1460762163-302d69c8-9009-48a6-827e-f443ecdaa210

1. A radioterminal comprising:
a transceiver that is configured for space-based communications and for terrestrial wireless communications;
a hands-free interface; and
a satellitehands-free interlock that is configured to prevent the transceiver from transmitting space-based communications unless the hands-free interface is activated.
2. A radioterminal according to claim 1 wherein the hands-free interface comprises a coupling for a remote earpiece andor a speakerphone interface.
3. A radioterminal according to claim 1 further comprising:
a hand-held interface, wherein the interlock is further configured to prevent the transceiver from transmitting space-based communications when the hand-held interface is activated.
4. A radioterminal according to claim 3 wherein the hand-held interface comprises a built in speaker configured to provide audio output corresponding to wireless communications received by the transceiver andor by another device that is coupled to the radioterminal.
5. A radioterminal according to claim 3 wherein the satellitehands-free interlock is configured to provide a user notification to activate the hands-free interface in response to a request to transmit space-based communications when the hand-held interface is activated.
6. A radioterminal according to claim 5 wherein the satellitehands-free interlock is further configured to enable the transceiver to transmit space-based communications for a period of time after the request to transmit space-based communications without activation of the hands-free interface.
7. A radioterminal according to claim 3 wherein the satellitehands-free interlock is further configured to allow the transceiver to transmit terrestrial communications when the hand-held interface is activated.
8. A method of operating a radioterminal including a transceiver configured for space-based communications and for terrestrial wireless communications, and a hands-free interface, the method comprising:
allowing the transceiver to transmit terrestrial wireless communications when the hands-free interface is not activated; and
preventing the transceiver from transmitting space-based communications unless the hands-free interface is activated.
9. A method according to claim 8 wherein the hands-free interface comprises a coupling for a remote earpiece andor a speakerphone interface.
10. A method according to claim 8 further comprising:
preventing the transceiver from transmitting space-based communications when a hand-held interface is activated.
11. A method according to claim 10 wherein the hand-held interface comprises a built in speaker configured to provide audio output corresponding to wireless communications received by the transceiver andor by another device that is coupled to the radioterminal when the hand-held interface is activated.
12. A method according to claim 10 further comprising:
providing a user notification to activate the hands-free interface in response to a request to transmit space-based communications when the hand-held interface is activated.
13. A method according to claim 12 further comprising:
enabling the transceiver to transmit the space-based communications for a period of time after the request to transmit the space-based communications without activation of the hands-free interface when the hand-held interface is activated.
14. A method according to claim 10 further comprising:
allowing the transceiver to transmit terrestrial communications when the hand-held interface is activated.
15. A radioterminal comprising:
a transceiver that is configured for space-based communications and for terrestrial wireless communications;
an antenna that is selectively configurable in at least a low profile or a high profile position andor orientation; and
a satellite interlock that is configured to prevent the transceiver from transmitting communications at a high power andor EIRP that is greater than or equal to a threshold responsive to the antenna being configured in the low profile position andor orientation, to allow the transceiver to transmit communications at the high power andor EIRP responsive to the antenna being configured in the high profile position andor orientation, and to allow the transceiver to transmit communications at a low power andor EIRP that is less than or equal to a threshold independent of the antenna’s position andor orientation.
16. A radioterminal comprising:
a transceiver that is configured for space-based communications and for terrestrial wireless communications;
a user interface that is selectively configurable in at least speakerphone mode, push-to-send mode andor push-to-talk mode or next to a user’s ear mode; and
a satellite interlock that is configured to prevent the transceiver from transmitting communications at a power andor EIRP that is greater than or equal to a threshold responsive to the user interface is being configured in next to the user’s ear mode.
17. A radioterminal according to claim 15 wherein the high profile position andor orientation of the antenna maintains a distance from the radioterminal andor a user’s head that is greater than a distance maintained by the low profile position andor orientation of the antenna from the radioterminal andor the user’s head.
18. A radioterminal according to claim 1 wherein the transceiver is configured to transmit high power communications at a power andor EIRP that is greater than or equal to a high power threshold and to transmit low power communications at a power andor EIRP that is less than or equal to a low power threshold.
19. A radioterminal according to claim 1 wherein the transceiver includes at least one amplifier configured to amplify low power communications for transmission at a power andor EIRP that is less than or equal to a low power threshold and to amplify high power communications for transmission at a power andor EIRP that is greater than or equal to a high power threshold.
20. A radioterminal according to claim 1 wherein the interlock is further configured to enable the transceiver to transmit high power communications at a power andor EIRP that is greater than or equal to a high power threshold when the hands-free interface is activated.
21. A radioterminal according to claim 1 wherein the hands-free interface comprises a coupling for a remote earpiece andor speaker.
22. A radioterminal according to claim 21 wherein the coupling for the remote earpiece andor speaker comprises a tethered andor an untethered coupling.
23. A radioterminal according to claim 21 wherein the coupling for the remote earpiece andor speaker comprises an interface for a cradle configured to receive the radioterminal andor to couple the radioterminal to a remote loudspeaker.
24. A radioterminal according to claim 1 wherein the hands-free interface comprises a speakerphone interface.
25. A radioterminal according to claim 1 further comprising:
an interface for a companion device, wherein the interface is configured to provide communications from the radioterminal to the companion device andor to provide communications from the companion device to the radioterminal.
26. A radioterminal according to claim 25 wherein the interface comprises a wireless interface andor a wired interface.
27. A radioterminal according to claim 25 further comprising:
a radioterminal antenna coupled to the transceiver, wherein the companion device includes a companion antenna, and wherein a gain of the companion antenna is greater than a gain of the radioterminal antenna.
28. A radioterminal according to claim 25 wherein the transceiver includes a transmission amplifier and a low noise amplifier inside the radioterminal, wherein the companion device includes a transmission amplifier andor a low noise amplifier inside the companion device, and wherein a power output of the transmission amplifier inside the companion device is greater than a power output of the transmission amplifier inside the radioterminal andor a noise figure of the low noise amplifier inside the companion device is less than or equal to a noise figure of the low noise amplifier inside the radioterminal.
29. A radioterminal according to claim 1 further comprising a hand-held interface configured to provide communications received by the transceiver andor by a device that is wirelessly andor non-wirelessly coupled to the radioterminal.
30. A radioterminal according to claim 29 wherein responsive to a request to transmit high power communications at a power andor EIRP that is greater than or equal to a high power threshold when the hand-held interface is active, the interlock is configured to provide a user notification to activate the hands-free interface.
31. A radioterminal according to claim 30 wherein the interlock is further configured to enable the transceiver to transmit the high power communications responsive to activation of the hands-free interface.
32. A radioterminal according to claim 30 wherein the interlock is further configured to enable the transceiver to transmit the high power communications for a period of time after the request to transmit the high power communications and before activation of the hands-free interface when the hand-held interface is activated.
33. A radioterminal according to claim 25 wherein responsive to a request to transmit high power communications at a power andor EIRP that is greater than or equal to a high power threshold andor to receive space-based communications, the interlock is configured to provide a user notification to activate the interface for the companion device.
34. A radioterminal according to claim 33 wherein the interlock is further configured to provide communications through the interface to the companion device andor to provide communications through the interface to the radioterminal from the companion device responsive to activating the interface for the companion device.
35. A radioterminal according to claim 33 wherein the interlock is further configured to enable the transceiver for a period of time to transmit the high power communications after the user notification to activate the interface for the companion device and before activation of the interface for the companion device.
36. A radioterminal according to claim 1 wherein the interlock is further configured to allow the transceiver to transmit low power communications at a power andor EIRP that is less than or equal to the low power threshold when the hands-free interface is activated.
37. A method according to claim 8 wherein the transceiver is configured to transmit the space-based communications at a power andor EIRP that is greater than or equal to a high power threshold and to transmit terrestrial wireless communications at a power andor EIRP that is less than or equal to a low power threshold.
38. A method according to claim 8 wherein the transceiver includes at least one amplifier configured to amplify the terrestrial wireless communications and to amplify the space-based communications, and wherein preventing the transceiver from transmitting the space-based communications unless the hands-free interface is activated comprises disabling andor limiting at least one amplifier unless the hands-free interface is activated.
39. A method according to claim 8 wherein the hands-free interface is coupled to the transceiver, the method further comprising:
enabling the transceiver to transmit high power communications at a power andor EIRP that is greater than or equal to a high power threshold when the hands-free interface is activated.
40. A method according to claim 8 wherein the hands-free interface comprises a coupling for a remote earpiece andor speaker.
41. A method according to claim 8 wherein the hands-free interface comprises a speakerphone interface.
42. A method according to claim 8 wherein the radioterminal further includes an interface for a companion device, the method further comprising:
providing communications from the radioterminal through the interface to the companion device andor providing communications from the companion device through the interface to the radioterminal.
43. A method according to claim 8 wherein the radioterminal further includes a hand-held interface comprising a built-in speaker configured to provide audio output corresponding to wireless communications received by the transceiver andor by another device that is coupled to the radioterminal.
44. A method according to claim 8 wherein the hands-free interface is coupled to the transceiver, the method further comprising:
providing a user notification to activate the hands-free interface responsive to a request to transmit high power communications.
45. A method according to claim 44 further comprising:
enabling the transceiver to transmit the high power communications responsive to activation of the hands-free interface.
46. A method according to claim 44 further comprising:
after the request to transmit the high power communications and before activation of the hands-free interface, enabling the transceiver to transmit the high power communications for a period of time.
47. A method according to claim 8 wherein the radioterminal includes an interface for a companion device, the method further comprising:
providing a user notification to activate the interface for the companion device responsive to a request to transmit high power communications.
48. A method according to claim 47 further comprising:
providing communications from the radioterminal through the interface to the companion device andor providing communications from the companion device through the interface to the radioterminal responsive to activating the interface for the companion device.
49. A method according to claim 47 further comprising:
enabling the transceiver to transmit the high power communications for a period of time after the request to transmit high power communications and before activation of the interface for the companion device.
50. A radioterminal according to claim 27 wherein the radioterminal antenna comprises a substantially linearly polarized andor circularly polarized element and wherein the companion antenna comprises a substantially circularly polarized element.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for identifying and treating tissue, the method comprising the steps of:
providing an electrosurgical treatment device including an electrode assembly configured to measure one or more electrical properties of a target tissue;
applying an electrical signal having at least one of a range of frequencies and a range of wave configurations to the target tissue;
measuring the one or more electrical properties of the target tissue in response to the electrical signal;
comparing values of the measured electrical properties of the target tissue against values of electrical properties of known tissue types;
identifying a type of the target tissue based on the comparison;
adjusting at least one of the range of frequencies and the range of wave configurations of the electrical signal based on the identified tissue type;
applying the adjusted electrical signal to the target tissue;
measuring the one or more electrical properties of the target tissue in response to the adjusted electrical signal;
comparing values of the measured electrical properties of the target tissue type against values of electrical properties of the tissue type;
identifying a condition of the target tissue based on the comparison;
adjusting an energy delivery configuration of the electrosurgical treatment device to the type and condition of the target tissue; and
activating the electrosurgical treatment device to perform a treatment on the target tissue.
2. A method according to claim 1, wherein the electrode assembly is mounted on a distal end of the electrosurgical treatment device and includes a plurality of electrodes.
3. A method according to claim 1, further including the steps of measuring at least one of the electrical properties of the target tissue following the treatment; and determining the effectiveness of the treatment.
4. A method according to claim 1, wherein the electrode assembly includes a base having an electrode extending coaxially therethrough.
5. A method according to claim 4, where the coaxially extending electrode is operably connected to a high frequency generator.
6. A method according to claim 5, wherein the high frequency generator is capable of generating a frequency between 30 MHz and 30 GHz.

1460762155-b9701c28-91df-401e-a3ce-0f711b20aa27

1. A method comprising:
polishing at least one aperture of a ceramic article, wherein the ceramic article is a component for a semiconductor processing chamber, wherein the polishing is based on flowing an abrasive media through the at least one aperture of the ceramic article, and wherein the abrasive media comprises a polymer base and a plurality of abrasive particles.
2. The method of claim 1, further comprising:
drilling through the ceramic article to produce the at least one aperture; and
reaming the at least one aperture with a reaming device to increase a diameter of the at least one aperture prior to performing the polishing.
3. The method of claim 2, wherein a first grit size of the drill is courser than a second grit size of the reaming device, wherein the first grit size of the drill is between about 100 grit and about 150 grit, and wherein the second grit size of the reaming device is between about 400 grit and about 800 grit.
4. The method of claim 1, further comprising:
periodically adjusting a flow direction of the abrasive media through the at least one aperture over a time duration, wherein a length of the time duration is between about 20 minutes and about 60 minutes.
5. The method of claim 1, wherein a diameter of the at least one aperture is between about 0.01 inches and about 0.1 inches.
6. The method of claim 1, wherein the ceramic article comprises at least one of Al2O3, AlN, SiO2, Y3Al5O12, Y4Al2O9, Y2O3, Er2O3, Gd2O3, Er3Al5O12, Gd3Al5O12, YF3, Nd2O3, Er4Al2O9, ErAlO3, Gd4Al2O9, GdAlO3, Nd3Al5O12, Nd4Al2O9, NdAlO3, or a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3\u2014ZrO2.
7. The method of claim 1, wherein the plurality of abrasive particles comprises at least one of silicon carbide, diamond, or boron nitride.
8. The method of claim 1, wherein an average size of each of the plurality of abrasive particles is between 5 micrometers and 100 micrometers.
9. The method of claim 1, wherein the abrasive media further comprises an oil-based plasticizer.
10. The method of claim 1, wherein a viscosity of the abrasive media is between about 150,000 cP and about 750,000 cP.
11. A system comprising:
a mounting stage;
a clamp; and
a pump fluidly coupled to the mounting stage by a ceramic article disposed between the mounting stage and the clamp, wherein an abrasive media flow path from the mounting stage to the clamp is defined by an aperture of the ceramic article, and wherein the pump is to flow the abrasive media through the aperture to polish the aperture.
12. The system of claim 11, wherein the clamp is to apply a clamping pressure of between about 1,500 psi and about 2,500 psi to the ceramic article.
13. The system of claim 11, further comprising:
a rubber pad disposed between a surface of the ceramic article and the clamp.
14. The system of claim 11, wherein:
the abrasive media comprises a plurality of abrasive particles,
the plurality of abrasive particles comprises at least one of silicon carbide, diamond, or boron nitride, and
an average size of each of the plurality of abrasive particles is approximately 5 micrometers to 100 micrometers.
15. A chamber component comprising:
a ceramic body; and
a plurality of polished apertures in the ceramic body, wherein a roughness of the plurality of polished apertures is less than 32 \u03bcin.
16. The chamber component of claim 15, wherein at least one of the plurality of polished apertures has a first diameter at a first region and a second diameter at a second region, wherein the second diameter is less than the first diameter.
17. The chamber component of claim 15, wherein at least one of the plurality of polished apertures comprises at least one bend within the chamber component.
18. The chamber component of claim 15, wherein an opening of at least one of the plurality of apertures has a rounded edge.
19. The chamber component of claim 15, wherein the ceramic body comprises at least one of Al2O3, AlN, SiO2, Y3Al5O12, Y4Al2O9, Y2O3, Er2O3, Gd2O3, Er3Al5O12, Gd3Al5O12, YF3, Nd2O3, Er4Al2O9, ErAlO3, Gd4Al2O9, GdAlO3, Nd3Al5O12, Nd4Al2O9, NdAlO3, or a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3\u2014ZrO2.
20. The chamber component of claim 15, wherein the chamber component comprises one of a showerhead gas distribution plate or a nozzle.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for making a light emitting diode structure, the method comprising:
providing, on a substrate, a semiconductor material that is configured to emit light about a central wavelength \u03bb in response to application of a potential across an active region bracketed by both an n-doped layer and a p-doped layer;
forming a non-perforated dielectric material layer region upon the p-doped layer of the semiconductor material, the non-perforated dielectric material layer region covering only a portion of the p-doped layer;
forming at least one Distributed Bragg Reflector (DBR) pair upon the dielectric material layer region;
forming a bonding pad structure, for receiving a wire bond during a wire bonding operation, over the dielectric material layer region and the at least one DBR pair, and wherein the bonding pad structure is in ohmic contact with the p-doped layer of the semiconductor material through a transparent ohmic contact layer.
2. The method as recited in claim 1, wherein the bonding pad structure comprises a metallic layer.
3. The method as recited in claim 1, wherein the semiconductor material comprises GaN.
4. The method as recited in claim 1, wherein the dielectric material comprises silicon dioxide.
5. The method as recited in claim 1, wherein the dielectric material comprises at least one material selected from the group consisting of:
silicon dioxide;
silicon monoxide;
MgF2; and
siloxane polymers.
6. The method as recited in claim 1, wherein the dielectric material has a thickness of approximately 1.75 \u03bb.
7. A method of fabricating a light emitting diode structure comprising:
forming a first portion of an electrode on a planar surface of a semiconductor material, the electrode for use in supplying a voltage potential across a light emitting region formed in the semiconductor, the first portion of the electrode for receiving a wire bond during a wire bonding operation, the first portion of the electrode formed over both a non-perforated transparent dielectric material layer and at least one Distributed Bragg Reflector (DBR) layer pair; and
forming a second portion of the electrode in ohmic contact with the planar surface of the semiconductor material, and wherein the relative disposition of the first portion of the electrode, the second portion of the electrode and the non-perforated transparent dielectric layer provide that current resulting from the application of the voltage potential flows around, and not through, the non-perforated dielectric material layer into the planar surface of the semiconductor material.
8. The method as recited in claim 7, wherein each layer of the DBR pair is optically transmissive and has a different index of refraction with respect to each other layer.
9. The method as recited in claim 7, wherein each layer of the DBR pair has a thickness that is a multiple of approximately \xbc \u03bb.
10. The method as recited in claim 7, wherein the non-perforated dielectric layer and the electrode make physical contact to the planar surface of the semiconductor material via an ITO layer.
11. The method as recited in claim 7, wherein the electrode makes electrical contact to the semiconductor via an ITO layer.
12. A device comprising:
means for emitting light, the means for emitting light comprising a generally planar semiconductor material with a first side exposing both a p-doped semiconductor layer surface and an n-doped semiconductor layer surface that extends under the p-doped semiconductor layer, and which collectively bracket an active region for emitting light from the p-doped semiconductor layer surface;
means for providing a bonding location for a wire bond to be used in applying a potential to the p-doped semiconductor layer surface;
means for providing a continuous region of electrical insulation formed upon the means for emitting light;
at least one Distributed Bragg Reflector (DBR) pair formed upon the means for providing a continuous region of electrical insulation; and
wherein the means for providing a bonding location for the wire bond is physically separated from the means for emitting light by the continuous region of electrical insulation, and ohmic contact between the bonding location for the wire bond and the means for emitting light is provided by an ohmic contact means comprising a layer of a transparent ohmic conductor material contacting both the means for emitting light and the means for providing the bonding location.