Author: claimsbot

What is claimed is:

1. A method for detecting analyte in a sample comprising combining the sample with a fluid to form a slurry, contacting the slurry with an immunochromatographic strip, and detecting analyte on the strip, wherein the strip contains a detectable reagent immunoreactive with the analyte.
2. The method of claim 1 wherein the sample is a powdered sample.
3. The method of claim 1 wherein the strip is inserted directly into the slurry.
4. The method of claim 1 wherein the sample is an agricultural product.
5. The method of claim 1 further comprising grinding the sample to produce a powdered sample prior to combining the sample with the fluid.
6. The method of claim 1 wherein the sample is a grain.
7. The method of claim 1 wherein the sample is corn.
8. The method of claim 1 wherein the sample is a genetically modified plant.
9. The method of claim 1 wherein the analyte is a protein.
10. The method of claim 1 wherein the analyte is a recombinant protein.
11. The method of claim 1 wherein the analyte is a recombinant Bacillus thuringiensis protein.
12. The method of claim 11 wherein the analyte is a Cry1Ab protein.
13. The method of claim 11 wherein the analyte is a Cry1Ac protein.
14. A kit for detecting a recombinant protein in a powdered, genetically modified agricultural crop sample comprising a buffer and an immunochromatographic strip.
15. The kit of claim 14 wherein the sample is a grain.
16. The kit of claim 14 wherein the sample is corn.
17. The kit of claim 14 wherein the sample is a genetically modified plant.
18. The kit of claim 14 wherein the protein is a recombinant Bacillus thuringiensis protein.
19. The kit of claim 14 wherein the protein is a Cry1Ab protein.
20. The kit of claim 14 wherein the protein is a Cry1Ac protein.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A displacement measuring cell comprising:
a conductive fluid;
a stationary electrode electrically coupled to the conductive fluid;
a movable electrode electrically and physically coupled to the conductive fluid and configured to move relative to the stationary electrode;
an alternating current (AC) voltage source coupled to the moveable and stationary electrodes to generate a voltage across the cell; and
an electrical property measuring device coupled to the movable and stationary electrodes and configured to measure an electrical property dependent on movement of the movable electrode relative to the stationary electrode.
2. The displacement measuring cell of claim 1, wherein the displacement measuring cell is configured to prevent accumulation of charge between the movable and stationary electrodes.
3. The displacement measuring cell of claim 1, wherein the displacement measuring cell is configured to change a volume of conductive fluid between the stationary and movable electrodes when the movable electrode moves relative to the stationary electrode.
4. The displacement measuring cell of claim 3, wherein the electrical property measuring device is configured to measure changes in an electrical property selected from the group consisting of voltage, current, impedance, and resistance when the volume of conductive fluid changes.
5. The displacement measuring cell of claim 1, wherein the electrical property measuring device is selected from the group consisting of an ohmmeter, an ammeter, a voltmeter, and an analog-to-digital converter.
6. The displacement measuring cell of claim 1, further comprising a processor configured to compute a displacement from an electrical property measurement.
7. The displacement measuring cell of claim 6, wherein the processor is configured to compute at least one of a linear displacement and an angular displacement from the electrical property measurement.
8. The displacement measuring cell of claim 6, wherein the processor is configured to calibrate electrical property measurements to displacements.
9. The displacement measuring cell of claim 1, wherein the stationary electrode comprises a flat plate.
10. The displacement measuring cell of claim 1, further comprising a conductive fluid reservoir.
11. The displacement measuring cell of claim 10, further comprising a pressure controller configured to regulate a pressure of the conductive fluid.
12. The displacement measuring cell of claim 1, wherein the conductive fluid is incompressible.
13. The displacement measuring cell of claim 1, wherein the movable electrode comprises at least one material selected from the group consisting of silver, gallium, conductive ink, and tungsten.
14. The displacement measuring cell of claim 1, wherein the conductive fluid comprises at least one material selected from the group consisting of sodium chloride, potassium chloride, and gallium alloy.
15. The displacement measuring cell of claim 1, wherein the movable electrode is configured to move along a circular path relative to the stationary electrode.
16. The displacement measuring cell of claim 15, further comprising:
a torus-shaped cavity, wherein the torus-shaped cavity contains the circular path;
an end cap, wherein the stationary electrode is coupled to the end cap;
a piston, wherein the movable electrode is coupled to the piston, and wherein the piston and the movable electrode are configured to move along the circular path; and
a bladder coupled to the piston, wherein the bladder is configured to prevent conductive fluid from leaking out of the torus-shaped cavity.
17. The displacement measuring cell of claim 1, further comprising:
an end cap, wherein the stationary electrode is coupled to the end cap;
a piston assembly comprising:
a piston, wherein the movable electrode is coupled to the piston; and
a piston rod, wherein the piston is coupled to a proximal end of the piston rod.
18. The displacement measuring cell of claim 17, wherein the piston comprises a nonconductive material.
19. The displacement measuring cell of claim 17, further comprising a piston extension chamber and a piston retraction chamber.
20. The displacement measuring cell of claim 19, further comprising a pump configured to add additional conductive fluid to the piston extension chamber and remove conductive fluid from the piston retraction chamber.
21. The displacement measuring cell of claim 17, further comprising a contact head coupled to a distal end of the piston rod, wherein the contact head is coupled to a second displacement measuring sensor.
22. The displacement measuring cell of claim 17, further comprising:
a processor configured to control movement of the piston based on computer code stored in a memory; and
an output device configured to output displacement measurements.
23. The displacement measuring cell of claim 17, further comprising:
a piston chamber; and
a positive displacement pump configured to move the piston by adding or removing a quantity of the conductive fluid to the piston chamber, wherein the positive displacement pump is insulated from the conductive fluid.
24. The displacement measuring cell of claim 23, wherein the positive displacement pump comprises plastic to insulate the positive displacement pump from the conductive fluid.
25. The displacement measuring cell of claim 23, further comprising a valve configured to control flow of the conductive fluid to the piston chamber.
26. The displacement measuring cell of claim 17, further comprising a bladder coupled to the piston, wherein the bladder is configured to prevent the conductive fluid from leaking from the displacement measuring cell.
27. The displacement measuring cell of claim 1, further comprising a conformable wall configured to enclose the conductive fluid and the movable and stationary electrodes.
28. The displacement measuring cell of claim 27, further comprising a shear sensor, wherein the conformable wall further comprises a contact surface, wherein the shear sensor is coupled to the contact surface, wherein the shear sensor comprises at least one material selected from the group consisting of a piezoresistive material and a piezoelectric material, wherein the piezoelectric material comprises a polyvinylidene fluoride (PVDF) film, and wherein the shear sensor is perpendicular to the contact surface.
29. The displacement measuring cell of claim 27, wherein the conformable wall comprises silicon.
30. The displacement measuring cell of claim 1, further comprising:
a flexible wall comprising a contact surface;
one or more stationary electrodes in contact with the conductive fluid, wherein the one or more stationary electrodes include the stationary electrode; and
a plurality of movable electrodes coupled to the flexible wall and in contact with the conductive fluid, wherein the plurality of movable electrodes include the movable electrode;
a power source; and
a control circuit configured to selectively couple and decouple the one or more stationary and movable electrodes from the power source.
31. The displacement measuring cell of claim 30, wherein the control circuit comprises a multiplexer.
32. The displacement measuring cell of claim 31, wherein the control circuit is configured to couple at most one of the one or more stationary electrodes and at most one of the plurality of movable electrodes to the power source at any time.
33. The displacement measuring cell of claim 32, wherein the control circuit is configured to enable only directly opposing stationary and movable electrodes at the same time.
34. The displacement measuring cell of claim 30, wherein the control circuit comprises a plurality of transistors corresponding to the plurality of movable electrodes, wherein the source of each transistor is electrically coupled with the power source and the drain of each transistor is electrically coupled with the corresponding movable electrode.
35. The displacement measuring cell of claim 30, further comprising an integrated circuit embedded in the flexible wall, wherein the integrated circuit comprises at least one of the electrical property measuring device, the control circuit, a multiplexer, and a transistor, and wherein the flexible wall comprises a flexible printed circuit board.
36. The displacement measuring cell of claim 35, wherein the integrated circuit comprises carbon nanotubes.
37. The displacement measuring cell of claim 30, wherein the plurality of movable electrodes are embedded in the flexible wall.
38. The displacement measuring cell of claim 37, wherein the plurality of movable electrodes comprise microfluidic channels to enhance electrical coupling with the conductive fluid.
39. The displacement measuring cell of claim 1, further comprising a temperature sensor to measure the temperature of the conductive fluid.
40. The displacement measuring cell of claim 39, wherein the temperature sensor is in contact with at least one of a reservoir, a hydraulic line, the movable electrode, the stationary electrode, a chamber containing the movable and stationary electrodes, and a portion of the chamber adjacent to a contact surface.
41. The displacement measuring cell of claim 1, further comprising a shear sensor selected from the group consisting of a piezoresistive sensor and a polyvinylidene fluoride (PVDF) film sensor, wherein the shear sensor is perpendicular to the movable electrode.
42. A touch-sensitive robotic gripping system comprising:
a first gripping member comprising a first plurality of displacement measuring cells, each displacement measuring cell comprising:
a conductive fluid,
a stationary electrode electrically coupled to the conductive fluid, and
a movable electrode electrically coupled to the conductive fluid and configured to move relative to the stationary electrode;

an alternating current (AC) voltage source coupled to the moveable and stationary electrodes of each displacement measuring cell to generate a voltage across the cell; and
a first electrical property measuring device coupled to the stationary electrode and the movable electrode of each displacement measuring cell and configured to measure a first electrical property of a selected displacement measuring cell, wherein the first electrical property depends on movement of the movable electrode relative to the stationary electrode.
43. The touch-sensitive robotic gripping system of claim 42, further comprising:
a processor configured to receive measurements of the first electrical property and generate a model of an object being sensed by the first plurality of displacement measuring cells; and
a memory in electrical communication with the processor and configured to store the measurements.
44. The touch-sensitive robotic gripping system of claim 43, wherein the processor is configured to:
determine a perimeter of the object from the received measurements; and
generate a three dimensional representation of the object from the determined perimeter.
45. The touch-sensitive robotic gripping system of claim 43, wherein the memory is configured to store a diagram of the object.
46. The touch-sensitive robotic gripping system of claim 45, wherein the processor determines at least one of an orientation and a location of the object being sensed by the first plurality of displacement measuring cells by comparing the model of the object to the diagram of the object.
47. The touch-sensitive robotic gripping system of claim 46, further comprising a plurality of servo motors, wherein the plurality of servo motors control movement of the first gripping member and a second gripping member and the processor instructs the plurality of servo motors to change the orientation of the object so a manufacturing operation may be performed.
48. The touch-sensitive robotic gripping system of claim 47, wherein the processor instructs the plurality of servo motors to change the orientation of the object to match a predetermined orientation.
49. The touch-sensitive robotic gripping system of claim 43, wherein the processor moves the first gripping member relative to a second gripping member such that the stationary electrode does not touch the movable electrode.
50. The touch-sensitive robotic gripping system of claim 42, wherein the first plurality of displacement measuring cells is configured in a plurality of layers, wherein the plurality of layers are mechanically in series with each other, and wherein displacement measuring cells within each layer are mechanically in parallel with each other.
51. The touch-sensitive robotic gripping system of claim 50, wherein the plurality of layers comprises a final layer comprising pistonless displacement measuring cells comprising flexible walls, and wherein each layer other than the final layer comprises displacement measuring cells comprising pistons.
52. The touch-sensitive robotic gripping system of claim 42, further comprising a pressure monitoring device configured to measure a pressure of the conductive fluid.
53. The touch-sensitive robotic gripping system of claim 52, further comprising a processor configured to move the first gripping member relative to a second gripping member based on at least one of a pressure measurement and a first electrical property measurement.
54. The touch-sensitive robotic gripping system of claim 42, further comprising a second gripping member, a third gripping member, and a fourth gripping member, wherein the first gripping member is disposed opposite the second gripping member, the third gripping member is disposed opposite the fourth gripping member, and the first gripping member is perpendicular to the third gripping member.
55. The touch-sensitive robotic gripping system of claim 42, further comprising:
a second gripping member comprising a second plurality of displacement measuring cells, each displacement measuring cell in the second plurality of displacement measuring cells comprising:
a conductive fluid,
a stationary electrode electrically coupled to the conductive fluid, and
a movable electrode electrically coupled to the conductive fluid; and

a second electrical property measuring device configured to measure a second electrical property of an object being sensed while coupled to movable electrodes in at least two different displacement measuring cells.
56. The touch-sensitive robotic gripping system of claim 55, wherein the second electrical property measuring device is configured to measure a capacitance of the object.
57. The touch-sensitive robotic gripping system of claim 56, further comprising a processor configured to compute a dielectric constant andor permittivity of the object.
58. The touch-sensitive robotic gripping system of claim 57, further comprising a memory configured to store dielectric values andor permittivity values for one or more materials, wherein the processor is further configured to determine a material of the object by comparing the dielectric constant andor permittivity of the object to the stored dielectric values andor permittivity values.
59. The touch-sensitive robotic gripping system of claim 57, wherein the second electrical property measuring device is further configured to be calibrated by measuring a capacitance without the object between the movable electrodes.
60. The touch-sensitive robotic gripping system of claim 56, wherein the second electrical property measuring device is configured to measure a plurality of capacitances while electrical power is applied at a corresponding plurality of frequencies andor amplitudes.
61. The touch-sensitive robotic gripping system of claim 55, further comprising a strain gauge, wherein the strain gauge comprises a beam comprising a length-sensitive electrical resistor.
62. The touch-sensitive robotic gripping system of claim 55, further comprising an electrical motor and a lead screw, wherein the electrical motor and the lead screw are configured to move the second gripping member.
63. The touch-sensitive robotic gripping system of claim 55, further comprising a quick-change turret to perform one or more operations on the object.
64. The touch-sensitive robotic gripping system of claim 63, wherein the quick-change turret determines which operation to perform based on at least one of the first electrical property and the second electrical property.
65. The touch-sensitive robotic gripping system of claim 63, wherein the quick-change turret comprises a rotary joint.
66. The touch-sensitive robotic gripping system of claim 55, further comprising a cam guide configured to move the second gripping member.
67. The touch-sensitive robotic gripping system of claim 42, wherein the first gripping member comprises a foot comprising:
the first plurality of displacement measuring cells;
a pressure sensor configured to measure a fluid pressure of the conductive fluid;
one or more shear sensors configured to measure a shear force against a bottom of the foot; and
a processor configured to determine at least one of a robot weight and a robot load from at least one of the fluid pressure and a plurality of displacement measurements from the first plurality of displacement measuring cells,
wherein the first plurality of displacement measuring cells are configured to support the foot and measure the contour of the ground.

1. A method of enabling input into a handheld electronic device, wherein the handheld electronic device comprises one or more processors and one or more memory devices, the method comprising:
storing a core alphabet in a static portion of the one or more memory devices;
storing an extended alphabet in a modifiable portion of the one or more memory devices;
detecting a first set of input-key selections;
producing for selection a prefix object based on the first set of input-key selections, wherein the prefix object comprises at least one character from the extended alphabet;
detecting an additional input-key selection; and
producing for selection an artificial variant comprising the prefix object followed by an additional character, wherein the additional character is selected by seeking a character from the core alphabet based on the additional input-key selection.
2. The method of claim 1, wherein the at least one character from the extended alphabet is a diacritical character.
3. The method of claim 1, wherein a corresponding word object does not exist for the artificial variant.
4. The method of claim 1, wherein the additional character is selected from a set of characters in the core alphabet assigned to a key corresponding to the additional input-key selection.
5. The method of claim 4, wherein a character in the extended alphabet is also assigned to the key corresponding to the additional input-key selection.
6. A handheld electronic device comprising:
a display
a processor apparatus comprising one or more processors and one or more memory devices, the one or more memory devices having stored instructions which, when executed on the one or more processors, cause the handheld electronic device to perform operations comprising:
storing a core alphabet in a static portion of the one or more memory devices;
storing an extended alphabet in a modifiable portion of the one or more memory devices;
detecting a first set of input-key selections;
producing for selection a prefix object based on the first set of input-key selections, wherein the prefix object comprises at least one character from the extended alphabet;
detecting an additional input-key selection; and
producing for selection an artificial variant comprising the prefix object followed by an additional character, wherein the additional character is selected by seeking a character from the core alphabet based on the additional input-key selection.
7. The handheld electronic device of claim 6, wherein the at least one character from the extended alphabet is a diacritical character.
8. The handheld electronic device of claim 6, wherein a corresponding word object does not exist for the artificial variant.
9. The handheld electronic device of claim 6, wherein the additional character is selected from a set of characters in the core alphabet assigned to a key corresponding to the additional input-key selection.
10. The handheld electronic device of claim 9, wherein a character in the extended alphabet is also assigned to the key corresponding to the additional input-key selection.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A semiconductor memory device comprising:
a group of address pads; and
an input circuit configured to receive a first address from the address pads at a first transition of an external clock signal and a second address from the address pads at a second transition of the external clock signal.
2. The semiconductor memory device of claim 1, wherein the first and second addresses constitute either one of row and column addresses for selecting memory cells.
3. The semiconductor memory device of claim 1, wherein the first transition is a high-low transition of the external clock signal and the second transition is a low-high transition of the external clock signal.
4. The semiconductor memory device of claim 1, further comprising an internal clock generator circuit for generating a first internal clock signal at the first transition of the external clock signal and a second internal clock signal at the second transition of the external clock signal.
5. The semiconductor memory device of claim 4, wherein the input circuit receives the first address from the address pads in response to the first internal clock signal during a test mode of operation.
6. The semiconductor memory device of claim 4, wherein the input circuit receives the second address from the address pads in response to the second internal clock signal during test and normal modes of operation.
7. The semiconductor memory device of claim 6, further comprising another group of address pads.
8. The semiconductor memory device of claim 7, wherein the input circuit receives the first address from the other group of address pads in response to the first internal clock signal during a normal mode of operation.
9. The semiconductor memory device of claim 4, wherein the input circuit comprises:
a first switch part for receiving the first address from the one group of address pads in response to the first internal clock signal during a test mode of operation; and
a second switch part for receiving the second address from the one group of address pads in response to the second internal clock signal during test and normal modes of operation.
10. The semiconductor memory device of claim 7, wherein the input circuit comprises:
a first switch part for receiving the first address from the one group of address pads in response to the first internal clock signal during a test mode of operation; and
a second switch part for receiving the second address from the one group of address pads in response to the second internal clock signal during test and normal modes of operation,
wherein the first switch part receives the first address from the other group of address pads in response to the second internal address during a normal mode of operation.
11. A semiconductor memory device comprising:
a plurality of address pads for receiving external address signals;
an internal clock generator circuit configured to generate a first internal clock signal a second internal clock signal at both edges of an external clock signal, respectively;
a first switch circuit configured to receive first address signals from a part of the address pads in response to the first internal clock signal; and
a second switch circuit configured to receive second address signals from the part of the address pads in response to the second internal clock signal.
12. The semiconductor memory device of claim 11, wherein the first and second address signals constitute either one of row and column addresses for selecting memory cells.
13. The semiconductor memory device of claim 11, wherein the first switch circuit receives the first address signals in response to the first internal clock signal during a test mode of operation.
14. The semiconductor memory device of claim 11, wherein the second switch circuit receives the second address signals in response to the second internal clock signals during test and normal modes of operation.
15. The semiconductor memory device of claim 13, wherein the first switch circuit receives the first address signals from the other of the address pads in response to the second clock signal during a normal mode of operation.
16. The semiconductor memory device of claim 11, wherein the first switch circuit receives the first address signals before an external command is received, during a test mode of operation.
17. The semiconductor memory device of claim 16, wherein the external command is one selected from a group of an active command, a read command, and a write command.