What is claimed is:
1. A process of forming a container cell, comprising:
forming a trench in a semiconductor substrate;
forming an isolation film within said trench;
forming a first gate stack upon said semiconductor substrate having an edge aligned with and adjacent to an edge of said trench;
forming a second gate stack upon said isolation film within said trench; and
etching a container cell into said isolation film within said trench, said container cell being situated substantially between said first and second gate stacks and having an edge defined by said semiconductor substrate and said isolation film, said edge of said container cell substantially extending to and terminating at each of said first and second gate stacks.
2. A process of forming a container cell as defined in claim 1, wherein said etching a container cell etches said semiconductor substrate such that a portion of said container cell extends beneath said first gate stack.
3. A process of forming a container cell as defined in claim 1, wherein forming a trench comprises spinning on a photoresist, masking, exposing and patterning said photoresist to create a photoresist mask, and anisotropically etching through said photoresist mask.
4. A process of forming a container cell as defined claim 1, wherein said isolation film is a TEOS film.
5. A process of forming a container cell as defined claim 1, wherein said isolation film is a PSG film.
6. A process of forming a container cell as defined claim 1, wherein said isolation film is a BPSG film.
7. A process of forming a container cell as defined in claim 1, wherein forming a first gate stack and forming a second gate stack include forming a silicon nitride spacer, respectively, upon said first and said second gate stacks.
8. A process of forming a container cell as defined in claim 1, wherein etching a container cell is an RIE etch process.
9. A process of forming a container cell as defined in claim 1, further comprising:
forming a first polycrystalline silicon layer within said container cell;
depositing a cell dielectric upon said first polycrystalline silicon layer; and
depositing a second polycrystalline silicon layer continuously upon said first gate stack, upon said cell dielectric, and upon said second gate stack.
10. A process of forming a container cell as defined in claim 9, wherein said first polycrystalline silicon layer is formed by an in-situ doping CVD process.
11. A process of forming a container cell as defined in claim 9, wherein said second polycrystalline silicon layer is formed by an in-situ doping CVD process.
12. A process of forming a container cell as defined in claim 1, wherein said isolation film and said semiconductor substrate have an interface below said container cell.
13. A process of forming a container cell as defined in claim 1, wherein said isolation film and said semiconductor substrate have an interface below said container cell, such that said interface is coplanar with said edge defined by said semiconductor substrate and said isolation film.
14. A process of forming a container cell as defined in claim 1, wherein said isolation film and said semiconductor substrate have an interface below said container cell, such that said interface is not coplanar with said edge defined by said semiconductor substrate and said isolation film.
15. A process of forming a container cell, comprising:
forming a trench in a semiconductor substrate;
forming a conformal isolation film within said trench;
forming a first gate stack upon said semiconductor substrate having an edge aligned with and adjacent to an edge of said trench;
forming a second gate stack upon said isolation film within said trench; and
etching a container cell into said isolation film within said trench, said container cell being situated substantially between said first and second gate stacks and having an edge defined by said semiconductor substrate and said isolation film, said edge of said container cell substantially extending to and terminating at each of said first and second gate stacks, wherein said semiconductor substrate and said isolation film have an interface that extends below said edge into said semiconductor substrate.
16. A process of forming a container cell as defined in claim 15, wherein said forming an isolation film is performed by forming an oxide film by the decomposition of TEOS.
17. A process of forming a container cell as defined in claim 15, wherein said container cell is electrically isolated between said isolation film and said semiconductor substrate.
18. A process of forming a container cell as defined in claim 15, wherein said etching a container cell comprises RIE.
19. A process of forming a container cell, comprising:
forming a trench in a semiconductor substrate by spinning on a photoresist, masking, exposing and patterning said photoresist to create a photoresist mask, and anisotropically etching through said photoresist mask;
forming a conformal isolation film within said trench by forming an oxide film by deposition;
forming a first gate stack upon said semiconductor substrate having an edge aligned with and adjacent to an edge of said trench;
forming a second gate stack upon said isolation film within said trench; and
etching a container cell into said isolation film within said trench, said container cell being situated substantially between said first and second gate stacks and having an edge defined by said semiconductor substrate and said isolation film, said edge of said container cell substantially extending to and terminating at each of said first and second gate stacks, wherein said semiconductor substrate and said isolation film form an interface that extends below said container cell into said semiconductor substrate.
20. A process of forming a container cell as defined in claim 1, wherein said edge and said interface are coplanar.
21. A process of forming a container cell as defined in claim 1, wherein said edge and said interface are not coplanar.
22. A process of forming a container cell as defined in claim 19, further comprising:
forming a first polycrystalline silicon layer within said container cell;
depositing a cell dielectric upon said first polycrystalline silicon layer; and
depositing a second polycrystalline silicon layer continuously upon said first gate stack, upon said cell dielectric, and upon said second gate stack.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A tire for motor vehicles bearing heavy loads comprising:
(a) a carcass ply based on metal cords and an elastomeric carcass layer coating said cords,
(b) an inner elastomeric layer which defines the radially inner face of said tire, thereby circumscribing the inner space of the tire, and which protects the carcass ply from diffusion of air coming from the inner space of the tire, and
(c) an intermediate reinforcement layer located between said carcass ply and said inner layer, said intermediate reinforcement layer being formed from a composition comprising:
(i) a natural or synthetic polyisoprene having a majority of chains with cis-1,4 bonds and a solution copolymer of one or more conjugated diene monomers and one or more vinyl aromatic monomers, wherein said copolymer is a solution SBR copolymer in an amount that is at least 50 phr and said solution SBR copolymer simultaneously satisfies the following relationships:
D\u226760\u22121.75.VA\u2003\u2003(1)
D\u2266116\u22121.64.VA\u2003\u2003(2)
D>10\u2003\u2003(3)
VA>10,\u2003\u2003(4)
wherein D is the amount of diene chains having a 1, 2 bond content (in %) and VA is the amount of vinyl aromatic chains (in %), and
(ii) carbon black, in an amount of 25 to 85 parts by weight per hundred parts of said elastomer (phr),
wherein said carbon black has values of DBP oil absorption (in ml100 g) and of BET specific surface area (in m2g) which fulfil the following relationship:
DBP\u2266\u22120.88.BET+190.
2. The tire according to claim 1, wherein the composition comprises
(a) polyisoprene having a greater than 80% cis-1,4 bond content, wherein said solution SBR copolymer satisfies the following relationships:
D\u226766\u22121.58.VA\u2003\u2003(i)
D\u2266124\u22121.71.VA\u2003\u2003(ii)
D>10\u2003\u2003(iii)
VA>10\u2003\u2003(iv)
wherein D is the amount of diene chains having a 1, 2 content (in %) and VA is the amount of vinyl aromatic chains (in %), and
(b) carbon black having values of DBP oil absorption (in ml100 g) and of BET specific surface area (in m2g) that fulfil the following relationship:
DBP\u2266\u22120.88.BET+185.
3. The tire according to claim 1 or 2, wherein the composition comprises a white reinforcing filler in an amount of less than 50 phr, said filler comprising silica andor alumina, having surface SiOH andor AIOH functions, respectively.
4. The tire according to claim 3, wherein the white reinforcing filler has a BET specific surface area of between 30 m2g and 240 m2g.
5. The tire according to claim 1 or 2, wherein the composition comprises a modified carbon black having surface SiOH andor AIOH functions, in an amount of less than 50 phr.
6. The tire according to claim 1 or 2 wherein the composition comprises a paraphenylene diamine antioxidant in an amount of 1 to 5 phr.
7. The tire according to claim 1 or 2 wherein the composition comprises a metal salt selected from the group consisting of organic salts and hydroxides of cobalt, nickel and iron, in an amount of 0.03 to 3 phr.
8. The tire according to claim 1 or 2 wherein the composition comprises stearic acid in an amount of less than 2 phr.
9. The tire according to claim 1 or 2 wherein the composition comprises zinc oxide in an amount of more than 2 phr.
10. The tire according to claim 1 or 2 wherein the composition comprises sulphur in an amount of 1 to 6 phr.
11. The tire according to claim 1 or 2, wherein the intermediate elastomeric reinforcement layer has a thickness of 1 to 4 mm.
12. The tire according to claim 1 or 2, wherein the composition further comprises kaolin.
13. A method for manufacturing a tire for motor vehicles bearing heavy loads comprising:
(a) a carcass ply based on metal cords and an elastomeric carcass layer coating said cords,
(b) an inner elastomeric layer which defines a radially inner face of said tire, thereby circumscribing an inner space of the tire, and which protects the carcass ply from diffusion of air coming from the inner space of the tire, and
(c) an intermediate reinforcement layer located between said carcass ply and said inner layer, wherein said intermediate layer is formed from a composition which is obtained by a process comprising the steps of:
(i) preparing in solution a copolymer of one or more conjugated diene monomers and one or more vinyl aromatic monomers, wherein said copolymer is a solution SBR copolymer in an amount that is at least 50 phr and said solution SBR copolymer simultaneously satisfies the following relationships:
D\u226760\u22121.75.VA\u2003\u2003(1)
D\u2266116\u22121.64.VA\u2003\u2003(2)
D>10\u2003\u2003(3)
VA>10,\u2003\u2003(4)
wherein D is the amount of diene chains having a 1,2 bond content (in %) and VA is the amount of vinyl aromatic chains (in %),
(ii) blending the copolymer obtained in step (i) with a natural or synthetic polyisoprene having a majority of chains with cis-1,4 bonds to obtain an elastomeric blend,
(iii) effecting a thermomechanical working of the elastomeric blend obtained in (ii) with the other constituents of said composition including carbon black in an amount of 25 to 85 parts by weight per hundred parts of said elastomeric blend (phr), said carbon black having values of DBP oil absorption (in ml100 g) and of BET specific surface area (in m2g) which fulfil the following relationship:
DBP\u2266\u22120.88.BET+190.
14. The tire according to claim 1, wherein said polyisoprene has a cis-1,4 content greater than 80%.
15. The tire according to claim 1, wherein the amount of SBR copolymer is in the range from about 50 to about 80 phr.