Author: claimsbot

1. A pressurized flush system comprising:
a pressure water vessel, having an inlet and an outlet;
an infill valve;
an open valve; and
a flush valve disposed within said pressure water vessel and in fluid communication with said infill valve and said open valve, said flush valve comprising:
a hollow valve body;
cooperating pistons controlling water discharge from the water vessel outlet, said cooperating pistons being disposed within said hollow valve body; and
a partition disposed within the valve body, said partition having a hole therethrough and said cooperating piston includes a big piston disposed below said partition and a small piston disposed above said partition within an upper cylinder sleeve, said small piston having a bottom engaging the partition hole.
2. The system according to claim 1 further comprising a water release tube disposed inside the flush valve and located in a middle of the upper cylinder sleeve and extending to the water vessel outlet, a check valve being disposed inside the water release tube.
3. The system according to claim 1 wherein said big piston, small piston, upper cylinder sleeve, and partition divide the valve body into a lower cavity, an upper cavity and a normal pressure cavity.
4. The system according to claim 3 further comprises a normal pressure opening disposed in said normal pressure cavity and said small piston include an opening in the bottom thereof communicating with said upper cavity.
5. The system according to claim 4 wherein said open valve includes an open valve body with an inlet connected with an outlet of the flush valve, said open valve body includes a water release hole connected to the normal pressure cavity, and said open valve includes a spring loaded handle having a side covering and sealing the open valve body inlet.
6. The system according to claim 1 further comprising a combination valve disposed between the infill valve and the water vessel inlet, said combination valve including a pressure-controlled valve disposed in a manner shutting of the vessel inlet when the water vessel is discharging water and an air-in device disposed in a manner filling air into the water vessel when water is filled into the water vessel.
7. The system according to claim 6 wherein said pressure-controlled valve includes an infill cavity, a water pressure cavity, an infill piston and a pressure-controlled spring, the infill cavity being connected respectively with the inlet duct and the outlet duct of the combination valve; the water pressure cavity being connected with the outlet of the combination valve.
8. The system according to claim 7 further comprises a through hole partition disposed between the infill cavity and the water pressure cavity and the infill piston is disposed inside the water pressure cavity on which is set a piston rod, which goes through the partition through hole and reaches into an outlet duct with the push of the pressure-controlled spring with and end forming a seal with the outlet duct.
9. The system according to claim 8 wherein a spout is disposed inside the outlet duct of the combination valve, the spout having a necked bottom and an air-in ball valve is disposed in a ring shaped cavity between the outlet duct and the spout, the ball valve forming an air-in device with the spout.
10. The system according to claim 6 further comprising an anti-siphon ball valve disposed in a combination valve inlet duct, the anti-siphon ball valve opening when the pressure in a water supply line is equal or lower than atmospheric pressure.
11. The system according to claim 10 further comprising a check ball valve disposed in a channel between the connecting valve inlet duct and a combination valve outlet duct, the check ball valve shutting off when pressure in the combination valve outlet duct is higher than pressure in the combination valve inlet duct.
12. A pressurized flush system comprising:
a pressure water vessel, having an inlet and an outlet;
an infill valve;
an open valve;
a flush valve disposed within said pressure water vessel and in fluid communication with said infill valve and said open valve, said flush valve comprising:
a hollow valve body;
cooperating pistons controlling water discharge from the water vessel outlet, said cooperating pistons being disposed within said hollow valve body; and
an outer flank surrounding the vessel outlet and defining an annulus outlet therebetween, the flank including a normal pressure water release hole and a ring shaped check valve is disposed in said annulus outlet below the normal pressure water release hole.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A device for the capture and payout of an in sink water spray hose, said spray hose having a first end connected to a water service line and a second end connected to an in-sink spray nozzle, said device being positioned between said first and second ends and comprising a clamp for releasably attached said device to said spray hose proximate the first end thereof, a housing having a length and width and a substantially open top and a weighted pulley wheel rotatable within said housing and movable along said length, said weighted pulley being characterized as being freewheeling as to not be appended to side walls of said housing, having a diameter greater than said width of said container and having a track diameter smaller than said weighted pulley diameter to substantially prevent said spray hose from dislodging from said weighted pulley once seated thereon.
2. The device of claim 1 wherein said weighted pulley is of sufficient means as to urge said spray hose into said container.
3. The device of claim 1 further comprising a plurality of rollers in spaced apart relationship positioned across said substantially open top for guiding said spray hose from and to the container of said housing.
4. The device of claim 3 wherein said plurality of rollers are selectively removable from said housing.
5. The device of claim 1 further comprising a plurality of rollers positioned within said housing and oriented substantially parallel to said width for reducing friction of said spray hose as it moves within said housing.
6. The device of claim 1 wherein said housing is sized such that the distance between the point of connection of said water line and said first end of said spray hose to said water nozzle is approximately equal to the maximum length of spray hose residing within said housing.

1. A method for treating common acne, comedones, polymorphous acne, nodulocystic acne, acne conglobata or secondary acne afflicting the skin of an individual in need of such treatment, comprising topically administering to said individual an effective amount of a pharmaceutical composition which consists essentially of: (a) 0.3% by weight of 6-3-(1-adamantyl)-4-methoxyphenyl-2-naphthanoic acid (adapalene) or salt thereof; (b) one or more ingredients selected from the group consisting of carbomer 940, carbomer 934, propylene glycol, perhydrosqualene, cyclomethicone, PEG-20 methyl glucose sesquistearate and methyl glucose sesquistearate; (c) water; and, (d) optionally, one or more additives selected from the group consisting of wetting agents, pH regulators, osmotic pressure modifiers, emulsifiers, UV-A and UV-B screening agents and antioxidants; said composition being a gel or a cream.
2. The method according to claim 1, wherein said individual is afflicted with common acne.
3. The method according to claim 2, wherein the common acne is of moderate to moderately severe intensity.
4. A method for treating common acne, comedones, polymorphous acne, nodulocystic acne, acne conglobata or secondary acne afflicting the skin of an individual in need of such treatment, comprising topically administering to said individual an effective amount of a pharmaceutical composition which is a gel consisting essentially of 0.3% by weight of adapalene, carbomer 940, disodium edentate, methyl paraben, poloxamer 124, propylene glycol, sodium hydroxide and purified water.
5. The method according to claim 4, wherein said individual is afflicted with common acne.
6. A regime or regimen for treating common acne, comedones, polymorphous acne, nodulocystic acne, acne conglobata or secondary acne afflicting the skin of an individual in need of treatment, comprising topically administering to such individual an effective amount of a pharmaceutical composition which consists essentially of: 0.3% by weight of 6-3-(1-adamantyl)-4-methoxyphenyl-2-naphthanoic acid (adapalene) or salt thereof; one or more ingredients selected from the group consisting of carbomer 940, carbomer 934, propylene glycol, perhydrosqualene, cyclomethicone, PEG-20 methyl glucose sesquistearate, methyl glucose sesquistearate, water, alcohol and polyethylene glycol; and optionally, one or more additives selected from the group consisting of wetting agents, flavor enhancers, preservatives, stabilizers, moisture regulators, pH regulators, osmotic pressure modifiers, emulsifiers, UV-A and UV-B screening agents and antioxidants.
7. The regime or regimen according to claim 6, wherein said individual is afflicted with common acne.
8. The regime or regimen according to claim 7, wherein the common acne is of moderate to moderately severe intensity.
9. The regime or regimen according to claim 6, wherein the composition is a gel.
10. The regime or regimen according to claim 8, wherein the composition is a gel.
11. The regime or regimen according to claim 8, wherein the composition is a gel.
12. A method for treating common acne, comedones, polymorphous acne, nodulocystic acne, acne conglobata or secondary acne afflicting the skin of an individual in need of such treatment, consisting essentially of topically administering to said individual an effective amount of a pharmaceutical composition which consists essentially of: (a) 0.3% by weight of 6-3-(1-adamantyl)-4-methoxyphenyl-2-naphthanoic acid (adapalene) or salt thereof; (b) one or more ingredients selected from the group consisting of carbomer 940, carbomer 934, propylene glycol, perhydrosqualene, cyclomethicone, PEG-20 methyl glucose sesquistearate and methyl glucose sesquistearate; (c) water; and, (d) optionally, one or more additives selected from the group consisting of wetting agents, pH regulators, osmotic pressure modifiers, emulsifiers, UV-A and UV-B screening agents and antioxidants; said composition being a gel or a cream.
13. The method according to claim 12, wherein said individual is afflicted with common acne.
14. The method according to claim 13, wherein the common acne is of moderate to moderately severe intensity.
15. The method according to claim 12, wherein the composition is a gel consisting essentially of adapalene, carbomer 940, disodium edetate, methyl paraben, poloxamer 124, propylene glycol, sodium hydroxide and purified water.
16. The method according to claim 15, wherein said individual is afflicted with common acne.
17. A regime or regimen for treating common acne, comedones, polymorphous acne, nodulocystic acne, acne conglobata or secondary acne afflicting the skin of an individual in need of treatment, consisting essentially of topically administering to such individual an effective amount of a pharmaceutical composition which consists essentially of: 0.3% by weight of 6-3-(1-adamantyl)-4-methoxyphenyl-2-naphthanoic acid (adapalene) or salt thereof; one or more ingredients selected from the group consisting of carbomer 940, carbomer 934, propylene glycol, perhydrosqualene, cyclomethicone, PEG-20 methyl glucose sesquistearate, methyl glucose sesquistearate, water, alcohol and polyethylene glycol; and optionally, one or more additives selected from the group consisting of wetting agents, flavor enhancers, preservatives, stabilizers, moisture regulators, pH regulators, osmotic pressure modifiers, emulsifiers, UV-A and UV-B screening agents and antioxidants.
18. The regime or regimen according to claim 17, wherein said individual is afflicted with common acne.
19. The regime or regimen according to claim 18, wherein the common acne is of moderate to moderately severe intensity.
20. The regime or regimen according to claim 17, wherein the composition is a gel.
21. The regime or regimen according to claim 18, wherein the composition is a gel.
22. The regime or regimen according to claim 19, wherein the composition is a gel.
23. A method for treating common acne, comedones, polymorphous acne, nodulocystic acne, acne conglobata or secondary acne afflicting the skin of an individual in need of such treatment, comprising topically administering to said individual an effective amount of a pharmaceutical composition which comprises 0.3% by weight of 6-3-(1-adamantyl)-4-methoxyphenyl-2-naphthanoic acid (adapalene) or salt thereof, as the sole active anti-acne agent, formulated into a pharmaceutically acceptable medium therefor, said composition being a gel or a cream.
24. The method according to claim 23, wherein said individual is afflicted with common acne.
25. The method according to claim 23, wherein the common acne is of moderate to moderately severe intensity.
26. The method according to claim 23, wherein the composition is a gel comprising adapalene, carbomer 940, disodium edetate, methyl paraben, poloxamer 124, propylene glycol, sodium hydroxide and purified water.
27. The method according to claim 24, wherein the composition is a gel comprising adapalene, carbomer 940, disodium edentate, methyl paraben, poloxamer 124, propylene glycol, sodium hydroxide and purified water.
28. A regime or regimen for treating common acne, comedones, polymorphous acne, nodulocystic acne, acne conglobata or secondary acne afflicting the skin of an individual in need of treatment, comprising topically administering to such individual an effective amount of a pharmaceutical composition which comprises 0.3% by weight of 6-3-(1-adamantyl)-4-methoxyphenyl-2-naphthanoic acid (adapalene) or salt thereof, as the sole active anti-acne agent, formulated into a pharmaceutically acceptable medium therefor.
29. The regime or regimen according to claim 28, wherein said individual is afflicted with common acne.
30. The regime or regimen according to claim 29, wherein the common acne is of moderate to moderately severe intensity.
31. The regime or regimen according to claim 28, wherein the composition is a gel.
32. The regime or regimen according to claim 29, wherein the composition is a gel.
33. The regime or regimen according to claim 30, wherein the composition is a gel.
34. A method for treating common acne, comedones, polymorphous acne, nodulocystic acne, acne conglobata or secondary acne afflicting the skin of an individual in need of such treatment, comprising topically administering to said individual an effective amount of a pharmaceutical composition which is a gel consisting of 0.3% by weight of adapalene, carbomer 940, disodium edetate, methyl paraben, poloxamer 124, propylene glycol, sodium hydroxide and purified water.
35. The method according to claim 34, wherein said individual is afflicted with common acne.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate and a layer grown on the upper clad layer of the light-emitting section, wherein
when growing the layer on the upper clad layer from a crystal interface where crystal composition on the upper clad layer of the light-emitting section changes in a lattice mismatching state in which the absolute value of a lattice matching factor aa between fore and hind crystals of the crystal interface is not lower than 0.25%, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
2. A method for producing a semiconductor light-emitting device as claimed in claim 1, wherein
the layer grown on the upper clad layer of the light-emitting section includes at least one of a current diffusion layer and a current stopping layer.
3. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer being made of a material selected so as to satisfy a condition that a conduction band lower end of the intermediate layer is intermediate between a conduction band lower end of the upper clad layer and a conduction band lower end of the layer grown on the intermediate layer or a condition that a valence band upper end of the intermediate layer is intermediate between a valence band upper end of the upper clad layer and a valence band upper end of the layer grown on the intermediate layer in an energy position prior to the formation of a junction, wherein
when growing the intermediate layer on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the upper clad layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
4. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer being made of a material selected so as to satisfy a condition that a conduction band lower end of the intermediate layer is intermediate between a conduction band lower end of the upper clad layer and a conduction band lower end of the layer grown on the intermediate layer or a condition that a valence band upper end of the intermediate layer is intermediate between a valence band upper end of the upper clad layer and a valence band upper end of the layer grown on the intermediate layer in an energy position prior to the formation of a junction, wherein
when growing the layer on the intermediate layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the intermediate layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
5. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer being made of a material selected so as to satisfy a condition that a conduction band lower end of the intermediate layer is intermediate between a conduction band lower end of the upper clad layer and a conduction band lower end of the layer grown on the intermediate layer or a condition that a valence band upper end of the intermediate layer is intermediate between the valence band upper end of the upper clad layer and a valence band upper end of the layer grown on the intermediate layer is satisfied in an energy position prior to the formation of a junction, wherein
when growing the intermediate layer on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the upper clad layer and when growing the layer on the intermediate layer in a lattice mismatching state in which the absolute value of the lattice matching factor aa is not lower than 0.25% with respect to the intermediate layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
6. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer having a lattice constant intermediate between a lattice constant of the upper clad layer and a lattice constant of the layer grown on the intermediate layer, wherein
when growing the intermediate layer on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the upper clad layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
7. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer having a lattice constant intermediate between a lattice constant of the upper clad layer and a lattice constant of the layer grown on the intermediate layer, wherein
when growing the layer on the intermediate layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the intermediate layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
8. A method for producing a semiconductor light-emitting device having a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate, an intermediate layer formed on the upper clad layer of the light-emitting section and a layer grown on the intermediate layer, the intermediate layer having a lattice constant intermediate between a lattice constant of the upper clad layer and a lattice constant of the layer grown on the intermediate layer, wherein
when growing the intermediate layer on the upper clad layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to the upper clad layer and when growing the layer on the intermediate layer in a lattice mismatching state in which the absolute value of the lattice matching factor aa is not lower than 0.25% with respect to the intermediate layer, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
9. A method for producing a semiconductor light-emitting device as claimed in claim 3, wherein the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current stopping layer.
10. A method for producing a semiconductor light-emitting device as claimed in claim 4, wherein
the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current stopping layer.
11. A method for producing a semiconductor light-emitting device as claimed in claim 5, wherein
the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current stopping layer.
12. A method for producing a semiconductor light-emitting device as claimed in claim 6, wherein
the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current is stopping layer.
13. A method for producing a semiconductor light-emitting device as claimed in claim 7, wherein
the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current stopping layer.
14. A method for producing a semiconductor light-emitting device as claimed in claim 8, wherein
the layer grown on the intermediate layer includes at least one of a current diffusion layer and a current stopping layer.
15. A method for producing a semiconductor light-emitting device as claimed in claim 3, wherein
the intermediate layer is comprised of two or more layers.
16. A method for producing a semiconductor light-emitting device as claimed in claim 4, wherein
the intermediate layer is comprised of two or more layers.
17. A method for producing a semiconductor light-emitting device as claimed in claim 5, wherein
the intermediate layer is comprised of two or more layers.
18. A method for producing a semiconductor light-emitting device as claimed in claim 6, wherein
the intermediate layer is comprised of two or more layers.
19. A method for producing a semiconductor light-emitting device as claimed in claim 7, wherein
the intermediate layer is comprised of two or more layers.
20. A method for producing a semiconductor light-emitting device as claimed in claim 8, wherein
the intermediate layer is comprised of two or more layers.
21. A method for producing a semiconductor light-emitting device as claimed in claim 15, wherein
when growing an (n1)-th intermediate layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to an n-th grown intermediate layer of the intermediate layers, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
22. A method for producing a semiconductor light-emitting device as claimed in claim 18, wherein when growing an (n1)-th intermediate layer in a lattice mismatching state in which the absolute value of a lattice matching factor aa is not lower than 0.25% with respect to an n-th grown intermediate layer of the intermediate layers, a growth rate at least at a start time of growth is made to be not greater than 1.0 mh.
23. A method for producing a semiconductor light-emitting device as claimed in claim 5, wherein at least one layer out of the layers of which the growth rate at the start time of growth is not greater than 1.0 mh is made to have a growth rate of greater than 1 mh except when starting the growth.
24. A method for producing a semiconductor light-emitting device as claimed in claim 8, wherein
at least one layer out of the layers of which the growth rate at the start time of growth is not greater than 1.0 mh is made to have a growth rate of greater than 1 pinh except when starting the growth.
25. A method for producing a semiconductor light-emitting device as claimed in claim 15, wherein
at least one layer out of the layers of which the growth rate at the start time of growth is not greater than 1.0 mh is made to have a growth rate of greater than 1 mh except when starting the growth.
26. A method for producing a semiconductor light-emitting device as claimed in claim 23, wherein at least one layer out of the layers of which the growth rate at the start time of growth is not greater than 1.0 mh is made to have a growth rate of greater than 1 nh except when starting the growth.
27. A method for producing a semiconductor light-emitting device as claimed in claim 2, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are made of (AlxGa1-x)yIn1-yP (0x1, 0y1).
28. A method for producing a semiconductor light-emitting device as claimed in claim 9, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are made of (AxGa1-x) yIn1-yP (0x1, 0y1).
29. A method for producing a semiconductor light-emitting device as claimed in claim 12, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are made of (AxGa1-x)yIn1-yP (0x1, 0y1)
30. A method for producing a semiconductor light-emitting device as claimed in claim 2, wherein
the lower clad layer, the active layer and the upper clad layer are made of (AxGa1-x)yIn1-yP (0x1, 0y1) and
the current diffusion layer and the current stopping layer are made of GaP.
31. A method for producing a semiconductor light-emitting device as claimed in claim 9, wherein
the lower clad layer, the active layer and the upper clad layer are made of (AxGa1-x)yIn1-yP (0x1, 0y1) and
the current diffusion layer and the current stopping layer are made of GaP.
32. A method for producing a semiconductor light-emitting device as claimed in claim 12, wherein
the lower clad layer, the active layer and the upper clad layer are made of (AxGa1-x)yIn1-yP (0x1, 0y1) and
the current diffusion layer and the current stopping layer are made of GaP.
33. A method for producing a semiconductor light-emitting device as claimed in claim 2, wherein
a growth temperature at the time of ending the growth of the upper clad layer and growth temperatures of the intermediate layer and the current diffusion layer are made higher than a growth temperature of the light-emitting section except for the growth temperature at the time of ending the growth of the upper clad layer.
34. A method for producing a semiconductor light-emitting device as claimed in claim 9, wherein
a growth temperature at the time of ending the growth of the upper clad layer and growth temperatures of the intermediate layer and the current diffusion layer are made higher than a growth temperature of the light-emitting section except for the growth temperature at the time of ending the growth of the upper clad layer.
35. A method for producing a semiconductor light-emitting device as claimed in claim 12, wherein
a growth temperature at the time of ending the growth of the upper clad layer and growth temperatures of the intermediate layer and the current diffusion layer are made higher than a growth temperature of the light-emitting section except for the growth temperature at the time of ending the growth of the upper clad layer.
36. A method for producing a semiconductor light-emitting device as claimed in claim 2, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are grown by a metal-organic chemical vapor deposition method.
37. A method for producing a semiconductor light-emitting device as claimed in claim 9, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are grown by a metal-organic chemical vapor deposition method.
38. A method for producing a semiconductor light-emitting device as claimed in claim 12, wherein
the lower clad layer, the active layer, the upper clad layer, the intermediate layer, the current diffusion layer and the current stopping layer are grown by a metal-organic chemical vapor deposition method.