Author: claimsbot

1.-6. (canceled)
7. An internal combustion engine control device comprising:
a variable compression ratio mechanism configured to change a compression ratio of an internal combustion engine;
a predicted intake air volume calculation means for calculating, based on an engine load of the internal combustion engine, a predicted intake air volume after a prescribed time has expired from a current point of time;
a target compression ratio calculation means for calculating, based on the predicted intake air volume calculated by the predicted intake air volume calculation means, a target compression ratio after expiration of the prescribed time from the current point of time; and
a control command calculation means for calculating a control command to the variable compression ratio mechanism so as to bring an actual compression ratio into accordance with the target compression ratio.
8. The internal combustion engine control device as recited in claim 7, wherein:
the engine load is calculated based on an accelerator opening.
9. The internal combustion engine control device as recited in claim 7, wherein:
the prescribed time is a time longer than a response delay time of the variable compression ratio mechanism.
10. The internal combustion engine control device as recited in claim 7, wherein:
the predicted intake air volume is calculated based on at least one of a current accelerator opening and a current intake negative pressure.
11. The internal combustion engine control device as recited in claim 7, wherein:
the target compression ratio is set to a compression ratio such that abnormal combustion can be prevented from occurring for the predicted intake air volume.
12. A control method of an internal combustion engine equipped with a variable compression ratio mechanism configured to change a compression ratio of the internal combustion engine, comprising:
calculating, based on an engine load of the internal combustion engine, a predicted intake air volume after a prescribed time has expired from a current point of time;
calculating, based on the predicted intake air volume, a target compression ratio after expiration of the prescribed time from the current point of time;
calculating a control command to the variable compression ratio mechanism so as to bring an actual compression ratio into accordance with the target compression ratio; and
controlling the variable compression ratio mechanism based on the control command.
13. The internal combustion engine control device as recited in claim 7, further comprising:
an electric motor that drives the variable compression ratio mechanism,
wherein the prescribed time is corrected depending on a condition of the electric motor.
14. The internal combustion engine control device as recited in claim 13, wherein:
the prescribed time is corrected depending on a temperature condition of the electric motor.
15. The internal combustion engine control device as recited in claim 13, wherein:
the prescribed time is corrected depending on a condition of a source voltage of the electric motor.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An apparatus for processing a received sequence of data, comprising:
a codeblock segmentation block configured to parse a recovered sequence of data into a plurality of recovered segmented data blocks;
a plurality of Forward Error Correction (FEC) decoders configured to decode the plurality of recovered segmented data blocks in accordance with a FEC encoding scheme to provide a first plurality of decoded codeblocks; and
a plurality of CRC decoders, each of the plurality of Cyclical Redundancy Check (CRC) decoders being coupled to a corresponding one of the plurality of FEC decoders, configured to decode the first plurality of decoded codeblocks in accordance with a CRC encoding scheme to provide a second plurality of decoded codeblocks.
2. The apparatus of claim 1, wherein the codeblock segmentation block is further configured to parse the recovered sequence of data in accordance with a round-robin manner.
3. The apparatus of claim 1, wherein the FEC encoding scheme comprises at least one selected from a group consisting of:
a block encoding scheme; and
a convolutional encoding scheme.
4. The apparatus of claim 1, wherein each of the plurality of CRC decoders decode its corresponding first plurality of decoded codeblock using a least significant bit (LSB) side scheme.
5. The apparatus of claim 4, wherein the LSB side scheme is configured to determine coefficients of a quotient polynomial Q(D) of the CRC encoding scheme for its corresponding first plurality of decoded codeblock through an exclusive disjunction of coefficients of a received polynomial R(D) that represent its corresponding first plurality of decoded codeblock and previous coefficients of the quotient polynomial Q(D).
6. The apparatus of claim 4, wherein each of the first plurality of decoded codeblocks includes one or more information bits and one or more check bits, wherein each of the plurality of CRC decoders is configured to determine that its corresponding first plurality of decoded codeblock includes an error when coefficients of the quotient polynomial Q(D) that correspond to the one or more information bits are non-zero,
7. The apparatus of claim 6, wherein each of the plurality of CRC decoders is configured to determine that its corresponding first plurality of decoded codeblock is error-free when coefficients of the quotient polynomial Q(D) that correspond to the one or more information bits are zero.
8. The apparatus of claim 4, wherein the LSB side scheme is configured to decode its corresponding first plurality of decoded codeblock beginning with a least significant term from among its corresponding first plurality of decoded codeblock to determine whether an error occurred during transmission of the recovered sequence of data.
9. The apparatus of claim 1, wherein at least one of the plurality of CRC decoders comprises:
an exclusive or (XOR) module configured to determine a coefficient of a quotient polynomial Q(D) of the CRC encoding scheme by performing an exclusive disjunction between a bit from among its corresponding first plurality of decoded codeblock and one or more previous coefficient of the quotient polynomial Q(D); and
a plurality of shift registers coupled to the XOR module configured to store the one or more previous coefficient of the quotient polynomial Q(D).
10. A method for processing a received sequence of data that is characterized as having a plurality of data blocks, comprising:
decoding, by a communications receiver, a first data block from among the plurality of data blocks in accordance with a Cyclical Redundancy Check (CRC) encoding scheme to provide a first decoded codeblock; and
decoding, by the communications receiver, a second data block from among the plurality of data blocks in accordance with the CRC encoding scheme with the first data block to provide a second decoded codeblock.
11. The method of claim 10, where the step of decoding the first data block comprises:
decoding the first data block using a CRC polynomial to provide the first decoded codeblock, and
wherein the step of decoding the second data block comprises:
decoding the second data block using the CRC polynomial to provide the second decoded codeblock.
12. The method of claim 10, wherein the step of decoding the first data block is performed in parallel with the step of decoding the second data block.
13. The method of claim 10, where the step of decoding the first data block comprises:
decoding the first data block using a least significant bit (LSB) side scheme, the LSB side scheme including determining coefficients of a quotient polynomial Q(D) of the CRC encoding scheme through an exclusive disjunction of coefficients of a received polynomial R(D) of the first data block and previous coefficients of the quotient polynomial Q(D).
14. The method of claim 10, wherein the first data block includes one or more information bits and one or more check bits, and further comprising:
determining that the first data block includes an error when coefficients of the quotient polynomial Q(D) that correspond to the one or more information bits are non-zero; and
determining that the first data block is error-free when coefficients of the quotient polynomial Q(D) that correspond to the one or more information bits are zero.
15. The method of claim 10, where the step of decoding the first data block comprises:
decoding the first data block using a least significant bit (LSB) side scheme by beginning with a least significant term to determine whether an error occurred during transmission of the first data block.
16. A method for decoding a data packet that is received with errors, the data packet being characterized as having a plurality of data blocks, the method comprising:
decoding each of the plurality of data blocks, in parallel, in accordance with a Cyclical Redundancy Check (CRC) of a CRC encoding scheme to determine which data blocks from among the plurality of data blocks have been received with the errors;
substituting those data blocks from among the plurality of data blocks that have been received without the errors with dummy codeblocks;
receiving a newly received data packet that includes those data blocks that have been received with the errors and those code blocks that have been received without the errors being replaced with the dummy codeblocks; and
calculating a new CRC for the newly received data-packet.
17. The method of claim 16, further comprising:
repeating the steps of decoding, substituting, receiving, and calculating until all of the data blocks are replaced with the dummy codeblocks;
18. The method of claim 16, wherein the dummy codeblocks represent codeblocks containing all zeros.
19. The method of claim 16, wherein the step of calculating comprises:
calculating a new total CRC for the newly received data-packet that includes those data blocks that have been substituted with the dummy codeblocks and those code blocks that have been received with the errors.
20. The method of claim 16, wherein the step of calculating the new total CRC comprises:
evaluating:
CRC(n)=CRC(n\u22121)+CRC_delta(n)+CRC_failed(n\u22121),
where CRC(n) represents the new total CRC for the newly received data-packet, CRC(n\u22121) represents a previous transmission’s total CRC, CRC_delta(n) represents a first CRC of the newly received data packet that includes the dummy codeblocks and those code blocks that have been received with the errors, and CRC_failed(n\u22121) represents a first CRC for a previous transmission.

1. A method for fabricating ICs from a semiconductor wafer, the method comprising:
obtaining low resolution metrology data and high resolution metrology data related to a process module for performing a process on the semiconductor wafer;
modeling a process variable of the process as a function of the low resolution metrology data to generate a low-resolution process model;
modeling the process variable as a function of the high resolution metrology data to generate a high-resolution process model;
calibrating the low resolution process model;
combining the calibrated low resolution process model with the high resolution process model to generate a multi-resolution process model that models the process variable as a function of both the low resolution metrology data and the high resolution metrology data; and
analyzing a response of the multi-resolution process model and the low and high resolution metrology data to control performance of a process module.
2. The method of claim 1 wherein the obtaining comprises measuring an oxide thickness prior to and subsequent to the process.
3. The method of claim 1 wherein the process comprises a chemicalmechanical polish (\u201cCMP\u201d) process.
4. The method of claim 1 wherein the low resolution metrology data comprises wafer mean depth.
5. The method of claim 1 wherein the high resolution metrology data comprises wafer depth profile.
6. The method of claim 1 wherein the modeling the process variable as a function of the low resolution metrology data comprises modeling a polish amount as a function of polish time t.
7. The method of claim 1 wherein the modeling the process variable as a function of the high resolution metrology data comprises modeling a polish amount as a function of pressure profile P1-Pn.
8. The method of claim 1 wherein the calibrating comprises determining, for each zone n, determining a polishing time t\u2032 corresponding to zone pressure Pn.
9. A system for fabricating ICs from a semiconductor wafer, the system comprising:
means for obtaining low resolution metrology data and high resolution metrology data related to a process module for performing a process on the semiconductor wafer;
means for generating a low resolution process model of a process variable of the process;
means for generating a high resolution process model of the process variable;
means for calibrating the low resolution process model;
means for generating a multi-resolution process model from the calibrated low resolution process model and the high resolution process model for modeling the process variable as a function of both the low resolution metrology data and the high resolution metrology data; and
means for controlling performance of the process using a response of the multi-resolution process model and the low and high resolution metrology data.
10. The system of claim 9 wherein the means for obtaining comprises measuring an oxide thickness prior to and subsequent to the process.
11. The system of claim 9 wherein the process comprises a chemicalmechanical polish (\u201cCMP\u201d) process.
12. The system of claim 11 wherein the low resolution metrology data comprises wafer mean depth and the high resolution metrology data comprises wafer depth profile.
13. The system of claim 9 wherein the means for generating the low resolution process model comprises modeling a polish amount as a function of polish time t.
14. The system of claim 9 wherein the means for generating the low resolution process model comprises modeling a polish amount as a function of pressure profile P1-Pn.
15. The system of claim 9 wherein the means for calibrating comprises means for determining, on a per-zone basis, a polishing time t\u2032 corresponding to zone pressure Pn.
16. A method for implementing a multi-resolution APC in a semiconductor fabrication process, the method comprising:
obtaining pre-process high and low resolution metrology data with regard to a process using a first metrology tool;
performing the process on a semiconductor wafer using a process tool;
obtaining post-process high and low resolution metrology data with regard to the process using a second metrology tool;
modeling a process variable of the process as a function of the pre- and post-process low resolution metrology data to generate a low-resolution process model;
modeling the process variable as a function of the pre- and post-process high resolution metrology data to generate a high-resolution process model;
calibrating the low resolution process model;
combining the calibrated low resolution process model with the high resolution process model to generate a multi-resolution process model that models the process variable as a function of both the low resolution metrology data and the high resolution metrology data; and
analyzing a response of the multi-resolution process model and the post-process low and high resolution metrology data to control performance of the process using an APC controller.
17. The method of claim 16 wherein the process comprises a chemicalmechanical polish (\u201cCMP\u201d) process.
18. The method of claim 16 wherein the low resolution metrology data comprises wafer mean depth and the high resolution metrology data comprises wafer depth profile.
19. The method of claim 16 wherein the modeling the process variable as a function of the low resolution metrology data comprises modeling a polish amount as a function of polish time t and wherein the modeling a process variable as a function of the high resolution metrology data comprises modeling a polish amount as a function of pressure profile P1-Pn.
20. The method of claim 16 wherein the calibrating comprises determining, for each zone n, determining a polishing time t\u2032 corresponding to zone pressure Pn.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A photosensitive compound having a structure selected from a group consisting of the following Formula 1a and Formula 1b,
wherein, n is 0 or 1, x is 1, 2, 3, 4 or 5, y is 2, 3, 4, 5 or 6, z is 0, 1, 2, 3 or 4, R, R\u2032 and R\u2033 are independently hydrocarbon group of 1 to 30 carbon atoms, and R\u2032\u2033 is a hydrogen atom or hydrocarbon group of 1 to 30 carbon atoms;
wherein, n, x, z, R, R\u2032 R\u2033 and R\u2032\u2033 are the same defined as in Formula 1a, x\u2032 is 1, 2, 3 or 4, z\u2032 is 0, 1, 2 or 3, and p and m are independently 1 or 2,
wherein in Formula 1a and Formula 1b: i) carbonyl(C\u2550O) groups or carboxyl(\u2014COO\u2014) groups are positioned at the both ends of the R; or ii) n =1 and carbonyl(C\u2550O) groups or carboxyl(\u2014COO\u2014) groups are positioned at the both ends of R\u2032.
2. The photosensitive compound of claim 1, wherein R, R\u2032, R\u2033 and R\u2032\u2033 each is a chain type andor a ring type of aliphatic andor aromatic hydrocarbon group.
3. The photosensitive compound of claim 1, wherein the R\u2033 include an ether compound structure or an ester compound structure which includes oxygen(O) atom.
4. The photosensitive compound of claim 1, wherein the photosensitive compound is selected from a group consisting of compounds represented by the following Formulas 2b and 2d,
5. A photoresist composition comprising:
(a) 1 to 85 weight % of a photosensitive compound having a structure selected from a group consisting of the following Formula 1a and Formula 1b,
wherein, n is 0 or 1, x is 1, 2, 3, 4 or 5, y is 2, 3, 4, 5 or 6, z is 0, 1, 2, 3 or 4, R, R\u2032 and R\u2033 are independently hydrocarbon group of 1 to 30 carbon atoms, and R\u2032\u2033 is a hydrogen atom or hydrocarbon group of 1 to 30 carbon atoms;
wherein, n, x, z, R, R\u2032 R\u2032\u2033 and R\u2032\u2033 are the same defined as in Formula 1a, x\u2032 is 1, 2, 3 or 4, z\u2032 is 0, 1, 2 or 3, and p and m are independently 1 or 2;
(b) 0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and
(c) 10 to 5000 weight parts of an organic solvent with respect to 100 weight parts of the photosensitive compound,
wherein in Formula 1a and Formula 1b: i) carbonyl(C\u2550O) groups or carboxyl(\u2014COO\u2014) groups are positioned at the both ends of the R; or ii) n =1 and carbonyl(C\u2550O) groups or carboxyl(\u2014COO\u2014) groups are positioned at the both ends of R\u2032.
6. The photoresist composition of claim 5, further comprising 0.01 to 10 weight parts of a base compound with respect to 100 weight parts of the photosensitive compound, wherein, the base compound is selected from a group of consisting of tri-ethylamine, tri-iso-butylamine, tri-iso-octylamine, di-ethanolamine, tri-ethanolamine and mixture thereof.
7. A method for forming a photoresist pattern, comprising the step of:
a) coating a photoresist composition on a substrate to form a photoresist layer;
b) exposing the photoresist layer to a light;
c) heating the exposed photoresist layer; and
d) developing the heated photoresist layer to form the photoresist pattern,
wherein the photoresist composition comprises i) 1 to 85 weight % of a photosensitive compound having a structure selected from a group consisting of the following Formula 1a and Formula 1b,
wherein, n is 0 or 1, x is 1, 2, 3, 4 or 5, y is 2, 3, 4, 5 or 6, z is 0, 1, 2, 3 or 4, R, R\u2032 and R\u2033 are independently hydrocarbon group of 1 to 30 carbon atoms, and R\u2032\u2033 is a hydrogen atom or hydrocarbon group of 1 to 30 carbon atoms;
wherein, n, x, z, R, R\u2032 R\u2033 and R\u2032\u2033 are the same defined as in Formula 1a, x\u2032 is 1, 2, 3 or 4, z\u2032 is 0, 1, 2 or 3, and p and m are independently 1 or 2;
(ii) 0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and
(iii) 10 to 5000 weight parts of an organic solvent with respect to 100 weight parts of the photosensitive compound,
wherein in Formula 1a and Formula 1b: i) carbonyl(C\u2550O) groups or carboxyl(\u2014COO\u2014) groups are positioned at the both ends of the R; or ii) n=1 and carbonyl(C\u2550O) groups or carboxyl(\u2014COO\u2014) groups are positioned at the both ends of R\u2032.