Author: claimsbot

1. A method of predicting failure in of geotechnical structures, comprising:
measuring specific AE signals generated from damages to an outer waveguide by the deformation or movement in geotechnical structures using a measurement apparatus affixed with AE sensors, wherein the measurement apparatus affixed with AE sensors, at least one of which is attached to the inner waveguide, is fixedly installed in a borehole and passes through an expected failure plane and includes both an inner waveguide, which is formed of metallic material that is intended to prevent sharp attenuations of AE signals, and an outer waveguide, which firmly encloses at least one AE sensor as well as the inner waveguide and is formed of a homogeneous brittle material that is intended to generate specific AE signals regardless of ground conditions or formations when the outer waveguide is damaged by the events that indicated there are deformations or movements in the geotechnical structures;
obtaining parametric values in the geotechnical structures, which indicate damage levels in the geotechnical structures, in order to predict the failure in the geotechnical structures, wherein these parametric values are extracted from the AE signals measured by at least one AE;
performing at least one of laboratory tensile, shear and compression tests with respect to a laboratory testing measurement apparatus affixed with AE sensors that is the same as the installed measurement apparatus in the geotechnical structures, and obtaining AE signals generated by the damage of an outer waveguide of the laboratory testing measurement apparatus affixed with AE sensors obtaining laboratory parametric values with applied load in the laboratory tests, which correspond to the parametric values in the geotechnical structures, are extracted from AE signals generated by the damage of the outer waveguide of the laboratory testing measurement apparatus; and
comparing one or more reference parametric values and obtained parametric values in geotechnical structures, wherein the one or more reference parametric values indicate the damage levels in geotechnical structures, are included in laboratory parametric values corresponding to the parametric values in the geotechnical structures, and the obtained parametric values in geotechnical sturctures are obtained in the parametric values-obtaining step in geotechnical structures, and evaluating where the geotechnical structures correspond to the damage levels from one or more reference parametric values.
2. The method of claim 1, wherein the obtained parametric values the geotechnical structures are at least one of a count value, an accumulated count value and a count frequency value of the measured AE signals,
wherein the count is a parameter which is indicated by the number of times, of which amplitudes exceed a threshold in an AE signal waveform obtained from the AE signal during a desired time interval \u0394t1, which are generated from the damages to the outer waveguide by specific events,
the accumulated count is a parameter, which is an accumulative sum of the count values with respect to the different specific events according to the lapse of time, and
the count frequency is a parameter which is a total of the count values obtained during a desired time interval At2 with respect to the different specific events according to the lapse of time, and
assuming that k is a natural number equal to or larger than 2, \u0394tt is \u0394t2=k\u0394t1.
3. The method of claim 1, wherein the obtained parametric values in the geotechnical structures are at least one of an energy value, an accumulated energy value and a energy frequency value of the measured AE signal,
wherein the energy is a parameter which is indicated by a surface area of an envelope of a AE signal waveform or a maximum amplitude in the AE signal waveform. The AE signal waveform is obtained from the AE signal during a desired time interval \u0394t1, which are generated from the damages to the outer waveguide by specific events, and
the accumulated energy is a parameter which is an accumulative sum of the energy values with respect to the different specific events according to the lapse of time, and
the energy frequency is a parameter which is a total of the energy values obtained during a desired time interval \u0394t2 with respect to the different specific events according to the lapse of time, and
assuming that k is a natural number equal to or larger than 2, \u0394t2 is \u0394t2=k\u0394t1.
4. The method of any one of claims 1 to 3, wherein coefficients of reference parameters corresponding to the damage levels in the geotechnical structures are C1, C2 and C3, and
the reference coefficient C1 is a value for evaluating where the damage level in the geotechnical structure corresponds to a \u2018dangerous level\u2019 in which the damage in the geotechnical structures may be developed to a macro-failure in the geotechnical structures and also a value when load corresponding to 80% of failure strength is applied to the laboratory testing measurement apparatus affixed with AE sensors used in the laboratory tests, and
the reference coefficient C2 is a value for evaluating where the damage level in the geotechnical structures corresponds to a \u2018damage developing level\u2019 in which the damage in the geotechnical structures sharply grows and thus can proceed to the \u2018dangerous level\u2019, and also a value when load corresponding to 60% of failure strength is applied to the laboratory measurement apparatus affixed with AE sensors used in the laboratory tests, and
the reference coefficient O3 is a value for evaluating whether the damage level in the geotechnical structures passes a \u2018safe level\u2019 in which the geotechnical structures are insignificantly damaged or not damaged, and then their damage level arrives at a \u2018damage proceeding level\u2019 in which the geotechnical structures are slowly damaged and thus can proceed to the \u2018damage developing level\u2019, and also a value when load corresponding to 40% of failure strength is applied to the laboratory measurement apparatus affixed with AE sensors used in the laboratory tests.
5. A method of predicting failure in geotechnical structures, comprising:
measuring specific AE signals generated from damages to an outer waveguide by a deformation or movement in the geotechnical structures using a measurement apparatus affixed with AE sensors, wherein the measurement apparatus affixed with AE sensors is fixedly installed in a borehole and passes through an expected failure plane and includes both an inner waveguide, which is formed of metallic material that is intended to prevent sharp attenuations of AE signals, and an outer waveguide; two AE sensors are attached to the inner waveguide so that the expected failure plane is interposed between two AE sensors, and one of which above the other; the outer waveguide firmly encloses at least one AE sensor as well as the inner waveguide; and the outer waveguide is formed of a homogeneous brittle material that is intended to generate specific AE signals regardless of ground conditions or formations when the outer waveguide is damaged by the events that indicated there are deformations or movements in the geotechnical structures;
obtaining arrival times from an AE signal generated from the damages to the outer waveguide by a specific event, wherein the AE signal is measured by the upper AE sensor and the lower AE sensor and the arrival time is defined as time when an initial AE signal waveform arrives at each of the upper and lower AE sensors;
determining a distance between the upper AE sensor and a source of the AE signal or a distance between the lower AE sensor and the source of the AE signal from a difference between the arrival times obtained from the AE signal measured by the upper AE sensor and the lower AE sensor;
obtaining at least one parametric values of a summed magnitude value, an accumulated summed magnitude value and am summed magnitude frequency value of the AE signals measured by the upper or lower AE sensor, in order to predict the failure in the geotechnical structures from the AE signals measured by the upper or lower AE sensor;
performing at least one of laboratory tensile, shear and compression tests with respect to a laboratory testing measurement apparatus affixed with AE sensors that is the same as the installed measurement apparatus in the geotechnical structures, and obtaining AE signals generated by the damage of an outer waveguide of the laboratory testing measurement apparatus affixed with AE sensors, wherein obtaining laboratory parametric values with applied load in the laboratory tests, which correspond to the parametric values in the geotechnical structures, are extracted from AE signals generated by the damage of the outer waveguide of the laboratory testing measurement apparatus; and
comparing one or more reference parametric values and obtained parametric values in geotechnical structures, wherein the one or more reference parametric values indicate the damage levels in geotechnical structures, are among laboratory parametric values corresponding to the parametric values in the geotechnical structures and the obtained parametric values in geotechnical sturctures are obtained in the parametric values-obtaining step in geotechnical structures, and
wherein the summed magnitude is a parameter which is indicated by G(d)\u0398F(E) of the AE signals and the AE signals are measured during a desired time interval \u0394t1, and generated from the damage to an outer waveguide by the specific events,
and the accumulated summed magnitude is a parameter, which is an accumulative sum of the summed magnitude values with respect to the different specific events according to the lapse of time, and
the summed magnitude frequency is a parameter which is a total of the summed magnitude values obtained during a desired time interval \u0394t2 with respect to the different specific events according to the lapse of time, and
assuming that k is a natural number equal to or larger than 2, \u0394t2 is \u0394t2=k\u0394t1, and
d is a distance between one of the upper and lower AE sensors and the source of the AE signal, which is used in obtaining the summed magnitude value in the determining of distance from specific source and
G(d) is an attenuating function according to d, and is indicated by G(d)=A1d+A2 or G(d)=B1e\u2212d+B2, and
A1, A2, B1 and B2 are regression coefficients which are decided by a material of the inner guide, and
\u0398 is an operator decided by G(d), and
F(E) is an energy function of the AE signal used in obtaining of the summed magnitude value.
6. The method of claim 5, wherein F(E) is one of
log
\ue8a0

(

ppA

2
\ue89e
\u03c0
\ue89e
\ue89e
f
)
,

log
(
\u2211

j
=
1

n

\ue89e

A
j
2
n
\ue89e
)
and dBpeak,
wherein ppA is a maximum particle acceleration of the AE signal used in obtaining the summed magnitude value,
f is a dominant frequency of the AE signal used in obtaining the summed magnitude value,
n is a count of the AE signal used in obtaining the summed magnitude value,
Aj is an amplitude of a j-th waveform forming the AE signal used in obtaining the summed magnitude value, which is over a threshold value, and
dBpeak is a maximum amplitude in the waveform forming the AE signal used in obtaining the summed magnitude value.
7. The method of claim 5 or 6, wherein coefficients of reference parameters corresponding to the damage levels in the geotechnical structures are C1, C2 and C3, and,
the reference coefficient C1 is a value for evaluating where the damage level in the geotechnical structures corresponds to a \u2018dangerous level\u2019 in which a macro-failure in the geotechnical structures may be occurred, and also a value when force corresponding to 80% of failure strength is exerted to the laboratory testing measurement apparatus affixed with AE sensors used in the laboratory test,
the reference coefficient C2 is a value for evaluating where the damage level in the geotechnical structures corresponds to a \u2018damage developing level\u2019 in which the geotechnical structures are sharply damaged and thus can proceed to the \u2018dangerous level\u2019, and also a value when force corresponding to 60% of failure strength is exerted to the laboratory measurement apparatus affixed with AE sensors used in the laboratory test, and
the reference coefficient C3 is a value for evaluating whether the damage level in the geotechnical structures passes a \u2018safe level\u2019 in which the geotechnical structures are insignificantly damaged or not damaged, and then arrive at a \u2018damage proceeding level\u2019 in which the geotechnical structures are slowly damaged and thus can proceed to the \u2018damage developing level\u2019, and also a value when force corresponding to 40% of failure strength is exerted to the laboratory measurement apparatus affixed with AE sensors used in the laboratory test.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A drive control system for a multi-phase and sensor-less motor for driving the motor by switching a current of a field coil in each phase of the motor depending on a rotational phase of the motor, comprising:
a power feeding circuit feeding electrical power, for a predetermined period, to a selected field coil when the selected field coil is in a phase other than a detection phase to induce a voltage in another field coil;
an induced voltage detecting circuit detecting the induced voltage on said another field coil during the detection phase;
a magnetic pole position detecting circuit detecting a magnetic pole position of a rotor based on an amplitude of said induced voltage;
a driving circuit determining a power supply phase for drive of the motor based on the magnetic pole position, and executing power supply for drive depending on the power supply phase;
a control circuit alternately conducting detection of the magnetic pole and power supply for drive of the motor by said driving circuit when a rotating speed of the motor is less than a predetermined speed; and
a back electromotive force detecting circuit detecting a back electromotive force on said field coil so as to determine the power supply phase when the rotating speed of the motor is greater than said predetermined speed, with drive of the motor being executed based on a detection result of the back electromotive force detecting circuit.
2. A drive control system according to claim 1,
wherein the field coils of all phases undergo the detection phase during a first period for detection of the magnetic pole position, the field coil of only one phase is selected to undergo the detection phase in a next period for detection of the magnetic pole position.
3. A drive control system according to claim 1, further comprising a reset circuit provided to reset detection parameters when said detection of the magnetic pole position fails and to re-try said detection of the magnetic pole position after said reset.
4. A drive control system according to claim 1, further comprising a rotor position control circuit provided to shift the rotor’s position with an open loop control when the detection of the magnetic pole position fails for a predetermined number of times, and to re-try said detection of the magnetic pole position after said open loop control.
5. A drive control system according to claim 1,
wherein when conditions of the induced voltages detected in each phase are all identical or when amplitudes of the induced voltages detected in all phases are smaller than a predetermined threshold value, said detection of the magnetic pole position is judged to have failed.
6. A drive control system according to claim 1,
wherein the detection of said induced voltage is executed by accumulating a plurality of detected values obtained in a predetermined detection period and condition of the induced voltage is judged using an accumulated value generated by accumulating the plurality of detected values.
7. A drive control system according to claim 1,
wherein a circuit is also provided to logically judge, when an amplitude of an induced voltage obtained in any detection phase of said induced voltage is less than the threshold value, the magnetic pole position based on a normally detected induced voltage from a preceding magnetic pole position detection.
8. A drive control system according to claim 1,
wherein prior to a detection of said induced voltage, an offset voltage is detected from the field coil to undergo the detection phase, and only an induced voltage component is detected in the detection phase by subtracting a detected value of the offset voltage from a detected value of the induced voltage.
9. A drive control system according to claim 1,
wherein said induced voltage is converted to a digital value, such digital conversion is executed a plurality of times for every detection phase, and the results of the digital conversion are used as the detected value.
10. A drive control system according to claim 1,
wherein condition setting parameters for a detection of the magnetic pole position are stored in a programmable non-volatile memory, and contents of the programmable non-volatile memory can be updated or manipulated from an external side via a serial inputoutput port.
11. The controller of claim 1, further comprising a commutation circuit, and wherein the back electromotive force is a voltage induced on the another field coil.
12. A motor controller comprising:
a test power supply constructed to energize a first coil of a plurality of coils in a motor with test power;
a detection circuit constructed to detect an induced voltage caused by the test power supply on a second coil of the plurality of coils;
a position determination circuit constructed to determine a magnetic pole position of the motor based on the induced voltage;
a drive power supply constructed to supply drive power to the motor based on the magnetic pole position when a rotational speed of the motor is less than a predetermined speed;
a back electromotive force detection circuit constructed to detect a back electromotive force to control the drive power to the motor when the rotational speed of the motor is greater than said predetermined speed.
13. The controller of claim 12, wherein the test power is a pulse current.
14. The controller of claim 12, wherein the test power is a pulse current insufficient to drive the motor.
15. The controller of claim 12, wherein the position determination circuit can detect the magnetic pole position when the rotational speed of the motor is insufficient to detect the back electromagnetic force.
16. The controller of claim 12, wherein during a start-up period, the test power supply supplies test power to each coil of the plurality of coils in succession, and the induced voltage is detected on another of the plurality of coils.
17. The controller of claim 12, further comprising an open loop controller constructed to rotate the motor in the event that the magnetic pole position cannot be detected.
18. The controller of claim 12, wherein the supply of the drive power is alternated with detection of the magnetic pole position.
19. The controller of claim 12, wherein the motor is a sensor-less multi-phase motor.
20. A motor drive control system, comprising:
a three-phase and sensor-less motor;
a field coil;
a magnetic pole position detection unit that detects an amplitude of a voltage induced in the field coil in a no power feeding phase based on a variation in mutual inductance while current is supplied to at least one other phase of the motor, the magnetic pole position detection unit further detecting the magnetic pole position based on the detected amplitude;
a commutation Unit;
a drive unit that, based on the magnetic pole position, determines a drive phase in which a drive current to generate a torque of the motor is fed to the field coil; and
a sequencer unit that alternately executes a detection operation of the magnetic pole position and a drive operation so that the drive current is supplied to the field coil in the drive phase to execute an initial acceleration.
21. A motor drive control system according to claim 20,
wherein the sequencer unit is adapted to execute an initial acceleration operation including:
detecting the magnetic pole position of the field coil in all phases so as to detect an initial value of the magnetic pole position, and
detecting the magnetic pole position of the field coil in only one phase based on the initial value of the magnetic pole position.
22. A motor drive control system according to claim 20, wherein the sequencer unit resets detection parameters when said detection of the magnetic pole position fails in order to re-try said detection of the magnetic pole position after said reset.
23. A motor drive control system according to claim 20, wherein the sequencer unit executes a control to shift a rotor’s position with an open loop control when the detection of the magnetic pole position fails for a predetermined number of times, and to re-try said detection of the magnetic pole position after said open loop control.
24. A motor drive control system according to claim 20, wherein when conditions of induced voltages detected in each phase are all identical or when amplitudes of induced voltages detected in all phases are smaller than a predetermined threshold value, said detection of the magnetic pole position is judged to have failed.
25. A motor drive control system according to claim 20, wherein the detection of the amplitude of the voltage induced in the field coil includes integration of a plurality of values obtained during a predetermined detection phase.
26. A motor drive control system according to claim 20, wherein when the amplitude of the voltage induced in the field coil obtained in any detection phase is less than a threshold value, the sequencer unit logically judges the magnetic pole position based on a normally detected induced voltage from a preceding magnetic pole position detection.

1. A compound represented by the formula (I):
wherein in the formula, Link represents a saturated or unsaturated straight hydrocarbon chain having 1 to 3 carbon atoms,
C2, C3, C4, C5, and C6 in the aromatic ring (E) independently represent a ring-constituting carbon atom, one of the ring-constituting carbon atoms to which Rs and AR do not bind may be replaced with V,
V represents nitrogen atom, or carbon atom substituted with Zx, Zx represents a linear or branched saturated alkyl group having 1 to 4 carbon atoms, fluorine atom, chlorine atom, bromine atom, nitro group, \u2014OR9, or \u2014N(Rn1)(Rn2), R9 represents hydrogen atom, a lower alkyl group having 1 to 4 carbon atoms, or -A6-Qp, wherein A6 represents a single bond or methylene, Qp represents phenyl group, and the phenyl group may be substituted with one of T1 or two or more of the same or different T1, T1 represents a linear or branched saturated alkyl group having 1 to 4 carbon atoms, hydroxyl group, fluorine atom, chlorine atom, bromine atom, trifluoromethyl group, nitro group, an alkoxy group having 1 to 4 carbon atoms, or a mono- or dialkylamino group having 1 to 4 carbon atoms, Rn1 represents hydrogen atom or a linear or branched saturated alkyl group having 1 to 4 carbon atoms, Rn2 has the same meaning as Rn1, or represents \u2014COR23 or \u2014SO2R24, or binds to Rn1 to form a 3- to 6-membered ring together with the nitrogen atom to which they bind to form a saturated nitrogen-containing cycloalkyl group or morpholino group, R23 represents hydrogen atom, a lower alkyl group having 1 to 4 carbon atoms, a lower alkoxy group having 1 to 4 carbon atoms, \u2014O-A6-Qp, or \u2014N(R25)(R26), R25 represents hydrogen atom, or a linear or branched saturated alkyl group having 1 to 4 carbon atoms, R26 has the same meaning as R25, or binds to R25 to form a 3- to 6-membered ring together with the nitrogen atom to which they bind to form a saturated nitrogen-containing cycloalkyl group or morpholino group, R24 represents a lower alkyl group having 1 to 4 carbon atoms, amino group, or a mono- or dialkylamino group having 1 to 4 carbon atoms,
Rs represents -D-Rx or \u2014N(Ry)(Rz),
D represents a single bond, oxygen atom, sulfur atom, \u2014S(O)\u2014, \u2014S(O)2\u2014, or \u2014C(O)\u2014,
Rx represents a linear or branched saturated alkyl group having 3 to 8 carbon atoms, Ra represented by the following formula:
R1(CH2)k\u2014\u2003\u2003(Ra)
Rb represented by the following formula:
or Rc represented by the following formula:
symbol k in Ra represents 0 or an integer of 1 to 3, R1 represents a saturated cyclic alkyl group having 3 to 7 carbon atoms, or a condensed saturated cyclic alkyl group having 6 to 8 carbon atoms, and R1 may be substituted with one of lower alkyl group having 1 to 4 carbon atoms or two or more of the same or different lower alkyl groups having 1 to 4 carbon atoms, Q in Rb represents a partially unsaturated or completely unsaturated monocyclic or condensed bicyclic carbon ring or a heterocyclic ring (q), and binds to A2 at an arbitrary position on the ring, the heterocyclic ring (q) contains the same or different 1 to 4 ring-constituting heteroatoms selected from the group consisting of nitrogen atom, oxygen atom, and sulfur atom, A1 represents a single bond or an alkylene (a) having 1 to 3 carbon atoms, and the alkylene (a) may be substituted with a lower alkyl group having 1 to 4 carbon atoms or phenyl group, A2 represents a single bond, oxygen atom, sulfur atom, \u2014S(O)\u2014, \u2014S(O)2\u2014, or \u2014N(R4)\u2014 (provided that when A2 represents oxygen atom, sulfur atom, \u2014S(O)\u2014, \u2014S(O)2\u2014 or \u2014N(R4)\u2014, A1 represents ethylene or trimethylene), R2 and R3 independently represent hydrogen atom, a linear or branched saturated alkyl group having 1 to 4 carbon atoms, oxo group, thioxo group, fluorine atom, chlorine atom, bromine atom, trifluoromethyl group, \u2014OR5, \u2014N(R6)(R6\u2032), \u2014NHCOR7, \u2014NHSO2R8, or -A6-Qa, or they bind to each other to represent methylenedioxy group, Qa represents a partially unsaturated or completely unsaturated monocyclic or condensed bicyclic carbon ring or a heterocyclic ring (qa), binds to A6 at an arbitrary position on the ring, and may be substituted with one of T1 or two or more of the same or different T1, the heterocyclic ring (qa) contains the same or different 1 to 4 ring-constituting heteroatoms selected from the group consisting of nitrogen atom, oxygen atom, and sulfur atom, R4 and R6 independently represent hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms, R5 and R7 independently represent hydrogen atom, a lower alkyl group having 1 to 4 carbon atoms, or -A6-Qa, R8 represents a lower alkyl group having 1 to 4 carbon atoms, R6\u2032 has the same meaning as R6, or binds to R6 to form a 3- to 6-membered ring together with the nitrogen atom to which they bind to represent a saturated nitrogen-containing cycloalkyl group or morpholino group, symbol p in Rc represents an integer of 2 to 4, A4 represents a single bond, methylene, or ethylene, A5 represents \u2014C(O)\u2014, \u2014C(S)\u2014, or \u2014S(O)2\u2014, Rd represents hydrogen atom, an alkyl group having 1 to 8 carbon atoms, or Qa, Re represents an alkyl group having 1 to 8 carbon atoms, -A6-Qa, \u2014(CH2)iR14, \u2014OR28, \u2014SR28, or \u2014N(R29)(R30), symbol i represents an integer of 1 to 3, R14 represents hydroxyl group, an alkoxy group having 1 to 4 carbon atoms, carboxyl group, or an N,N-dialkylcarbamoyl group having 1 to 4 carbon atoms, R28 represents an alkyl group having 1 to 8 carbon atoms, or -A6-Qa, R29 represents an alkyl group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 1 to 4 carbon atoms, or -A6-Qa, R30 represents hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms, or binds to R29 to form a 3- to 6-membered ring together with the nitrogen atom to which they bind to represent a saturated nitrogen-containing cycloalkyl group or morpholino group,
Rz has the same meaning as Rx, or Rz represents methyl group, ethyl group, or -A5-Re, Ry represents hydrogen atom, an alkyl group having 1 to 8 carbon atoms, or -A6-Qp, or Ry may bind to Rz to form, together with a nitrogen atom to which they bind, a saturated or unsaturated 3 to 7-membered nitrogen-containing cyclic group, wherein said nitrogen-containing cyclic group may optionally be substituted with one or two lower alkyl groups having 1 to 4 carbon atoms wherein said two alkyl groups may be the same or different,
AR represents a partially unsaturated or completely unsaturated condensed bicyclic carbon ring or a heterocyclic ring (ar), and may be substituted with one of Xa or two or more of the same or different Xa, the heterocyclic ring (ar) contains the same or different 1 to 4 ring-constituting heteroatoms selected from the group consisting of nitrogen atom, oxygen atom, and sulfur atom, Xa represents a linear or branched saturated alkyl group having 1 to 4 carbon atoms, a saturated cyclic alkyl group having 3 to 7 carbon atoms, oxo group, thioxo group, fluorine atom, chlorine atom, trifluoromethyl group, \u2014(CH2)iR14, \u2014OR10, \u2014N(R11)(R12), \u2014SO2R13, or \u2014COR27, R10 represents hydrogen atom, a lower alkyl group having 1 to 4 carbon atoms, or \u2014(CH2)iR14, R11 represents hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms, R12 represents hydrogen atom, a lower alkyl group having 1 to 4 carbon atoms, a hydroxyalkyl group having 2 to 4 carbon atoms, \u2014COR15, or \u2014SO2R16, or binds to R11 to form a 3- to 6-membered ring together with the nitrogen atom to which they bind to represent a saturated nitrogen-containing cycloalkyl group or morpholino group, R15 represents a lower alkyl group having 1 to 4 carbon atoms, a hydroxyalkyl group having 2 to 4 carbon atoms, amino group, a mono- or dialkylamino group having 1 to 4 carbon atoms, or -A6-Qa, R13 and R16 independently represent a lower alkyl group having 1 to 4 carbon atoms, amino group, or a mono- or dialkylamino group having 1 to 4 carbon atoms, R27 represents hydrogen atom, hydroxyl group, an alkoxy group having 1 to 4 carbon atoms, a lower alkyl group having 1 to 4 carbon atoms, amino group, or a mono- or dialkylamino group having 1 to 4 carbon atoms,
Y represents hydrogen atom, a lower alkyl group having 1 to 4 carbon atoms, \u2014(CH2)mN(R18)(R19), or \u2014C(R20)2OC(O)A3R21, symbol m represents an integer of 2 or 3, R18 is the same as R19, or binds to R19 to form a 3- to 6-membered ring together with the nitrogen atom to which they bind to represent a saturated nitrogen-containing cycloalkyl group or morpholino group, R19 represents methyl group, ethyl group, or propyl group, R20 represents hydrogen atom, methyl group, ethyl group, or propyl group, R21 represents a lower alkyl group having 1 to 4 carbon atoms, a cyclic saturated alkyl group having 3 to 6 carbon atoms, or phenyl group, and A3 represents a single bond, or oxygen atom, or a salt thereof.
2. The compound or salt thereof according to claim 1, which comprises the combination according to general formula (I), wherein in the formula,
Link represents a saturated or unsaturated straight hydrocarbon chain having 1 to 3 carbon atoms,
C2, C3, C4, C5, and C6 in the aromatic ring (E) independently represent a ring-constituting carbon atom, one of the ring-constituting carbon atoms to which Rs and AR do not bind may be replaced with V,
V represents nitrogen atom, or carbon atom substituted with Zx, Zx represents a linear or branched saturated alkyl group having 1 to 4 carbon atoms, fluorine atom, chlorine atom, bromine atom, nitro group, \u2014OR9, or \u2014N(Rn1)(Rn2), R9 represents hydrogen atom, a lower alkyl group having 1 to 4 carbon atoms, or -A6-Qp, wherein A6 represents a single bond or methylene, Qp represents phenyl group, and the phenyl group may be substituted with one of T1 or two or more of the same or different T1, T1 represents a linear or branched saturated alkyl group having 1 to 4 carbon atoms, hydroxyl group, fluorine atom, chlorine atom, bromine atom, trifluoromethyl group, nitro group, an alkoxy group having 1 to 4 carbon atoms, or a mono- or dialkylamino group having 1 to 4 carbon atoms, Rn1 represents hydrogen atom or a linear or branched saturated alkyl group having 1 to 4 carbon atoms, Rn2 has the same meaning as Rn1, or represents \u2014COR23 or \u2014SO2R24, or binds to Rn1 to form a 3- to 6-membered ring together with the nitrogen atom to which they bind to form a saturated nitrogen-containing cycloalkyl group or morpholino group, R23 represents hydrogen atom, a lower alkyl group having 1 to 4 carbon atoms, a lower alkoxy group having 1 to 4 carbon atoms, \u2014O-A6-Qp, or \u2014N(R25)(R26), R25 represents hydrogen atom, or a linear or branched saturated alkyl group having 1 to 4 carbon atoms, R26 has the same meaning as R25, or binds to R25 to form a 3- to 6-membered ring together with the nitrogen atom to which they bind to form a saturated nitrogen-containing cycloalkyl group or morpholino group, R24 represents a lower alkyl group having 1 to 4 carbon atoms, amino group, or a mono- or dialkylamino group having 1 to 4 carbon atoms,
Rs represents -D-Rx or \u2014N(Ry)(Rz),
D represents a single bond, oxygen atom, sulfur atom, \u2014S(O)\u2014, \u2014S(O)2\u2014, or \u2014C(O)\u2014,
Rx represents a linear or branched saturated alkyl group having 3 to 8 carbon atoms, or represents Ra, Rb, or Rc, wherein symbol k in Ra represents 0 or an integer of 1 to 3, R1 represents a saturated cyclic alkyl group having 3 to 7 carbon atoms, or a condensed saturated cyclic alkyl group having 6 to 8 carbon atoms, and R1 may be substituted with one of lower alkyl group having 1 to 4 carbon atoms or two or more of the same or different lower alkyl groups having 1 to 4 carbon atoms, Q in Rb represents a partially unsaturated or completely unsaturated monocyclic or condensed bicyclic carbon ring or a heterocyclic ring (q), and binds to A2 at an arbitrary position on the ring, the heterocyclic ring (q) contains the same or different 1 to 4 ring-constituting heteroatoms selected from the group consisting of nitrogen atom, oxygen atom, and sulfur atom, A1 represents a single bond or an alkylene (a) having 1 to 3 carbon atoms, and the alkylene (a) may be substituted with a lower alkyl group having 1 to 4 carbon atoms or phenyl group, A2 represents a single bond, oxygen atom, sulfur atom, \u2014S(O)\u2014, \u2014S(O)2\u2014, or \u2014N(R4)\u2014 (provided that when A2 represents oxygen atom, sulfur atom, \u2014S(O)\u2014, \u2014S(O)2\u2014 or \u2014N(R4)\u2014, A1 represents ethylene or trimethylene), R2 and R3 independently represent hydrogen atom, a linear or branched saturated alkyl group having 1 to 4 carbon atoms, oxo group, thioxo group, fluorine atom, chlorine atom, bromine atom, trifluoromethyl group, \u2014OR5, \u2014N(R6)(R6\u2032), \u2014NHCOR7, \u2014NHSO2R8, or -A6-Qa, or they bind to each other to represent methylenedioxy group, Qa represents a partially unsaturated or completely unsaturated monocyclic or condensed bicyclic carbon ring or a heterocyclic ring (qa), binds to A6 at an arbitrary position on the ring, and may be substituted with one of T1 or two or more of the same or different T1, the heterocyclic ring (qa) contains the same or different 1 to 4 ring-constituting heteroatoms selected from the group consisting of nitrogen atom, oxygen atom, and sulfur atom, R4 and R6 independently represent hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms, R5 and R7 independently represent hydrogen atom, a lower alkyl group having 1 to 4 carbon atoms, or -A6-Qa, R8 represents a lower alkyl group having 1 to 4 carbon atoms, R6\u2032 has the same meaning as R6, or binds to R6 to form a 3- to 6-membered ring together with the nitrogen atom to which they bind to represent a saturated nitrogen-containing cycloalkyl group or morpholino group, symbol p in Rc represents an integer of 2 to 4, A4 represents a single bond, methylene, or ethylene, A5 represents \u2014C(O)\u2014, \u2014C(S)\u2014, or \u2014S(O)2\u2014, Rd represents hydrogen atom, an alkyl group having 1 to 8 carbon atoms, or Qa, Re represents an alkyl group having 1 to 8 carbon atoms, -A6-Qa, \u2014(CH2)iR14, \u2014OR28, \u2014SR28, or \u2014N(R29)(R30), symbol i represents an integer of 1 to 3, R14 represents hydroxyl group, an alkoxy group having 1 to 4 carbon atoms, carboxyl group, or an N,N-dialkylcarbamoyl group having 1 to 4 carbon atoms, R28 represents an alkyl group having 1 to 8 carbon atoms, or -A6-Qa, R29 represents an alkyl group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 1 to 4 carbon atoms, or -A6-Qa, R30 represents hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms, or binds to R29 to form a 3- to 6-membered ring together with the nitrogen atom to which they bind to represent a saturated nitrogen-containing cycloalkyl group or morpholino group,
Rz has the same meaning as Rx, or Rz represents methyl group, ethyl group, or -A5-Re, Ry represents hydrogen atom, an alkyl group having 1 to 8 carbon atoms, or -A6-Qp, or Ry may bind to Rz to form, together with a nitrogen atom to which they bind, a saturated or unsaturated 3 to 7-membered nitrogen-containing cyclic group, wherein said nitrogen-containing cyclic group may optionally be substituted with one or two lower alkyl groups having 1 to 4 carbon atoms wherein said two alkyl groups may be the same or different,
AR is naphthalen-2-yl group, naphthalen-1-yl group, benzofuran-5-yl group, benzofuran-4-yl group, benzofuran-2-yl group, benzobthiophen-5-yl group, benzobthiophen-4-yl group, benzobthiophen-2-yl group, indol-5-yl group, indol-4-yl group, indol-6-yl group, benzothiazol-6-yl group, benzothiazol-7-yl group, benzothiazol-5-yl group, benzothiazol-4-yl group, dihydro-3H-benzothiazol-6-yl group, dihydro-3H-benzothiazol-7-yl group, dihydro-3H-benzothiazol-5-yl group, dihydro-3H-benzothiazol-4-yl group, quinolin-6-yl group, quinolin-3-yl group, quinolin-5-yl group, quinolin-7-yl group, dihydro-1H-quinolin-6-yl group, dihydro-1H-quinolin-5-yl group, benzodisothiazol-5-yl group, benzodisothiazol-4-yl group, benzodisothiazol-6-yl group, benzodisothiazol-7-yl group, 1H-indazol-5-yl group, 1H-indazol-4-yl group, 1H-indazol-6-yl group, benzocisothiazol-5-yl group, benzocisothiazol-4-yl group, benzocisothiazol-6-yl group, benzocisothiazol-7-yl group, 2H-indazol-5-yl group, 2H-indazol-4-yl group, 2H-indazol-6-yl group, imidazo1,2-apyridin-6-yl group, imidazo1,2-apyridin-7-yl group, 1H-pyrrolo2,3-bpyridin-5-yl group, 1H-pyrrolo2,3-bpyridin-4-yl group, isoquinolin-6-yl group, isoquinolin-3-yl group, isoquinolin-5-yl group, isoquinolin-7-yl group, dihydro-2H-isoquinolin-6-yl group, dihydro-2H-isoquinolin-5-yl group, cinnolin-6-yl group, cinnolin-5-yl group, quinazolin-6-yl group, quinazolin-7-yl group, quinazolin-5-yl group, quinoxalin-2-yl group, quinoxalin-6-yl group, quinoxalin-5-yl group, 1H-benzimidazol-5-yl group, 1H-benzimidazol-4-yl group, benzoxazol-5-yl group, benzoxazol-6-yl group, benzoxazol-4-yl group, benzoxazol-7-yl group, 1H-pyrrolo3,2-bpyridin-5-yl group, 1H-pyrrolo3,2-bpyridin-6-yl group, benzo1,2,5thiadiazol-5-yl group, benzo1,2,5thiadiazol-4-yl group, 1H-benzotriazol-5-yl group, 1H-benzotriazol-4-yl group, 1,3-dihydropyrrolo2,3-bpyridin-5-yl group, 1,3-dihydropyrrolo2,3-bpyridin-4-yl group, 1,3-dihydrobenzimidazol-5-yl group, 1,3-dihydrobenzimidazol-4-yl group, dihydro-3H-benzoxazol-6-yl group, dihydro-3H-benzoxazol-7-yl group, dihydro-3H-benzoxazol-5-yl group, dihydro-3H-benzoxazol-4-yl group, phthalazin-6-yl group, phthalazin-5-yl group, 1,8naphthalidin-3-yl group, 1,8naphthalidin-4-yl group, 1,5naphthalidin-3-yl group, 1,5naphthalidin-4-yl group, 1H-pyrrolo3,2-cpyridin-6-yl group, 1H-pyrrolo3,2-cpyridin-4-yl group, 1H-pyrrolo2,3-cpyridin-5-yl group, 1H-pyrrolo2,3-cpyridin-4-yl group, 1H-pyrazolo4,3-bpyridin-5-yl group, 1H-pyrazolo4,3-bpyridin-6-yl group, 1H-pyrazolo4,3-cpyridin-6-yl group, 1H-pyrazolo4,3-cpyridin-4-yl group, 1H-pyrazolo3,4-cpyridin-5-yl group, 1H-pyrazolo3,4-cpyridin-4-yl group, 1H-pyrazolo3,4-bpyridin-5-yl group, 1H-pyrazolo3,4-bpyridin-4-yl group, 1,2,4triazolo4,3-apyridin-6-yl group, 1,2,4triazolo4,3-apyridin-7-yl group, thieno3,2-cpyridin-2-yl group, thieno3,2-cpyridin-3-yl group, thieno3,2-cpyridin-6-yl group, thieno3,2-bpyridin-2-yl group, thieno3,2-bpyridin-3-yl group, thieno3,2-bpyridin-5-yl group, thieno3,2-bpyridin-6-yl group, 1H-thieno3,2-cpyrazol-5-yl group, 1H-thieno3,2-cpyrazol-4-yl group, benzodisoxazol-5-yl group, benzodisoxazol-4-yl group, benzodisoxazol-6-yl group, benzodisoxazol-7-yl group, benzocisoxazol-5-yl group, benzocisoxazol-4-yl group, benzocisoxazol-6-yl group, benzocisoxazol-7-yl group, indolizin-7-yl group, indolizin-6-yl group, indolizine-8-yl group, 1,3-dihydroindol-5-yl group, 1,3-dihydroindol-4-yl group, 1,3-dihydroindol-6-yl group, 1H-pyrazolo3,4-dthiazol-5-yl group, 2H-isoindol-5-yl group, 2H-isoindol-4-yl group, 1,2,4triazolo1,5-apyrimidin-6-yl group, 1H-pyrazolo3,4-bpyrazin-5-yl group, 1H-imidazo4,5-bpyrazin-5-yl group, 7H-purin-2-yl group, 4H-chromen-6-yl group, or 4H-chromen-5-yl group, wherein the aforementioned groups may be substituted with one of Xa or two or more of the same or different Xa, Xa represents a linear or branched saturated alkyl group having 1 to 4 carbon atoms, a saturated cyclic alkyl group having 3 to 7 carbon atoms, oxo group, thioxo group, fluorine atom, chlorine atom, trifluoromethyl group, \u2014(CH2)iR14, \u2014OR10, \u2014N(R11)(R12), \u2014SO2R13, or \u2014COR27, R10 represents hydrogen atom, a lower alkyl group having 1 to 4 carbon atoms, or \u2014(CH2)iR14, R11 represents hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms, R12 represents hydrogen atom, a lower alkyl group having 1 to 4 carbon atoms, a hydroxyalkyl group having 2 to 4 carbon atoms, \u2014COR15, or \u2014SO2R16, or binds to R11 to form a 3- to 6-membered ring together with the nitrogen atom to which they bind to represent a saturated nitrogen-containing cycloalkyl group or morpholino group, R15 represents a lower alkyl group having 1 to 4 carbon atoms, a hydroxyalkyl group having 2 to 4 carbon atoms, amino group, a mono- or dialkylamino group having 1 to 4 carbon atoms, or -A6-Qa, R13 and R16 independently represent a lower alkyl group having 1 to 4 carbon atoms, amino group, or a mono- or dialkylamino group having 1 to 4 carbon atoms, R27 represents hydrogen atom, hydroxyl group, an alkoxy group having 1 to 4 carbon atoms, a lower alkyl group having 1 to 4 carbon atoms, amino group, or a mono- or dialkylamino group having 1 to 4 carbon atoms,
Y represents hydrogen atom, a lower alkyl group having 1 to 4 carbon atoms, \u2014(CH2)mN(R18)(R19), or \u2014C(R20)2OC(O)A3R21, symbol m represents an integer of 2 or 3, R18 is the same as R19, or binds to R19 to form a 3- to 6-membered ring together with the nitrogen atom to which they bind to represent a saturated nitrogen-containing cycloalkyl group or morpholino group, R19 represents methyl group, ethyl group, or propyl group, R20 represents hydrogen atom, methyl group, ethyl group, or propyl group, R21 represents a lower alkyl group having 1 to 4 carbon atoms, a cyclic saturated alkyl group having 3 to 6 carbon atoms, or phenyl group, and A3 represents a single bond, or oxygen atom,
provided that the following compounds are excluded:
the compound wherein AR is a residue of naphthalene, benzofuran, benzobthiophene, indole, benzothiazole, dihydro-3H-benzothiazole, quinoline, dihydro-1H-quinoline, benzodisothiazole, 1H-indazole, benzocisothiazole, 2H-indazole, imidazo1,2-apyridine, 1H-pyrrolo2,3-bpyridine, isoquinoline, or dihydro-2H-isoquinoline, wherein the aforementioned residue may be substituted with one of Xa or two or more of the same or different Za;

the compound wherein Link is \u2014(CH2)n\u2014, AR binds to C3 in the aromatic ring (E), Rs binds to C4 in the aromatic ring (E), C5 is a ring-constituting carbon atom substituted with Zx, or an unsubstituted ring-constituting carbon atom, C2 and C6 are unsubstituted ring-constituting atoms, Rx is \u2014O\u2014Rx, and Rx is a linear or branched saturated alkyl group having 3 to 8 carbon atoms, or Rx is Ra or Rb.
3. The compound or salt thereof according to claim 2, wherein Link is \u2014(CH2)n\u2014, n is an integer of 1 to 3, Rz has the same meaning as that of Rx or represents -A5-Re when Rs is \u2014N(Ry)(Rz), and Ry is hydrogen atom, an alkyl group having 1 to 8 carbon atoms, or A6-Qp, or Ry binds to Rz to form, together with a nitrogen atom to which they bind, a saturated or unsaturated 3 to 7-membered nitrogen-containing cyclic group.
4. The compound or salt thereof according to claim 3, wherein Rs is -D-Rx or \u2014N(Ry)(Rz), D is a single bond, oxygen atom, sulfur atom, \u2014S(O)\u2014, \u2014S(O)2\u2014, or \u2014C(O)\u2014, Rx is a linear or branched saturated alkyl group having 3 to 8 carbon atoms, or Ra, Rb, or Rc, k in Ra is 0 or an integer of 1 to 3, R1 is a saturated cycloalkyl group having 3 to 7 carbon atoms or a condensed saturated cycloalkyl group having 6 to 8 carbon atoms, R1 may be substituted with one of lower alkyl group having 1 to 4 carbon atoms or two or more of the same or different lower alkyl groups having 1 to 4 carbon atoms, Q in Rb is phenyl group, thienyl group, furyl group, pyrrolyl group, pyridyl group, oxazolyl group, isoxazolyl group, thiazolyl group, isothiazolyl group, imidazolyl group, pyrazolyl group, oxadiazolyl group, thiadiazolyl group, triazolyl group, tetrazolyl group, naphthyl group, tetrahydronaphthyl group, indanyl group, indenyl group, quinolyl group, isoquinolyl group, indolyl group, benzofuryl group, benzothienyl group, benzimidazolyl group, benzoxazolyl group, benzothiazolyl group, indazolyl group, 4H-chromenyl group, dihydrobenzodioxyl group, benzoisoxazolyl group, pyrrolopyridinyl group, pyrazolopyridinyl group, triazolopyridinyl group, thienopyridinyl group, thienopyrazolyl group, 1,3-dihydrobenzimidazole group, dihydro-3H-benzoxazole group, or dihydro-3H-benzothiazole group (the aforementioned groups bond to A2 at an arbitrary position on the rings), A1 is a single bond or an alkylene (a) having 1 to 3 carbon atoms, the alkylene (a) may be substituted with a lower alkyl group having 1 to 4 carbon atoms or phenyl group, A2 is a single bond, oxygen atom, sulfur atom, \u2014S(O)\u2014, \u2014S(O)2\u2014, or \u2014N(R4)\u2014 (provided that when A2 represents oxygen atom, sulfur atom, \u2014S(O)\u2014, \u2014S(O)2\u2014, or \u2014N(R4)\u2014, A1 represents ethylene or trimethylene), R2 and R3 independently represent hydrogen atom, a linear or branched saturated alkyl group having 1 to 4 carbon atoms, oxo group, thioxo group, fluorine atom, chlorine atom, bromine atom, trifluoromethyl group, \u2014OR5, \u2014N(R6)(R6\u2032), \u2014NHCOR7, \u2014NHSO2R8, or -A6-Qa, or they bind to each other to represent methylenedioxy group, Qa is phenyl group, pyridyl group, oxazolyl group, isoxazolyl group, thiazolyl group, isothiazolyl group, imidazolyl group, pyrazolyl group, oxadiazolyl group, thiadiazolyl group, triazolyl group, tetrazolyl group, naphthyl group, indanyl group, indenyl group, quinolyl group, isoquinolyl group, indolyl group, benzofuryl group, benzothienyl group, benzimidazolyl group, benzoxazolyl group, benzothiazolyl group, or indazolyl group wherein the aforementioned groups may be substituted with one of T1 or two or more of the same or different T1, and bind to A6 at an arbitrary position on the rings, R4 and R6 independently represent hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms, R5 and R7 independently represent hydrogen atom, a lower alkyl group having 1 to 4 carbon atoms, or -A6-Qa, R8 is a lower alkyl group having 1 to 4 carbon atoms, R6\u2032 has the same meaning as R6, or binds to R6 to form a 3- to 6-membered ring together with the nitrogen atom to which they bind to form a saturated nitrogen-containing cycloalkyl group or morpholino group, p in Rc is an integer of 2 to 4, A4 is a single bond or methylene or ethylene, A5 is \u2014C(O)\u2014, \u2014C(S)\u2014, or \u2014S(O)2\u2014, Rd is hydrogen atom, an alkyl group having 1 to 8 carbon atoms, or Qa, Re is an alkyl group having 1 to 8 carbon atoms, -A6-Qa, \u2014(CH2)iR14, \u2014OR28, \u2014SR28, or \u2014N(R29)(R30), i is an integer of 1 to 3, R14 is hydroxyl group, an alkoxy group having 1 to 4 carbon atoms, carboxyl group, or an N,N-dialkylcarbamoyl group having 1 to 4 carbon atoms, R28 is an alkyl group having 1 to 8 carbon atoms or -A6-Qa, R29 is an alkyl group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 1 to 4 carbon atoms, or -A6-Qa group, R30 is hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms, or binds to R29 to form a 3- to 6-membered ring together with the nitrogen atom to which they bind to form a saturated nitrogen-containing cycloalkyl group or morpholino group, Rz has the same meaning as Rx, or is -A5-Re, and Ry is hydrogen atom, an alkyl group having 1 to 8 carbon atoms, or -A6-Qp, or binds to Rz to form a saturated or unsaturated nitrogen-containing cyclic substituent having 3 to 7 atoms together with nitrogen atom to which they bind.
5. The compound or salt thereof according to claim 3, wherein Rs is \u2014O\u2014Rx.
6. The compound or salt thereof according to claim 3, wherein AR binds to C3 in the aromatic ring (E), and Rs binds to one of the ring-constituting carbon atoms C4, C5, and C6.
7. The compound or salt thereof according to claim 3, wherein AR binds to C2 in the aromatic ring (E), and Rs binds to one of the ring-constituting carbon atoms C3, C4, and C5.
8. The compound or salt thereof according to claim 6, wherein Rs is \u2014O\u2014Rx, and all of C2, C3, C4, C5, and C6 in the aromatic ring (E) are not replaced with V.
9. The compound or salt thereof according to claim 7, wherein n is an integer of 2, and Y is hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms.
10. The compound or salt thereof according to claim 6, wherein Rs binds to the ring-constituting carbon atom C5 or C6 in the aromatic ring (E).
11. The compound or salt thereof according to claim 10, wherein Rs is \u2014O\u2014Rx, and all of C2, C3, C4, C5, and C6 in the aromatic ring (E) are not replaced with V.
12. The compound or salt thereof according to claim 11, wherein n is an integer of 2, and Y is hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms.
13. The compound or salt thereof according to claim 6, wherein Rs binds to C4 in the aromatic ring (E), and C6 is replaced with V.
14. The compound or salt thereof according to claim 13, wherein n is an integer of 2, V is carbon atom substituted with Zx, D is oxygen atom, and Y is hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms.
15. The compound or salt thereof according to claim 6, wherein Rs binds to C4 in the aromatic ring (E), C5 is nitrogen atom, and C2 and C6 are unsubstituted ring-constituting carbon atoms, or wherein Rs binds to C4 in the aromatic ring (E), C5 is a ring-constituting carbon atom substituted with Zx, or an unsubstituted ring-constituting carbon atom, C2 and C6 are unsubstituted ring-constituting carbon atoms, and Rs is \u2014N(Ry)(Rz), or wherein Rs binds to C4 in the aromatic ring (E), C5 is a ring-constituting carbon atom substituted with Zx, or an unsubstituted ring-constituting carbon atom, C2 and C6 are unsubstituted ring-constituting carbon atoms, Rs is -D-Rx, and D is a single bond, sulfur atom, \u2014S(O)\u2014, \u2014S(O)2\u2014, or \u2014C(O)\u2014.
16. The compound or salt thereof according to claim 15, wherein Rs binds to C4 in the aromatic ring (E), C5 is nitrogen atom, and C2 and C6 are unsubstituted ring-constituting carbon atoms.
17. The compound or salt thereof according to claim 16, wherein n is an integer of 2, Rs is \u2014O\u2014Rx, and Y is hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms.
18. The compound or salt thereof according to claim 15, wherein Rs binds to C4 in the aromatic ring (E), C5 is a ring-constituting carbon atom substituted with Zx, or an unsubstituted ring-constituting carbon atom, C2 and C6 are unsubstituted ring-constituting carbon atoms, and Rs is \u2014N(Ry)(Rz).
19. The compound or salt thereof according to claim 2, wherein Link is \u2014(CH2)n\u2014, n is an integer of 1 to 3, C2 and C6 in the aromatic ring (E) are unsubstituted ring-constituting carbon atoms, AR binds to C3 in the aromatic ring (E), and Rs is \u2014N(Ry)(Rz) and binds to C4 in the aromatic ring (E).
20. The compound or salt thereof according to claim 19, wherein n is 2, and C5 is carbon atom substituted with Zx or unsubstituted ring-constituting carbon atom.
21. The compound or salt thereof according to claim 19, wherein Rz is a linear or branched saturated alkyl group having 1 to 8 carbon atoms, or Rz is Ra, Rb, or Rc, k in Ra is 0 or an integer of 1 to 3, R1 is a saturated cyclic alkyl group having 3 to 7 carbon atoms or a condensed saturated cyclic alkyl group having 6 to 8 carbon atoms, R1 may be substituted with one of lower alkyl group having 1 to 4 carbon atoms or two or more of the same or different lower alkyl groups having 1 to 4 carbon atoms, Q in Rb is phenyl group, thienyl group, furyl group, pyrrolyl group, pyridyl group, oxazolyl group, isoxazolyl group, thiazolyl group, isothiazolyl group, imidazolyl group, pyrazolyl group, oxadiazolyl group, thiadiazolyl group, triazolyl group, tetrazolyl group, naphthyl group, tetrahydronaphthyl group, indanyl group, indenyl group, quinolyl group, isoquinolyl group, indolyl group, benzofuryl group, benzothienyl group, benzimidazolyl group, benzoxazolyl group, benzothiazolyl group, indazolyl group, 4H-chromenyl group, dihydrobenzodioxyl group, benzoisoxazolyl group, pyrrolopyridinyl group, pyrazolopyridinyl group, triazolopyridinyl group, thienopyridinyl group, thienopyrazolyl group, 1,3-dihydrobenzimidazole group, dihydro-3H-benzoxazole group, or dihydro-3H-benzothiazole group, wherein the aforementioned groups binds to A2 at an arbitrary position, A1 is a single bond or an alkylene (a) having 1 to 3 carbon atoms, the alkylene (a) may be substituted with a lower alkyl group having 1 to 4 carbon atoms or phenyl group, A2 is a single bond, oxygen atom, sulfur atom, \u2014S(O)\u2014, \u2014S(O)2\u2014, or \u2014N(R4)\u2014, provided that when A2 represents oxygen atom, sulfur atom, \u2014S(O)\u2014, \u2014S(O)2\u2014, or \u2014N(R4)\u2014, A1 represents ethylene or trimethylene, R2 and R3 independently represent hydrogen atom, a linear or branched saturated alkyl group having 1 to 4 carbon atoms, oxo group, thioxo group, fluorine atom, chlorine atom, bromine atom, trifluoromethyl group, \u2014OR5, \u2014N(R6)(R6\u2032), \u2014NHCOR7, \u2014NHSO2R8, or -A6-Qa, or they bind to each other to represent methylenedioxy group, Qa is phenyl group, pyridyl group, oxazolyl group, isoxazolyl group, thiazolyl group, isothiazolyl group, imidazolyl group, pyrazolyl group, oxadiazolyl group, thiadiazolyl group, triazolyl group, tetrazolyl group, naphthyl group, indanyl group, indenyl group, quinolyl group, isoquinolyl group, indolyl group, benzofuryl group, benzothienyl group, benzimidazolyl group, benzoxazolyl group, benzothiazolyl group, or indazolyl group, wherein these groups may be substituted with one of T1 or two or more of the same or different T1, and bind to A6 at an arbitrary position on the ring, R4 and R6 independently represent hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms, R5 and R7 independently represent hydrogen atom, a lower alkyl group having 1 to 4 carbon atoms, or -A6-Qa, R8 is a lower alkyl group having 1 to 4 carbon atoms, R6\u2032 has the same meaning as R6, or binds to R6 to form a 3- to 6-membered ring together with the nitrogen atom to which they bind to form a saturated nitrogen-containing cycloalkyl group or morpholino group, p in Rc is an integer of 2 to 4, A4 is a single bond or methylene or ethylene, A5 is \u2014C(O)\u2014, \u2014C(S)\u2014, or \u2014S(O)2\u2014, Rd is hydrogen atom, an alkyl group having 1 to 8 carbon atoms, or Qa, Re is an alkyl group having 1 to 8 carbon atoms, -A6-Qa, \u2014(CH2)iR14, \u2014OR28, \u2014SR28, or \u2014N(R29)(R30), i is an integer of 1 to 3, R14 is hydroxyl group, an alkoxy group having 1 to 4 carbon atoms, carboxyl group, or an N,N-dialkylcarbamoyl group having 1 to 4 carbon atoms, R28 is an alkyl group having 1 to 8 carbon atoms or -A6-Qa, R29 is an alkyl group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 1 to 4 carbon atoms, or -A6-Qa group, R30 is hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms, or binds to R29 to form a 3- to 6-membered ring together with the nitrogen atom to which they bind to form a saturated nitrogen-containing cycloalkyl group or morpholino group, and Ry is hydrogen atom, an alkyl group having 1 to 8 carbon atoms, or binds to Rz to form a saturated or unsaturated nitrogen-containing cyclic substituent having 3 to 7 atoms together with nitrogen atom to which they binds and said nitrogen-containing cyclic substituent may be substituted with one or two lower alkyl groups having 1 to 4 carbon atoms wherein said two alkyl groups may be the same or different.
22. The compound or salt thereof according to claim 15, wherein Rs binds to C4 in the aromatic ring (E), C5 is a ring-constituting carbon atom substituted with Zx, or an unsubstituted ring-constituting carbon atom, C2 and C6 are unsubstituted ring-constituting carbon atoms, Rs is -D-Rx, and D is a single bond, sulfur atom, \u2014S(O)\u2014, \u2014S(O)2\u2014, or \u2014C(O)\u2014.
23. The compound or salt thereof according to claim 6, wherein AR binds to C3 in the aromatic ring (E), C5 is a ring-constituting carbon atom substituted with Zx, or an unsubstituted ring-constituting carbon atom, C2 and C6 are unsubstituted ring-constituting carbon atoms, Rs is -D-Rx, and D is a single bond, sulfur atom, \u2014S(O)\u2014, \u2014S(O)2\u2014, or C(O)\u2014.
24. The compound or salt thereof according to claim 22, wherein Rs is -D-Rx, and D is a single bond.
25. The compound or salt thereof according to claim 22, wherein n is an integer of 2, and Y is hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms.
26. The compound or salt thereof according to claim 6, wherein Link is \u2014(CH2)n\u2014, n is an integer of 2, AR binds C3 in the aromatic ring (E), Rs binds to C4 in the aromatic ring (E), C5 is a ring-constituting carbon atom substituted with the substituent Zx, or an unsubstituted ring-constituting carbon atom, C2 and C6 are unsubstituted ring-constituting carbon atoms, Rs is -D-Rx, D is a single bond, sulfur atom, S(O)\u2014, \u2014S(O)2\u2014, or C(O)\u2014, and Y is hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms.
27. The compound or salt thereof according to claim 6, wherein Link is \u2014(CH2)n\u2014, n is an integer of 2, AR binds C3 in the aromatic ring (E), Rs binds to C4 in the aromatic ring (E), C5 may be replaced with V, C2 and C6 are unsubstituted ring-constituting carbon atoms, Rs is -D-Rx, D is a single bond, sulfur atom, S(O)\u2014, \u2014S(O)2\u2014, or C(O)\u2014, and Y is hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms.
28. The compound or salt thereof according to claim 6, wherein n is an integer of 2, Rs binds to C4 in the aromatic ring (E), C5 is a carbon atom substituted with \u2014N(Rn1)(Rn2), provided that one of Rn1 and Rn2 is a substituent other than hydrogen atom, C2 and C6 are unsubstituted ring-constituting carbon atoms, Rs is \u2014O\u2014Rx, and Y is hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms.
29. The compound or salt thereof according to claim 6, wherein n is an integer of 2, Rs binds to C4 in the aromatic ring (E), C5 is a ring-constituting carbon atom substituted with the substituent Zx, or an unsubstituted ring-constituting carbon atom, C2 and C6 are unsubstituted ring-constituting carbon atoms, Rs is \u2014O\u2014Rc, and Y is hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms.
30. A medicament containing the compound according to claim 3 or a pharmacologically acceptable salt thereof as an active ingredient together with a pharmaceutically acceptable carrier.
31. A medicament containing the compound according to claim 15 or a pharmacologically acceptable salt thereof as an active ingredient together with a pharmaceutically acceptable carrier.
32. An agent for inhibiting production of a prostaglandin andor leukotriene, which comprises the compound according to claim 3 or a pharmacologically acceptable salt thereof as an active ingredient together with a pharmaceutically acceptable carrier.
33. An agent for inhibiting production of a prostaglandin andor leukotriene, which comprises the compound according to claim 15 or a pharmacologically acceptable salt thereof as an active ingredient together with a pharmaceutically acceptable carrier.
34. An agent for therapeutic treatment of pulmonary fibrosis which comprises the compound according to claim 1 or a pharmacologically acceptable salt thereof as an active ingredient together with a pharmaceutically acceptable carrier.
35. The compound or salt according to claim 23, wherein Rs is -D-Rx and D is a single bond.
36. The compound or salt thereof according to claim 23, wherein n is an integer of 2, and Y is hydrogen atom or lower alkyl group having 1 to 4 carbon atoms.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of forming an elevated containment structure surrounding a surface of a semiconductor wafer comprising:
depositing a layer of liquid material on the surface of the semiconductor wafer;
selectively curing a portion of the layer of the liquid material along a peripheral edge of the surface of the semiconductor wafer to at least a semisolid state to form a first layer of the elevated containment structure bonded to the surface of the semiconductor wafer;
depositing at least another layer of the liquid material on the surface of the semiconductor wafer; and
selectively curing a portion of the at least another layer of the liquid material along the peripheral edge of the surface of the semiconductor wafer to at least a semisolid state to form at least another layer of the elevated containment structure bonded to and superimposed over the first layer of the elevated containment structure.
2. The method of claim 1, wherein selectively curing the portion of the layer of the liquid material and the portion of the at least another layer of the liquid material to at least a semisolid state comprises exposing the liquid material to radiant energy.
3. The method of claim 2, wherein the liquid material is selected to comprise a photocurable polymer liquid.
4. The method of claim 3, wherein the photocurable polymer liquid is selected to comprise a photocurable polymer liquid with substantially no sodium content.
5. The method of claim 1, further comprising forming the elevated containment structure in a substantially ring-shaped pattern surrounding the surface of the semiconductor wafer.
6. The method of claim 5, further comprising forming the elevated containment structure with a width of between about 0.25 mm and about 10 mm.
7. The method of claim 5, further comprising forming the elevated containment structure with a height of between about 1 \u03bcm and about 200 \u03bcm.
8. The method of claim 1, wherein depositing the layer of the liquid material and the at least another layer of the liquid material on the surface of the semiconductor wafer comprises positioning the semiconductor wafer at consecutive depths below a surface of a volume of the liquid material contained within a tank.
9. The method of claim 8, wherein selectively curing the portion of the layer of the liquid material and the portion of the at least another layer of the liquid material to at least a semisolid state comprises exposing a portion of the liquid material to radiant energy at each consecutive depth of the semiconductor wafer below the surface of the volume of the liquid material.
10. The method of claim 1, wherein depositing the layer of the liquid material and the at least another layer of the liquid material on the surface of the semiconductor wafer comprises depositing the liquid material on the semiconductor wafer with a spin coating apparatus.
11. The method of claim 10, wherein selectively curing the portion of the layer of the liquid material and the portion of the at least another layer of the liquid material to at least a semisolid state comprises exposing the liquid material to radiant energy provided by a WEE system associated with the spin coating apparatus.
12. The method of claim 11 wherein exposing the liquid material to radiant energy comprises passing the peripheral edge of the surface of the semiconductor wafer under a focused beam of radiant energy provided by the WEE system.
13. The method of claim 11, wherein exposing the liquid material to radiant energy comprises positioning an opaque plate over a central portion of the surface of the semiconductor wafer and simultaneously flooding the entire peripheral edge of the surface of the semiconductor wafer with the radiant energy provided by the WEE system.
14. The method of claim 13, further comprising moving at least one of a dispensing nozzle of the spin coating apparatus and a source of the radiant energy provided by the WEE system prior to exposing the liquid material to the radiant energy.
15. The method of claim 1, further comprising forming a photoresist over the surface of the semiconductor wafer and forming the elevated containment structure on the photoresist.
16. The method of claim 1, further comprising forming a photoresist over the surface of the semiconductor wafer after forming the elevated containment structure.
17. The method of claim 1, further comprising:
forming a photoresist over the surface of the semiconductor wafer; and
forming the elevated containment structure from a liquid material used to form the photoresist.
18. The method of claim 17, wherein the liquid material used to form the photoresist is selected to comprise a negative acting photoresist material.
19. The method of claim 1, further comprising forming the elevated containment structure on a surface of the semiconductor wafer having a plurality of bond pads.
20. The method of claim 19, further comprising:
containing a volume of the liquid material within the elevated containment structure; and
curing the volume of the liquid material to an at least semisolid state to form a CSP sealing layer over the surface of the semiconductor wafer.
21. The method of claim 20, further comprising forming a plurality of apertures in the CSP sealing layer to expose the plurality of bond pads on the surface of the semiconductor wafer.
22. The method of claim 21, wherein forming the plurality of apertures in the CSP sealing layer comprises leaving portions of the liquid material overlying the plurality of bond pads uncured when forming the CSP sealing layer.
23. The method of claim 21, wherein forming the plurality of apertures in the CSP sealing layer comprises etching the CSP sealing layer after curing the volume of the liquid material.
24. A spin coating apparatus, comprising:
a rotatable chuck configured to receive and hold a semiconductor wafer;
a nozzle configured to dispense a liquid material onto a surface of the semiconductor wafer held in the rotatable chuck; and
a WEE system configured to direct radiant energy along a peripheral edge of the surface of the semiconductor wafer held in the rotatable chuck.
25. The spin coating apparatus of claim 24, wherein the WEE system comprises an energy source configured to direct a focused beam of radiant energy onto the peripheral edge of the surface of the semiconductor wafer held in the rotatable chuck.
26. The spin coating apparatus of claim 25, wherein the energy source comprises one of a laser, a light emitting diode, and a lamp.
27. The spin coating apparatus of claim 24, wherein the WEE system comprises:
an opaque plate configured to be positioned over a central portion of the surface of the semiconductor wafer held in the rotatable chuck; and
an energy source configured to flood the entire peripheral edge of the surface of the semiconductor wafer with radiant energy.
28. The spin coating apparatus of claim 27, further comprising a mechanism for moving at least one of the nozzle and the energy source with respect to the rotatable chuck.
29. A method of processing a wafer by immersion lithography, comprising:
providing a semiconductor wafer having an elevated containment structure bonded thereto, wherein the elevated containment structure surrounds a surface of the semiconductor wafer;
positioning the surface of the semiconductor wafer beneath a lens of an optical system;
at least partially filling an interior of the elevated containment structure with an immersion liquid to cover the surface of the semiconductor wafer with the immersion liquid;
contacting the immersion liquid with the lens of the optical system; and
directing radiant energy onto the surface of the semiconductor wafer by passing the radiant energy through the lens and the immersion liquid.
30. The method of claim 29, wherein the surface of the semiconductor wafer is covered with a layer of circuit material and a photoresist overlying the layer of circuit material, and further comprising:
curing a portion of the photoresist with the radiant energy passed through the lens and the immersion liquid;
draining the immersion liquid from the interior of the elevated containment structure after curing the portion of the photoresist;
applying a developing solution to remove an uncured portion of the photoresist, wherein the cured portion of the photoresist forms a mask overlying the layer of circuit material;
etching a portion of the layer of circuit material exposed through the mask; and
removing the mask from the layer of circuit material.
31. The method of claim 30, further comprising forming the elevated containment structure over the photoresist.
32. The method of claim 31, wherein applying the developing solution to remove the uncured portion of the photoresist detaches the elevated containment structure from the semiconductor wafer.
33. The method of claim 30, further comprising covering the surface of the semiconductor wafer with the layer of circuit material and the photoresist after forming the elevated containment structure on the semiconductor wafer.
34. The method of claim 33, further comprising detaching the elevated containment structure from the semiconductor wafer with a solvent after applying the developing solution to remove the uncured portion of the photoresist.
35. The method of claim 30, wherein the developing solution is selected to comprise a solution of about 2.8% TMAH.
36. The method of claim 29, wherein the immersion liquid is selected to comprise deionized water.
37. The method of claim 29, further comprising forming the elevated containment structure from a photocurable liquid polymer.
38. The method of claim 37, further comprising forming the elevated containment structure from a material used to form the photoresist.
39. The method of claim 38, wherein the material used to form the photoresist is selected to comprise a negative acting photoresist material.
40. The method of claim 29, further comprising forming the elevated containment structure using an STL process.
41. A semiconductor wafer assembly comprising:
an elevated containment structure bonded to a semiconductor wafer, wherein the elevated containment structure comprises bonded, superimposed layers of a material extending about a peripheral edge of the semiconductor wafer and surrounding a surface of the semiconductor wafer.
42. The semiconductor wafer assembly of claim 41, wherein the elevated containment structure comprises layers of a polymer material.
43. The semiconductor wafer assembly of claim 42, wherein the polymer material has substantially no sodium content.
44. The semiconductor wafer assembly of claim 41, wherein the surface of the semiconductor wafer is covered with a layer of circuit material and a photoresist overlying the layer of circuit material.
45. The semiconductor wafer assembly of claim 44, wherein the elevated containment structure is bonded to the photoresist.
46. The semiconductor wafer assembly of claim 44, wherein the layer of circuit material and the photoresist overlie the elevated containment structure.
47. The semiconductor wafer assembly of claim 44, wherein the elevated containment structure and the photoresist are comprised of a common material.
48. The semiconductor wafer assembly of claim 47, wherein the elevated containment structure and the photoresist comprise a negative acting photoresist material.
49. The semiconductor wafer assembly of claim 41, wherein the elevated containment structure surrounds a surface of the semiconductor wafer having a plurality of bond pads.
50. The semiconductor wafer assembly of claim 41, wherein the elevated containment structure comprises a substantially ring-shaped structure surrounding the surface of the semiconductor wafer.
51. The semiconductor wafer assembly of claim 50, wherein the elevated containment structure has a width of between about 0.25 mm and about 10 mm.
52. The semiconductor wafer assembly of claim 50, wherein the elevated containment structure has a height of between about 1 \u03bcm and about 200 \u03bcm.
53. The semiconductor wafer assembly of claim 41, further comprising a liquid at least partially filling an interior of the elevated containment structure and covering the surface of the semiconductor wafer.
54. The semiconductor wafer assembly of claim 53, wherein the liquid comprises one of a photocurable polymer and deionized water.