Author: claimsbot

1. A complex compound represented by Formula 1 below:
In Formula 1, M is trivalent cobalt or trivalent chromium;
A is an oxygen or sulfur atom;
Q is a diradical that connects two nitrogen atoms;
R1 and R2 are each independently (C1-C20) primary alkyl;
R3 to R10 are each independently hydrogen; halogen; (C1-C20)alkyl; (C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C2-C20)alkenyl; (C2-C20)alkenyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkyl(C6-C20)aryl; (C1-C20)alkyl(C6-C20)aryl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C6-C20)aryl(C1-C20)alkyl; (C6-C20)aryl(C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkoxy; (C6-C30)aryloxy; formyl; (C1-C20)alkylcarbonyl; (C6-C20)arylcarbonyl; or a metalloid radical of Group 14 metal substituted with hydrocarbyl;
two of R1 to R10 may be linked with each other to form a ring;
at least three of R3 to R10 are a proton group selected from among Formula a, Formula b and Formula c as represented below:
Z is nitrogen or phosphorus;
R11, R12, R13, R21, R22, R23, R24 and R25 are each independently (C1-C20)alkyl; (C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C2-C20)alkenyl; (C2-C20)alkenyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkyl(C6-C20)aryl; (C1-C20)alkyl(C6-C20)aryl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C6-C20)aryl(C1-C20)alkyl; (C6-C20)aryl(C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; or a metalloid radical of Group 14 metal substituted with hydrocarbyl; two of R11, R12 and R13 or two of R21, R22, R23, R24 and R25 may be linked with each other to form a ring;
R31, R32 and R33 are each independently hydrogen; (C1-C20)alkyl; (C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C2-C20)alkenyl; (C2-C20)alkenyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkyl(C6-C20)aryl; (C1-C20)alkyl(C6-C20)aryl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C6-C20)aryl(C1-C20)alkyl; (C6-C20)aryl(C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; or a metalloid radical of Group 14 metal substituted with hydrocarbyl; two of R31, R32 and R33 may be linked with each other to form a ring;
X\u2032 is oxygen, sulfur or N\u2014R (wherein R is (C1-C20)alkyl);
a is a number obtained by adding 1 to the number of proton groups included in R3 to R10;
b is an integer of 1 or more; and
a nitrate or acetate anion may be coordinated to M.
2. The complex compound of claim 1, wherein Q is (C6-C30)arylene, (C1-C20)alkylene, (C2-C20)alkenylene, (C2-C20)alkynylene, or (C3-C20)cycloalkylene.
3. The complex compound of claim 2, wherein M is trivalent cobalt;
A is oxygen;
Q is trans-1,2-cyclohexylene, phenylene or ethylene;
R1 and R2 are each independently methyl or ethyl;
R3 to R10 are each independently hydrogen or \u2014YR413-m{(CR42R43)nN+R44R45R46}m;
Y is C or Si;
R41, R42, R43, R44, R45 and R46 are each independently hydrogen; (C1-C20)alkyl; (C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C2-C20)alkenyl; (C2-C20)alkenyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkyl(C6-C20)aryl; (C1-C20)alkyl(C6-C20)aryl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C6-C20)aryl(C1-C20)alkyl; (C6-C20)aryl(C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; or a metalloid radical of Group 14 metal substituted with hydrocarbyl, two of R44, R45 and R46 being linked with each other to form a ring;
m is an integer from 1 to 3, and n is an integer from 1 to 20,
in which at least three of R3 to R10 are \u2014YR413-m{(CR42R43)nN+R44R45R46}m when m is 1, at least two of R3 to R10 are \u2014YR413-m{(CR42R43)nN+R44R45R46}m when m is 2, or one or more of R3 to R10 are \u2014YR413-m{(CR42R43)nN+R44R45R46}m when m is 3.
4. The complex compound of claim 3, which is a complex compound represented by Formula 2 below:
In Formula 2, R51 and R52 are each independently methyl or ethyl;
R53 and R54 are each independently hydrogen or methyl;
Q is trans-1,2-cyclohexylene, phenylene or ethylene;
n is an integer from 1 to 20; and
a nitrate anion and an acetate anion may be coordinated to cobalt.
5. The complex compound of claim 4, wherein R51, R52, R53 and R54 are methyl, n is 3, and Q is trans-1,2-cyclohexylene.
6. A method of preparing polycarbonate, comprising copolymerizing an epoxide compound and carbon dioxide using the complex compound of claim 1 as a catalyst.
7. The method of claim 6, wherein the epoxide compound is one or more selected from the group consisting of (C2-C20)alkylene oxide substituted or unsubstituted with halogen, (C1-C20)alkyloxy, (C6-C20)aryloxy or (C6-C20)ar(C1-C20)alkyloxy; (C4-C20)cycloalkylene oxide substituted or unsubstituted with halogen, (C1-C20)alkyloxy, (C6-C20)aryloxy or (C6-C20)ar(C1-C20)alkyloxy; and (C8-C20)styrene oxide substituted or unsubstituted with halogen, (C1-C20)alkyloxy, (C6-C20)aryloxy, (C6-C20)ar(C1-C20)alkyloxy or (C1-C20)alkyl.
8. A method of preparing polycarbonate, comprising:
copolymerizing carbon dioxide and one or more epoxide compounds selected from the group consisting of (C2-C20)alkylene oxide substituted or unsubstituted with halogen, (C1-C20)alkyloxy, (C6-C20)aryloxy or (C6-C20)ar(C1-C20)alkyloxy; (C4-C20)cycloalkylene oxide substituted or unsubstituted with halogen, (C1-C20)alkyloxy, (C6-C20)aryloxy or (C6-C20)ar(C1-C20)alkyloxy; and (C8-C20)styrene oxide substituted or unsubstituted with halogen, (C1-C20)alkyloxy, (C6-C20)aryloxy, (C6-C20)ar(C1-C20)alkyloxy or (C1-C20)alkyl using a complex compound of Formula 3 below as a catalyst, thus preparing polycarbonate; and
bringing a solution in which the prepared copolymer and the catalyst are dissolved into contact with a solid inorganic material, a polymer material or a mixture thereof insoluble in the solution, thus forming a composite of solid inorganic material or polymer material and catalyst, thereby separating the copolymer and the catalyst from each other:
In Formula 3, M is trivalent cobalt or trivalent chromium;
A is oxygen or sulfur;
Q is a diradical that connects two nitrogen atoms;
R1 to R10 are each independently hydrogen; halogen; (C1-C20)alkyl; (C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C2-C20)alkenyl; (C2-C20)alkenyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkyl(C6-C20)aryl; (C1-C20)alkyl(C6-C20)aryl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C6-C20)aryl(C1-C20)alkyl; (C6-C20)aryl(C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkoxy; (C6-C30)aryloxy; formyl; (C1-C20)alkylcarbonyl; (C6-C20)arylcarbonyl; or a metalloid radical of Group 14 metal substituted with hydrocarbyl;
two of R1 to R10 may be linked with each other to form a ring;
at least one of R3 to R10 is a proton group selected from among Formula a, Formula b and Formula c as represented below:
Z is nitrogen or phosphorus;
R11, R12, R13, R21, R22, R23, R24 and R25 are each independently (C1-C20)alkyl; (C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C2-C20)alkenyl; (C2-C20)alkenyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkyl(C6-C20)aryl; (C1-C20)alkyl(C6-C20)aryl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C6-C20)aryl(C1-C20)alkyl; (C6-C20)aryl(C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; or a metalloid radical of Group 14 metal substituted with hydrocarbyl; two of R11, R12 and R13 or two of R21, R22, R23, R24and R25 may be linked with each other to form a ring;
R31, R32 and R33 are each independently hydrogen; (C1-C20)alkyl; (C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C2-C20)alkenyl; (C2-C20)alkenyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkyl(C6-C20)aryl; (C1-C20)alkyl(C6-C20)aryl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C6-C20)aryl(C1-C20)alkyl; (C6-C20)aryl(C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; or a metalloid radical of Group 14 metal substituted with hydrocarbyl; two of R31, R32 and R33 may be linked with each other to form a ring;
X\u2032 is oxygen, sulfur or N\u2014R (wherein R is (C1-C20)alkyl);
a is a number obtained by adding 1 to the number of proton groups included in R3 to R10;
b is an integer of 1 or more; and
a nitrate or acetate anion may be coordinated to M.
9. The method of claim 8, wherein the solid inorganic material is a silica or alumina which has been surface modified or not, and the solid polymer material is a polymer material having a functional group able to cause deprotonation by an alkoxy anion.
10. The method of claim 9, wherein the functional group able to cause deprotonation by an alkoxy anion is a sulfonic acid group, a carboxylic acid group, a phenol group or an alcohol group.
11. A method of separating and recovering a catalyst and a catalyst precursor from a solution in which a copolymer and the catalyst are dissolved, comprising:
copolymerizing carbon dioxide and one or more epoxide compounds selected from the group consisting of (C2-C20)alkylene oxide substituted or unsubstituted with halogen or (C1-C20)alkoxy; (C4-C20)cycloalkylene oxide substituted or unsubstituted with halogen or (C1-C20)alkoxy; and (C8-C20)styrene oxide substituted or unsubstituted with halogen, (C1-C20)alkoxy or (C1-C20)alkyl using a complex compound of Formula 3 below as a catalyst, thus preparing polycarbonate;
bringing a solution in which the prepared copolymer and the catalyst are dissolved into contact with a solid inorganic material, a polymer material or a mixture thereof insoluble in the solution, thus forming a composite of solid inorganic material or polymer material and catalyst, thereby separating the copolymer and the catalyst from each other; and
treating the composite of solid inorganic material or polymer material and catalyst with nitric acid or nitrate salt in a medium which does not dissolve the composite of solid inorganic material or polymer material and catalyst, thus dissolving out the catalyst or the catalyst precursor from the medium, thereby separating and recovering the catalyst and the catalyst precursor:
In Formula 3, M is trivalent cobalt or trivalent chromium;
A is oxygen or sulfur;
Q is a diradical that connects two nitrogen atoms;
R1 to R10 are each independently hydrogen; halogen; (C1-C20)alkyl; (C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C2-C20)alkenyl; (C2-C20)alkenyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkyl(C6-C20)aryl; (C1-C20)alkyl(C6-C20)aryl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C6-C20)aryl(C1-C20)alkyl; (C6-C20)aryl(C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkoxy; (C6-C30)aryloxy; formyl; (C1-C20)alkylcarbonyl; (C6-C20)arylcarbonyl; or a metalloid radical of Group 14 metal substituted with hydrocarbyl;
two of R1 to R10 may be linked with each other to form a ring;
at least one of R3 to R10 is a proton group selected from among Formula a, Formula b and Formula c as represented below:
Z is nitrogen or phosphorus;
R11, R12, R13, R21, R22, R23, R24 and R25 are each independently (C1-C20)alkyl; (C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C2-C20)alkenyl; (C2-C20)alkenyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkyl(C6-C20)aryl; (C1-C20)alkyl(C6-C20)aryl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C6-C20)aryl(C1-C20)alkyl; (C6-C20)aryl(C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; or a metalloid radical of Group 14 metal substituted with hydrocarbyl; two of R11, R12 and R13 or two of R21, R22, R23, R24 and R25 may be linked with each other to form a ring;
R31, R32 and R33 are each independently hydrogen; (C1-C20)alkyl; (C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C2-C20)alkenyl; (C2-C20)alkenyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkyl(C6-C20)aryl; (C1-C20)alkyl(C6-C20)aryl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C6-C20)aryl(C1-C20)alkyl; (C6-C20)aryl(C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; or a metalloid radical of Group 14 metal substituted with hydrocarbyl; two of R31, R32 and R33 may be linked with each other to form a ring;
X\u2032 is oxygen, sulfur or N\u2014R (wherein R is (C1-C20)alkyl);
a is a number obtained by adding 1 to the number of proton groups included in R3 to R10;
b is an integer of 1 or more; and
a nitrate or acetate anion may be coordinated to M.
12. A method of preparing the complex compound of Formula 1 of claim 1, comprising:
reacting a compound of Formula 4 below with silver nitrate (AgNO3) or a mixture of silver nitrate (AgNO3) and silver acetate (AgOC(O)CH3) corresponding to an equivalent of a halogen anion contained in Formula 4, thus preparing a compound of Formula 5 below; and
reacting the compound of Formula 5 with cobalt (II) acetate or chromium (II) acetate in presence of oxygen, thus preparing the complex compound of Formula 1 below:
In Formulas 1, 4 and 5, M is trivalent cobalt or trivalent chromium;
A is an oxygen or sulfur atom;
Q is a diradical that connects two nitrogen atoms;
X\u2212 is a halogen anion;
R1 and R2 are each independently (C1-C20) primary alkyl;
R3 to R10 are each independently hydrogen; halogen; (C1-C20)alkyl; (C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C2-C20)alkenyl; (C2-C20)alkenyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkyl(C6-C20)aryl; (C1-C20)alkyl(C6-C20)aryl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C6-C20)aryl(C1-C20)alkyl; (C6-C20)aryl(C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkoxy; (C6-C30)aryloxy; formyl; (C1-C20)alkylcarbonyl; (C6-C20)arylcarbonyl; or a metalloid radical of Group 14 metal substituted with hydrocarbyl;
two of R1 to R10 may be linked with each other to form a ring;
at least three of R3 to R10 are a proton group selected from among Formula a, Formula b and Formula c as represented below:
Z is nitrogen or phosphorus;
R11, R12, R13, R21, R22, R23, R24 and R25 are each independently (C1-C20)alkyl; (C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C2-C20)alkenyl; (C2-C20)alkenyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkyl(C6-C20)aryl; (C1-C20)alkyl(C6-C20)aryl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C6-C20)aryl(C1-C20)alkyl; (C6-C20)aryl(C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; or a metalloid radical of Group 14 metal substituted with hydrocarbyl; two of R11, R12 and R13 or two of R21, R22, R23, R24 and R25 may be linked with each other to form a ring;
R31, R32 and R33 are each independently hydrogen; (C1-C20)alkyl; (C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C2-C20)alkenyl; (C2-C20)alkenyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkyl(C6-C20)aryl; (C1-C20)alkyl(C6-C20)aryl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C6-C20)aryl(C1-C20)alkyl; (C6-C20)aryl(C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; or a metalloid radical of Group 14 metal substituted with hydrocarbyl; two of R31, R32 and R33 may be linked with each other to form a ring;
X\u2032 is oxygen, sulfur or N\u2014R (wherein R is (C1-C20)alkyl);
a is a number obtained by adding 1 to the number of proton groups included in R3 to R10;
b is an integer of 1 or more; and
a nitrate or acetate anion may be coordinated to M.
13. The method of claim 12, wherein M is trivalent cobalt;
A is oxygen;
Q is trans-1,2-cyclohexylene, phenylene or ethylene;
R1 and R2 are each independently methyl or ethyl;
R3 to R10 are each independently hydrogen or \u2014YR413-m{(CR42R43)nN+R44R45R46}m;
Y is C or Si;
R41, R42, R43, R44, R45 and R46 are each independently hydrogen; (C1-C20)alkyl; (C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C2-C20)alkenyl; (C2-C20)alkenyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C1-C20)alkyl(C6-C20)aryl; (C1-C20)alkyl(C6-C20)aryl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; (C6-C20)aryl(C1-C20)alkyl; (C6-C20)aryl(C1-C20)alkyl containing one or more selected from among halogen, nitrogen, oxygen, silicon, sulfur and phosphorus; or a metalloid radical of Group 14 metal substituted with hydrocarbyl, two of R44, R45 and R46 being linked with each other to form a ring;
m is an integer from 1 to 3, and n is an integer from 1 to 20,
in which at least three of R3 to R10 are \u2014YR413-m{(CR42R43)nN+R44R45R46}m when m is 1, at least two of R3 to R10 are \u2014YR413-m{(CR42R43)nN+R44R45R46}m when m is 2, or one or more of R3 to R10 are \u2014YR413-m {(CR42R43)nN+R44R45R46}m when m is 3.
14. The method of claim 13, comprising:
reacting a compound of Formula 6 below with four equivalents of silver nitrate (AgNO3), thus preparing a compound of Formula 7 below; and
reacting the compound of Formula 7 with cobalt (II) acetate in the presence of oxygen, thus preparing a compound of Formula 2 below:
In Formulas 2, 6 and 7, X\u2212 is a halogen anion,
R51 and R52 are each independently methyl or ethyl;
R53 and R54 are each independently hydrogen or methyl;
Q is trans-1,2-cyclohexylene, phenylene or ethylene;
n is an integer from 1 to 20; and
a nitrate anion and an acetate anion may be coordinated to cobalt.
15. The method of claim 14, wherein R51, R52, R53 and R54 are methyl, n is 3, and Q is trans-1,2-cyclohexylene.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An apparatus for starting an engine of a vehicle comprising:
a belt integrated starter-generator (BISG);
a starter motor; and
an electronic controller operable to use the starter motor to crank the engine if engine temperature is less than a predefined temperature limit and to otherwise use the BISG to crank the engine provided the BISG is operable to crank the engine at a speed greater than a defined rotational speed.
2. An apparatus as claimed in claim 1, wherein the predefined temperature limit falls within a range of \u221230 to +5 degrees Celsius.
3. An apparatus as claimed in claim 1, wherein the electronic controller is further operable to otherwise use the BISG to crank the engine provided a state of charge of a battery used to power the BISG is greater than a predefined level.
4. An apparatus as claimed in claim 1, wherein the electronic controller is further operable to permit automatic stopping and starting of the engine provided the engine temperature is greater than the predefined temperature limit.
5. An apparatus for starting an engine of a vehicle comprising:
a belt integrated starter-generator (BISG);
a starter motor; and
an electronic controller operable to use the starter motor to crank the engine if engine temperature is less than a predefined temperature limit and to otherwise use the BISG to crank the engine provided the BISG is operable to cause an acceleration of the engine greater than a predefined acceleration.
6. An apparatus as claimed in claim 5, wherein the predefined temperature limit falls within a range of \u221230 to +5 degrees Celsius.
7. An apparatus as claimed in claim 5, wherein the electronic controller is further operable to otherwise use the BISG to crank the engine provided a state of charge of a battery used to power the BISG is greater than a predefined level.
8. An apparatus as claimed in claim 5, wherein the electronic controller is further operable to permit automatic stopping and starting of the engine provided the engine temperature is greater than the predefined temperature limit.
9. A method of starting an engine of a vehicle comprising:
using a starter motor to crank the engine if engine temperature is less than a predefined temperature limit, and otherwise using a belt integrated starter-generator (BISG) to crank the engine provided the BISG is operable to crank the engine at a speed greater than a predefined rotational speed.
10. A method as claimed in claim 9, wherein the predefined temperature limit falls within a range of \u221230 to +5 degrees Celsius.
11. A method as claimed in claim 9 further comprising otherwise using the BISG to crank the engine provided a state of charge of a battery used to power the BISG is greater than a predefined level.
12. A method as claimed in claim 9 further comprising permitting automatic stopping and starting of the engine provided the engine temperature is greater than the predefined temperature limit.

1. An emergency medical transport vehicle, comprising:
a motorcycle having a step-through structural frame;
a platform horizontally disposed along a wheel-base, wherein said platform has a front flat surface, and two rear surfaces extending from said front flat surface on either side of a rear wheel, said rear surfaces each having sides extending vertically therefrom along the wheel-base; and
a movable seat for a driver.
2. The vehicle of claim 1, further comprising belts attached to the platform.
3. The vehicle of claim 1, wherein said seat for the driver is mounted to a seat-frame attached to rollers supported by rails on sides of the vehicle, and wherein the seat slides on said rails into a compartment at the front of the vehicle.
4. The vehicle of claim 1, wherein said seat is mounted to one end of a cantilever beam that is attached at the other end to a front section of the vehicle by means of a hinge, and wherein the seat can be flipped forward and upward by up to 90 degrees.
5. The vehicle of claim 1, wherein said seat is mounted to one end of a cantilever beam that is attached at the other end to a rear section of the vehicle by means of a hinge, and wherein the seat can be flipped backward by up to 180 degrees.
6. The vehicle of claim 1, wherein said seat is mounted to a telescoping cantilever beam that retracts into a molded recess within a rear section of the vehicle.
7. The vehicle of claim 1, wherein said seat is mounted to a seat-frame that is detachable from the vehicle.
8. The vehicle of claim 7, wherein the seat-frame is attached to the vehicle by a quick release mechanism.
9. The vehicle of claim 7, wherein said seat-frame is made of steel.
10. The vehicle of claim 7, wherein side-panels are attached to the sides of the seat-frame.
11. The vehicle of claim 10, wherein the side-panels are manufactured from plastic.
12. The vehicle of claim 7, wherein a belt is attached to the seat-frame.
13. The vehicle of claim 7, wherein a cover is removably attached to said seat-frame.
14. The vehicle of claim 12, wherein said cover for said seat-frame is manufactured from plastic, fiber glass, canvas or a synthetic fabric.
15. The vehicle of claim 1, wherein a spine-board is removably attached to the platform; said spine-board having a thickness between 1 inch to 3 inches, a width between 12 inches to 24 inches, and a length of 30 inches to 45 inches.
16. The vehicle of claim 6, further comprising a removable flexible mesh attached to the platform, said mesh having a width between 12 inches to 30 inches and a length of 30 inches to 65 inches.
17. The vehicle of claim 16, wherein said flexible mesh is manufactured from nylon.
18. The vehicle of claim 1, further comprising a locking mechanism on both sides of a front end of the step-through structural frame and a locking mechanism on both sides of a rear end of the step-through structural frame; wherein said locking mechanism secures a sling.
19. The vehicle of claim 18, wherein said sling is between 50 inches to 70 inches in length and 40 inches to 50 inches in width.
20. The vehicle of claim 18, wherein the sling is a full-body sling.
21. The vehicle of claim 18, wherein the sling is a split leg sling.
22. The vehicle of claim 1, further comprising hooks on said step-through structural frame.
23. The vehicle of claim 1, further comprising containers useful for retaining oxygen bottles on the step-through structural frame.
24. The vehicle of claim 1, comprising enclosed chambers at a rear end of the vehicle for storage of automated external defibrillator, Kendrick Extrication Device, cervical collar and other emergency medical supplies.
25. The vehicle of claim 1, further comprising a hands-free communication system.
26. The vehicle of claim 1, wherein a helmet is removably attached to the front flat surface of the platform, said helmet comprising an audio receiver and a microphone.
27. The vehicle of claim 1, wherein said motorcycle has at least three wheels.
28. The vehicle of claim 1, wherein said motorcycle is powered by electricity, solar, internal combustion engine or combinations thereof.
29. The vehicle of claim 1, further comprising an additional seat attached to the rear of said driver’s seat.
30. The vehicle of claim 1, wherein a cover is removably attached to the sides of each rear surface of the platform.
31. An emergency medical transport vehicle, comprising:
a motorcycle having a step-through structural frame;
a platform horizontally disposed along a wheel-base, wherein said platform has a front flat surface, and two rear surfaces extending from said front flat surface on either side of a rear wheel, said rear surfaces each having sides extending vertically therefrom along the wheel-base; and
a movable seat for a driver that is detachably mounted to a seat-frame.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for fabricating an MOS structure, the method comprising the steps of:
providing a semiconductor substrate;
fabricating a gate stack on the semiconductor substrate;
using the gate stack as mask, implanting impurity dopants into a semiconductor material disposed proximate to the gate stack, wherein the semiconductor material has a first surface;
etching a trench into the semiconductor material such that the semiconductor material has a trench surface within the trench;
forming a metal silicide layer on the first surface of the semiconductor material and on the trench surface; and
fabricating a contact to at least a portion of the metal silicide layer on the first surface and at least a portion of the metal silicide layer on the trench surface.
2. The method of claim 1, further comprising, before implanting impurity dopants, epitaxially growing a silicon-comprising material on the semiconductor substrate, wherein the semiconductor material comprises the epitaxially-grown silicon-comprising material, and wherein implanting impurity dopants into the semiconductor material comprises implanting the impurity dopants into the epitaxially-grown silicon-comprising material.
3. The method of claim 2, wherein implanting impurity dopants into the epitaxially-grown silicon-comprising material further comprises implanting the impurity dopants into the semiconductor substrate.
4. The method of claim 2, wherein etching the trench into the semiconductor material comprises etching the trench into the epitaxially-grown silicon-comprising material such that the trench terminates within the epitaxially-grown silicon-comprising material.
5. The method of claim 2, wherein etching the trench into the semiconductor material comprises etching the trench into the epitaxially-grown silicon-comprising material and the semiconductor substrate.
6. The method of claim 2, wherein etching the trench comprises:
depositing a dielectric material layer overlying the epitaxially-grown silicon-comprising material;
anisotropically etching the dielectric material layer to form a spacer about the gate stack; and
using the spacer as an etch mask, etching the epitaxially-grown silicon-comprising material.
7. The method of claim 1, wherein the semiconductor material is the semiconductor substrate, wherein implanting impurity dopants comprises implanting the impurity dopants into the semiconductor substrate, and wherein etching the trench into the semiconductor material comprises etching the trench into the semiconductor substrate.
8. The method of claim 1, wherein fabricating the contact comprises fabricating the contact so that sidewalls of the contact terminate at the metal silicide layer on the first surface.
9. The method of claim 1 wherein etching the trench into the semiconductor material creates two fins bounding the trench, and wherein each fin terminates at the first surface.
10. The method of claim 9 wherein the metal silicide layer is formed on the first surface on at least a portion of each fin, the method further comprising fabricating the contact to at least a portion of the metal silicide layer on the first surface of each fin.
11. A method for fabricating an MOS structure, the method comprising the steps of:
providing a semiconductor substrate;
fabricating a gate stack on the semiconductor substrate;
forming an impurity-doped region within the semiconductor substrate aligned with the gate stack;
fabricating a trench bounded by two fins by (a) epitaxially growing a layer of silicon-comprising material overlying the semiconductor substrate, wherein the silicon-comprising material defines a first surface, and by (b) etching the epitaxially-grown silicon-comprising material to form the trench between the two fins on the semiconductor substrate, wherein the trench defines a trench surface and the fins terminate at the first surface; and
forming a metal silicide layer on the trench surface and the first surface; and
fabricating a contact to at least a portion of the metal silicide layer on the first surface and at least a portion of the metal silicide layer on the trench surface.
12. The method of claim 11, wherein the silicon-comprising material is selected from the group consisting of relatively pure silicon, a silicon- and carbon-comprising material, and a silicon- and germanium-comprising material.
13. The method of claim 11 wherein forming the impurity-doped region within the semiconductor substrate aligned with the gate stack uses the gate stack as a mask and implants impurity dopants into the semiconductor material disposed proximate to the gate stack.
14. The method of claim 13, wherein the trench is fabricated before the impurity-doped region is formed, and wherein the impurity dopants are implanted into the epitaxially-grown silicon-comprising material.
15. The method of claim 14, wherein implanting impurity dopants into the epitaxially-grown silicon-comprising material further comprises implanting the impurity dopants into the semiconductor substrate.
16. The method of claim 11, wherein fabricating the trench causes the trench to terminate within the epitaxially-grown silicon-comprising material.
17. The method of claim 11, wherein fabricating the trench causes the trench to terminate within the semiconductor substrate.
18. The method of claim 11, wherein fabricating the contact comprises terminating sidewalls of the contact at the metal silicide layer on the first surface.
19. An MOS structure comprising:
a semiconductor substrate;
a gate stack formed on the semiconductor substrate;
an impurity-doped semiconductor material disposed proximate to the gate stack, wherein the impurity-doped semiconductor material has a first surface;
a trench disposed at least partially within the impurity-doped semiconductor material, wherein the impurity-doped semiconductor material has a trench surface within the trench;
a metal silicide layer disposed on the first surface and on the trench surface; and
a conductive contact extending to at least a portion of the metal silicide layer on the first surface and at least a portion of the metal silicide layer on the trench surface.
20. The MOS structure of claim 19 wherein the trench is bound by two fins formed by the impurity-doped semiconductor material disposed proximate to the gate stack, and wherein the tins terminate at the first surface.