Author: claimsbot

1. A honeycomb structure comprising a plurality of honeycomb segments having porous partition walls separating and forming a plurality of cells functioning as fluid passages and an outer peripheral wall located in the outermost periphery, the cells including first cells each open in an end portion on one side and plugged in the other end portion on the other side and second cells each plugged in the end portion on the one side and open in the other end portion on the other side, and the first cells and the second cells being alternately disposed with the first cells having an area larger than that of the second cells in a cross section perpendicular to the central axial direction;
wherein the outer peripheral wall has protruding portions along an external shape of the first cells and depressed portions along an external shape of the second cells,
the honeycomb segments are disposed with side faces thereof facing each other and bonded to each other with a bonding member at the side faces facing each other, and
a distance between the depressed portions on adjacent side faces that are bonded to each other is equal to two times a height of the protruding portions plus a distance between the protruding portions of the adjacent side faces.
2. The honeycomb structure according to claim 1, wherein the protruding portions of the outer peripheral wall has a height of 0.1 to 1.0 mm based on the depressed portions of the outer peripheral wall.
3. The honeycomb structure according to claim 1, wherein, in a pair of side faces facing each other of adjacent honeycomb segments, the distance from the depressed portion of one of the side faces to the depressed portion of the other side face is 0.3 to 3.0 mm.
4. The honeycomb structure according to claim 2, wherein, in a pair of side faces facing each other of adjacent honeycomb segments, the distance from the depressed portion of one of the side faces to the depressed portion of the other side face is 0.3 to 3.0 mm.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A design data creating method of creating design data of a semiconductor device, comprising:
extracting an AND region of an upper layer wiring pattern and a lower layer wiring pattern that sandwich a contact hole layer pattern included in a pattern layer;
extracting the contact hole layer pattern included in the AND region; and
moving, by a computer, the contact hole layer pattern in such a manner that a center of the AND region coincides with a center of the contact hole layer pattern.
2. The method according to claim 1, wherein the AND region is extracted after increasing widths of the upper layer wiring pattern and the lower layer wiring pattern that sandwich the contact hole layer pattern included in the pattern layer.
3. The method according to claim 1, wherein the AND region is extracted by using a Boolean operation.
4. The method according to claim 1, wherein at least one of the upper layer wiring pattern and the lower layer wiring pattern is a metal wiring pattern.
5. A design data creating method of creating design data of a semiconductor device, comprising:
extracting an AND region of an upper layer wiring pattern and a lower layer wiring pattern that sandwich a contact hole layer pattern included in a pattern layout;
extracting the contact hole layer pattern included in the AND region; and
moving, by a computer, the contact hole layer pattern in such a manner that the contact hole layer pattern approximates a center of the AND region on a maximum level to satisfy predetermined design restrictions.
6. The method according to claim 5, wherein the AND region is extracted after increasing widths of the upper layer wiring pattern and the lower layer wiring pattern that sandwich the contact hole layer pattern included in the pattern layer.
7. The method according to claim 5, wherein the AND region is extracted by using a Boolean operation.
8. The method according to claim 5, wherein at least one of the upper layer wiring pattern and the lower layer wiring pattern is a metal wiring pattern.
9. A design data creating method of creating design data of a semiconductor device, comprising:
simulating a pattern shape of each of an upper layer wiring pattern and a lower layer wiring pattern that sandwich a contact hole layer pattern included in a pattern layout under a plurality of process conditions considering a predetermined process error;
determining a process condition under which a contact area of the upper layer wiring pattern, the lower layer wiring pattern, and the contact hole layer pattern becomes minimum from the plurality of process conditions based on a result of the simulation;
extracting an AND region of a simulated shape of the upper layer wiring pattern and a simulated shape of the lower layer wiring pattern under the determined process condition;
obtaining a gravity point of the AND region; and
moving, by a computer, the contact hole layer pattern in such a manner that the gravity point of the AND region coincides with a center of the contact hole layer pattern.
10. The method according to claim 9, further comprising:
increasing widths of the upper layer wiring pattern and the lower layer wiring pattern that sandwich the contact hole layer pattern included in the pattern layer, thereafter performing an optical proximity effect correction with respect to the processed pattern, thereby determining a pattern shape to perform the simulation.
11. The method according to claim 9, wherein the AND region is extracted by using a Boolean operation.
12. The method according to claim 9, wherein at least one of the upper layer wiring pattern and the lower layer wiring pattern is a metal wiring pattern.
13. A computer storage medium comprising a program that, when executed by a computer, causes the computer to execute:
extracting an AND region of an upper layer wiring pattern and a lower layer wiring pattern that sandwich a contact hole layer pattern included in a pattern layout of a semiconductor device;
extracting the contact hole layer pattern included in the AND region; and
moving the contact hole layer pattern in such a manner that a center of the AND region coincides with a center of the contact hole layer pattern, thereby creating design data of the semiconductor device.
14. A computer storage medium comprising a program that, when executed by a computer, causes the computer to execute:
extracting an AND region of an upper layer wiring pattern and a lower layer wiring pattern that sandwich a contact hole layer pattern included in a pattern layout;
extracting the contact hole layer pattern included in the AND region; and
moving the contact hole layer pattern in such a manner that the contact hole layer pattern approximates a center of the AND region on a maximum level to satisfy predetermined design restrictions.
15. A computer storage medium comprising a program that, when executed by a computer, causes the computer to execute:
simulating a pattern shape of each of an upper layer wiring pattern and a lower layer wiring pattern that sandwich a contact hole layer pattern included in a pattern layout under a plurality of process conditions considering a predetermined process error;
determining a process condition under which a contact area of the upper layer wiring pattern, the lower layer wiring pattern, and the contact hole layer pattern becomes minimum from the plurality of process conditions based on a result of the simulation;
extracting an AND region of a simulated shape of the upper layer wiring pattern and a simulated shape of the lower layer wiring pattern under the determined process condition;
obtaining a gravity point of the AND region; and
moving the contact hole layer pattern in such a manner that the gravity point of the AND region coincides with a center of the contact hole layer pattern.
16. A manufacturing method of a semiconductor device for forming a pattern on a semiconductor substrate by using a photomask, the photomask being manufactured by using design data of the semiconductor device created by:
extracting an AND region of an upper layer wiring pattern and a lower layer wiring pattern that sandwich a contact hole layer pattern included in a pattern layout;
extracting the contact hole layer pattern included in the AND region; and
moving, by a computer, the contact hole layer pattern in such a manner that a center of the AND region coincides with a center of the contact hole layer pattern.
17. A manufacturing method of a semiconductor device for forming a pattern on a semiconductor substrate by using a photomask, the photomask being manufactured by using design data of the semiconductor device created by:
extracting an AND region of an upper wiring pattern and a lower wiring pattern that sandwich a contact hole layer pattern included in a pattern layout;
extracting the contact hole layer pattern included in the AND region; and
moving, by a computer, the contact hole layer pattern in such a manner that the contact hole layer pattern approximates a center of the AND region on a maximum level to satisfy predetermined design restrictions.
18. A manufacturing method of a semiconductor device for forming a pattern on a semiconductor substrate by using a photomask, the photomask being manufactured by using design data of the semiconductor device created by:
simulating a pattern shape of each of an upper wiring pattern and a lower wiring pattern that sandwich a contact hole layer pattern included in a pattern layout under a plurality of process conditions considering a predetermined process error;
determining a process condition under which a contact area of the upper wiring pattern, the lower wiring pattern, and the contact hole layer pattern becomes minimum from the plurality of process conditions based on a result of the simulation;
extracting an AND region of a simulated shape of the upper wiring pattern and a simulated shape of the lower wiring pattern under the determined process condition;
obtaining a gravity point of the AND region; and
moving, by a computer, the contact hole layer pattern in such a manner that the gravity point of the AND region coincides with a center of the contact hole layer pattern.

What is claimed is:

1. An oxidation resistant carbonaceous material which is a carbonaceous material coated with an oxidation resistant protective layer of silicon carbide practically insusceptible to oxidation even at a high temperature of 800 C. or higher
2. An oxidation resistant carbonaceous material as claimed in claim 1, wherein said carbonaceous material is selected from the group consisting of a CC composite, a SiSiC type composite material, and a SiC type composite material.
3. An oxidation resistant carbonaceous material as claimed in claim 1, wherein the oxidation resistant carbonaceous material is a formed product.
4. A method for producing an oxidation resistant carbonaceous material whose surface is coated with an oxidation resistant protective layer of silicon carbide practically insusceptible to oxidation even if the material is exposed for a long duration to a high temperature of 800 C. or higher in the presence of the atmospheric air, comprising applying a coating agent containing metallic silicon and a phenol resin to at least a part of the surface of a carbonaceous material, carbonizing the phenol resin by prefiring the coating agent at 1000 C. or lower in an inert atmosphere, heating the material to 1420 to 2200 C. in the same atmosphere, and reacting the practically total amount of the metallic silicon with carbon in the same temperature range to form the oxidation resistant protective layer of silicon carbide.
5. A method for producing an oxidation resistant carbonaceous material as claimed in claim 4, wherein the thickness of the applied coating agent is 50 to 500 m.
6. A method for producing an oxidation resistant carbonaceous material as claimed in claim 4, wherein the carbonaceous material is selected from the group consisting of a CC composite, a SiSiC type composite material, and a SiC type composite material.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of aligning a dental implant based upon the position and depth of the natural tooth socket at the time of tooth extraction, said method comprising:
extracting a tooth from the jaw of a human patient having a plurality of other teeth, thus producing an empty tooth socket in said jaw;
obtaining a post with length and width dimensions capable of penetrating substantially to the bottom of said empty tooth socket, said post having a plurality of X-ray visible markers positioned along the length of said post, thus enabling the depth of said post in said tooth socket to be determined by dental X-ray images;
positioning said post in said empty tooth socket;
obtaining a guideblock with an outer surface and at least one hole, said at least one hole having dimensions capable of fitting over at least a portion of said post;
stabilizing said post by slipping one of said at least one hole of said guideblock over said post;
stabilizing the position of said guideblock, relative to the position of at least some of said plurality of other teeth that are adjacent to said empty tooth socket, by constructing a guide that contacts at least some of the outer surface of said guideblock and the outer surface of at least some of said plurality of other teeth using a rapid setting or thermoplastic guide material, so that when said guide material has hardened, the position of at least some of said plurality of other teeth and said guide act to hold said guideblock into a fixed position;
removing said post from said empty tooth socket and said guideblock; and
using at least one hole in said guideblock_to subsequently position a drilling procedure to install and align a dental implant.
2. The method of claim 1, wherein said guideblock is substantially cylindrical, and wherein at least the cylindrical outer side of said guideblock is knurled or otherwise textured so as to create a more secure connection with said guide material.
3. The method of claim 2, wherein the height of said guideblock is between 5 mm and 9 mm, and the outer diameter of said guideblock is between 3 mm and 6 mm.
4. The method of claim 2, wherein said at least one holes are substantially cylindrical, and wherein the inner diameter of said at least one holes are between 2 mm and 6 mm.
5. The method of claim 2, further positioning the cylindrical portion of an approximately cylindrical flanged drill reduction guidance sleeve inside said at least one hole of said guideblock, the outer diameter of said cylindrical portion of said drill reduction guidance sleeve being configured to fit snugly but reversibly inside the diameter of said at least one hole, and the outer diameter of said flange being configured so that said flange is substantially the same diameter of said guideblock.
6. The method of claim 2, wherein the position of a drill used to perform said drilling procedure is further stabilized by use of a tool that contains a plurality of drill reduction guides positioned on a handle, said drill reduction guides configured to fit in said at least one hole of said guideblock, and further constrain the diameter of said at least one hole to approximately the diameter of a drill bit for an implant of choice, thereby facilitating rapid selection among different implant drill bit sizes and different implant diameters.
7. The method of claim 1, wherein said post has a shape substantially similar to that of a larger cylinder, with a smaller diameter cylindrical tip attached along the axis of rotation of said larger cylinder;
and wherein the diameter of said larger cylinder is between 2 mm and 4 mm, and the diameter of said smaller diameter cylindrical tip is between 1 mm and 2 mm.
8. The method of claim 7, wherein said post is made from a radio-opaque material, and said X-ray visible markers comprise a plurality of grooves in said post with a spacing of approximately 2 to 4 mm between said grooves.
9. The method of claim 7, wherein at least the tip of said post is bendable, wherein at least said tip of said post is bent in order to better fit the natural curvature of said empty tooth socket.
10. The method of claim 1, wherein the position of said post in said tooth socket or guideblock is further stabilized by at least one O-ring.
11. The method of claim 1, further using information on the depth of said post in said tooth socket, as obtained from dental X-ray images showing said plurality of X-ray visible markers positioned along said post, to determine the depth of said drilling procedure.
12. The method of claim 1, wherein after said guide is constructed, further filling said empty socket with bone grafting material or synthetic bone material, and allowing said empty socket to heal prior to using said guideblock to subsequently position a drilling procedure for a dental implant.
13. The method of claim 1, wherein said post is used on a molar or other tooth with more than one root, and interradicular bone between said more than one root;
wherein said guideblock has at least two holes;
wherein said post is placed in one guideblock hole in the position corresponding to one root of said molar or other tooth, and a different guideblock hole is used to position a drilling procedure for a dental implant into the interradicular bone between the roots of said molar or other tooth.
14. A kit for constructing a guide to align a dental implant based upon the position and depth of a natural tooth socket at the time of tooth extraction, said kit comprising:
at least one post with length and width dimensions capable of penetrating substantially to the bottom of an empty tooth socket, said post having a plurality of X-ray visible markers positioned along the length of said post;
a guideblock with an outer surface and at least one hole, said at least one hole having dimensions capable of fitting over at least a portion of said post; and
at least one O-ring configured to slip over said at least one post.
15. The kit of claim 14, in which said guideblock is substantially cylindrical, and in which said guideblock has a cylindrical outer surface which is knurled or otherwise textured so as to create a more secure connection with said guide material;
the height of said guideblock is between 5 mm and 9 mm, and the outer diameter of said guideblock is between 3 mm and 6 mm; and
wherein said at least one holes are substantially cylindrical, and wherein the inner diameter of said at least one holes are between 2 mm and 6 mm.
16. The kit of claim 14, wherein said post has a shape substantially similar to that of a larger cylinder, with a smaller diameter cylindrical tip along the axis of rotation of said larger cylinder;
the diameter of said larger cylinder is between 2 mm and 4 mm;
the diameter of smaller diameter cylindrical tip is between 1 mm and 2 mm;
said post further comprises a radio-opaque material;
said X-ray visible markers comprise plurality of grooves in said post with a spacing of approximately 2 to 4 mm between said grooves; and
at least the smaller diameter cylindrical tip of said post is bendable, wherein at least said tip of said post is bent in order to better fit the natural curvature of an empty tooth socket.
17. The kit of claim 14, further comprising at least one drill reduction guidance sleeve;
said drill reduction guidance sleeve comprising a first hollow cylinder, with a central hole extending through the axis of rotation of said cylinder;
one end of said hollow cylinder extending outward to form a larger radius flange;
the outer diameter of said cylindrical portion being configured to fit snugly but reversibly inside the diameter of said at least one hole in said guideblock;
and the outer diameter of said flange being configured so that said flange is substantially the same diameter as the outer diameter of said guideblock;
wherein said drill reduction guidance sleeve acts, during a drilling operation, to effectively reduce the diameter of said at least one hole in said guideblock to approximately the diameter of a drill bit for an implant of choice, thereby more precisely positioning the drill bit.
18. The kit of claim 14, further comprising a rapid setting or thermoplastic guide material, andor instructions for how to use said kit to construct said guide.
19. The kit of claim 14, further comprising a tool that contains a plurality of drill reduction guides positioned on a handle, said drill reduction guides configured to fit in said at least one hole of said guideblock, and further constrain the diameter of said at least one hole to approximately the diameter of a drill for an implant of choice, thereby facilitating rapid selection among different implant drill sizes and different implant diameters.