1460754938-9154bd64-6767-4b85-b783-9c4ce63d4065

1. A semiconductor chip comprising:
an electrode pad portion formed on a face of a substrate;
a first protection layer including a first opening through which a top face of the electrode pad portion is exposed, the first protection layer disposed on the face of the substrate and overlapping part of the electrode pad portion;
a barrier metal layer formed on the electrode pad portion;
a bump electrode on the barrier metal layer; and
a second protection layer covering a region on the first protection layer and a region on the electrode pad portion,
wherein the first protection layer has a step part formed therein as a result of the first protection layer overlapping the part of the electrode pad portion,
wherein the barrier metal layer has a circumferential end part thereof formed outward of the first opening as seen in a plan view,
wherein the bump electrode is bonded to the barrier metal layer,
wherein the barrier metal layer is on the electrode pad portion with a peripheral part of the barrier metal layer located over the second protection layer,
wherein the second protection layer has a second opening through which the top face of the electrode pad portion is exposed and that has an opening width smaller than the first opening, and
wherein a rim part of the second protection layer defining the second opening has an inclined shape, an upper surface of the second protection layer has an arc surface along a lower surface of the barrier metal layer, and a center point of a curvature of the arc surface as seen in a sectional view is located on a first protection layer side of the arc surface.
2. The semiconductor chip according to claim 1, wherein the barrier metal layer has a circumferential end part thereof formed outward of the step part as seen in a plan view and extend upwardly along the second protection layer.
3. The semiconductor chip according to claim 1, wherein a center of the barrier metal layer is lower than the rim portion of the barrier metal layer.
4. The semiconductor chip according to claim 1, wherein the second protective layer intrude into a space between the barrier metal layer and the first protective layer so that the second protective layer is interdigitate with the first protection layer.
5. The semiconductor chip according to claim 1, the bump electrode is bonded to the barrier metal layer.
6. The semiconductor chip according to claim 1, wherein the bump electrode has a portion which, as seen in a plan view, protrudes out from a side surface of the barrier metal layer.
7. The semiconductor chip according to claim 1, wherein the first opening has an opening width of about 85 \u03bcm to about 95 mm, and wherein the second opening has an opening width of about 55 \u03bcm to about 65 mm.
8. The semiconductor chip according to claim 1, wherein the second protection layer is made of polyimide.
9. A semiconductor device comprising:
the semiconductor chip according to claim 1; and
a printed circuit board on which the semiconductor chip is mounted to form an electric device.
10. A semiconductor chip comprising:
an electrode pad on a surface of a substrate;
a first protection layer disposed partially on the surface of the substrate and overlapping part of the electrode pad, the first protection layer having a first opening;
a second protection layer covering a region on the first protection layer and a region on the electrode pad, the second protection layer having a second opening that has a width smaller than a width of the first opening;
a barrier metal layer on the electrode pad, wherein an interface between the barrier metal layer and the electrode pad is located within the first opening and within the second opening,
a bump electrode bonded to the barrier metal layer, and
wherein a peripheral part of the barrier metal layer is on the second protection layer; and
wherein an upper surface of the second protection layer has an arc surface in contact with a surface of the barrier metal layer, and a center point of a curvature of the arc surface as seen in a sectional view is located on a substrate side of the arc surface, and
wherein the upper surface and a lower surface of the barrier metal layer has a curved shape extending along the second protective layer so that a center point of a curvature of the curved shape as seen in a sectional view is located on a substrate side of the curved shape.
11. The semiconductor chip according to claim 10, wherein the barrier metal layer has a circumferential end part thereof formed outward of the step part as seen in a plan view and extend upwardly along the second protection layer.
12. The semiconductor chip according to claim 10, wherein a center of the barrier metal layer is lower than a rim portion of the barrier metal layer.
13. The semiconductor chip according to claim 10, wherein the second protective layer intrude into a space between the barrier metal layer and the first protective layer so that the second protective layer is interdigitate with the first protection layer.
14. The semiconductor chip according to claim 10, the bump electrode is disposed on the barrier metal layer.
15. The semiconductor chip according to claim 10, wherein the bump electrode has a portion which, as seen in a plan view, protrudes out from a side surface of the barrier metal layer.
16. The semiconductor chip according to claim 10, wherein the first opening has an opening width of about 85 \u03bcm to about 95 mm, and wherein the second opening has an opening width of about 55 \u03bcm to about 65 mm.
17. The semiconductor chip according to claim 10, wherein the second protection layer is made of polyimide.
18. A semiconductor device comprising:
the semiconductor chip according to claim 10; and
a printed circuit board on which the semiconductor chip is mounted to form an electric device.
19. A semiconductor chip comprising:
an electrode pad on a surface of a substrate;
a first protection layer disposed partially on the surface of the substrate and overlapping part of the electrode pad, the first protection layer having a first opening;
a second protection layer covering a region on the first protection layer and a region on the electrode pad, the second protection layer having a second opening that has a width smaller than a width of the first opening;
a barrier metal layer on the electrode pad, wherein an interface between the barrier metal layer and the electrode pad is located within the first opening and within the second opening,
a bump electrode bonded to the barrier metal layer, and
wherein a peripheral part of the barrier metal layer is on the second protection layer; and
wherein an upper surface of the second protection layer has an arc surface in contact with a surface of the barrier metal layer, and a center point of a curvature of the arc surface as seen in a sectional view is located on a substrate side of the arc surface,
wherein the upper surface and a lower surface of the barrier metal layer has a curved shape extending along the second protective layer so that a center point of a curvature of the curved shape as seen in a sectional view is located on a substrate side of the curved shape,
wherein the barrier metal layer has a circumferential end part thereof formed outward of the step part as seen in a plan view and extend upwardly along the second protection layer, and
wherein a center of the barrier metal layer is lower than the rim portion of the barrier metal layer.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A self-processing integrated damage assessment sensor system comprising:
a sensor for producing signals responsive to structural anomalies;
a database module for storing data representative of the signals produced by said sensor;
an analysis module responsive to signals from said sensor and data stored in said database module for producing results describing the structural anomalies sensed by said sensor; and
a communications module for transmitting signals based at least in part on the signals produced by said analysis module,
wherein said sensor, said database module, said analysis module and said communications module are commonly housed.
2. The self-processing integrated damage assessment sensor system of claims 1, wherein said sensor comprises a passive device.
3. The self-processing integrated damage assessment sensor system of claim 2, wherein said sensor is selected from the group consisting of resistors, capacitors, and resistor-capacitor series combinations.
4. The self-processing integrated damage assessment sensor system of claim 1, wherein the sensor comprises an active device.
5. The self-processing integrated damage assessment sensor system of claim 4, wherein the sensor comprises a piezoelectric device.
6. The self-processing integrated damage assessment sensor system of claim 5, wherein the sensor comprises a piezoelectric wafer active sensor.
7. The self-processing integrated damage assessment sensor system of claim 1, further comprising:
an electromechanical impedance module configured to receive signals from said sensor, to measure a local impedance spectrum over a preselected range of frequencies, and to provide measurement data for use by said analysis module.
8. The self-processing integrated damage assessment sensor system of claim 7, wherein said database module comprises a spectral database module comprising a memory configured to receive measurement data from said electromechanical impedance module.
9. The self-processing integrated damage assessment sensor system of claim 1, wherein said communication module comprises a wireless interface module configured to transmit signals identifying selected of the signal source and signal location.
10. A method of assessing structural health using a self-contained integrated sensor system, comprising the steps of:
providing a sensor for producing signals;
measuring impedance spectra over a selected frequency ranged based on the signals;
storing data based on said step of measuring;
analyzing the measured impedance spectra to determine the presence of preselected selected signal characteristics indicative of structural health;
providing selected of said data as a portion of the measured impedance spectra in the step of analyzing; and producing signals indicative of anomalies in structural health.
11. The method of claim 10, further comprising the step of transmitting signals based at least in part on the results of the step of analyzing.
12. The method of claim 10, further comprising the step of wirelessly transmitting signals based at least in part on the results of the step of analyzing.
13. The method of claim 10, wherein the step of providing a sensor comprises providing a passive sensor.
14. The method of claim 10, wherein the step of providing a sensor comprises providing an active sensor.
15. The method of claim 14, wherein the step of providing an active sensor comprises providing a piezoelectric wafer active sensor.

1460754930-be6e0544-fd5d-4ee0-96a9-038a377981c6

What is claimed is:

1. A method for manufacturing a fiber composite structural component having a given contour by using fiber composite construction features, said method comprising the following steps:
a) using a mold core (1) having at least two separable core sections (2, 3) which together have a mold core contour closely resembling said given contour of said fiber composite structural component,
b) performing an automatic circular weaving operation, thereby applying a fiber material (5) around said mold core (1) to form a fiber material body (6),
c) removing one of said separable core sections (3) out of said fiber material body (6) to provide an empty portion of said fiber material body,
d) shaping said fiber material body (6) with the other separable core section (2) still in said fiber material body (6), into said given contour to form a semi-finished product (7),
e) impregnating said semi-finished product with a resin matrix material and curing said impregnated semi-finished product to produce said fiber composite structural component, and
f) removing the other core section (2) from said structural component.
2. The method of claim 1, wherein said impregnating and curing is performed in an RTM device.
3. The method of claim 1, further comprising performing said shaping step (d) so that said empty portion is shaped into mounting flanges (8).
4. The method of claim 1, further comprising the following steps:
a) stopping said automatic circular weaving operation when a predetermined number of plies has been applied to said mold core (1), and
b) securing at least one separately produced reinforcing member to said fiber material body (6) prior to said impregnating and curing step.
5. The method of claim 4, further comprising using as said at least one reinforcing member a prefabricated fiber material layer or fiber material fabric.
6. The method of claim 3, further comprising performing said shaping step (d) prior to said impregnating and curing step, by folding and pressing said empty portion of said fiber material body (6) against fixed surfaces of a jig or mold (17) to form said mounting flanges (8) on said fiber material body (6).
7. The method of claim 5, further comprising dimensioning said fiber material layer or fiber material fabric to protrude partially from said fiber material body (6) and, prior to said impregnating and curing step, folding a partially protruding portion (15, 15A) of said fiber material layer or fiber material fabric against said fiber material body (6) to provide at least one reinforced connector surface area.
8. The method of claim 5, comprising folding said partially protruding portion (15, 15A) against at least one end face of said fiber material body (6).
9. The method of claim 5, comprising folding said partially protruding portion against at least one side wall of said fiber material body (6).
10. The method of claim 1, further comprising performing, following said curing, an after treatment.
11. The method of claim 1, further comprising the following steps:
a) temporarily stopping said automatic circular weaving operation when a given number of plies has been applied to said mold core,
b) attaching or placing at least one separately produced reinforcing member to said fiber material body (6), and
c) continuing said automatic circular weaving operation for securing said at least one reinforcing member in said fiber material body (6).
12. The method of claim 11, further comprising using as said reinforcing member separately woven fiber fabric.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A selectively openable inflow control sub comprising:
a tubular body including a wall defining an outer surface and an inner bore, an inflow port through the wall of the tubular body, an inflow controller to control inflow through the inflow port and a sliding sleeve valve slidable within the inner bore between a closed-port position, closing the inflow port, and an open-port position, opening the inflow port to fluid flow therethrough, the sliding sleeve valve being axially moveable from the closed-port position and the open-port position by pushing the sleeve with a mill string.
2. The selectively openable inflow control sub of claim 1 wherein the sliding sleeve valve includes a mill protrusion that defines a diameter less than an outer diameter of the mill string.
3. The selectively openable inflow control sub of claim 2 wherein the diameter at the mill protrusion is less than a drift diameter.
4. The selectively openable inflow control sub of claim 2 wherein the mill protrusion is an annular protrusion.
5. The selectively openable inflow control sub of claim 2 wherein the mill protrusion has a frustoconical upper surface.
6. The selectively openable inflow control sub of claim 1 wherein the sliding sleeve valve is held in the closed-port position by a releasable lock selected to be overcome by the force applied by a mill string.
7. The selectively openable inflow control sub of claim 1 further comprising a stop wall in the inner bore and positioned downhole of the sliding sleeve valve, the stop wall positioned to stop axial movement of the sliding sleeve valve when it reaches the open-port position.
8. The selectively openable inflow control sub of claim 7 wherein the stop wall is a portion of the wall.
9. The selectively openable inflow control sub of claim 7 wherein the stop wall is an end of a sleeve valve positioned downhole of the sliding sleeve valve.
10. The selectively openable inflow control sub of claim 7 wherein the inner bore is free of obstructions to the axial sliding movement of the sleeve between the closed-port position and the stop wall.
11. The selectively openable inflow control sub of claim 1 further comprising a shifting profile on the sliding sleeve valve.
12. The selectively openable inflow control sub of claim 1 further comprising a frac port through the wall, the frac port axially spaced from the inflow port.
13. The selectively openable inflow control sub of claim 12 further comprising a sleeve valve in the inner bore and being moveable from a closed position overlying the frac port to an open position, retracted at least in part from the frac port.
14. The selectively openable inflow control sub of claim 13 further comprising a ball seat on the sleeve valve for catching a ball launched to move the sleeve valve hydraulically.
15. The selectively openable inflow control sub of claim 12 wherein the sliding sleeve valve overlies the frac port in the open-port position.
16. The selectively openable inflow control sub of claim 12 further comprising a closing sleeve moveable to overlie the frac port, when the sleeve valve is in the open position.
17. The selectively openable inflow control sub of claim 16 further comprising a first shifting profile on the sliding sleeve valve and a second shifting profile on the closing sleeve, and the first shifting profile has a form different from the second shifting profile such that a tool that engages the first shifting profile cannot engage the second shifting profile.
18. A method for a wellbore operation, the method comprising:
running a tubing string into a wellbore to a desired position for treating the wellbore;
running a mill through the tubing string to apply an axially directed force to a sliding sleeve valve to move the sliding sleeve valve axially through the tubing string from one position to another position; and removing the mill from the tubing string.
19. The method of claim 18 wherein the axially directed force is applied as the mill is run down into the tubing string.
20. The method of claim 18 wherein the sliding sleeve valve controls the open and closed condition of a fluid port and the force moves the sleeve to open or close the fluid port.
21. The method of claim 18 wherein the axially directed force moves the sliding sleeve valve to open a port controlled by the sliding sleeve valve and permitting fluid to pass from the wellbore into the tubing string through the port.
22. The method of claim 21 further comprising controlling inflow through the port.
23. The method of claim 18 wherein the axially directed force is applied to a protrusion on the sliding sleeve valve that protrudes into the path of the mill.
24. The method of claim 23 further comprising milling through the protrusion.
25. The method of claim 23 further comprising pushing the sliding sleeve valve against a stop and milling through the protrusion.
26. The method of claim 18 further comprising opening a frac port in the tubing string by applying a force to a first sliding sleeve valve for the frac port; and injecting stimulating fluids through the frac port.