Author: claimsbot

1. A mobility management entity (MME) comprising:
a first network interface which receives a tracking area update (TAU) request from a user equipment (UE);
a processing unit which translates the TAU request into a location area update (LAU) request; and
a second network interface in communication with the processing unit which sends the LAU request to a mobile switching center (MSC) selected as a tracking MSC thereby establishing the MME as the network node through which the tracking MSC will page the UE for subsequent mobile terminated voice calls, the second network interface receiving a LAU response from the tracking MSC that comprises at least information identifying one or more suitable location area identifiers (LAI(s)) to which handover is allowed and Network Resource Identifier (NRI) information, where the NRI information indicates that the tracking MSC controls the suitable LAI(s), and the processing unit translating the LAU response into a TAU response which is sent through the first network interface to the UE; and
the processing unit which triggers handover of the UE to 2G3G cells in support of mobile terminated voice calls wherein the processing unit uses a target 2G3G cell selected by an evolved NodeB (eNB) for handover where the target 2G3G cell belongs to at least one of the LAIs indicated by the suitable LAIs information.
2. The MME as described in claim 1 wherein the first network interface forwards the suitable LAIs information to the eNB controlling the LTE cell in which the UE is currently idle or active and further conveying this information to the UE during the control plane message exchange it performs with the eNB prior to the handover preparation phase being triggered if not conveyed from the MME to the UE during the TAU procedure.
3. The MME as described in claim 2 wherein the first network interface forwards an NRI information to the eNB controlling the LTE cell in which the UE is currently idle or active and further conveying this information to the UE during the control plane message exchange the UE performs with the eNB prior to the handover preparation phase being triggered if not conveyed from the MME to the UE during the TAU procedure or in the Handover from E-UTRAN command it receives from the eNB.
4. The MME as described in claim 1 wherein the processing unit proceeds with the handover preparation phase triggered by the eNB when the first network interface receives a Relocation Required message from the eNB wherein a specific target 2G3G cell is identified.
5. The MME as described in claim 4 including a third network interface and wherein the processing unit maps the Relocation Required message into a Forward Relocation Request message and the third network interface sends it to an SGSN associated with the target 2G3G cell to which the handover will be attempted.
6. The MME as described in claim 5 wherein the third network interface receives the Forward Relocation Response from the SGSN.
7. The MME as described in claim 6 wherein the first network interface sends the Relocation Command to the eNB.
8. The MME as described in claim 1 through which the UE may be paged wherein the second network interface receives a corresponding circuit switched (CS) page from the tracking MSC which then immediately forwards the CS Page to one or more eNBs when, at any point following a successful LAU procedure for a given UE, the tracking MSC detects the need to terminate a voice call for that UE.
9. The MME as described in claim 8 wherein the first network interface sends the CS Page to one or more eNBs which causes each eNB receiving a CS Page to attempt control plane message exchange with the UE to determine which eNB is actually serving the UE and the serving eNB to convey NRI information to the UE during the control plane message exchange the UE performs with the serving eNB immediately following eNB reception of the CS Page and prior to the handover preparation phase being triggered if not conveyed from the MME to the UE during the TAU procedure or within the Handover from E-UTRAN command the UE subsequently receives during the handover execution phase.
10. A method for a mobility management entity (MME) for setting up a call comprising the steps of:
receiving a tracking area update (TAU) request from a user equipment (UE);
translating the TAU into a location area update (LAU) request;
sending the LAU request to a mobile switching center (MSC) selected as a tracking MSC thereby establishing the MME as the network node through which the tracking MSC will page the UE for subsequent mobile terminated voice calls; and
receiving a LAU response from the tracking MSC that comprises at least information identifying one or more suitable location area identifiers (LAI(s)) to which handover is allowed and Network Resource Identifier (NRI) information, where the NRI information indicates that the tracking MSC controls the suitable LAI(s); and
triggering handover of the UE to 2G3G cells in support of mobile terminated voice calls wherein the MME uses a target 2G3G cell selected by an evolved NodeB (eNB) for handover where the target 2G3G cell belongs to at least one of the LAIs indicated by the suitable LAIs information.
11. The method as described in claim 10 including the step of forwarding the suitable LAIs information to the eNB controlling the LTE cell in which the UE is currently idle or active and further conveying this information to the UE during the control plane message exchange it performs with the eNB prior to the handover preparation phase being triggered if not conveyed from the MME to the UE during the TAU procedure.
12. The method as described in claim 11 including the step of forwarding an NRI information to the eNB controlling the LTE cell in which the UE is currently idle or active and further conveying this information to the UE during the control plane message exchange the UE performs with the eNB prior to the handover preparation phase being triggered if not conveyed from the MME to the UE during the TAU procedure or in the Handover from E-UTRAN command it receives from the eNB.
13. The method as described in claim 10 including the step of triggering the handover preparation phase by receiving a Relocation Required message from the eNB wherein a specific target 2G3G cell is identified.
14. The method as described in claim 13 including the step of mapping the Relocation Required message into a Forward Relocation Request message and sending it to an SGSN associated with the 2G3G cell to which the handover will be attempted.
15. The method as described in claim 14 including the step of receiving the Forward Relocation Response from the SGSN.
16. The method as described in claim 15 including the step of sending the Relocation Command to the eNB.
17. The method as described in claim 10 including the step of receiving a corresponding circuit switched (CS) page from the tracking MSC which then immediately forwards the CS Page to the eNB when, at any point following a successful LAU procedure for a given UE, the tracking MSC detects the need to terminate a voice call for that UE.
18. The method as described in claim 17 including the step of sending the CS page to the eNB which causes the eNB to convey NRI information to the UE during a control plane message exchange the UE performs with the eNB immediately following eNB reception of the CS Page and prior to the handover preparation phase being triggered if not conveyed from the MME to the UE during the TAU procedure or within the handover from E-UTRAN command the UE subsequently receives during the handover execution phase.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. An organic luminous element material comprising a compound having a partial structure represented by general formula (1):

23
wherein R1, R2 and R3 each represents a hydrogen atom or a substituent group, with the proviso that R1, R2 and R3 are not alkenyl groups; R4 and R5 each represents a hydrogen atom or a substituent group; and Ar1 represents an aryl group, a heteroaryl group or an alkenyl group.
2. An organic luminous element comprising at least one compound having the partial structure represented by general formula (1) as claimed in claim 1.
3. An organic luminous element material comprising a compound having only one partial structure represented by general formula (2):

24
wherein R21 and R22 each represents a hydrogen atom or a substituent group; R23, R24, R25 and R26 each represents a hydrogen atom or a substituent group; and Ar21 and Ar22 each represents an aryl group, a heteroaryl group or an alkenyl group.
4. An organic luminous element comprising at least one compound having only one partial structure represented by general formula (2) as claimed in claim 3.
5. An organic luminous element material comprising a compound having at least two partial structures represented by general formula (3):

25
wherein R31 represents an aryl group, a heteroaryl group, an alkenyl group or an alkynyl group; R32 represents a hydrogen atom or a substituent group; R33, R34, R35 and R36 each represents a hydrogen atom or a substituent group; and Ar31 represents an arylene group, a heteroarylene group or an alkenylene group.
6. An organic luminous element comprising at least one compound having at least two partial structures represented by general formula (3) as claimed in claim 5.
7. A compound represented by general formula (4):

26
wherein R40, R41, R42, R43 and R44 each represents a hydrogen atom or a substituent group; Ar41 represents an arylene group, a heteroarylene group or an alkenylene group; L1 represents a divalent connecting group; A represents a connecting group; n1 represents an integer of 2 or more; when n1 is 2, A may be connected through single bonds; a plurality of substituent groups (groups each having a vinylsilyl structure) connected to A may be the same or different; n2 represents 0 or 1, with the proviso that only when A is an aryl connecting group, a heteroaryl connecting group or an alkenyl connecting group and n3 is 0, n2 can be 0; and n3 represents an integer of 0 or more.
8. A compound comprising at least two partial structures represented by general formula (5):

27
wherein R51 and R53 each represents a hydrogen atom or a substituent group; R52 represents a divalent connecting group; R54 and R55 each represents a hydrogen atom or a substituent group; Ar51 represents an arylene group, a heteroarylene group or an alkenylene group; L2 represents a divalent connecting group; and n4 represents an integer of 0 or more.
9. A compound containing:
at least one partial structure represented by general formula (1):

28
wherein R1, R2 and R3 each represents a hydrogen atom or a substituent group, with the proviso that R1, R2 and R3 are not alkenyl groups; R4 and R5 each represents a hydrogen atom or a substituent group; and Ar1 represents an aryl group, a heteroaryl group or an alkenyl group; and
at lease one partial structure represented by general formula (6):

29
wherein R61, R62, R63, R64, R65, R66, R67 and R68 each represents a hydrogen atom or a substituent group.
10. A method for producing a vinylsilane compound, which comprises:
reacting a vinylsilane derivative with an aryl halide derivative, a heteroaryl halide derivative, a trifluoromethanesulfonylaryl derivative or a trifluoromethanesulfonylheteroaryl derivative in the presence of a palladium catalyst to form a carbon-carbon bond, to thereby obtain a compound represented by general formula (A):

30
wherein Ra, Rb, Rc and Rd each represents a hydrogen atom or a substituent group, with the proviso that at least one substituent group of Ra, Rb, Rc and Rd is a group represented by general formula (B):

31
wherein Re and Rf each represents a hydrogen atom or a substituent group, and Ara represents an aryl group, a heteroaryl group or an alkenyl group; and when at least two substituent groups of Ra, Rb, Rc and Rd are groups represented by general formula (B), the groups represented by general formula (B) may be the same or different.

1. A method of fitting a cochlear implant, the cochlear implant having an electrode array with multiple electrode contacts through which a pulsatile stimulation waveform having a pulse rate and a pulse width may be applied to the cochlea of the patient; and wherein the fitting method builds an M iso-loudness contour and determines a T iso-loudness contour, the method comprising:
a) setting a starting sound level to build an iso-loudness contour;
b) setting volume on a first channel until the sound is at a predetermined level;
c) adjusting volume on a second channel until the volume of sound on the second channel is similar to the volume of sound on the first channel; then
d) setting the next channel to result in the same sound volume determined for the previous channel;
e) repeating step (d) for each available channel until the stimulation level for the last channel is adjusted, and the M iso-loudness contour is built; and
f) picking one channel and determining the volume level of that one channel; and
g) generating a T-iso-loudness contour by determining the difference in the volume level measured for the one channel in step f) and the M volume level found previously for that channel and linearly shifting the M iso-loudness contour by the determined difference in volume level.
2. The method of claim 1 wherein the starting sound level is no sound.
3. The method of claim 1 wherein the sound includes a tone or tones.
4. The method of claim 1 wherein the sound includes noise.
5. The method of claim 1 wherein the sound includes speech.
6. The method of claim 1 wherein the predetermined level is a comfortable level.
7. The method of claim 1 wherein the predetermined level is a threshold level.
8. The method of claim 1 wherein at least one channel is a virtual channel.
9. The method of claim 1 wherein at least one channel is skipped.
10. A method of fitting a cochlear implant, the cochlear implant having an electrode array with multiple electrode contacts through which a pulsatile stimulation waveform having a pulse rate and a pulse width may be applied to the cochlea of the patient; and wherein the fitting method sets an iso-loudness contour from an iso-neural response contour, the method comprising:
determining an iso-neural response contour; and
linearly transposing the iso-neural contour to set an iso-loudness contour.
11. The method of claim 10 further comprising using at least one of neural response imaging and evoked auditory brainstem response to determine the iso-neural response contour.
12. The method of claim 10 further comprising
determining an M level for at least one channel;
determining a difference between the iso-neural level and the M level for the at least one channel; and
linearly transposing the iso-neural contour by the amount of the difference to set the iso-loudness contour.
13. The method of claim 10 wherein the iso-loudness contour is an M iso-loudness contour.
14. The method of claim 10 wherein the iso-loudness contour is a T iso-loudness contour.
15. A method of fitting a cochlear implant, the cochlear implant having an electrode array with multiple electrode contacts through which a pulsatile stimulation waveform having a pulse rate and a pulse width may be applied to the cochlea of the patient; and wherein the fitting method uses at least two iso-loudness contours, the method comprising:
determining a first iso-loudness response contour; and
linearly transposing the first iso-loudness contour to set a second iso-loudness contour.
16. The method of claim 15 wherein the first iso-loudness contour is an M iso-loudness contour.
17. The method of claim 16 wherein the second iso-loudness contour is a T iso-loudness contour.
18. The method of claim 15 further comprising:
determining a difference between the first iso-loudness contour level and the second iso-loudness contour using at least one channel; and
linearly transposing the first iso-loudness contour by the amount of the difference to set the second iso-loudness contour.
19. A method of fitting a cochlear implant, the cochlear implant having an electrode array with multiple electrode contacts through which a pulsatile stimulation waveform having a pulse rate and a pulse width may be applied to the cochlea of the patient; and wherein the fitting method determines an iso-loudness contour, the method comprising:
setting pulse width to about 30 \u03bcs to about 75 \u03bcs;
determining an iso-loudness contour with the set pulse width; and
linearly transposing the iso-loudness contour for use with pulse widths of about 10 \u03bcs to about 20 \u03bcs.
20. The method of claim 19 further comprising:
determining a difference between the iso-loudness contour level with the set pulse width and a comfortable volume for pulse widths of about 10 \u03bcs to about 20 \u03bcs; and
linearly transposing the iso-loudness contour by the amount of the difference.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A micromechanical structure comprising:
a silicon (Si) based substrate;
a micromechanical element formed directly on the substrate; and
an undercut formed underneath a released portion of the micromechanical element;
wherein the undercut is in the form of a recess formed in the Si based substrate.
2. The structure as claimed in claim 1, wherein the Si based substrate comprises a silicon-on-insulator (SOI) substrate.
3. The structure as claimed in claim 2, wherein a thickness of a Si overlayer of the SOI substrate is chosen for controlling a stress in the released portion of the micromechanical element.
4. The structure as claimed in claim 2 or 3, wherein the recess extends through substantially the thickness of the Si overlayer of the SOI substrate.
5. The structure as claimed in any one of claims 3 to 4, wherein the thickness is in a range of about 10 nm to about 10 \u03bcm.
6. The structure as claimed in any one of claims 2 to 5, wherein the SOI substrate is provided using wafer bonding, Separation by Implantation of Oxygen (SIMOX) or both.
7. The structure as claimed in any one of claims 2 to 6, wherein a crystalline orientation of the SOI substrate is chosen for controlling the stress in the released portion of the micromechanical element.
8. The structure as claimed in claim 7, wherein the crystalline orientation is (100) or (111).
9. The structure as claimed in claim 1, wherein the Si based substrate comprises a bulk Si substrate.
10. The structure as claimed in claim 9, wherein the bulk Si substrate comprises a crystalline orientation of (100) or (111).
11. The structure as claimed in any of the preceding claims, wherein the micromechanical element comprises one or more materials selected from a group consisting ZnO, Zn(Mg)O, Zn(Cd)O, ZnS, GaN, AlN, AlGaN, InGaN, InN, polycrystalline diamond and nanocrystalline diamond.
12. The structure as claimed in any of the preceding claims, wherein the recess is formed in the Si based substrate using a dry etch process.
13. The structure as claimed in claim 12, wherein the dry etch process comprises usage of XeF2.
14. The structure as claimed in any of the preceding claims, wherein the micromechanical element comprises an optoelectronic device.
15. The structure as claimed in any of the preceding claims, wherein the micromechanical element comprises a microelectronic device.
16. The structure as claimed in claim 14, wherein the optoelectronic device comprises a light emitting diode (LED).
17. The structure as claimed in claim 15, wherein the microelectronic device comprises one or more Field-effect transistors (FETs).
18. A method of fabricating a micromechanical structure, the method comprising the steps of:
providing a silicon (Si) based substrate;
forming a micromechanical element directly on the substrate;
forming an undercut in the form of a recess underneath a released portion of the micromechanical element; and
forming the recess in the Si based substrate.
19. The method as claimed in claim 18, wherein the Si based substrate comprises a silicon-on-insulator (SOI) substrate.
20. The method as claimed in claim 19, further comprising choosing a thickness of a Si overlayer of the SOI substrate for controlling a stress in the released portion of the micromechanical element.
21. The method as claimed in claim 19 or 20, wherein the recess extends through substantially the thickness of the Si overlayer of the SOI substrate.
22. The method as claimed in any one of claims 20 to 21, wherein the thickness is in a range of about 10 nm to about 10 \u03bcm.
23. The method as claimed in any one of claims 19 to 22, wherein the Si based substrate is provided using wafer bonding, Separation by Implantation of Oxygen (SIMOX) or both.
24. The method as claimed in any one of claims 19 to 23, further comprising choosing a crystalline orientation of the SOI substrate for controlling the stress in the released portion of the micromechanical element.
25. The method as claimed in claim 24, wherein the crystalline orientation is (100) or (111).
26. The method as claimed in claim 18, wherein the Si based substrate comprises a bulk Si substrate.
27. The method as claimed in claim 26, wherein the bulk Si substrate comprises a crystalline orientation of (100) or (111).
28. The method as claimed in any one of claims 18 to 27, wherein the micromechanical element comprises one or more materials selected from a group consisting ZnO, Zn(Mg)O, Zn(Cd)O, ZnS, GaN, AlN, AlGaN, InGaN, InN polycrystalline diamond and nanocrystalline diamond.
29. The method as claimed in any one of claims 18 to 28, wherein the forming an undercut in the form of a recess comprises using a dry etch process.
30. The method as claimed in claim 29, wherein the dry etch process comprises using XeF2.
31. The method as claimed in any one of claims 18 to 30, wherein the micromechanical element comprises an optoelectronic device.
32. The method as claimed in any one of claims 18 to 31, wherein the micromechanical element comprises a microelectronic device.
33. The method as claimed in claim 31, wherein the optoelectronic device comprises a light emitting diode (LED).
34. The method as claimed in claim 32, wherein the microelectronic device comprises one or more Field-effect transistors (FETs).