Author: claimsbot

1. A substrate for an organic electronic device comprising:
a base substrate;
a scattering layer which is formed on the base substrate, includes a binder and scattering particles for scattering light, and has an uneven structure formed on a surface thereof opposite the base substrate; and
a planarizing layer which is formed on the scattering layer to planarize an uneven surface of the scattering layer,
wherein a refractive index Na of the scattering particles and a refractive index Nb of the planarizing layer satisfy the expression |Na\u2212Nb|\u22670.3, and the refractive index Na of the scattering particles is in a range of 2.0 to 3.5 and the refractive index Nb of the planarizing layer is in a range of 1.7 to 2.5.
2. The substrate for an organic electronic device of claim 1, wherein the scattering particles are formed on the base substrate in a single-layer structure or a stacked structure including at most 5 layers.
3. The substrate for an organic electronic device of claim 1, wherein the scattering particles have an average diameter of 0.01 \u03bcm to 20 \u03bcm.
4. The substrate for an organic electronic device of claim 1, wherein the binder in the scattering layer is an inorganic binder or an organicinorganic complex binder.
5. The substrate for an organic electronic device of claim 4, wherein the binder in the scattering layer is at least one selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, alumina, and an inorganic or organicinorganic complex based on a siloxane bond.
6. The substrate for an organic electronic device of claim 1, wherein the planarizing layer comprises an inorganic binder or an organicinorganic complex binder.
7. The substrate for an organic electronic device of claim 6, wherein the inorganic binder or the organicinorganic complex binder is at least one selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, alumina, and an inorganic or organicinorganic complex based on a siloxane bond.
8. The substrate for an organic electronic device of claim 6, wherein the planarizing layer further comprises a high-refractive index filler which is at least one selected from the group consisting of alumina, aluminum nitride, zirconium oxide, titanium oxide, cerium oxide, hafnium oxide, niobium pentoxide, tantalum pentoxide, indium oxide, tin oxide, indium tin oxide, zinc oxide, silicon, zinc sulfide, calcium carbonate, barium sulfate and silicon nitride.
9. An organic electronic device having a sequentially stacked structure comprising:
the substrate for an organic electronic device of claim 1;
a first electrode;
an organic layer which comprises a light emitting layer and an electron transfer layer doped with an alkali halide, MgF2 or CaF2, wherein the doped electron transfer layer has a thickness of 40 to 100 nm; and
a second electrode.
10. The organic electronic device of claim 9, wherein the electron transfer layer includes an electron transfer material and an alkali halide, MgF2, or CaF2 with which the electron transfer material is doped, and
the electron transfer material includes a compound containing at least one functional group selected from the group consisting of an imidazole group, an oxazole group, a thiazole group, a quinoline and a phenanthroline group.
11. The organic electronic device of claim 9, wherein the alkali halide is at least one selected from the group consisting of NaF, CsF, LiF, and KF.
12. The organic electronic device of claim 9, wherein the alkali halide, MgF2, or CaF2 has a concentration gradient, depending on the thickness of the electron transfer layer.
13. The organic electronic device of claim 9, wherein introduction and transfer of electrons are simultaneously performed at the electron transfer layer.
14. The organic electronic device of claim 9, further comprising a metal wiring formed between the first electrode and the organic layer.
15. A method of manufacturing the organic electronic device of claim 9, comprising:
forming a first electrode;
forming an organic layer including a light emitting layer on the first electrode; and
forming a second electrode on the organic layer,
wherein the forming of the organic layer includes forming an electron transfer layer doped with an alkali halide, MgF2, or CaF2 to a thickness of 40 to 100 nm.
16. The method of claim 15, wherein the forming of the organic layer includes forming at least one of a hole injection layer, a hole transfer layer, and an electron injection layer on the first electrode in addition to the electron transfer layer.
17. The organic electronic device of claim 9, wherein the doped electron transfer layer has a thickness of 55 to 85 nm.
18. A method of manufacturing the substrate for an organic electronic device of claim 1, comprising:
forming the scattering layer on the base substrate using a coating solution including the binder and the scattering particles; and

forming the planarizing layer on the formed scattering layer to have a planarized surface.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A light-emitting element, comprising:
an anode;
a cathode;
a light-emitting layer between said anode and said cathode; and
at least one of an electron injection layer and an electron transport layer interposed between the anode and the light-emitting layer,
wherein said at least one of said electron layer and said electron transport layer is made of alkali metal-including fullerenes or an organic material doped with alkali metal-including fullerene.
2. A light-emitting element as in claim 1, comprising said electron transport layer, wherein the electron transport layer is alkali metal-including fullerenes or an organic material doped with alkali metal-including fullerene.
3. A light-emitting element as in claim 1 further comprising at least one of a positive-hole injection layer and a positive-hole transport layer interposed between the anode and the light-emitting layer.
4. A light-emitting device in which a plurality of the light-emitting elements claim 3 are arranged in array or matrix state.
5. A display device comprising the light-emitting device in claim 4.
6. An illuminating device comprising the light-emitting device in claim 4.

1. A method of cementing in a subterranean formation comprising:
introducing a cement composition into a wellbore penetrating the subterranean formation,
wherein at least a portion of the subterranean formation has a temperature less than or equal to the freezing point of an aqueous liquid, and
wherein the cement composition comprises:
(A) cement;
(B) water; and
(C) a pozzolan,

wherein the cement composition has a heat of hydration of less than 50 BTU per pound; and

causing or allowing the cement composition to set in the wellbore after the step of introducing.
2. The method according to claim 1, wherein the subterranean formation is located off-shore or in a permafrost region.
3. The method according to claim 1, wherein the subterranean formation contains a gas hydrate deposit.
4. The method according to claim 3, wherein gas hydrates are present in or adjacent to, a portion of the wellbore.
5. The method according to claim 1, wherein the cement is selected from the group consisting of Portland cements, gypsum cements, high alumina content cements, slag cements, high magnesia content cements, and combinations thereof.
6. The method according to claim 1, wherein the water is selected from the group consisting of freshwater, brackish water, saltwater, and any combination thereof.
7. The method according to claim 1, wherein the pozzolan comprises the compounds silicon dioxide, aluminum oxide, and calcium oxide.
8. The method according to claim 1, wherein the pozzolan further comprises iron III oxide, and wherein the silicon dioxide, iron III oxide, aluminum oxide comprise at least 70% of the total chemical composition of the pozzolan.
9. The method according to claim 1, wherein the pozzolan is ground granulated blast furnace slag.
10. The method according to claim 1, wherein the pozzolan comprises calcium oxide and wherein the concentration of calcium oxide in the pozzolan is equal to or less than the concentration necessary for the cement composition to have a heat of hydration less than 50 BTU per pound.
11. The method according to claim 10, wherein the concentration of calcium oxide in the pozzolan is equal to or less than the concentration necessary for the cement composition to have a heat of hydration less than 40 BTU per pound.
12. The method according to claim 1, wherein the pozzolan has a calcium oxide concentration of less than 15% by weight of the pozzolan.
13. The method according to claim 1, wherein the pozzolan has a calcium oxide concentration of less than 5% by weight of the pozzolan.
14. The method according to claim 10, wherein the concentration of calcium oxide is less than or equal to the concentration necessary such that the gas hydrates are not de-stabilized.
15. The method according to claim 1, wherein the particle size of the pozzolan is selected such that a mixture consisting essentially of the cement, the water, and the pozzolan develops a compressive strength of at least 500 psi at a time of 48 hours, a temperature of 100\xb0 F., and a pressure of 3,000 psi.
16. The method according to claim 1, wherein the cement composition develops a compressive strength of at least 500 psi at a time of 48 hours, a temperature of 100\xb0 F., and a pressure of 3,000 psi.
17. The method according to claim 1, wherein the pozzolan is in a concentration of at least 30% by weight of the cement.
18. The method according to claim 1, wherein the concentration of the pozzolan is selected such that the cement composition has a heat of hydration of less than 50 BTU per pound.
19. The method according to claim 1, wherein the concentration of the pozzolan is greater than or equal to the necessary concentration such that the gas hydrates are not de-stabilized.
20. The method according to claim 1, wherein the concentration of the pozzolan is greater than or equal to the necessary concentration such that the aqueous liquid in a solid state does not melt into a liquid state.
21. A method of cementing in a subterranean formation comprising:
introducing a cement composition into a wellbore penetrating the subterranean formation,
wherein at least a portion of the subterranean formation has a temperature less than or equal to the freezing point of an aqueous liquid, and
wherein the cement composition comprises:
(A) cement;
(B) water; and
(C) a pozzolan, wherein the pozzolan has a calcium oxide concentration of less than 15% by weight of the pozzolan, and wherein the pozzolan has a concentration of at least 15% by weight of the cement,

wherein the cement composition has a heat of hydration of less than 50 BTU per pound; and

causing or allowing the cement composition to set in the wellbore after the step of introducing.
22. The method according to claim 21, wherein the pozzolan has a calcium oxide concentration of less than 5% by weight of the pozzolan.
23. The method according to claim 21, wherein the concentration of the pozzolan is greater than or equal to the necessary concentration such that the aqueous liquid in a solid state does not melt into a liquid state.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An optical element comprising:
an electromotive force-generating element that generates an electromotive force in response to electromagnetic wave; and
an optical density-changing element that changes its optical density according to the electromotive force,
the optical density-changing element comprising:
at least one of metal sulfide and metal nitride; and
a material that causes a change of the optical density and adsorbs to said at least one of metal sulfide and metal nitride.
2. The optical element according to claim 1, wherein the metal sulfide is zinc sulfide.
3. The optical element according to claim 1, wherein the metal nitride is gallium nitride.
4. The optical element according to claim 1,
wherein the optical density-changing element comprises at least one of: a metal sulfide layer containing the metal sulfide; and a metal nitride layer containing the metal nitride,
and wherein said at least one of the metal sulfide layer and the metal nitride layer has a surface roughness factor of greater than 20.
5. The optical element according to claim 1, wherein the optical density-changing element further comprises a metal oxide layer including a material that causes a change of the optical density and adsorbs to the metal oxide layer.
6. The optical element according to claim 5, wherein the metal oxide layer has a surface roughness factor of greater than 20.
7. The optical element according to claim 5, wherein metal oxide of the metal oxide layer is tin oxide.
8. The optical element according to claim 5, wherein metal oxide of the metal oxide layer is antimony-doped tin oxide.
9. The optical element according to claim 1, wherein the electromotive force-generating element and the optical density-changing element are disposed apart from each other.
10. The optical element according to claim 1, wherein the electromagnetic wave is at least one of ultraviolet ray and visible light.
11. The optical element according to claim 1, wherein the electromotive force-generating element comprises a light-receiving element including semiconductor.
12. The optical element according to claim 1, wherein the electromotive force-generating element comprises a light-receiving element including at least one of silicon, titanium oxide, zinc oxide and tin oxide.
13. The optical element according to claim 1, wherein the optical density-changing element absorbs visible light in a colored state.
14. The optical element according to claim 1, wherein the optical density-changing element absorbs a plurality of visible light rays having different wavelengths in a colored state.
15. The optical element according to claim 1, wherein the optical density-changing element absorbs blue light, green light and red light in a colored state.
16. The optical element according to claim 1, wherein the optical density-changing element has a neutral gray absorption characteristic in a colored state.
17. The optical element according to claim 1, wherein the optical density-changing element exhibits an optical density of 0.2 or less at a wavelength \u03bb of 400 nm in a decolored state.
18. The optical element according to claim 1, wherein the optical density-changing element exhibits an average optical density of 0.125 or less in a wavelength \u03bb of from 400 nm to 500 nm, an average optical density of 0.125 or less in a wavelength \u03bb of from 500 nm to 600 nm, and an average optical density of 0.125 or less in a wavelength \u03bb of from 600 nm to 700 nm, in a decolored state.
19. The optical element according to claim 1, wherein the optical density-changing element has an antireflection layer.
20. The optical element according to claim 1, wherein the optical density-changing element further comprises a compound which undergoes coloring due to at least one of oxidation and reduction.
21. The optical element according to claim 1, wherein the optical density-changing element is uniform all over a surface of the optical density-changing element.
22. The optical element according to claim 1, wherein the optical density-changing element constitutes each of a plurality of segments, said plurality of segments constituting a display element.
23. The optical element according to claim 1, wherein the optical density-changing element exhibits an optical density of 0.5 or more on the average at \u03bb of from 400 nm to 700 nm during response to radiation of the electromagnetic wave.
24. The optical element according to claim 1, wherein a response time of change of the optical density with respect to the electromagnetic wave is 5 seconds or less.
25. A camera unit comprising an optical element according to claim 1.
26. The camera unit according to claim 25, wherein the optical density-changing element is disposed on an optical axis of a lens.
27. The camera unit according to claim 26, which is a film unit with lens.