1. A method of manufacture of an integrated circuit packaging system comprising:
providing an encapsulation system having a mold chase with a buffer layer attached thereto;
forming a base integrated circuit package including:
providing a base substrate,
connecting an exposed interconnect to the base substrate, a portion of the exposed interconnect having the buffer layer attached thereon,
mounting a base component over the base substrate, and
forming a base encapsulation over the base substrate and the exposed interconnect using the encapsulation system; and
releasing the encapsulation system providing the portion of the exposed interconnect exposed from the base encapsulation, the exposed interconnect having characteristics of the buffer layer removed.
2. The method as claimed in claim 1 wherein providing the encapsulation system having the buffer layer includes providing the encapsulation system having a soft material.
3. The method as claimed in claim 1 wherein connecting the exposed interconnect includes attaching the exposed interconnect on the base substrate and adjacent the base component, the base component partially exposed from the base encapsulation.
4. The method as claimed in claim 1 wherein forming the base integrated circuit package includes mounting an interface module over the base substrate, the interface module having the exposed interconnect attached thereon.
5. The method as claimed in claim 1 wherein mounting the base component includes mounting the base component over the base substrate, the base component having the exposed interconnect attached thereon.
6. A method of manufacture of an integrated circuit packaging system comprising:
providing an encapsulation system having a mold chase with a buffer layer attached thereto;
forming a base integrated circuit package including:
providing a base substrate,
connecting an exposed interconnect to the base substrate, a portion of the exposed interconnect having the buffer layer attached thereon and protected by the buffer layer,
mounting a base component over the base substrate, and
forming a base encapsulation over the base substrate and the exposed interconnect using the encapsulation system, the base encapsulation having a recess with characteristics of the buffer layer removed; and
releasing the encapsulation system providing the portion of the exposed interconnect exposed from the base encapsulation in the recess, the exposed interconnect having characteristics of the buffer layer removed.
7. The method as claimed in claim 6 wherein providing the encapsulation system having the buffer layer includes providing a film.
8. The method as claimed in claim 6 further comprising mounting a stack integrated circuit package over the base integrated circuit package, the base integrated circuit package having an interface module over the base component and with the exposed interconnect attached thereon.
9. The method as claimed in claim 6 further comprising mounting a stack integrated circuit package over the base integrated circuit package, whereby the base integrated circuit package having the base component includes a redistribution layer die with the exposed interconnect attached thereon.
10. An integrated circuit packaging system comprising:
a base integrated circuit package including:
a base substrate,
an exposed interconnect connected to the base substrate,
a base component over the base substrate, and
a base encapsulation, having characteristics of being formed by an encapsulation system with a mold chase and a buffer layer attached to the mold chase, the exposed interconnect having characteristics of the buffer layer removed and partially exposed from the base encapsulation.
11. The system as claimed in claim 10 wherein the base encapsulation having characteristics of being formed by the encapsulation system with the buffer layer includes the base encapsulation having characteristics of being formed by the encapsulation system with a soft material.
12. The system as claimed in claim 10 wherein the exposed interconnect includes the exposed interconnect on the base substrate and adjacent the base component, the base component partially exposed from the base encapsulation.
13. The system as claimed in claim 10 wherein the base integrated circuit package includes an interface module over the base substrate, the interface module having the exposed interconnect attached thereon.
14. The system as claimed in claim 10 wherein the base component includes the base component over the base substrate, the base component having the exposed interconnect attached thereto.
15. The system as claimed in claim 10 wherein:
the exposed interconnect includes the exposed interconnect having the characteristics of being protected by the buffer layer; and
the base encapsulation includes a recess in which a portion of the exposed interconnect is exposed, the recess having characteristics of the buffer layer removed.
16. The system as claimed in claim 15 wherein the base encapsulation having characteristics of being formed by the encapsulation system with the buffer layer includes the encapsulation system with a film.
17. The system as claimed in claim 15 further comprising a stack integrated circuit package over the base integrated circuit package, the base integrated circuit package having an interface module over the base component and with the exposed interconnect attached thereon.
18. The system as claimed in claim 15 further comprising a stack integrated circuit package over the base integrated circuit package, whereby the base integrated circuit package having the base component includes a redistribution layer die with the exposed interconnect attached thereon.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of producing an article comprising at least one magnetocalorically active phase, comprising:
providing an intermediate article comprising, in total, elements in amounts capable of providing at least one (La1-aMa)(Fe1-b-cTbYc)13-dXe phase and less than 5 Vol % impurities, wherein 0\u2266a\u22660.9, 0\u2266b\u22660.2, 0.05\u2266c\u22660.2, \u22121\u2266d\u2266+1, 0\u2266e\u22663, M is one or more of the elements Ce, Pr and Nd, T is one or more of the elements Co, Ni, Mn and Cr, Y is one or more of the elements Si, Al, As, Ga, Ge, Sn and Sb, and X is one or more of the elements H, B, C, N, Li and Be, wherein the intermediate article comprises a permanent magnet,
working the intermediate article by removing at least one portion of the intermediate article, and then
heat treating the intermediate article to produce a final product comprising at least one magnetocalorically active (La1-aMa)(Fe1-b-cTbYc)13-dXe phase.
2. The method according to claim 1, wherein the intermediate article comprises an Alpha-Fe content of greater than 50 vol %.
3. The method according to claim 1, further comprising heat treating the intermediate article to produce an Alpha-Fe content of less than 5 vol %.
4. The method according to claim 3, wherein said producing the intermediate article comprises by heat treating a precursor article comprising at least one phase with a NaZn13-type crystal structure.
5. The method according to claim 4, wherein said producing the precursor article comprises heat treating under conditions that produce at least one Alpha-Fe-type phase.
6. The method according to claim 5, wherein said heat treating comprises heat treating the precursor article under conditions that decompose the phase with the NaZn13-type crystal structure and form at least one Alpha-Fe-type phase.
7. The method according to claim 6, wherein said heat treating comprises heat treating the precursor article under conditions that produce permanently magnetic inclusions in a non-magnetic matrix.
8. The method according to claim 7, wherein said heat treating comprises heat treating the precursor article to produce a permanently magnetic portion of at least 60 vol %.
9. The method according to claim 4, further comprising producing the precursor article by mixing powders that provide, in total, elements in amounts capable of providing at least one (La1-aMa)(Fe1-b-cTbYc)13-dXe phase and sintering the powders at a temperature T1 to produce at least one phase with a NaZn13-type crystal structure.
10. The method according to claim 9, further comprising heat treating the precursor article at a temperature T2 to form the intermediate article comprising at least one permanently magnetic phase, wherein T2<T1 after the heat treating at temperature T1.
11. The method according to claim 10, wherein T2 produces a decomposition of the phase with the NaZn13-type crystal structure at T2.
12. The method according to claim 10, further comprising heat treating the intermediate article at a temperature T3 to produce a final product comprising at least one magnetocalorically active (La1-aMa)(Fe1-b-cTbYc)13-dXe phase, wherein T3>T2.
13. The method according to claim 12, wherein T3<T1.
14. The method according to claim 13, wherein the precursor article comprises a composition that produces a reversible decomposition of the phase with the NaZn13-type crystal structure at T2 and that produces a reformation of the NaZn13-type crystal structure at T3.
15. The method according to claim 1, wherein the portion of the intermediate article is removed by machining.
16. The method according to claim 1, wherein the portion of the intermediate article is removed by mechanical grinding, mechanical polishing or chemical-mechanical polishing.
17. The method according to claim 1, wherein the portion of the intermediate article is removed by electric spark cutting or wire erosion cutting or laser cutting or laser drilling or water beam cutting.
18. The method according to one of claim 1, wherein by the removing a portion of the intermediate article comprises separating the intermediate article into two or more separate pieces.
19. The method according to claim 1, wherein the removing portion of the intermediate article comprises forming at least one channel in a surface of the article or at least one through-hole in the article.
20. An intermediate article for the production of an article comprising at least one magnetocalorically active phase, comprising, in total, elements in amounts capable of providing at least one (La1-aMa)(Fe1-b-cTbYc)13-dXe phase and less than 5 Vol % impurities, wherein 0\u2266a\u22660.9, 0\u2266b\u22660.2, 0.05\u2266c\u22660.2, \u22121\u2266d\u2266+1, 0\u2266e\u22663, M is one or more of the elements Ce, Pr and Nd, T is one or more of the elements Co, Ni, Mn and Cr, Y is one or more of the elements Si, Al, As, Ga, Ge, Sn and Sb and X is one or more of the elements H, B, C, N, Li and Be, wherein the intermediate article comprises a permanent magnet.
21. The intermediate article according to claim 20, wherein the composition of the at least one (La1-aMa)(Fe1-b-cTbYc)13-dXe phase exhibits a reversible phase decomposition reaction.
22. The intermediate article according to claim 21, wherein the composition of the at least one (La1-aMa)(Fe1-b-c-TbYc)13-dXe phase exhibits a reversible phase decomposition reaction into at least one Alpha-Fe-based phase and La-rich and Si-rich phases.
23. The intermediate article according to claim 20, wherein the at least one (La1-aMa)(Fe1-b-cTbYc)13-dXe phase is formable by liquid-phase sintering.
24. The intermediate article according to claim 21, wherein a=0, T is Co and Y is Si and e=0.
25. The intermediate article according to claim 24, wherein 0<b\u22660.075 and 0.05<c\u22660.1.
26. The intermediate article according to claim 25, wherein the intermediate article comprises at least one Alpha-Fe-type phase.
27. The intermediate article according to claim 26, wherein the intermediate article comprises greater than 60 vol % of one or more Alpha-Fe-type phases.
28. The intermediate article according to claim 26, wherein the Alpha-Fe-type phase further comprises Co and Si.
29. The intermediate article according to claim 26, wherein the intermediate article further comprises La-rich and Si-rich phases.
30. The intermediate article according to claim 21, wherein the intermediate article comprises a non-magnetic matrix and a plurality of permanently magnetic inclusions distributed in the non-magnetic matrix.
31. The intermediate article according to claim 30, wherein the permanently magnetic inclusions comprise an Alpha-Fe-type phase.
32. The intermediate article according to claim 31, wherein the article has Br>0.35T and HcJ>80 Oe.
33. The intermediate article according to claim 32, wherein the article has Bs>1.0 T.
34. The intermediate article according to claim 33, which exhibits a temperature dependent transition in length or volume at temperatures around the magnetic phase transition temperature Tc, wherein (L10%-L90%)\xd7100L<0.1.
35. An article comprising at least one magnetocalorically active LaFe13-based phase having a magnetic phase transition Tc and less than 5 Vol % impurities, wherein the composition of the at least one LaFe13-based phase exhibits a reversible phase decomposition reaction.
36. The article according to claim 35, wherein the composition of the at least one LaFe13-based phase exhibits a reversible phase decomposition reaction into at least one Alpha-Fe-based phase and La-rich and Si-rich phases.
37. The article according to claim 35 characterized in that the LaFe13-based phase is (La1-aMa)(Fe1-b-cTbYc)13-dXe wherein 0\u2266a\u22660.9, 0\u2266b\u22660.2, 0.05\u2266c\u22660.2, \u22121\u2266d\u2266+1, 0\u2266e\u22663, M is one or more of the elements Ce, Pr and Nd, T is one or more of the elements Co, Ni, Mn and Cr, Y is one or more of the elements Si, Al, As, Ga, Ge, Sn and Sb, and X is one or more of the elements H, B, C, N, Li and Be.
38. The article according to claim 37, wherein the at least one (La1-aMa)(Fe1-b-cTbYc)13-dXe phase is formable by liquid-phase sintering.
39. The article according to claim 37, wherein at least one (La1-aMa)(Fe1-b-cTbYc)13-dXe phase comprises a silicon content such that the reversible phase decomposition reaction provides at least one Alpha-Fe-based phase and La-rich and Si-rich phases.
40. The article according to claim 37, wherein a=0, T is Co and Y is Si and e=0.
41. The article according to claim 40, wherein 0<b\u22660.075 and 0.05<c\u22660.1.
42. The article according to claim 35, which exhibits a temperature dependent transition in length or volume at temperatures around the magnetic phase transition temperature Tc, wherein (L10%-L90%)\xd7100L>0.2.
43. The article according to claim 35, wherein the magnetocalorically active phase exhibits a magnetic phase transition temperature and exhibits a temperature dependent transition in length or volume at temperatures near the magnetic phase transition temperature.
44. The article according to claim 35, wherein the magnetocalorically active phase exhibits a negative linear thermal expansion for increasing temperatures.
45. The article according to 35, wherein the magnetocalorically active phase comprises a NaZn13-type structure.
46. The article according to claim 35, comprising at least two magnetocalorically active phases each having a different magnetic phase transition temperature Tc.
47. An article comprising at least one magnetocalorically active phase having a magnetic phase transition temperature Tc manufactured using the method of claim 1.
48. (canceled)
49. A magnetic heat exchanger comprising the article of claim 35.