1. An integrated circuit, comprising:
a substrate, a surface region of the substrate comprising a contact pad region; and
a passivation layer stack comprising at least one passivation layer, the passivation layer stack formed over the surface region and adjacent to the contact pad region,
wherein, in a portion of the passivation layer stack proximate the contact pad region, an upper portion of the passivation layer stack is removed.
2. The integrated circuit of claim 1, wherein the passivation layer stack comprises:
a first passivation layer formed on the surface region;
a second passivation layer formed on the first passivation layer; and
a third passivation layer formed on the second passivation layer.
3. The integrated circuit of claim 2, wherein the first passivation layer comprises a first nitride layer, wherein the second passivation layer comprises an oxide layer, and wherein the third passivation layer comprises a second nitride layer.
4. The integrated circuit of claim 1, further comprising an adhesion layer disposed on the passivation layer stack.
5. The integrated circuit of claim 4, wherein, in the portion of the passivation layer stack proximate the contact pad region, the passivation layer stack is free from the adhesion layer.
6. The integrated circuit of claim 1, further comprising a reinforcement layer stack formed on an upper surface of the contact pad region, the reinforcement layer stack comprising at least one reinforcement layer.
7. The integrated circuit of claim 6, wherein an upper surface of the reinforcement layer stack is flush with an upper surface of the passivation layer stack.
8. An integrated circuit comprising:
a metallization layer overlying a semiconductor workpiece;
a via surrounded by an electrically insulating region, the via overlying the metallization layer;
a contact pad region overlying the via such that the via electrically couples the metallization layer and the contact pad region;
an electrically insulating layer overlying the electrically insulating region, wherein the contact pad region is embedded in the electrically insulating layer;
a passivation layer overlying the electrically insulating layer but not overlying the contact pad region; and
an adhesion layer overlying portions of the passivation layer that are not proximate the contact pad region, wherein the passivation layer has a first thickness in the portions that underlie the adhesion layer and a second thickness in remaining portions that are proximate the contact pad region, the first thickness being greater than the second thickness.
9. The integrated circuit of claim 8, wherein a top surface of the contact pad region is substantially co-planar with a top surface of the electrically insulating layer.
10. The integrated circuit of claim 9, further comprising a reinforcement layer stack overlying the contact pad region.
11. The integrated circuit of claim 10, wherein the reinforcement layer stack has substantially the second thickness so that a top surface of the reinforcement layer stack is substantially co-planar with the portions of the passivation layer that are adjacent the contact pad region.
12. The integrated circuit of claim 8, wherein the portions of the passivation layer proximate the contact pad region surround the contact pad region by a lateral length of between about 3 \u03bcm to about 8 \u03bcm.
13. The integrated circuit of claim 8, further comprising a reinforcement layer stack overlying the contact pad region.
14. The integrated circuit of claim 13, wherein the contact pad region comprises copper and the reinforcement layer stack comprises a first layer comprising nickel, a second layer comprising palladium and a third layer comprising gold.
15. The integrated circuit of claim 8, wherein the passivation layer comprises a passivation layer stack.
16. The integrated circuit of claim 15, wherein the passivation layer stack comprises a first nitride layer, an oxide layer overlying the first nitride layer, and a second nitride layer overlying the oxide layer.
17. The integrated circuit of claim 16, wherein the first nitride layer and the oxide layer both have a substantially uniform thickness throughout the portions that underlie the adhesion layer and the portions that are proximate the contact pad region.
18. The integrated circuit of claim 8, wherein the adhesion layer comprises an imide layer.
19. The integrated circuit of claim 18, wherein the contact pad region comprises copper and the adhesion layer comprises a photoimide.
20. An integrated circuit comprising:
an electrically insulating layer;
a contact pad region that is embedded in the electrically insulating layer such that a top surface of the contact pad region is substantially co-planar with a top surface of the electrically insulating layer;
a passivation layer stack overlying the electrically insulating layer but not overlying the contact pad region such that edges of the passivation layer stack are adjacent the contact pad region, the passivation layer stack including a first passivation layer and a second passivation layer that overlies the first passivation layer;
an adhesion layer overlying the passivation layer stack but spaced from the contact pad region by a lateral distance of at least one micron; and
a reinforcement layer stack overlying the contact pad region, a top surface of the reinforcement layer stack is substantially co-planar with a top surface of the passivation layer stack.
21. The integrated circuit of claim 20, wherein the adhesion layer is spaced from the contact pad region by a lateral distance of between about 3 \u03bcm to about 8 \u03bcm.
22. The integrated circuit of claim 20, wherein the contact pad region comprises copper and the reinforcement layer stack comprises a first layer comprising nickel, a second layer comprising palladium and a third layer comprising gold.
23. The integrated circuit of claim 20, wherein the passivation layer stack comprises a first nitride layer, an oxide layer overlying the first nitride layer, and a second nitride layer overlying the oxide layer.
24. The integrated circuit of claim 20, wherein the passivation layer stack has a first thickness in portions underlying the adhesion layer and a second thickness in remaining portions, the first thickness being greater than the second thickness.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A system for the circulatory conveyance of media, with two conveying chambers and with a common drive (1), wherein the first conveying chamber constitutes a feed chamber (4) and the second conveying chamber a return chamber (3).
2. The system as claimed in claim 1, defined by a double-diaphragm pump.
3. The system as claimed in claim 1 or 2, defined by a pulsation damper
4. The system as claimed in claim 3, wherein the pulsation damper (5) is integrated into the feed chamber (4).
5. The system as claimed in one of claims 1 to 4, defined by a needle valve (10).
6. The system as claimed in one of claims 1 to 5, wherein at least one line connection is arranged perpendicularly to the feed chamber (4) andor return chamber (3).
7. The system as claimed in one of claims 1 to 6, defined by polyethylene housing parts of the drive (1) andor of the conveying chambers (3,4).
8. The system as claimed in one of claims 1 to 7, defined by a reservoir (13).
9. The system as claimed in one of claims 1 to 8, defined by a four-way valve (12).
10. The system as claimed in claim 9, wherein the four-way valve (12) is designed as a disk valve.
11. A use of a system as claimed in one of claims 1 to 10 for the conveyance of media along a circulatory path between a first and a second container.
12. A use of a system as claimed in one of claims 1 to 10 for regulating the filling-level height in a doctor blade chamber.
13. A use of a system as claimed in claim 9 or 10 for emptying a first and a second container.
14. A method for conveying a medium from a first container into a second container, with the following steps:
operating a pump assembly with a feed chamber and with a discharge chamber by means of a common drive;
sucking the medium out of the first container into a feed chamber;
discharging the medium from the feed chamber into the second container;
sucking the medium out of the second container into a return chamber, and
discharging the medium from the return chamber into the first container.
15. The method as claimed in claim 14, defined by a pulsation damping of the medium.