Author: claimsbot

1. A method of manufacturing a light emitting element comprising, sequentially:
(a) forming a mask layer for selective growth formed from a material different from a material that configures a first compound semiconductor layer on a region outside an element forming region on a substrate for manufacturing a light emitting element;
(b) forming a layered structure body by layering a first compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, wherein the first surface contacts the substrate between portions of the mask layer, an active layer formed from a GaN-based compound semiconductor, which contacts the second surface of the first compound semiconductor layer, and a second compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, and in which the first surface contacts the active layer on the element forming region;
(c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film;
(d) fixing the second light reflecting layer to a support substrate;
(e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the mask layer; and
(f) forming a first light reflecting layer formed from a multilayer film and a first electrode on the first surface of the first compound semiconductor layer.
2. The method of manufacturing a light emitting element according to claim 1,
wherein exposure of the first surface of the first compound semiconductor layer and the mask layer in (e) is performed based on a chemicalmechanical polishing method.
3. The method of manufacturing a light emitting element according to claim 1,
wherein a step portion is formed on the first compound semiconductor layer by etching a part of the first surface of the first compound semiconductor layer before the first electrode is formed on the first surface of the first compound semiconductor layer in (f), and
the first light reflecting layer is formed on at least an inside of the step portion, and the first electrode is formed on at least the outside of the step portion in (f).
4. The method of manufacturing a light emitting element according to claim 3,
wherein the first light reflecting layer is formed on a convexity of the first surface of the first compound semiconductor layer, and
the first electrode is formed on a concavity of the first surface of the first compound semiconductor layer.
5. The method of manufacturing a light emitting element according to claim 3,
wherein a value of the surface roughness Ra of the first surface of the first compound semiconductor layer on an inside of the step portion is 3\xd710\u22129 m or less, and
the value of the surface roughness Ra of the first surface of the first compound semiconductor layer on the outside of the step portion exceeds the value of the surface roughness Ra of the first surface of the first compound semiconductor layer on the inside of the step portion.
6. The method of manufacturing a light emitting element according to claim 3,
wherein R2R1\u22661 is satisfied, where the contact resistance value of the first surface of the first compound semiconductor layer inside the step portion is R1, and the contact resistance value of the first surface of the first compound semiconductor layer outside the step portion is R2.
7. A method of manufacturing a light emitting element comprising, sequentially:
(a) forming a mask layer for selective growth formed from a material different from a material that configures a first compound semiconductor layer on a region outside an element forming region on a substrate for manufacturing a light emitting element, and forming a first light reflecting layer formed from a multilayer film, which has a convex shape on the element forming region;
(b) forming a layered structure body by layering a first compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, wherein the first surface contacts the substrate between portions of the mask layer and the first light reflecting layer, an active layer formed from a GaN-based compound semiconductor, which contacts the second surface of the first compound semiconductor layer, and a second compound semiconductor layer formed from a GaN-based compound semiconductor, which has a first surface and a second surface opposing the first surface, and in which the first surface contacts the active layer on the substrate for manufacturing a light emitting element including the first light reflecting layer;
(c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film;
(d) fixing the second light reflecting layer to a support substrate;
(e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer, the mask layer, and the first light reflecting layer; and
(f) forming a first electrode on at least the first surface of the first compound semiconductor layer.
8. The method of manufacturing a light emitting element according to claim 7,
wherein exposure of the first surface of the first compound semiconductor layer, the mask layer and the first light reflecting layer in (e) is performed based on a chemicalmechanical polishing method.
9. The method of manufacturing a light emitting element according to claim 7,
wherein a part of the first surface of the first compound semiconductor layer on which the first electrode is to be formed is etched, before the first electrode is formed on the first surface of the first compound semiconductor layer in (f).
10. The method of manufacturing a light emitting element according to claim 7,
wherein an area centroid of the second light reflecting layer is not present on a normal line with respect to the first light reflecting layer that passes through the area centroid of the first light reflecting layer.
11. The method of manufacturing a light emitting element according to claim 7,
wherein an area centroid of the active layer is not present on a normal line with respect to the first light reflecting layer that passes through the area centroid of the first light reflecting layer.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for automatically identifying tooth crowns in a virtual three-dimensional model of teeth in a dental arch, comprising the steps of:
a) storing said model in a memory accessible to a general-purpose computer, said computer including a processing unit;
b) providing machine readable instructions for execution by said processing unit, said instructions comprising instructions operating on said model in the following respects:
1) orientating said model with reference to a plane;
2) automatically determining local maxima of the model and areas bounded by said local maxima;
3) automatically determining saddle points between said local maxima in the model, said saddle points corresponding to boundaries between teeth;
4) determining the position of said saddle points along a dental archform, and
5) for each tooth, automatically identifying a path linking said saddle points comprising a transition between teeth and gingival tissue and between adjacent teeth in said model, and identifying areas bounded by said path and in the direction of said plane as corresponding to one of said tooth crowns.
2. The method of claim 1, wherein instructions 1) comprises instructions defining an occlusal plane or approximation thereof for the model and an approximate center of the model, and performing a transformation of said model to thereby orient said model with reference to said occlusal plane or approximation thereof and to said center.
3. The method of claim 1, wherein, in instructions 4), said archform comprises a parabolic archform of the form y=ax2+b, and wherein the method further comprises the step of performing a parabolic coordinate transform to thereby determine parabolic x coordinates for said saddle points.
4. The method of claim 1, wherein said instructions 5) comprises instructions:
1) performing a directional ravine detection process testing for paths between saddle points with a concave curvature between two saddle points; and
2) delimiting an area bounded by said paths if said ravine detection process is successful.
5. The method of claim 1, wherein instructions 2), 3), 4) and 5) operate on a representation of said model comprising a continuous single surface formed of interconnected triangles defined by vertices.
6. A method for automatically identifying gingival tissue in a virtual three-dimensional model of anatomical structures of the teeth and associated gingival tissue in a dental arch, comprising the steps of:
a) storing said model in a memory accessible to a general-purpose computer, said computer including a processing unit;
b) providing machine readable instructions for execution by said processing unit, said instructions comprising instructions operating on said model in the following respects:
1) orientating said model with reference to a plane;
2) automatically determining local maxima of the model and areas bounded by said local maxima;
3) automatically determining saddle points between said local maxima in the model, said saddle points corresponding to boundaries between teeth;
4) determining the position of said saddle points along a dental archform, and
5) for each tooth, automatically identifying a path defining comprising a transition between teeth and gingival tissue and between adjacent teeth in said model and linking said saddle points, and identifying areas bounded by said path and in the direction away from said plane as corresponding to said gingival tissue.
7. The method of claim 6, wherein instructions 1) comprises instructions defining an occlusal plane or approximation thereof for the model and an approximate center of the model, and performing a transformation of said model to thereby orient said model with reference to said occlusal plane or approximation thereof and to said center.
8. The method of claim 6, wherein, in instructions 4), said archform comprises a parabolic archform of the form y=ax2+b, and wherein the method further comprises the step of performing a parabolic coordinate transform to thereby determine parabolic x coordinates for said saddle points.
9. The method of claim 6, wherein instructions 5) comprises instructions:
1) performing a directional ravine detection process testing for paths between saddle points with a concave curvature between two saddle points; and
2) delimiting an area bounded by said paths if said ravine detection process is successful.
10. The method of claim 6, wherein instructions 2), 3), 4) and 5) operate on a representation of said model comprising a continuous single surface formed of interconnected triangles defined by vertices.
11. In a system comprising a programmed computer containing instructions for separating virtual teeth from a virtual model of both teeth and gingival tissue, the improvement comprising:
providing instructions for execution by said programmed computer that
1) automatically determine local maxima of the model and areas bounded by said local maxima;
2) automatically determine saddle points between said local maxima in the model, said saddle points corresponding to boundaries between teeth;
3) automatically determine the position of said saddle points along a dental archform, and
4) for each tooth, automatically identifying a path interconnecting said saddle points for said tooth, said line or lines comprising a transition between teeth and gingival tissue and between adjacent teeth in said model.
12. The improvement of claim 11, wherein said instructions 4) comprise instructions:
a) performing a directional ravine detection process testing for paths between saddle points with a concave curvature between two saddle points; and
b) delimiting an area bounded by said paths if said ravine detection process is successful.
13. In a system comprising a programmed computer containing instructions for separating virtual teeth from a virtual model of both teeth and gingival tissue, the improvement comprising:
providing instructions for execution by said programmed computer that identifies a path interconnecting saddle points between teeth, said path comprising a transition between teeth and gingival tissue and between adjacent teeth in said model, wherein said path is identified by performing a tree search tracing paths along a surface of said virtual model between said saddle points and selecting a path from said paths in said tree search based on a quality values assigned to said paths.
14. The improvement of claim 13, wherein said tree search is performed by reference to local curvature of said virtual model and a vector field for said model defining a direction of search for said path.

1. An apparatus comprising:
a plurality of antennas;
a plurality of gain blocks each associated with a corresponding one of the plurality of antennas, each gain block having an input and an output;
a plurality of switch networks each associated with a corresponding one of the plurality of gain blocks, wherein each switch network is configured to operate in either of first and second switch modes, wherein in the first switch mode each switch network is configured to couple a transmit signal to the input of its associated gain block and to couple an amplified transmit signal from the output of its associated gain block to the antenna for the associated gain block, and in the second switch mode each switch network is configured to couple a receive signal from the antenna for its associated gain block to the input of the associated gain block that produces an amplified receive signal for output; and
a controller configured to control the plurality of gain blocks and the plurality of switch networks, wherein in a transmit mode the controller is configured to control each of the plurality of switch networks to operate in the first switch mode so as to cause the plurality of gain blocks to amplify a plurality of transmit signals for transmission substantially simultaneously via the plurality of antennas and in a receive mode the controller is configured to control each of the plurality of switch networks to operate in the second switch mode so as to cause the plurality of gain blocks to amplify a plurality of receive signals received by the plurality of antennas.
2. The apparatus of claim 1, wherein each gain block is configured to operate in either of first and second gain modes, wherein in the first gain mode each gain block is configured to amplify with a first gain and in the second gain mode is configured to amplify with a second gain, and wherein the controller is configured to control each gain block to operate in the first gain mode when in the transmit mode and to operate in the second gain mode when in the receive mode.
3. The apparatus of claim 2, wherein each of the plurality of gain blocks comprises an amplifier that is configured to perform transmit power amplification in the first gain mode at the first gain and to perform receive amplification in the second gain mode at the second gain.
4. The apparatus of claim 2, wherein each of the plurality of gain blocks is configured to generate the first gain in the first gain mode which is less than the second gain generated in the second gain mode.
5. The apparatus of claim 2, wherein each of the plurality of gain blocks comprises at least one amplifier, an attenuator element and a switch configured to connect the attenuator element into a signal path of the gain block during the first gain mode and to disconnect the attenuator element from the signal path during the second gain mode.
6. The apparatus of claim 1, and further comprising a radio frequency (RF) modulator and an RF demodulator associated with each antenna, wherein the controller is configured to store calibration values to compensate for phase and gain offsets of the RF modulators and RF demodulators for a corresponding antenna and to apply gain and phase adjustments to respective transmit and receive signals in accordance with the calibration values.
7. The apparatus of claim 1, and further comprising a radio frequency (RF) modulator and an RF demodulator associated with each antenna, wherein the RF modulator is configured to upconvert a baseband transmit signal to a transmission frequency to produce the transmit signal and the RF demodulator is configured to downconvert the receive signal detected by its associated antenna, wherein each switch network is configured to, in the first switch mode, connect to an output of the RF modulator to couple the transmit signal to the gain block for its associated antenna, and in the second switch mode, to connect the amplified receive signal from the gain block for its associated antenna to an input of the RF demodulator for its associated antenna.
8. The apparatus of claim 1, wherein each switch network comprises first, second and third switches each comprising first, second and third terminals, the first terminal of the first switch being coupled to the associated antenna for the gain block, the first terminal of the second switch being coupled to an input to the gain block, the first terminal of the third switch being coupled to an output of the gain block, the second terminal of the first switch being coupled to the second terminal of the second switch and the third terminal of the first switch being coupled to the second terminal of the third switch, the third terminal of the second switch being coupled to receive the transmit signal and the third terminal of the third switch being coupled to output the amplified receive signal.
9. A method comprising:
providing a plurality of antennas;
in a transmit mode, amplifying with each of a plurality of gain blocks corresponding ones of a plurality of transmit signals to produce amplified transmit signals to be transmitted substantially simultaneously by respective ones of the plurality of antennas; and
in a receive mode, amplifying with each of the plurality of gain blocks corresponding ones of a plurality of receive signals detected by respective ones of the plurality of antennas.
10. The method of claim 9, and further comprising controlling each of the plurality of gain blocks to operate according to a first gain level in the transmit mode and to operate according to a second gain level in the receive mode.
11. The method of claim 10, wherein the second gain level is greater than the first gain level.
12. The method of claim 9, and further comprising, in the transmit mode, coupling the plurality of transmit signals from outputs of corresponding ones of a plurality of radio frequency (RF) modulators to inputs of respective ones of the plurality of gain blocks and coupling amplified transmit signals output from the plurality of gain blocks to respective ones of the plurality of antennas, and in the receive mode, coupling the plurality of receive signals to inputs of respective ones of the plurality of gain blocks and coupling amplified receive signals output from the plurality of gain blocks to inputs of respective ones of a plurality of RF demodulators.
13. The method of claim 9, and further comprising, in the transmit mode, coupling an attenuator element in a signal path of each gain block so as to produce the first gain and in the receive mode, removing the attenuator element in the signal path of each gain block so as to produce the second gain.
14. The method of claim 9, and further comprising storing calibration values to compensate for phase and gain offsets of a radio frequency (RF) modulator and an RF demodulator associated with each antenna, and applying gain and phase adjustments to respective transmit signals in accordance with the calibration values in the transmit mode and to respective receive signals in accordance with the calibration values in the receive mode.
15. An apparatus comprising:
a plurality of antennas;
a front-end module associated with a corresponding one of the plurality of antennas, each front-end module comprising:
a radio frequency (RF) modulator configured to modulate a baseband transmit signal to produce an RF transmit signal for transmission via an associated antenna;
an RF demodulator configured to demodulate an RF receive signal from the associated antenna to produce a baseband receive signal;
a gain circuit configured to amplify the RF transmit signal or the RF receive signal, wherein the gain circuit is configured to operate in either of first and second gain modes, wherein in the first gain mode the gain circuit is configured to amplify the RF transmit signal with a first gain to produce an amplified RF transmit signal to be transmitted from the associated antenna and in the second gain mode is configured to amplify with a second gain the RF receive signal to produce an amplified RF receive signal;
a switch network configured to be coupled to an input of the gain circuit and to an output of the gain circuit, wherein the switch network is configured to operate in either a first switch mode or a second switch mode, wherein in the first mode, the switch network is configured to couple the RF transmit signal from the RF modulator to an input of the gain circuit and to couple the amplified RF transmit signal from the output of the gain circuit to the antenna for the associated front-end module, and in the second mode, the switch network is configured to couple the RF receive signal from the antenna for the front-end module to the input of the gain circuit and to couple the amplified RF receive signal from the output of the gain circuit to an input of the RF demodulator; and

a controller configured to control the gain circuit and the switch network in each of the plurality of front-end modules, wherein in a transmit mode the controller is configured to control each of the gain circuits in the front-end modules to operate in the first gain mode and to control each of the switch networks in the front-end modules to operate in the first switch mode so as to transmit a plurality of amplified RF transmit signals substantially simultaneously from the plurality of antennas, and in a receive mode the controller is configured to control each of the gain circuits in the front-end modules to operate in the second gain mode and to control each of the plurality of switch networks in the front-end modules to operate in the second switch mode so as to amplify a plurality of RF receive signals received by the plurality of antennas.
16. The apparatus of claim 15, wherein each gain circuit is configured to generate the first gain in the first gain mode that is less than the second gain generated in the second gain mode.
17. The apparatus of claim 16, wherein each gain circuit comprises an amplifier that is configured to perform transmit power amplification in the first gain mode at the first gain and to perform receive amplification in the second gain mode at the second gain.
18. The apparatus of claim 15, wherein the each gain circuit comprises first and second amplifiers, an attenuator element and a switch configured to connect the attenuator element into and out of a signal path of the first and second amplifiers depending on whether the gain circuit is in the first gain mode or second gain mode.
19. The apparatus of claim 15, wherein the controller is configured to store calibration values to compensate for phase and gain offsets of the RF modulator and RF demodulator within each front-end module, and to apply gain and phase adjustments to respective baseband transmit signals and baseband receive signals based on the calibration values.
20. The apparatus of claim 15, wherein each switch network comprises first, second and third switches each comprising first, second and third terminals, the first terminal of the first switch being coupled to the associated antenna for the front-end module, the first terminal of the second switch being coupled to the input to the gain circuit, the first terminal of the third switch being coupled to the output of the gain circuit, the second terminal of the first switch being coupled to the second terminal of the second switch and the third terminal of the first switch being coupled to the second terminal of the third switch, the third terminal of the second switch being coupled to an output of the RF modulator and the third terminal of the third switch being coupled to an input of the RF demodulator.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A steel part for machine structural use made of a steel containing,
in mass %,
C: 0.05 to 0.20%,
Si: 0.10 to 1.00%,
Mn: 0.75 to 3.00%,
P: 0.001 to 0.050%,
S: 0.001 to 0.200%,
V: 0.05 to 0.20%,
Cr: 0.01 to 1.00%,
Al: 0.001 to 0.500%, and
N: 0.0080 to 0.0200%, and
a balance being composed of Fe and inevitable impurities, wherein a steel structure contains a bainite structure having an area ratio of 95% or more,
a bainite lath width is 5 \u03bcm or less,
V carbide having an average grain diameter of not less than 4 nm nor more than 7 nm dispersedly exists in the bainite structure, and
an area ratio of v carbide in the bainite structure is 0.18% or more:
2. The steel part for machine structural use according to claim 1, wherein
the steel further contains one type or two types or more of, in mass %,
Ca: 0.0003 to 0.0100%,
Mg: 0.0003 to 0.0100%, and
Zr: 0.0005 to 0.1000%.
3. The steel part for machine structural use according to claim 1 or 2, wherein
the steel further contains one type or two types of, in mass %,
Mo: 0.01 to 1.00%, and
Nb: 0.001 to 0.200%.
4. The steel part for machine structural use according to claim 1, wherein
Charpy absorbed energy at 20\xb0 C. is 80 Jcm2 or more and an endurance ratio is 0.60 or more.
5. A manufacturing method of a steel part for machine structural use, comprising:
heating a steel product containing, in mass %,
C: 0.05 to 0.20%,
Si: 0.10 to 1.00%,
Mn: 0.75 to 3.00%,
P: 0.001 to 0.050%,
S: 0.001 to 0.200%,
V: 0.05 to 0.20%,
Cr: 0.01 to 1.00%,
Al: 0.001 to 0.500%, and
N: 0.0080 to 0.0200%, and
a balance being composed of Fe and inevitable impurities to not lower than 1100\xb0 C. nor higher than 1300\xb0 C. and hot forging the steel product;
after said hot forging, cooling the hot-forged steel product at an average cooling rate down to 300\xb0 C. set to be not less than 3\xb0 C.second nor more than 120\xb0 C.second; and
after said cooling, performing an aging treatment within a temperature range of not lower than 550\xb0 C. nor higher than 700\xb0 C.