Author: claimsbot

1. A semiconductor device comprising:
a first element group connected to a first antenna;
a first substrate provided with the first element group;
a second element group connected to a second antenna; and
a second substrate which has a first region and a second region,
wherein the first antenna and the second antenna communicate with each other wirelessly,
wherein one of the first element group and the second element group comprises one selected from the group consisting of a thin film transistor and a field effect transistor,
wherein the other of the first element group and the second element group comprises a MEMS structure,
wherein the first region of the second substrate and the first substrate are directly bonded to each other without any layer interposed therebetween, and
wherein the second region is a depressed portion having a planar bottom surface.
2. A semiconductor device according to claim 1, wherein the first substrate and the second substrate are bonded to each other by anodic bonding or surface activated bonding.
3. A semiconductor device according to claim 1, wherein a surface which is opposite side of a surface on which the first element group is provided and a surface which is opposite side of a surface on which the second element group is provided face each other.
4. A semiconductor device according to claim 1, wherein the MEMS structure is one selected from the group consisting of a transducer and a microactuator.
5. A semiconductor device according to claim 1, wherein each of the first substrate and the second substrate comprises one selected from the group consisting of a single crystal silicon substrate, a silicon compound substrate, a compound semiconductor substrate, an SOI substrate, an alkali-free glass substrate, a soda glass substrate, a quartz substrate, a plastic substrate, and a metal substrate.
6. A semiconductor device comprising:
a first element group connected to a first antenna;
a first substrate provided with the first element group;
a second element group connected to a second antenna; and
a second substrate which has a first region and a second region,
wherein one of the first element group and the second element group comprises one selected from the group consisting of a thin film transistor and a field effect transistor,
wherein the other of the first element group and the second element group comprises a MEMS structure,
wherein the second element group is provided in the second region,
wherein the first antenna and the second antenna communicate with each other wirelessly,
wherein the first region of the second substrate and the first substrate are directly bonded to each other without any layer interposed therebetween,
wherein the second region is a depressed portion having a planar bottom surface, and
wherein a surface on which the first element group is provided and a surface on which the second element group is provided face each other.
7. A semiconductor device according to claim 6, wherein the first substrate and the second substrate are bonded to each other by anodic bonding or surface activated bonding.
8. A semiconductor device according to claim 6, wherein the MEMS structure is one selected from the group consisting of a transducer and a microactuator.
9. A semiconductor device according to claim 6, wherein each of the first substrate and the second substrate comprises one selected from the group consisting of a single crystal silicon substrate, a silicon compound substrate, a compound semiconductor substrate, an SOI substrate, an alkali-free glass substrate, a soda glass substrate, a quartz substrate, a plastic substrate, and a metal substrate.
10. A semiconductor device comprising:
a first element group connected to a first antenna;
a first substrate provided with the first element group;
a second element group connected to a second antenna; and
a second substrate which has a first region and a second region,
wherein one of the first element group and the second element group comprises one selected from the group consisting of a thin film transistor and a field effect transistor,
wherein the other of the first element group and the second element group comprises a MEMS structure,
wherein the second element group is provided in the second region,
wherein the first antenna and the second antenna communicate with each other wirelessly,
wherein the first region of the second substrate and the first substrate are directly bonded to each other without any layer interposed therebetween,
wherein the second region is a depressed portion having a planar bottom surface, and
wherein a surface which is opposite side of a surface on which the first element group is provided and a surface on which the second element group is provided face each other.
11. A semiconductor device according to claim 10, wherein the first substrate and the second substrate are bonded to each other by anodic bonding or surface activated bonding.
12. A semiconductor device according to claim 10, wherein the MEMS structure is one selected from the group consisting of a transducer and a microactuator.
13. A semiconductor device according to claim 10, wherein each of the first substrate and the second substrate comprises one selected from the group consisting of a single crystal silicon substrate, a silicon compound substrate, a compound semiconductor substrate, an SOI substrate, an alkali-free glass substrate, a soda glass substrate, a quartz substrate, a plastic substrate, and a metal substrate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. In combination with a railcar brake head having an end guide received within a channel or pocket of a railcar truck side frame for a sliding reciprocal movement therewithin when said brake head is installed on a railcar brake rigging, means for lubricating at least one surface of said end guide, said means comprising:
(a) at least one elongated groove provided in said at least one surface of said end guide in open communication therewith, said elongated groove having a length thereof disposed generally transverse to a direction of said sliding reciprocal movement of said end guide;
(b) a lubricating member secured within said at least one elongated groove, said lubricating member having a thickness portion thereof protruding, a predetermined height at initial installation, above said at least one surface of said end guide;
(c) whereby said predetermined height is reduced during said reciprocal movement of said end guide within said channel or pocket; and
(d) whereby material removed from said predetermined height during said reciprocal movement substantially resurfaces said at least one surface of said end guide.
2. The combination, according to claim 1, wherein said lubricating member is manufactured from a modified ultra high molecular weight polyethylene material.
3. The combination, according to claim 2, wherein said modified ultra high molecular weight polyethylene material has a molecular weight between about 3.5 and about 6.0 million.
4. The combination, according to claim 2, wherein said modified ultra high molecular weight polyethylene material has tensile yield strength of about 3,050 pounds per square inch.
5. The combination, according to claim 1, wherein said at least one elongated groove has each end thereof disposed in close proximity to and spaced from a respective longitudinal edge of said end guide.
6. An end guide for a railcar truck mounted brake rigging, said end guide comprising:
(a) a rigid body having a pair of opposed substantially flat surfaces defining thickness of said end guide, each of said pair of opposed substantially flat surfaces engaging an inner surface of a channel or pocket of a railcar truck side frame and disposed for a sliding reciprocal movement therewithin during operation of the railcar brake rigging;
(b) a pair of elongated grooves, each of said pair of elongated grooves provided in said each of said pair of opposed substantially flat surfaces of said rigid body in open communication therewith, said each elongated groove having a length thereof disposed generally transverse to said sliding reciprocal movement of said rigid body;
(c) a pair of lubricating members, each of said pair of lubricating members secured within a respective one of said pair of elongated grooves and having a thickness portion thereof protruding, a predetermined height at initial installation, above a respective one of said pair of substantially flat surfaces of said rigid body;
(d) whereby said predetermined height is reduced during said reciprocal movement of said rigid body within said channel or pocket; and
(e) whereby material removed from said predetermined height during said reciprocal movement substantially resurface said respective one of said pair of substantially flat surfaces.
7. The end guide, according to claim 6, wherein each elongated groove is disposed substantially centrally on said each of said pair of opposed substantially flat surfaces.
8. The end guide, according to claim 6, wherein each elongated groove is disposed in close proximity to diagonally opposed end of said rigid body.
9. The end guide, according to claim 1, wherein each of said pair of surfaces includes a tapered portion and wherein said each elongated groove is disposed in said tapered portion.
10. The end guide, according to claim 6, wherein said each lubricating member is manufactured from a modified ultra high molecular weight polyethylene material.
11. The end guide, according to claim 10, wherein said modified ultra high molecular weight polyethylene material has a molecular weight between about 3.5 and about 6.0 million.
12. The end guide, according to claim 10, wherein said modified ultra high molecular weight polyethylene material has tensile yield strength of about 3,050 pounds per square inch.
13. The end guide, according to claim 10, wherein said modified ultra high molecular weight polyethylene material has abrasion resistance of about 1.4 as determined by internal weight percentage method.
14. The end guide, according to claim 6, wherein said end guide is secured to or formed integral with a brake head assembly.
15. The end guide, according to claim 6, wherein said end guide is secured to or formed integral with one end of a brake beam.
16. In combination with a railcar truck having a pair of side frames and a pair of channels or pockets disposed in spaced apart relationship on an inner surface of each side frame, a brake rigging comprising:
(a) a pair of spaced apart brake beams;
(b) a linkage connecting said pair of brake beams so as to reciprocally move said pair of brake beams therebetween;
(c) plurality of brake head assemblies, each of said plurality of brake head assemblies disposed at an end of a brake beam in alignment with one wheel of said railcar truck;
(d) plurality of rigid bodies, each of said plurality of rigid bodies having a pair of opposed substantially flat surfaces, each of said pair of opposed substantially flat surfaces engaging an inner surface of a respectively positioned channel or pocket of said railcar truck and disposed for a sliding reciprocal movement therewithin during operation of said brake rigging;
(e) a plurality of elongated grooves, each of said plurality of elongated grooves provided in said each of said pair of opposed substantially flat surfaces of said each rigid body in open communication therewith, said each elongated groove having a length thereof disposed generally transverse to said sliding reciprocal movement of said each rigid body;
(f) a plurality of lubricating members, each of said plurality of lubricating members secured within a respective one of said plurality of elongated grooves and having a thickness portion thereof protruding, a predetermined height at initial installation, above a respective one of said pair of substantially flat surfaces of said each rigid body;
(g) whereby said predetermined height is reduced during said reciprocal movement of said each rigid body within said channel or pocket; and
(h) whereby material removed from said predetermined height during said reciprocal movement substantially resurfaces said respective one of said pair of substantially flat surfaces of said each rigid body.
17. The combination of claim 16, wherein said each rigid body is secured to or formed integral with said brake head assembly.
18. The combination of claim 16, wherein said each rigid body is secured to or formed integral with said one end of said brake beam.
19. The combination of claim 16, wherein said each lubricating member is secured within a respective elongated groove by a press fit method.
20. A method of lubricating at least one surface of an end guide in a railcar truck mounted brake rigging, said method comprising the steps of:
(a) providing an elongated groove within said at least one surface of said end guide in a direction substantially transverse to a direction of a reciprocal sliding movement of said end guide;
(b) securing a lubricating member within said elongated groove;
(c) extending an upper thickness portion of said lubricating member above said at least one surface of said end guide; and
(d) resurfacing said at least one surface of said end guide with said upper thickness portion of said lubricating member during said reciprocal sliding movement of said end guide.

1. A individual artificial composite log for use in vented and vent free gas log fire comprising:
a individual artificial gas log made of high temperature cement and a filler aggregate wet mix cast in a flexible mold to simulated a real log having at least one cut out in the log body where an inorganic ceramic fiber vacuum formed decorative pad which simulates the outer appearance of a real log is secured firmly inside the cut out;
a high temperature thin walled sleeve lining;
wherein a high temperature cement is used to secure the inorganic ceramic fiber vacuum formed pad to the concrete log;
wherein a high temperature thin walled sleeve lining may be installed;
wherein at least one high temperature coloring agent is used to simulate the outer and inner wood color of a real log;
wherein at least one cut out section provides at least one secondary air chamber, wherein the at least one secondary air chamber is at least 12 millimeters deep and at least 12 millimeters wide and the height of the secondary air chamber will be determined by the overall (size) diameter of the girth of the composite concrete log.
2. A individual composite concrete log as set forth in claim 1 in which the artificial concrete log is fitted with at least one inorganic ceramic fiber vacuum formed decorative pad which is secured in the main body cut out simulates an outer log surface and whereas the back surface of the inorganic ceramic fiber vacuum formed pad provides sufficient contact surface in the main body of the concrete log cut out to provide at least one vertical secondary air chamber having an open entry at the bottom of the concrete log and an open exit at the top of the concrete log.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for modulating a work function of a fully silicided gate electrode comprising:
providing a layer on a gate dielectric, the layer comprising at least one lanthanide, a semiconductor material selected from the group consisting of Si, Ge, and SiGe, and a metal, and
transforming said layer into a fully silicided gate electrode by siliciding said semiconductor material, wherein an amount of the lanthanide and an amount of the metal present in the layer are selected such that the fully silicided gate electrode thus obtained has a predetermined work function.
2. The method according to claim 1, wherein providing a layer comprises:
implanting lanthanide ions into a surface of a semiconductor material provided on a gate dielectric, said semiconductor material selected from the group consisting of Si, Ge, and SiGe, and
depositing a metal layer upon said semiconductor material.
3. The method according to claim 2, wherein said step of implanting lanthanide ions is performed after the transforming step.
4. The method according to claim 2, wherein said step of implanting lanthanide ions is performed between the step of depositing said metal and the transforming step.
5. The method according to claim 2, wherein said gate dielectric is a high-k dielectric layer.
6. The method according to claim 2, wherein said gate dielectric is a high-k dielectric layer wherein k is greater than about 3.9.
7. The method according to claim 2, wherein said lanthanide is Yb.
8. The method according to claim 2, wherein the metal is Ni.
9. The method according to claim 2, wherein siliciding said semiconductor material comprises providing a thermal budget to convert substantially all of said semiconductor material into a silicide, and removing any unreacted metal.
10. The method according to claim 2, wherein the step of transforming said layer into a fully silicided gate electrode comprises:
providing a first thermal budget to partially convert said semiconductor material into a suicide,
removing any unreacted metal, and
providing a second thermal budget for completion of the conversion of said semiconductor material into a suicide.
11. The method according to claim 1, wherein providing the layer comprises depositing a layer comprising at least one lanthanide and a metal capable of silicidation upon or over a surface of a semiconductor material provided on a gate dielectric.
12. The method according to claim 11, wherein depositing said metal and said lanthanide comprises alternately depositing at least one layer of metal and at least one layer of lanthanide.
13. The method according to claim 12, wherein a last layer deposited in said alternating sequence is a metal layer.
14. The method according to claim 12, wherein said metal layer and said lanthanide layer arc deposited using sputtering.
15. The method according to claim 11, wherein said metal and said lanthanide are co-deposited.
16. The method according to claim 15, wherein said metal and said lanthanide are simultaneously sputtered.
17. The method according to claim 11 further comprising forming a capping layer over said deposited metal and said deposited lanthanide before the step of transforming said layer into a fully silicided gate electrode.
18. The method according to claim 11, further comprising selectively removing unreacted metal and unreacted lanthanide after forming the fully silicided gate electrode.
19. The method according to claim 11, wherein said gate dielectric is a high-k dielectric layer.
20. The method according to claim 11, wherein said gate dielectric is a high-k dielectric layer wherein K is greater than about 3.9.
21. The method according to claim 11, wherein said at least one lanthanide is Yb.
22. The method according to claim 11, wherein said metal is Ni.
23. The method according to claim 1, wherein the filly silicided gated electrode forms part of a nMOSFET device, and wherein the predetermined work function is smaller than about 4.5 eV.
24. The method according to claim 1, wherein the filly silicided gated electrode forms part of a nMOSFET device, and wherein the predetermined work function is from about 3.9 eV to about 4.5 eV.
25. The method according to claim 1, wherein the fully silicided gated electrode forms part of a nMOSFET device, and wherein the predetermined work function is from about 4 eV to about 4.2 eV.
26. The method according to claim 1, wherein the fully silicided gated electrode is an alloy of formula NixYbySi1-x-y wherein 0.3<x<0.7 and 0.005<y<0.2.
27. The method according to claim 26, wherein x=0.55 and y=0.12.
28. The method according to claim 2, wherein the filly silicided gate electrode comprises part of a NiYbSi FUSI gate.