Author: claimsbot

1. A top drive well drilling apparatus designed to be suspended from a travelling block in a drawworks and laterally supported by a dolly running together with the well drilling apparatus along tracks or rails attached to a derrick, said drilling apparatus comprising:
at least one driving motor, one power transmission powered by the at least one driving motor, a drive shaft driven from the power transmission and designed to be connected to a drill string, load transferring means, and a torque arresting device attached to and depending from the power transmission, wherein
a plurality of said components of the well drilling apparatus are constructed and arranged as component modules,
quick releasable connecting means detachably connect respectively adjacent individual component modules together, and
the load transferring means are in the form of a load frame module that load relieves the drive shaft and the power transmission at the same time as it forms a central component module which the other component modules are constructed around.
2. A top drive well drilling apparatus according to claim 1, wherein the load frame module carries the power transmission where the power transmission constitutes another component module which is releasable from the load frame by means of easily releasable connecting means.
3. A top drive well drilling apparatus according to claim 1, wherein the power transmission carries the at least one driving motor where each driving motor constitutes another component module which is releasable from the transmission by means of easily releasable connecting means.
4. A top drive well drilling apparatus according to claim 1, wherein the power transmission carries the torque arresting means that constitutes another component module which is releasable from the transmission by means of easily releasable connecting means.
5. A top drive well drilling apparatus according to claim 1, wherein the load frame module is in the form of a structural element omitting moving parts.
6. A top drive well drilling apparatus according to claim 1, wherein the connecting means are hydraulic operated bolts and nuts.
7. A top drive well drilling apparatus according to claim 1, wherein the connecting means are manually operated bolts and nuts.
8. A top drive well drilling apparatus according to claim 1, wherein the apparatus includes a converting module for converting signals from analogue to digital format.
9. A top drive well drilling apparatus according to claim 1, wherein the apparatus includes an elevator mechanism having an elevator for manipulation of drill pipespipe string.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An organic light emitting display device comprising:
an organic light emitting display panel that includes a plurality of power lines, a plurality of scan lines and a plurality of data lines;
a power supplier configured to apply a reference voltage to the power lines; and
a controller configured to apply at least one control signal to the power supplier,
wherein the reference voltage is gradually varied along the distance from the power supplier.
2. The organic light emitting display device of claim 1, wherein the power supplier includes:
a reference voltage generator configured to generate a basic voltage corresponding to a direct-current voltage;
an integrator configured to integrate the basic voltage and generate the reference voltage; and
a switch configured to selectively transfer the basic voltage to the integrator.
3. The organic light emitting display device of claim 2, wherein the switch is controlled by a vertical synchronous signal applied from the controller.
4. The organic light emitting display device of claim 3, wherein the switch is turned-off in a low level interval of the vertical synchronous signal.
5. The organic light emitting display device of claim 2, further comprising a switch controller controls the switch.
6. The organic light emitting display device of claim 5, wherein the switch controller is controlled by a data enable signal applied from the controller.
7. The organic light emitting display device of claim 6, wherein the switch controller includes a counter configured to count the number of pulses of the data enable signal.
8. The organic light emitting display device of claim 6, wherein the switch is turned-off at a first rising edge of the data enable signal.
9. The organic light emitting display device of claim 1, wherein the power supplier includes a DAC (digital-to-analog converter) configured to convert a reference data from the controller into a basic voltage, the reference data is a digital signal, and the basic voltage is an analog voltage.
10. The organic light emitting display device of claim 9, wherein the power supplier further includes a buffer configured to amplify the basic voltage from the DAC and provide the amplified voltage as the reference voltage.
11. The organic light emitting display device of claim 1, wherein the power supplier includes an integrator configured to integrate a pulse voltage from the controller according to time and generate the reference voltage.
12. The organic light emitting display device of claim 11, wherein the pulse voltage is output from the controller in synchronization with the data enable signal.
13. The organic light emitting display device of claim 12, wherein the pulse voltage maintains a high level during a time interval which progresses from a first rising edge to the last falling edge of the data enable signal.

1. An image sensor, comprising:
a photodiode section;
a charge storage section;
a charge transfer section;
a first control gate section provided between the photodiode section and the charge storage section to control movement of a signal charge from the photodiode section to the charge storage section; and
a second control gate section provided between the charge storage section and the charge transfer section to control movement of the signal charge from the charge storage section to the charge transfer section,
the charge storage section storing the signal charge in a PIN-ing state.
2. The sensor according to claim 1, wherein the charge storage section includes a region of a first conductivity type and an electrode covering the region with an intervention of an insulation film therebetween, and a predetermined DC bias voltage is applied to the electrode.
3. The sensor according to claim 1, wherein the charge storage section includes a first region of a first conductivity type and a second region of a second conductivity type formed in a surface portion of the first region.
4. The sensor according to claim 1, further comprising an additional charge storage region formed in contact with the photodiode section to temporarily store the signal charge, the first control gate being provided between the additional charge storage region and the charge storage section.
5. The image sensor according to claim 4, wherein each of the charge storage region and the additional charge storage region includes a region of a first conductivity type and an electrode covering the region with an intervention of an insulation film therebetween, and a predetermined DC bias voltage is applied to the electrode.
6. An image sensor, comprising:
a photodiode section;
a charge storage section;
a charge transfer section;
a first control gate section between the photodiode section and the charge storage section to control movement of a signal charge from the photodiode section to the charge storage section; and
a second control gate section provided between the charge storage section and the charge transfer section to control movement of the signal charge from the charge storage section to the charge transfer section,
the charge storage section storing the signal charge in a PIN-ing state, and
the photodiode section, the charge storage section, the charge transfer section, the first control gate section and the second control gate section are provided in a semiconductor region of a first conductivity type formed in a semiconductor body of a second conductivity type.
7. The sensor according to claim 6, wherein the semiconductor region includes a first region in which the photodiode section is formed, and a second region in which the charge storage section and the second control gate section are formed, the second region being higher in impurity concentration than the first region, and the first control gate section is formed astride the first and second regions.
8. The sensor according to claim 7, wherein each of the first and second control gate sections includes a third region of the first conductivity type that is lower in impurity concentration than the first and second regions and a gate electrode covering the third region with an intervention of an insulation film therebetween.
9. The sensor according to claim 6, wherein each of the first and second control gate sections includes a surface region of the first conductive type selectively formed in the semiconductor region with an impurity concentration lower than the semiconductor region and a gate electrode covering the surface region with an intervention of an insulation film therebetween, and a portion of the semiconductor region in which the charge storage section is formed is lower in impurity concentration that a portion of the semiconductor region in which the photodiode section is formed.
10. The sensor according to claim 6, wherein the charge storage section includes a storage gate electrode to which a DC voltage is applied, the storage gate electrode being provided over the semiconductor region with an intervention of a gate insulation film therebetween.
11. The sensor according to claim 6, wherein the charge storage section includes a surface region of the second conductive type selectively formed in a portion of the semiconductor region in which the charge storage section is formed.
12. The sensor according to claim 6, further comprising an additional charge storage section provided between the photodiode section and the first control gate section, the additional charge storage section has a gate electrode to which a DC voltage is applied, the gate electrode being provided over a portion of the semiconductor region in which the additional charge storage section is formed with an intervention of a gate insulation film therebetween.
13. The sensor according to claim 6, further comprising an additional charge storage section provided in a portion of the semiconductor region between the photodiode section and the first control gate section, the portion of the semiconductor region having a surface part that is lower in impurity concentration than a portion of the semiconductor region in which the charge storage section is formed.
14. The sensor according to claim 6, further comprising a reset section formed adjacently to the charge storage section to discharge the signal charge from the charge storage section.
15. The sensor according to claim 12, further comprising a reset section formed adjacently to the charge storage section to discharge the signal charge from the charge storage section and from the additional charge storage section.
16. The CCD image sensor according to claim 14, further comprising a reset gate resetting the signal charge of the photodiode section.
17. The CCD image sensor according to claim 14, further comprising an overflow drain for the photodiode section.
18. The CCD image sensor according to claim 15, further comprising a reset gate resetting the signal charge of the photodiode section.
19. The CCD image sensor according to claim 15, further comprising an overflow drain for the photodiode section.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An RF module comprising:
a waveguide having an area which is surrounded by a pair of ground electrodes and a conductor for making electrical connection between the pair of ground electrodes, the pair of ground electrodes being provided so as to face each other, and in which electromagnetic waves in the TE mode can propagate and a one-wavelength resonator is formed; and
a pair of output lines connected to portions corresponding to half-wavelength resonance regions of the one-wavelength resonator in one of the pair of ground electrodes.
2. The RF module according to claim 1, wherein the pair of output lines is formed so that electromagnetic waves in the TEM mode can propagate.
3. The RF module according to claim 1, comprising:
a half-wavelength resonator formed inside the waveguide and coupled to the one-wavelength resonator; and
an input line which is connected to a portion corresponding to the half-wavelength resonator in one of the pair of ground electrodes and through which electromagnetic waves in the TEM can be input as electromagnetic waves in the TE mode to the half-wavelength resonator.
4. The RF module according to claim 3, wherein the half-wavelength resonator and the one-wavelength resonator are coupled to each other via a coupling window.
5. The RF module according to claim 3, further comprising at least one another resonator which is formed between the half-wavelength resonator and the one-wavelength resonator and coupled to both of the resonators via a coupling window.
6. The RF module according to claim 3, wherein the input line is any one of a strip line, a microstrip line, and a coplanar line.
7. The RF module according to claim 1, further comprising:
another one-wavelength resonator formed inside the waveguide and coupled to the one-wavelength resonator; and
a pair of input lines which are connected to portions corresponding to half-wavelength resonance regions of the another one-wavelength resonator in one of the pair of ground electrodes and through which electromagnetic waves in the TEM mode can be input as electromagnetic waves in the TE mode to the another one-wavelength resonator.
8. The RF module according to claim 7, wherein the another one-wavelength resonator and the one-wavelength resonator are coupled to each other via a coupling window.
9. The RF module according to claim 7, further comprising at least one resonator formed between the another one-wavelength resonator and the one-wavelength resonator and coupled to both of the resonators via a coupling window.
10. The RF module according to claim 1, wherein the output line is any one of a strip line, a microstrip line, and a coplanar line.