Author: claimsbot

1. A NAND-type semiconductor storage device comprising:
a semiconductor substrate;
a semiconductor layer formed on the semiconductor substrate;
a buried insulating film selectively formed between the semiconductor substrate and the semiconductor layer in a memory transistor formation region;
diffusion layers formed on the semiconductor layer in the memory transistor formation region;
floating body regions between the diffusion layers;
a first insulating film formed on each of the floating body regions;
a floating gate electrode formed on the first insulating film;
a control electrode on a second insulating film formed on the floating gate electrode; and
contact plugs connected to ones of the pairs of diffusion layers which are respectively located at ends of the memory transistor formation region,
wherein the ones of the pairs of diffusion layers, which are located at the ends of the memory transistor formation region, are connected to the semiconductor substrate below the contact plugs.
2. The NAND-type semiconductor storage device according to claim 1, wherein ones of the floating gate electrodes and ones of the control electrodes which are located at the ends of the memory transistor formation region are respectively short-circuited.
3. The NAND-type semiconductor storage device according to claim 1, wherein ones of the floating body regions which are respectively formed at the ends of the memory transistor formation region are connected to the semiconductor substrate.
4. The NAND-type semiconductor storage device according to claim 1, wherein the buried insulating film is formed below the floating body regions, and the pairs of diffusion layers are connected to the semiconductor substrate.
5. The NAND-type semiconductor storage device according to claim 1, further comprising:
a second diffusion layer selectively formed on a surface of the semiconductor substrate below the contact plugs.
6. The NAND-type semiconductor storage device according to claim 1, wherein each of the floating body regions has a conductivity type different from a conductivity type of the semiconductor substrate.
7. The NAND-type semiconductor storage device according to claim 1, wherein one of the contact plugs located at the ends of the memory transistor formation region is connected to a bit line, and the other of the contact plugs is connected to a source line.
8. The NAND-type semiconductor storage device according to claim 1, wherein each of the control electrodes forms a part of a word line.
9. The NAND-type semiconductor storage device according to claim 1, further comprising:
a silicide formed on each of the control electrodes.
10. The NAND-type semiconductor storage device according to claim 1, further comprising:
an element isolation insulating film which is formed near a surface portion of the semiconductor substrate to be orthogonal to the control electrodes.
11. The NAND-type semiconductor storage device according to claim 7, further comprising:
an interlayer insulating film formed between the bit line and the semiconductor layer.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A dental CADCAM system, said system comprising:
a three dimensional measuring camera for measuring a three-dimensional shape of a basic dental structure;
a measuring camera with an optical sensor for measuring relevant optical properties of said basic dental structure and relevant optical properties of a desired appearance;
a dental restoration body construction unit having instructions effective to generate a dataset, said dataset further comprising
a desired shape of a dental restoration body to be constructed in association with the measured three dimensional shape of the basic dental structure and
a thickness of said dental restoration body for at least one area that is representative of an appearance of said dental restoration body applied on said basic dental structure;

a first data storage area storing reference data of relevant optical properties of different translucent dental materials;
a second data storage area storing data concerning a dependency between relevant optical properties of said basic dental structure, values of said relevant optical properties of the desired appearance, said thickness of said restoration body and relevant optical properties of said translucent dental materials,
an interface for receiving target values of said desired appearance of said restoration body, said optical properties of said basic dental structure and said thickness of said restoration body; and
a calculation unit effective to determine an appropriate translucent dental material for use in said dental restoration body based upon said reference data and said dependency.
2. An apparatus as defined in claim 1, wherein said optical sensor is an image detecting sensor.
3. An apparatus as defined in claim 1, wherein said measuring camera for measuring the relevant optical properties is the three dimensional measuring camera.
4. A method for producing a dental restoration body for application to a basic dental structure, said restoration body being made of a translucent dental material, wherein said method is a part of a CADCAM-process and said method comprises the steps of:
providing a dataset concerning said dental restoration body for application to the basic dental structure using computer aided designs methods;
providing reference data concerning relevant optical properties of different translucent dental materials and a dependency between relevant optical properties of said basic dental structure and said translucent dental materials, target values for desired optical properties of said dental restoration body to be produced, thickness of said restoration body and said relevant optical properties of said translucent dental material;
determining said relevant optical properties of said basic dental structure;
determining a target value corresponding to said desired optical properties of said restoration body when applied to said basic dental structure to be produced;
determining a thickness of said dental restoration body to be produced on at least one area of said basic dental structure which is relevant for the appearance of said dental restoration body; and
selecting a dental material for said dental restoration body based upon said reference data and said dependency between said optical properties of said basic dental structure and said translucent dental materials.
5. The method of claim 4 wherein said relevant optical properties of said different translucent dental materials comprise different color values or different translucency values.
6. The method of claim 5 wherein a color value for said target value is selected based upon optical properties of adjacent teeth of said basic dental structure.
7. The method of claim 5 wherein said translucency value is selected based upon optical properties of adjacent teeth of said basic dental structure.
8. The method of claim 4 wherein said basic dental structure is a prepared tooth.
9. The method of claim 4 wherein said dental restoration body is an inlay, an onlay, a crown or a veneer.
10. The method of claim 4 wherein said dependency is a functional dependency or an empirical known dependency.
11. A computer program for determining an appropriate translucent dental material or construction for use in producing a dental restoration for use with an existing dental structure, said computer program comprising:
a data base containing optical properties of different translucent dental materials or constructions and a dependency between optical properties of said dental restoration, said existing dental structure and said translucent dental materials or constructions;
an input routine effective to receive information, said information comprising a desired optical property and thickness of said dental restoration to be produced, said thickness representative of an area relevant to an appearance of the dental structure in use with the existing dental structure; and
a selection routine effective to determine an appropriate dental material or construction for use in producing said dental restoration based upon a relationship between said desired optical property and thickness of said dental restoration, said optical properties of said existing dental structure and said translucent dental material or construction.
12. The computer program of claim 11 wherein said computer program is incorporated in a shade determination device.
13. The computer program of claim 11 wherein said computer program is incorporated in a dental CADCAM system.
14. The computer program of claim 11 wherein said relationship is a functional dependency or an empirical known dependency contained in a look-up table.
15. The computer program of claim 11 wherein said existing dental structure is a prepared tooth.
16. The computer program of claim 11 wherein said dental restoration body is an inlay, an onlay, a crown or a veneer.
17. The computer program of claim 11 wherein said desired optical property further comprises a color value.
18. The computer program of claim 11 wherein said desired optical property further comprises a translucency value.
19. The computer program of claim 11 wherein said desired optical property is based upon an optical property of adjacent teeth of said existing dental structure.
20. The computer program of claim 19 wherein said optical property of adjacent teeth of said existing dental structure is obtained from a camera measuring said adjacent teeth with as optical sensor.

1. A photoelectric conversion device comprising a photoelectric conversion part including a pair of electrodes and a photoelectric conversion layer provided between the pair of electrodes, wherein
the photoelectric conversion part further includes a first charge blocking layer for reducing an injection of a charge into the photoelectric conversion layer from one of the pair of electrodes when a voltage is applied between the pair of electrodes, the first charge blocking layer being provided between the one of the pair of electrodes and the photoelectric conversion layer; and
the first charge blocking layer has a relative dielectric constant larger than a relative dielectric constant of the photoelectric conversion layer.
2. The photoelectric conversion device according to claim 1, wherein
the photoelectric conversion part further includes a second charge blocking layer for reducing an injection of a charge into the photoelectric conversion layer from other of the pair of electrodes when a voltage is applied between the pair of electrodes, the second charge blocking layer being provided between the other of the pair of electrodes and the photoelectric conversion layer; and
the second charge blocking layer has a relative dielectric constant larger than a relative dielectric constant of the photoelectric conversion layer.
3. The photoelectric conversion device according to claim 1, wherein a value obtained by dividing a thickness of the photoelectric conversion layer by the relative dielectric constant of the photoelectric conversion layer is larger than a value obtained by dividing a thickness of the first charge blocking layer by the relative dielectric constant of the first charge blocking layer.
4. The photoelectric conversion device according to claim 2, wherein a value obtained by dividing a thickness of the photoelectric conversion layer by the relative dielectric constant of the photoelectric conversion layer is larger than a sum of a value obtained by dividing a thickness of the first charge blocking layer by the relative dielectric constant of the first charge blocking layer and a value obtained by dividing a thickness of the second charge blocking layer by the relative dielectric constant of the second charge blocking layer.
5. The photoelectric conversion device according to claim 1, wherein the first charge blocking layer has a thickness of from 10 to 200 nm.
6. The photoelectric conversion device according to claim 1, wherein the first charge blocking layer has a relative dielectric constant of 5 or more.
7. The photoelectric conversion device according to claim 1, wherein the first charge blocking layer is transparent.
8. The photoelectric conversion device according to claim 1, wherein a value obtained by dividing a voltage externally applied between the pair of electrodes by a sum of a thickness of the first charge blocking layer and a thickness of the photoelectric conversion layer is from 1.0\xd7105 Vcm to 1.0\xd7107 Vcm.
9. The photoelectric conversion device according to claim 1, wherein the first charge blocking layer comprises an inorganic material.
10. The photoelectric conversion device according to claim 2, wherein the first charge blocking layer has a thickness of from 10 to 200 nm, and the second charge blocking layer has a thickness of from 10 to 200 nm.
11. The photoelectric conversion device according to claim 2, wherein the first charge blocking layer has a relative dielectric constant of 5 or more, and the second charge blocking layer has a relative dielectric constant of 5 or more.
12. The photoelectric conversion device according to claim 2, wherein each of the first charge blocking layer and the second charge blocking layer is transparent.
13. The photoelectric conversion device according to claim 2, wherein a value obtained by dividing a voltage externally applied between the pair of electrodes by a sum of a thickness of the first charge blocking layer, a thickness of the second charge blocking layer and a thickness of the photoelectric conversion layer is from 1.0\xd7105 Vcm to 1.0\xd7107 Vcm.
14. The photoelectric conversion device according to claim 2, wherein the first charge blocking layer comprises an inorganic material, and the second charge blocking layer comprises an inorganic material.
15. The photoelectric conversion device according to claim 9, wherein the inorganic material is an inorganic oxide.
16. The photoelectric conversion device according to claim 1, wherein the photoelectric conversion layer has a relative dielectric constant of 3 or more.
17. The photoelectric conversion device according to claim 1, wherein the photoelectric conversion layer comprises an organic material.
18. The photoelectric conversion device according to claim 1, wherein at least one of the pair of electrodes is a transparent electrode.
19. The photoelectric conversion device according to claim 18, wherein both of the pair of electrodes are a transparent electrode.
20. The photoelectric conversion device according to claim 1, wherein, of the pair of electrodes, the electrode in a light incident side is an electrode for collecting electrons generated in the photoelectric conversion layer.
21. The photoelectric conversion device according to claim 1, which comprises:
a semiconductor substrate having at least one of the photoelectric conversion part stacked on an upper side thereof;
a charge storage part provided in the semiconductor substrate, for storing a charge generated in the photoelectric conversion layer in the photoelectric conversion part; and
a connecting part for electrically connecting an electrode for collecting the charge, which is one of the pair of electrodes in the photoelectric conversion part, to the charge storage part.
22. The photoelectric conversion device according to claim 21, further comprising an in-substrate photoelectric conversion part provided in the semiconductor substrate, for absorbing light which has transmitted through the photoelectric conversion layer in the photoelectric conversion part, generating a charge corresponding to the light and storing the charge.
23. The photoelectric conversion device according to claim 22, wherein the in-substrate photoelectric conversion part comprises plural photodiodes for absorbing light of a different color, respectively, the plural photodiodes being stacked in the semiconductor substrate.
24. The photoelectric conversion device according to claim 22, wherein the in-substrate photoelectric conversion part comprises plural photodiodes provided in the semiconductor substrate for absorbing light of a different color, respectively, the plural photodiodes being arranged in a direction vertical to a direction of the incident light.
25. The photoelectric conversion device according to claim 21, wherein
one of the photoelectric conversion part is stacked on an upper side of the semiconductor substrate;
the plural photodiodes are a photodiode having a p-n junction provided in a position suitable for absorbing blue light and a photodiode having a p-n junction provided in a position suitable for absorbing red light; and
the photoelectric conversion layer in the photoelectric conversion part absorbs green light.
26. The photoelectric conversion device according to claim 21, wherein
the charge stored in the charge storing part is electrons; and
of the pair of electrodes in the photoelectric conversion part, the electrode in the light incident side is an electrode for collecting electrons.
27. A solid-state imaging device including a number of the photoelectric conversion device according to claim 21, provided in an array state, wherein a signal read-out part for reading out a signal corresponding to the charge stored in the charge storing part of each of the photoelectric conversion devices is provided.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A gas cooled dynamoelectric machine, comprising:
a rotor having a body portion, said rotor having axially extending coils and endwindings extending axially beyond at least one end of said body portion;
a plurality of spaceblocks disposed between said endwindings;
a plurality of cavities being defined between mutually adjacent endwindings and spaceblocks;
at least one said spaceblock having a radially-extending duct defined therein, said duct extending between an inlet opening and an outlet opening; and
wherein said outlet opening is disposed in a surface of said at least one spaceblock facing a cavity adjacent thereto, said outlet opening being defined in a mid-section of said spaceblock so as to emit said cooling gas flow generally in a direction of a central region of said cavity.
2. The dynamoelectric machine of claim 1, wherein said inlet opening is located adjacent a radially inward end of said at least one spaceblock.
3. The dynamoelectric machine of claim 1, wherein said outlet opening is formed on a circumferentially oriented surface of said at least one spaceblock.
4. The dynamoelectric machine of claim 1, wherein said inlet opening is formed on a circumferentially oriented surface of said at least one spaceblock.
5. The dynamoelectric machine of claim 1, wherein a plurality of said spaceblocks have a radially-extending duct formed therein.
6. The dynamoelectric machine of claim 1, wherein there are a plurality of outlet openings, at least one said outlet opening emitting said cooling gas flow generally in a direction of a central region of said cavity.
7. The dynamoelectric machine of claim 6, wherein said outlet openings are defined in a common surface of said at least one spaceblock.
8. The dynamoelectric machine of claim 6, wherein said outlet openings are defined in at least first and second surfaces of said at least one spaceblock.
9. The dynamoelectric machine of claim 8, wherein a partition member is disposed in said duct for defining first and second passage portions.
10. A gas cooled dynamoelectric machine, comprising:
a rotor having a spindle and a body portion;
a rotor winding comprising axially extending coils disposed on said body portion and spaced, concentric endwindings extending axially beyond at least one end of said body portion, said endwindings and said spindle defining a space therebetween;
a plurality of spaceblocks located between adjacent ones of said endwindings, at least one of said spaceblocks having an internal duct, including an inlet opening and an outlet opening, extending from said space between said endwindings and said spindle to a cavity located between respective endwindings; and
said duct outlet opening being disposed in said spaceblock so as to emit said cooling gas flow in a direction of a central region of said cavity.
11. The dynamoelectric machine of claim 10, wherein a plurality of said spaceblocks have an internal duct formed therein.
12. The dynamoelectric machine of claim 10, wherein there are a plurality of outlet openings, at least one said outlet opening emitting said cooling gas flow generally in a direction of a central region of said cavity.
13. The dynamoelectric machine of claim 12, wherein said outlet openings are defined in a common surface of said at least one spaceblock.
14. The dynamoelectric machine of claim 12, wherein said outlet openings are defined in at least first and second surfaces of said at least one spaceblock.
15. The dynamoelectric machine of claim 12, further comprising a retaining ring disposed around said endwindings, and wherein said internal duct extends from a point radially inward of said endwindings to a point near said retaining ring.
16. The dynamoelectric machine of claim 12, wherein at least one said outlet opening is directed at an angle of less than 90 degrees with respect to an axis of said rotor so as to impinge cooling gas on an endwinding adjacent thereto.
17. A method of cooling endwindings in a dynamoelectric machine comprising a rotor having a body portion, axially extending coils and endwindings extending axially beyond at least one end of said body portion; a plurality of spaceblocks disposed between said endwindings; and a plurality of cavities being defined between mutually adjacent endwindings and spaceblocks; the method comprising:
providing at least one said spaceblock having a radially-extending duct defined therein, said duct extending between an inlet opening and an outlet opening, said outlet opening being disposed in a surface of said at least one spaceblock facing a cavity adjacent thereto, said outlet opening being defined in a mid-section of said spaceblock; and
rotating said rotor so that a pressure head drives a cooling gas through said inlet opening into said radially-extending duct and through said outlet opening into a respective cavity, so as to emit said cooling gas flow generally in a direction of a central region of said cavity.
18. A method as in claim 17, wherein there are a plurality of outlet openings whereby cooling gas is directed into cavities on each side of said at least one spaceblock.
19. A method as in claim 17, wherein there are a plurality of outlet openings whereby cooling gas is directed in radially outer, radially inner, and central regions of said cavity.
20. A method as in claim 17, wherein there are a plurality of outlet openings, at least one said outlet opening being directed at an angle of less than 90 degrees with respect to an axis of said rotor so as to impinge cooling gas on an endwinding adjacent thereto.