1. A hybrid comprising at least one inorganic layered compound in the form of fullerene-like structure or a nanotube and at least one metal nanoparticle, wherein said hybrid is a photocatalyst.
2. A hybrid according to claim 1, wherein said at least one inorganic layered compound is a compound of formula (I):
MpXn\u2003\u2003(I)
wherein
M is a metal selected from the group consisting of transition metals, post-transition metals, lanthanoid metals and actinoid metals;
X is selected from the group consisting of S, Se, and Te;
p is 1 or 2; and
n is 1, 2, 3, 4 or 5.
3. A hybrid according to claim 2, wherein M is selected from W, Mo, V, Zr, Hf, Pt, Re, Nb, Ti, Ga, In, Sn, Pb, Ta and Bi.
4. A hybrid according to claim 1, wherein said at least one inorganic layered compound is selected from a group consisting of WS2, MoS2, WSe2, MoSe2, NbS2, ReS2, TiS2, TaS2, ZrS2 and any combination thereof.
5. A hybrid according to claim 1, wherein said at least one inorganic layered compound is in the form of a nanotube.
6. A hybrid according to claim 1, wherein said at least one metal nanoparticle is selected from the group consisting of Ni, Co, Fe, Ti, Cu, V, Mn, Cr, Au, Pt, Pd, Ru, Rh, Ir, Ag, Os and any combination thereof and oxides thereof.
7. A hybrid according to claim 1, wherein said at least one metal nanoparticle is deposited on the surface of said at least one inorganic layered compound.
8. A hybrid according to claim 1, wherein said at least one nanoparticle has a particle size of between about 1 mn to about 100 nm.
9. A hybrid according to claim 1, wherein said inorganic layered compound and nanoparticle have a diameter in the range of between about 20 nm to about 200 nm.
10. A hybrid according to claim 1, comprising WS2 nanostructure and at least one metal nanoparticle.
11. A hybrid according to claim 1, comprising at least one inorganic fullerene-like nanoparticle and at least one metal nanoparticle.
12. A hybrid according to claim 1, for use as a catalytic agent.
13. A process for the preparation of a hybrid comprising at least one inorganic layered compound or fullerene-like nanoparticle and at least one metal nanoparticle, said process comprising:
providing at least one inorganic layered compound or fullerene-like nanoparticle;
electroless plating at least a portion of the surface of said inorganic layered compound or fullerene-like nanoparticle with at least one metal nanoparticle; thereby providing said hybrid.
14. A method of catalyzing an organic decomposition reaction, comprising performing said organic decomposition reaction in the presence of at least one catalytic agent comprising at least one inorganic layered compound in the form of fullerene-like structure or a nanotube and at least one metal nanoparticle.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a silicon containing film on the surface of one or more substrates, characterized in that: a silylamine moiety and one or more reactant precursors are reacted in a process chamber by flowing the silylamine moiety and the one or more reactant precursors across a top surface of the one or more substrates to form a film thereon.
2. The method of claim 1 wherein the method is carried out at a deposition temperature of less than 550\xb0 C.
3. The method of claim 1 wherein said silylamine moiety is comprised of the formula:
HmN(SiH3)n
where n is an integer from 1 to 3 and m is equal to 3\u2212n.
4. The method of claim 1 wherein said silylamine moiety is comprised of the formula:
HmN(Si2H5)n
where n is an integer from 1 to 3 and m is equal to 3\u2212n.
5. The method of claim 1 wherein a silicon oxide film is formed on the surface of the substrate and the method is carried out a deposition temperature in the range of approximately 150-550\xb0 C.
6. The method of claim 1 wherein a silicon nitride film is formed on the surface of the substrate and the method is carried out a deposition temperature in the range of approximately 300-800\xb0 C.,
7. The method of claim 6 wherein the deposition temperature is in the range of approximately 500-520\xb0 C.
8. The method of claim 1 where the silylamine moiety and precursors are flowed into the process chamber concurrently.
9. The method of claim 1 where the silylamine moiety and precursors are flowed into the process chamber sequentially.
10. A method of forming a silicon containing film on one or more substrates in a process chamber comprising: conveying to the process chamber, either sequentially or concurrently, a precursor comprising a silylamine moiety and at least one reactant containing nitrogen to form a silicon-nitrogen film on the surface of one or more substrates.
11. The method of claim 10 wherein the process chamber is configured to contain a single substrate.
12. The method of claim 10 wherein the process chamber is configured to contain a plurality of substrates.
13. The method of claim 10 wherein:
the method is performed at a temperature in the range of approximately 300 to 800\xb0 C.;
at a pressure between 0.01 mTorr and 760 Torr; and
using total precursor flow rates between 0 and 20,000 sccm.
14. The method of claim 10 wherein said silylamine moiety is comprised of the formula:
HmN(SiH3)n
where n is an integer from 1 to 3 and m is equal to 3\u2212n.
15. The method of claim 10 wherein said silylamine moiety is comprised of the formula:
HmN(Si2H5)n
where n is an integer from 1 to 3 and m is equal to 3\u2212n.
16. The method of claim 10 wherein the silylamine moiety and the at least one reactant precursor, are flowed concurrently and across a top surface of the one or more substrates to form a film thereon.
17. The method of claim 10 wherein the deposition temperature is in the range of approximately 500-550\xb0 C.
18. A method of forming a silicon containing film on one or more substrates in a process chamber comprising: conveying to a process chamber, either sequentially or concurrently, a precursor comprising a silylamine moiety and at least one reactant containing oxygen to form a silicon-oxygen film on the one or more substrates.
19. The method of claim 18 wherein the process chamber is configured to contain a single substrate.
20. The method of claim 18 wherein the process chamber is configured to contain a plurality of substrates.
21. The method of claim 18 wherein:
the method is performed at a temperature of less than 550\xb0 C.;
at a pressure between 0.01 mTorr and 760 Torr; and
using total precursor flow rates between 0 and 20,000 sccm.
22. The method of claim 18 wherein said silylamine moiety is comprised of the formula:
HmN(SiH3)n
where n is an integer from 1 to 3 and m is equal to 3\u2212n.
23. The method of claim 18 wherein said silylamine moiety is comprised of the formula:
HmN(Si2H5)n
where n is an integer from 1 to 3 and m is equal to 3\u2212n.
24. The method of claim 18 wherein the silylamine moiety and the at least one reactant, are flowed concurrently and across a top surface of the one or more substrates to form a film thereon.
25. The method of claim 18 wherein the method is carried out at a deposition temperature in the range of approximately 150-550\xb0 C.
26. A method of forming a film on one or more substrates in a process chamber comprising:
conveying a first precursor comprising a silylamine moiety to the process chamber sequence to form a first layer on the substrate;
conveying a second reactant containing both nitrogen and oxygen to react with the first layer to form a silicon-nitrogen-oxygen film; and
repeating the above steps until the desired thickness of the silicon-nitrogen-oxygen film is formed.
27. The method of claim 26 wherein the process chamber is configured to contain a single substrate.
28. The method of claim 26 wherein the process chamber is configured to contain a plurality of substrates.
29. The method of claim 26 wherein:
the method is performed at a temperature of less than 550\xb0 C.;
at a pressure between 0.01 mTorr and 760 Torr; and
using total precursor flow rates between 0 and 20,000 sccm.
30. A method comprising: conveying, either sequentially or concurrently, a first precursor comprising a silylamine moiety to the process chamber a second reactant containing nitrogen and a third reactant containing oxygen to form a silicon-nitrogen-oxygen film.
31. The method of claim 30 wherein the process chamber is configured to contain a single substrate.
32. The method of claim 30 wherein the process chamber is configured to contain a plurality of substrates.
33. The method of claim 30 wherein:
the method is performed at a temperature of less than 550\xb0 C.;
at a pressure between 0.01 mTorr and 760 Torr; and
using total precursor flow rates between 0 and 20,000 sccm.
34. The method of claim 30 where the silylamine moiety, the second reactant containing nitrogen and the third reactant containing oxygen are conveyed concurrently and flow across a top surface of the one or more substrates to form a film thereon.