thereon by patterning process further comprises:
forming a second via hole which penetrates through both the etch stop layer and the gate insulation layer in the etch stop layer; wherein the store capacitance lower electrode is connected to the gate of the drive TFT by the second via hole.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A heat-curable epoxy resin composition, comprising:
a) a glycidyl epoxy resin; and
b) an impact modifier that is selected from the group consisting of: a polyesteramide, a copolymer formed from a polyester and polyamide, a polyurethane, or a polyurethane formed from a polyester;
wherein:
i) the ester-containing portion of the impact modifier consists of:
1) a residue from a dimer fatty diol; or at least one acid residue selected from the group consisting of: a dimer fatty acid and a non-dimeric fatty acid; and
2) at least one diol residue selected from the group consisting of: a polyol having molecular weight of between 50 and 200 and a dimer fatty diol;
provided that the ester-containing portion of the impact modifier contains a residue from at least one of the following: the dimer fatty acid, the dimer fatty diol, or both;
ii) the composition phase separates upon curing to form phase-separated domains andor particles comprising the impact modifier; and
iii) the weight ratio of epoxy resin:impact modifier is in the range from 1.5 to 20:1.
2. The composition of claim 1, wherein the impact modifier is a polyester.
3. The composition of claim 1, wherein the impact modifier is a polyesteramide.
4. The composition of claim 1, wherein the impact modifier is a copolymer formed from a polyester and polyamide.
5. The composition of claim 1, wherein the impact modifier is a polyurethane formed from a polyester.
6. A heat-curable epoxy resin composition, comprising:
a) a glycidyl epoxy resin; and
b) a polyester impact modifier, consisting of:
1) at least one acid residue selected from the group consisting of: a dimer fatty acid and a non-dimeric fatty acid; and
2) at least one diol residue selected from the group consisting of: a polyol having a molecular weight of between 50 and 200 and a dimer fatty diol;
provided that the polyester impact modifier contains a residue from at least one of the following: the dimer fatty acid, the dimer fatty diol, or both;
wherein:
i) the composition phase separates upon curing to form phase-separated domains andor particles comprising the impact modifier; and
ii) the weight ratio of epoxy resin:impact modifier is in the range from 1.5 to 20:1.
7. The composition of claim 6, wherein the polyester is formed from dimer fatty acids, adipic acid, and at least one diol having a molecular weight in the range from 50 to 200.
8. The composition of claim 6, wherein the impact modifier comprises in the range from 15 to 50% by weight of dimer fatty acid andor dimer fatty diol residues.
9. The composition of claim 6, wherein the weight ratio of epoxy resin:impact modifier is in the range from 1.5 to 10:1.
10. The composition of claim 6, comprising in the range from 10 to 50% by weight of impact modifier.
11. The composition of claim 6, comprising in the range from 4 to 20% by weight of dimer fatty acid andor dimer fatty diol residues.
12. The composition of claim 6, comprising a reaction product of an epoxy resin and a prepolymer wherein the prepolymer comprises the reaction product of an epoxy resin and the oligomeric andor polymeric impact modifier.
13. The composition of claim 12, wherein the prepolymer comprises in the range from 20 to 60% by weight of impact modifier.
14. The composition of claim 6, wherein said polyols comprise: pentaerythritol; glycerol; trimethylolpropane; ethylene glycol; diethylene glycol; 1,3-propylene glycol; dipropylene glycol; 1,4-butylene glycol; 1,6-hexylene glycol; neopentyl glycol; 3-methyl pentane glycol; 1,2-propylene glycol; 1,4-bis(hydroxymethyl)cyclohexane; or (1,4-cyclohexane-dimethanol).
15. The composition of claim 14, wherein said polyols comprise: ethylene glycol; diethylene glycol; 1,4-butylene glycol; 1,6-hexylene glycol; or neopentyl glycol.
16. The composition of claim 14, wherein said polyols comprise: 1,4-butylene glycol; 1,6-hexylene glycol; or neopentyl glycol.
17. The composition of claim 14, wherein the polyester is formed from dimer fatty acids and adipic acid.
18. The composition of claim 17, wherein said polyester comprises polyol residues derived from polyols selected from the group consisting of 1,4-butylene glycol, 1,6-hexylene glycol and neopentyl glycol.
19. The composition of claim 6, wherein the polyester impact modifier comprises a ratio of dimer fatty acid residues to non-dimeric fatty acid residues in the range from 30 to 70%:30 to 70% by weight of the total dicarboxylic acids.
20. The composition of claim 19, wherein the impact modifier is formed from dimer fatty acids, adipic acid, and at least one diol having a molecular weight in the range from 50 to 200.
21. The composition of claim 20, wherein said polyester comprises polyol residues derived from polyols selected from the group consisting of 1,4-butylene glycol, 1,6-hexylene glycol and neopentyl glycol.
22. A heat-curable electronic assembly adhesive composition comprising the heat-curable epoxy resin composition according to claim 6.
23. A method of forming a heat-curable epoxy resin composition comprising the heat-curable epoxy resin composition according to claim 6, wherein the method comprises:
a) reacting the impact modifier with a first epoxy resin to form a prepolymer, and
b) mixing the prepolymer with a second epoxy resin.
24. The method of claim 23, wherein the molecular weight of the first epoxy resin is less than the molecular weight of the second epoxy resin.
25. A method of assembling components, comprising:
a) interposing a heat-curable epoxy resin adhesive composition between respective surfaces of the components; and
b) curing said composition with the components in contact therewith, said adhesive composition comprising the heat-curable epoxy resin composition according to claim 6.
26. A cured epoxy resin composition comprising a reaction product of:
a) a glycidyl epoxy resin; and
b) an impact modifier that is selected from the group consisting of: a polyesteramide, a copolymer formed from a polyester and polyamide, a polyurethane, or a polyurethane formed from a polyester;
wherein:
i) the ester-containing portion of the impact modifier consists of:
1) at least one acid residue selected from the group consisting of: a dimer fatty acid and a non-dimeric fatty acid; and
2) at least one diol residue selected from the group consisting of: a polyol having molecular weight of between 50 and 200 and a dimer fatty diol;
provided that the ester-containing portion of the impact modifier contains a residue from at least one of the following: the dimer fatty acid, the dimer fatty diol, or both;
ii) the cured resin composition comprises phase-separated domains andor particles comprising the impact modifier; and
iii) the weight ratio of epoxy resin:impact modifier is in the range from 1.5 to 20:1.
27. The composition of claim 26, wherein the impact modifier is a polyurethane.
28. The composition of claim 26, wherein the impact modifier is a polyesteramide, a copolymer formed from a polyester and polyamide, or a polyurethane formed from a polyester.
29. A cured epoxy resin composition comprising a reaction product of:
a) a glycidyl epoxy resin; and
b) a polyester impact modifier, consisting of:
1) at least one acid residue selected from the group consisting of: a dimer fatty acid and a non-dimeric fatty acid; and
2) at least one diol residue selected from the group consisting of: a polyol having a molecular weight of between 50 and 200 and a dimer fatty diol;
provided that the polyester impact modifier contains a residue from at least one of the following: the dimer fatty acid, the dimer fatty diol, or both;
wherein:
i) said composition comprises phase-separated domains andor particles comprising the impact modifier; and
ii) the weight ratio of epoxy resin:impact modifier is in the range from 1.5 to 20:1.
30. The composition of claim 29, wherein the domains andor particles have a mean particle diameter in the range from 0.4 to 7 \u03bcm.
31. The composition of claim 29, wherein the domains andor particles have a mean aspect ratio in the range from 0.6 to 1.4:1.
32. The composition of claim 29, wherein less than 25% by number of domains andor particles have a particle diameter of less than 0.5 \u03bcm.
33. The composition of claim 29, wherein less than 20% by number of domains andor particles have a particle diameter of greater than 5 \u03bcm.
34. The composition of claim 29, wherein the interfacial work of adhesion (Ga) is greater than 70 Jm\u22122.
35. The composition of claim 29, wherein the essential work of fracture is in the range from 12 to 18 kJm\u22122.
36. The composition of claim 29, wherein the domains andor particles have an aspect ratio in the range from 0.7 to 1.3:1 and a mean particle diameter in the range from 0.8 to 5 \u03bcm.
37. The composition of claim 36, wherein at least 60% by number of the domains andor particles have a particle diameter in the range from 0.8 to 5 \u03bcm.
38. The composition of claim 36, wherein less than 25% by number of domains andor particles have a particle diameter of less than 0.5 \u03bcm.
39. The composition of claim 36, wherein less than 20% by number of domains andor particles have a particle diameter of greater than 5 \u03bcm.
40. The composition of claim 29, wherein said polyols comprise: pentaerythritol; glycerol; trimethylolpropane; ethylene glycol; diethylene glycol; 1,3-propylene glycol; dipropylene glycol; 1,4-butylene glycol; 1,6-hexylene glycol; neopentyl glycol; 3-methyl pentane glycol; 1,2-propylene glycol; 1,4-bis(hydroxymethyl)cyclohexane; or (1,4-cyclohexane-dimethanol).
41. The composition of claim 40, wherein said polyols comprise: ethylene glycol; diethylene glycol; 1,4-butylene glycol; 1,6-hexylene glycol; or neopentyl glycol.
42. The composition of claim 40, wherein said polyols comprise: 1,4-butylene glycol; 1,6-hexylene glycol; or neopentyl glycol.
43. A circuit board comprising a chip or die bonded by the cured epoxy resin composition according to claim 29.
44. A prepolymer comprising a reaction product of:
a) 40 to 80 wt. % of an epoxy resin; and
b) 20 to 60 wt. % of a polyester impact modifier, consisting of:
1) at least one acid residue selected from the group consisting of: a dimer fatty acid and a non-dimeric fatty acid; and
2) at least one diol residue selected from the group consisting of: a polyol having a molecular weight of between 50 and 200 and a dimer fatty diol;
provided that the polyester impact modifier contains in the range of 15 to 50 wt. % of a residue from at least one of the following: the dimer fatty acid, the dimer fatty diol, or both.